2n7002

2N7002Z Datasheet (PDF)

1.1. 2n7002zt.pdf Size:159K _utc

UNISONIC TECHNOLOGIES CO., LTD
2N7002ZT Power MOSFET
300mA, 60V DUAL N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC 2N7002ZT uses advanced technology to provide
excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* Low Reverse Transfer Capacitance (CRSS =

1.2. 2n7002zdw.pdf Size:171K _utc

UNISONIC TECHNOLOGIES CO., LTD
2N7002ZDW Power MOSFET
300mA, 60V DUAL N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC 2N7002ZDW uses advanced technology to provide
excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* Low Reverse Transfer Capacitance (CRSS

 1.3. 2n7002z.pdf Size:178K _utc

UNISONIC TECHNOLOGIES CO., LTD
2N7002Z
Power MOSFET
300mA, 60V N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
DESCRIPTION
The UTC 2N7002Z uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON)

2N7002BK Datasheet (PDF)

1.1. 2n7002bkmb.pdf Size:661K _update-mosfet

2N7002BKMB
60 V, single N-channel Trench MOSFET
Rev. 2 — 13 June 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching  Logic-level compa

1.2. t2n7002bk.pdf Size:212K _update_mosfet

T2N7002BK
MOSFETs Silicon N-Channel MOS
T2N7002BK
T2N7002BK
T2N7002BK
T2N7002BK
1. Applications
1. Applications
1. Applications
1. Applications
• High-Speed Switching
2. Features
2. Features
2. Features
2. Features
(1) ESD(HBM) level 2 kV
(2) Low drain-source on-resistance
: RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5 V)
RDS(ON) = 1.2 Ω (

 1.3. 2n7002bkt.pdf Size:334K _philips

2N7002BKT
60 V, 290 mA N-channel Trench MOSFET
Rev. 1 15 June 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology

H2N7002 Datasheet (PDF)

1.1. h2n7002k.pdf Size:136K _hsmc

Spec. No. : MOS200803
HI-SINCERITY
Issued Date : 2005.03.13
Revised Date :2010,03,04
MICROELECTRONICS CORP.
Page No. : 1/5
H2N7002K
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
ESD protected
Absolute Maximum Ratings
Drain-Source Voltage ……………………………………………………………………………………………

1.2. h2n7002ksn.pdf Size:156K _hsmc

Spec. No. : MOS200809
HI-SINCERITY
Issued Date : 2008.11.18
Revised Date :2010.04.14
MICROELECTRONICS CORP.
Page No. : 1/4
H2N7002KSN Pin Assignment & Symbol
3
3-Lead Plastic SOT-323
H2N7002KSN
Package Code: SN
Pin 1: Gate 2: Source 3: Drain
N-CHANNEL TRANSISTOR 2
1
Description
N-channel enhancement-mode MOS transistor.
ESD protected
Absolute Maximum Ratings
Drai

 1.3. h2n7002sn.pdf Size:114K _hsmc

Spec. No. : MOS200605
HI-SINCERITY
Issued Date : 2006.02.01
Revised Date : 2006.02.07
MICROELECTRONICS CORP.
Page No. : 1/5
H2N7002SN Pin Assignment & Symbol
H2N7002SN
3
3-Lead Plastic SOT-323
Package Code: SN
N-Channel MOSFET (60V, 0.2A)
Pin 1: Gate 2: Source 3: Drain
2
1
D
Description
G
N-channel enhancement-mode MOS transistor.
S
Absolute Maximum Ratings
Drain-Source Vol

1.4. h2n7002.pdf Size:129K _hsmc

Spec. No. : MOS200503
HI-SINCERITY
Issued Date : 2005.04.01
Revised Date : 2009.10.09
MICROELECTRONICS CORP.
Page No. : 1/5
H2N7002
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
SOT-23
Absolute Maximum Ratings
Drain-Source Voltage ………………………………………………………………………………………………….

2N7002KW Datasheet (PDF)

1.1. 2n7002kw.pdf Size:286K _fairchild_semi

May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101
D
S
SOT-323
G
Marking : 7KW
Ab

1.2. s2n7002kw.pdf Size:536K _secos

S2N7002KW
115mA, 60V
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURES
Low on-resistance
Fast switching Speed
A
L
Low-voltage drive
3
3
Easily designed drive circuits Top View C B
1
1 2
ESD protected:1500V
2
K E
D
H J
F G
Millimeter Millimeter
REF. REF.
Min

 1.3. 2n7002kw.pdf Size:527K _secos

2N7002KW
115mA , 60V, RDS(ON) 4 ?
N-Ch Small Signal MOSFET with ESD Protection
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-323
? RDS(ON), VGS@10V, IDS@500mA=3?
? RDS(ON), VGS@4.5V, IDS@200mA=4?
A
? Advanced Trench Process Technology
L
? High Density Cell Design For Ultra Low On-Resistance
3
3
? Very Lo

2N7002A Datasheet (PDF)

1.1. cmt2n7002ag.pdf Size:199K _update_mosfet

CMT2N7002AG
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION FEATURES
This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON)
is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch
These products have been designed to minimize Rugged and Reliable
on-state resistance while provide rugged, reliable, and High

1.2. t2n7002ak.pdf Size:591K _update_mosfet

T2N7002AK
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
T2N7002AK
○ High Speed Switching Applications
• ESD protected gate
• Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V)
RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V)
RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
1. Gate
2. Source
Drai

 1.3. 2n7002a.pdf Size:147K _diodes

2N7002A
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Features Mechanical Data
• N-Channel MOSFET • Case: SOT-23
• Low On-Resistance • Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Low Gate Threshold Voltage
• Moisture Sensitivity: Level 1 per J-STD-020D
• Low Input Ca

1.4. 2n7002a.pdf Size:51K _kec

2N7002A
SEMICONDUCTOR
N CHANNEL ENHANCEMENT MODE
TECHNICAL DATA
FIELD EFFECT TRANSISTOR
INTERFACE AND SWITCHING APPLICATION.
FEATURES
E
L B L
High density cell design for low RDS(ON).
DIM MILLIMETERS
Voltage controolled small signal switch.
_
A +
2.93 0.20
B 1.30+0.20/-0.15
Rugged and reliable.
C 1.30 MAX
2
3
High saturation current capablity.
D 0.45+0.15/-0.05
E 2.40+0.3

 1.5. cmt2n7002ag.pdf Size:199K _champion

CMT2N7002AG
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION FEATURES
This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON)
is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch
These products have been designed to minimize Rugged and Reliable
on-state resistance while provide rugged, reliable, and High

SN7002N Datasheet (PDF)

1.1. sn7002n.pdf Size:299K _update_mosfet

SN7002N
SIPMOS Small-Signal-Transistor
Product Summary
Feature
VDS 60 V
• N-Channel
RDS(on) 5 Ω
• Enhancement mode
ID 0.2 A
• Logic Level
PG-SOT-23
• dv/dt rated
Drain
pin 3
• Qualified according to AEC Q101
Gate
pin1
Source
pin 2
Type Package Pb-free Tape and Reel Information Marking
PG-SOT-23
SN7002N Yes L6327: 3000 pcs/reel sSN
Yes
SN7002N PG-SOT-23 L6433:

1.2. sn7002n.pdf Size:299K _infineon

SN7002N
SIPMOS Small-Signal-Transistor
Product Summary
Feature
VDS 60 V
• N-Channel
RDS(on) 5 Ω
• Enhancement mode
ID 0.2 A
• Logic Level
PG-SOT-23
• dv/dt rated
Drain
pin 3
• Qualified according to AEC Q101
Gate
pin1
Source
pin 2
Type Package Pb-free Tape and Reel Information Marking
PG-SOT-23
SN7002N Yes L6327: 3000 pcs/reel sSN
Yes
SN7002N PG-SOT-23 L6433:

 4.1. sn7002w.pdf Size:312K _update_mosfet

SN7002W
SIPMOS Small-Signal-Transistor
Product Summary
Feature
VDS 60 V
• N-Channel
RDS(on) 5 Ω
• Enhancement mode
ID 0.23 A
• Logic Level
PG-SOT-323
• dv/dt rated
Drain
pin 3
Gate
• Qualified according to AEC Q101
pin1
Source
• Halogen-free according to IEC61249-2-21
pin 2
Type Package Pb-free Tape and Reel Information Marking
PG-SOT-323 Yes
SN7002W H6327: 3

4.2. sn7002.pdf Size:89K _infineon

SN 7002
SIPMOS Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8…2.0V
Pin 1 Pin 2 Pin 3
G S D
Type VDS ID RDS(on) Package Marking
SN 7002 60 V 0.19 A 5 Ω SOT-23 sSG
Type Ordering Code Tape and Reel Information
SN 7002 Q67000-S063 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS 60 V
V
Drain-gate voltage

 4.3. sn7002w.pdf Size:312K _infineon

SN7002W
SIPMOS Small-Signal-Transistor
Product Summary
Feature
VDS 60 V
• N-Channel
RDS(on) 5 Ω
• Enhancement mode
ID 0.23 A
• Logic Level
PG-SOT-323
• dv/dt rated
Drain
pin 3
Gate
• Qualified according to AEC Q101
pin1
Source
• Halogen-free according to IEC61249-2-21
pin 2
Type Package Pb-free Tape and Reel Information Marking
PG-SOT-323 Yes
SN7002W H6327: 3

2N7002BKS Datasheet (PDF)

2.1. 2n7002bkmb.pdf Size:661K _update-mosfet

2N7002BKMB
60 V, single N-channel Trench MOSFET
Rev. 2 — 13 June 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching  Logic-level compa

2.2. t2n7002bk.pdf Size:212K _update_mosfet

T2N7002BK
MOSFETs Silicon N-Channel MOS
T2N7002BK
T2N7002BK
T2N7002BK
T2N7002BK
1. Applications
1. Applications
1. Applications
1. Applications
• High-Speed Switching
2. Features
2. Features
2. Features
2. Features
(1) ESD(HBM) level 2 kV
(2) Low drain-source on-resistance
: RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5 V)
RDS(ON) = 1.2 Ω (

 2.3. 2n7002bkt.pdf Size:334K _philips

2N7002BKT
60 V, 290 mA N-channel Trench MOSFET
Rev. 1 15 June 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology

2N7002DW MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N7002DW

Маркировка: K72

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.2
W

Предельно допустимое напряжение сток-исток (Uds): 60
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Максимально допустимый постоянный ток стока (Id): 0.115
A

Максимальная температура канала (Tj): 150
°C

Сопротивление сток-исток открытого транзистора (Rds): 7.5
Ohm

Тип корпуса: SC70

2N7002DW
Datasheet (PDF)

1.1. am2n7002dw.pdf Size:454K _upd-mosfet

AiT Semiconductor Inc. AM2N7002DW
www.ait-ic.com N-CHANNEL MOSFET
SMALL SIGNAL MOSFET 115mA, 60 VOLTS
DESCRIPTION FEATURES
Available in SOT-363 package.  ESD Protected: 1000V
 Available in SOT-363 package
ORDERING INFORMATION N CHANNEL MOSFET
Package Type Part Number
SOT-363 AM2N7002DWC6R
C6
(SC70-6) AM2N7002DWC6VR
V: Halogen free Package
Note R: Tape & Reel
SPQ:

1.2. l2n7002dw1t1g.pdf Size:296K _update_mosfet

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps,60 Volts
L2N7002DW1T1G
N–Channel SC-88
• Pb-Free Package is Available.
• ESD Protected:1000V
MAXIMUM RATINGS
Rating Symbol Value Unit
3 2 1
Drain-Source Voltage VDSS 60 Vdc
D2 G1 S1
Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc
Drain Current ID ±115 mAdc
ID ±75
— Continuous TC = 25°C (Note 1)
IDM ±800
— Continuo

 1.3. 2n7002dw.pdf Size:257K _fairchild_semi

October 2007
2N7002DW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
SC70-6 (SOT363)
1
1
Marking : 2N
Absolute Maximum Ratings * Ta = 25°C un

1.4. 2n7002dw.pdf Size:84K _diodes

2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features Mechanical Data
• Dual N-Channel MOSFET • Case: SOT-363
• Low On-Resistance • Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Low Gate Threshold Voltage
• Moisture Sensitivity: Level 1 per J-STD-020
• Low Input Capacitance
• Termina

 1.5. 2n7002dw.pdf Size:285K _utc

UNISONIC TECHNOLOGIES CO., LTD
2N7002DW Power MOSFET
300mA, 60V DUAL
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N7002DW uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* High Density Cell Design for Low R .
DS(ON)
* Voltage Contr

1.6. s2n7002dw.pdf Size:247K _secos

S2N7002DW
115mA, 60V
Dual N-Channel MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
SOT-363
MECHANICAL DATA
? Case: SOT-363,Molded Plastic.
? Case Material-UL Flammability Rating 94V-0
? Terminals: Solderable per MIL-STD-202,
Method 208
? Weight: 0.006 grams(approx.)
DEVICE MARKING:
702
PACKAGE INFORMATION
Pa

1.7. 2n7002dw.pdf Size:212K _wietron

2N7002DW
Dual N-Channel MOSFET
6
5
4
1
2
3
Features:
* We declare that the material of product are Halogen Free and
SOT-363(SC-88)
compliance with RoHS requirements.
* ESD Protected:1000V
3 2 1
D2 G1 S1
S2 G2 D1
4 5 6
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage VDS 60 V
Drain-Gate Voltage RGS1.8. 2n7002dw1t1.pdf Size:375K _willas

FM120-M
WILLAS
THRU
2N7002DW1T1
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Small Signal MOSFET 115 mAmps,60 Volts
SOD-123 PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
N–Channel SOT-363
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted applic

1.9. 2n7002dw.pdf Size:1367K _kexin

SMD Type MOSFET
Dual N-Channel MOSFET
2N7002DW
■ Features
● VDS (V) = 60V
● ID = 115 mA (VGS = 10V)
● RDS(ON) < 7.5 Ω (VGS = 5V)
● Low Input Capacitance
● Fast Switching Speed
● Low On-Resistance
1.S2 4.S1
2.G2 5.G1
3.D1 6.D2
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 60
Drain-Gate Voltage @ RGS ≤ 1M

1.10. am2n7002dw.pdf Size:454K _ait_semi

AiT Semiconductor Inc. AM2N7002DW
www.ait-ic.com N-CHANNEL MOSFET
SMALL SIGNAL MOSFET 115mA, 60 VOLTS
DESCRIPTION FEATURES
Available in SOT-363 package.  ESD Protected: 1000V
 Available in SOT-363 package
ORDERING INFORMATION N CHANNEL MOSFET
Package Type Part Number
SOT-363 AM2N7002DWC6R
C6
(SC70-6) AM2N7002DWC6VR
V: Halogen free Package
Note R: Tape & Reel
SPQ:

Другие MOSFET… ZVP3306F
, ZVP3310A
, ZVP3310F
, ZVP4105A
, ZVP4424A
, ZVP4424G
, 2N7000BU
, 2N7000TA
, 2SK163
, 2N7002K
, 2N7002KW
, 2N7002MTF
, 2N7002T
, 2N7002V
, 2N7002VA
, 2N7002W
, BSS138K
.

2N7002P Datasheet (PDF)

1.1. 2n7002pt.pdf Size:306K _philips

2N7002PT
60 V, 310 mA N-channel Trench MOSFET
Rev. 1 2 July 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
? Logic-level compatible
? Very fast switching
? Trench MOSFET technology

1.2. 2n7002p.pdf Size:311K _philips

2N7002P
60 V, 360 mA N-channel Trench MOSFET
Rev. 02 29 July 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
AEC-Q101 qualified Trench MOSFET technology
Logic-level compatible

 1.3. 2n7002pw.pdf Size:148K _philips

2N7002PW
60 V, 310 mA N-channel Trench MOSFET
Rev. 02 29 July 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323
(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
AEC-Q101 qualified Trench MOSFET technology
Logic-level compati

1.4. 2n7002ps.pdf Size:354K _philips

2N7002PS
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 1 July 2010 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET te

2V7002L Datasheet (PDF)

1.1. 2v7002l 2n7002l.pdf Size:90K _upd

2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, N-Channel SOT-23
Features
• 2V Prefix for Automotive and Other Applications Requiring Site and
http://onsemi.com
Change Controls
• AEC Qualified — 2V7002L
V(BR)DSS RDS(on) MAX ID MAX
• PPAP Capable — 2V7002L
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
7.5 W @ 10 V,
60 V 115 mA
Compliant 500 mA
N-Channel

4.1. 2v7002k 2n7002k.pdf Size:64K _upd

2N7002K, 2V7002K
Small Signal MOSFET
60 V, 380 mA, Single, N-Channel, SOT-23
Features
• ESD Protected
• Low RDS(on)
www.onsemi.com
• Surface Mount Package
• 2V Prefix for Automotive and Other Applications Requiring Unique
V(BR)DSS RDS(on) MAX ID MAX
Site and Control Change Requirements; AEC-Q101 Qualified and
1.6 W @ 10 V
PPAP Capable
60 V 380 mA
2.5 W @ 4.5 V
• These D

4.2. 2v7002w 2n7002w.pdf Size:61K _upd

2N7002W, 2V7002W
Small Signal MOSFET
60 V, 340 mA, Single, N-Channel, SC-70
Features
• ESD Protected
• Low RDS(on)
www.onsemi.com
• Small Footprint Surface Mount Package
• 2V Prefix for Automotive and Other Applications Requiring Unique
V(BR)DSS RDS(on) MAX ID MAX
Site and Control Change Requirements; AEC-Q101 Qualified and
(Note 1)
PPAP Capable
1.6 W @ 10 V
• These Devi

2N7002CK Datasheet (PDF)

1.1. 2n7002ck.pdf Size:76K _philips

2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 11 September 2009 Product data sheet
1. Product profile
1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features
Logic-level compatible
Very fast switching
Trench MOSFET techn

3.1. 2n7002c1c 2n7002c1d.pdf Size:329K _update-mosfet

N-CHANNEL ENHANCEMENT
MODE MOSFET
2N7002C1A / 2N7002C1B,
2N7002C1C / 2N7002C1D
• VDSS = 60V , ID = 115mA, RDS(ON) = 7.5Ω
• Fast Switching
• Low Threshold Voltage
• Integral Source-Drain Body Diode
• Hermetic Ceramic Surface Mount Package (SOT-23 compatible)
• High Reliability Screening Options Available
• Variants C1C & C1D with solder dip finished pads (63Sn

3.2. 2n7002csm.pdf Size:174K _update-mosfet

N-CHANNEL ENHANCEMENT
MODE MOSFET
2N7002CSM
• VDSS = 60V , ID = 115mA, RDS(ON) = 7.5Ω
• Fast Switching
• Low Threshold Voltage
• Integral Source-Drain Body Diode
• Hermetic Ceramic Surface Mount Package (SOT-23 compatible)
• High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VDS
Drain – Source Voltage

 3.3. 2n7002c1a 2n7002c1b.pdf Size:289K _update-mosfet

N-CHANNEL ENHANCEMENT
MODE MOSFET
2N7002C1
• VDSS = 60V , ID = 115mA, RDS(ON) = 7.5Ω
• Fast Switching
• Low Threshold Voltage
• Integral Source-Drain Body Diode
• Hermetic Ceramic Surface Mount Package (SOT-23 compatible)
• High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VDS
Drain – Source Voltage 6

2N7002KDW Datasheet (PDF)

1.1. 2n7002kdw.pdf Size:425K _secos

2N7002KDW
115mA, 60V
Dual N-Channel Small Signal MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
SOT-363
FEATURES
A
? Low on-resistance
E
L
? Fast switching Speed 6 5 4
? Low-voltage drive
? Easily designed drive circuits
B
? ESD protected:2000V
1 2 3
F
C H
6 5 4
MECHANICAL DATA
J
D2 G1 S1 D G K
? Case:

1.2. 2n7002kdw.pdf Size:161K _wietron

2N7002KDW
Dual N-Channel MOSFET
6
5
P b Lead(Pb)-Free 4
1
2
3
Features:
* Low On-Resistance
SOT-363(SC-88)
* Fast Switching Speed
* Low-voltage drive
6 5 4
* Easily designed drive circuits
D2 G1 S1
* ESD Protected:2000V
Mechanical Data:
*Case: SOT-363, Molded Plastic
*Case Material-UL Flammability Rating 94V-0
S2 G2 D1
*Terminals: Solderable per MIL-STD-202, Method 208
1 2 3

 2.1. tsm2n7002kdcu6.pdf Size:194K _update_mosfet

 TSM2N7002KD
60V N-Channel MOSFET
SOT-363
PRODUCT SUMMARY
Pin Definition:
1. Source 2 6. Drain 2
VDS (V) RDS(on)(mΩ) ID (A)
2. Gate 2 5. Gate 1
3. Drain 1 4. Source 1
2 @ VGS = 10V 300
60
4 @ VGS = 4.5V 200
Features Block Diagram
● Low On-Resistance
● ESD Protection
● High Speed Switching
● Low Voltage Drive
Ordering Information
Part No. Package Pa

2N7002DW Datasheet (PDF)

1.1. am2n7002dw.pdf Size:454K _upd-mosfet

AiT Semiconductor Inc. AM2N7002DW
www.ait-ic.com N-CHANNEL MOSFET
SMALL SIGNAL MOSFET 115mA, 60 VOLTS
DESCRIPTION FEATURES
Available in SOT-363 package.  ESD Protected: 1000V
 Available in SOT-363 package
ORDERING INFORMATION N CHANNEL MOSFET
Package Type Part Number
SOT-363 AM2N7002DWC6R
C6
(SC70-6) AM2N7002DWC6VR
V: Halogen free Package
Note R: Tape & Reel
SPQ:

1.2. l2n7002dw1t1g.pdf Size:296K _update_mosfet

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps,60 Volts
L2N7002DW1T1G
N–Channel SC-88
• Pb-Free Package is Available.
• ESD Protected:1000V
MAXIMUM RATINGS
Rating Symbol Value Unit
3 2 1
Drain-Source Voltage VDSS 60 Vdc
D2 G1 S1
Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc
Drain Current ID ±115 mAdc
ID ±75
— Continuous TC = 25°C (Note 1)
IDM ±800
— Continuo

 1.3. 2n7002dw.pdf Size:257K _fairchild_semi

October 2007
2N7002DW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
SC70-6 (SOT363)
1
1
Marking : 2N
Absolute Maximum Ratings * Ta = 25°C un

1.4. 2n7002dw.pdf Size:84K _diodes

2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features Mechanical Data
• Dual N-Channel MOSFET • Case: SOT-363
• Low On-Resistance • Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Low Gate Threshold Voltage
• Moisture Sensitivity: Level 1 per J-STD-020
• Low Input Capacitance
• Termina

 1.5. 2n7002dw.pdf Size:285K _utc

UNISONIC TECHNOLOGIES CO., LTD
2N7002DW Power MOSFET
300mA, 60V DUAL
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N7002DW uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* High Density Cell Design for Low R .
DS(ON)
* Voltage Contr

1.6. s2n7002dw.pdf Size:247K _secos

S2N7002DW
115mA, 60V
Dual N-Channel MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
SOT-363
MECHANICAL DATA
? Case: SOT-363,Molded Plastic.
? Case Material-UL Flammability Rating 94V-0
? Terminals: Solderable per MIL-STD-202,
Method 208
? Weight: 0.006 grams(approx.)
DEVICE MARKING:
702
PACKAGE INFORMATION
Pa

1.7. 2n7002dw.pdf Size:212K _wietron

2N7002DW
Dual N-Channel MOSFET
6
5
4
1
2
3
Features:
* We declare that the material of product are Halogen Free and
SOT-363(SC-88)
compliance with RoHS requirements.
* ESD Protected:1000V
3 2 1
D2 G1 S1
S2 G2 D1
4 5 6
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage VDS 60 V
Drain-Gate Voltage RGS1.8. 2n7002dw1t1.pdf Size:375K _willas

FM120-M
WILLAS
THRU
2N7002DW1T1
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Small Signal MOSFET 115 mAmps,60 Volts
SOD-123 PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
N–Channel SOT-363
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted applic

1.9. 2n7002dw.pdf Size:1367K _kexin

SMD Type MOSFET
Dual N-Channel MOSFET
2N7002DW
■ Features
● VDS (V) = 60V
● ID = 115 mA (VGS = 10V)
● RDS(ON) < 7.5 Ω (VGS = 5V)
● Low Input Capacitance
● Fast Switching Speed
● Low On-Resistance
1.S2 4.S1
2.G2 5.G1
3.D1 6.D2
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 60
Drain-Gate Voltage @ RGS ≤ 1M

1.10. am2n7002dw.pdf Size:454K _ait_semi

AiT Semiconductor Inc. AM2N7002DW
www.ait-ic.com N-CHANNEL MOSFET
SMALL SIGNAL MOSFET 115mA, 60 VOLTS
DESCRIPTION FEATURES
Available in SOT-363 package.  ESD Protected: 1000V
 Available in SOT-363 package
ORDERING INFORMATION N CHANNEL MOSFET
Package Type Part Number
SOT-363 AM2N7002DWC6R
C6
(SC70-6) AM2N7002DWC6VR
V: Halogen free Package
Note R: Tape & Reel
SPQ:

2N7002B Datasheet (PDF)

1.1. 2n7002bkmb.pdf Size:661K _update-mosfet

2N7002BKMB
60 V, single N-channel Trench MOSFET
Rev. 2 — 13 June 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching  Logic-level compa

1.2. t2n7002bk.pdf Size:212K _update_mosfet

T2N7002BK
MOSFETs Silicon N-Channel MOS
T2N7002BK
T2N7002BK
T2N7002BK
T2N7002BK
1. Applications
1. Applications
1. Applications
1. Applications
• High-Speed Switching
2. Features
2. Features
2. Features
2. Features
(1) ESD(HBM) level 2 kV
(2) Low drain-source on-resistance
: RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5 V)
RDS(ON) = 1.2 Ω (

 1.3. 2n7002bkt.pdf Size:334K _philips

2N7002BKT
60 V, 290 mA N-channel Trench MOSFET
Rev. 1 15 June 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology

1.4. 2n7002b.pdf Size:237K _auk

2N7002B
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
 ESD rating: 2000V (HBM)
 Low On-Resistance: RDS(on)

2N7002L Datasheet (PDF)

1.1. 2v7002l 2n7002l.pdf Size:90K _upd

2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, N-Channel SOT-23
Features
• 2V Prefix for Automotive and Other Applications Requiring Site and
http://onsemi.com
Change Controls
• AEC Qualified — 2V7002L
V(BR)DSS RDS(on) MAX ID MAX
• PPAP Capable — 2V7002L
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
7.5 W @ 10 V,
60 V 115 mA
Compliant 500 mA
N-Channel

1.2. l2n7002lt1g.pdf Size:340K _update_mosfet

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
L2N7002LT1G
115 mAmps, 60 Volts
N–Channel SOT–23
3

• We declare that the material of product
1
compliance with RoHS requirements.
2
• ESD Protected:1000V
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 60 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vd

 1.3. 2n7002lt1rev2.pdf Size:94K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by 2N7002LT1/D
TMOS FET Transistor
2N7002LT1
3 DRAIN
NChannel Enhancement
Motorola Preferred Device
1
GATE
3
2 SOURCE
1
MAXIMUM RATINGS
2
Rating Symbol Value Unit
DrainSource Voltage VDSS 60 Vdc
CASE 31808, STYLE 21
SOT23 (TO236AB)
DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc
Drain Current Continuous TC = 25C(1

1.4. 2n7002lt1.pdf Size:98K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by 2N7002LT1/D
TMOS FET Transistor
2N7002LT1
3 DRAIN
NChannel Enhancement
Motorola Preferred Device
1
GATE
3
2 SOURCE
1
MAXIMUM RATINGS
2
Rating Symbol Value Unit
DrainSource Voltage VDSS 60 Vdc
CASE 31808, STYLE 21
SOT23 (TO236AB)
DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc
Drain Current Continuous TC = 25C(1

 1.5. 2n7002l.pdf Size:92K _onsemi

2N7002L
Small Signal MOSFET
60 V, 115 mA, N-Channel SOT-23
Features
AEC Qualified
http://onsemi.com
PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
V(BR)DSS RDS(on) MAX ID MAX
Compliant
7.5 W @ 10 V,
60 V 115 mA
500 mA
MAXIMUM RATINGS
Rating Symbol Value Unit
N-Channel
Drain-Source Voltage VDSS 60 Vdc
3
Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vd

1.6. 2n7002ll.pdf Size:160K _utc

UNISONIC TECHNOLOGIES CO., LTD
2N7002LL Preliminary Power MOSFET
60V, 115mA N-CHANNEL
POWER MOSFET
DESCRIPTION
3
The UTC 2N7002LL uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
1
voltages. This device is suitable for use as a load switch or in
2
PWM applications.
FEATURES
SOT-23-3
(JEDEC TO-236)
* RDS(ON) = 7.5? @VGS

1.7. 2n7002lt1.pdf Size:370K _willas

FM120-M
WILLAS
THRU
2N7002LT1
Small Signal MOSFET 115 mAmps, 60 Volts
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123 PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
N

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