Интернет-справочник основных параметров транзисторов. параметры транзистора fqp50n06l

RFP50N05L MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: RFP50N05L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 110
W

Предельно допустимое напряжение сток-исток (Uds): 50
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Пороговое напряжение включения Ugs(th): 2
V

Максимально допустимый постоянный ток стока (Id): 50
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 140
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.022
Ohm

Тип корпуса: TO220AB

RFP50N05L
Datasheet (PDF)

1.1. rfp50n05l.pdf Size:161K _fairchild_semi

RFP50N05L
Data Sheet August 2004
50A, 50V, 0.022 Ohm, Logic Level, Features
N-Channel Power MOSFETs
• 50A, 50V
These are logic-level N-channel power MOSFETs
• rDS(ON) = 0.022Ω
manufactured using the MegaFET process. This process,
• UIS SOA Rating Curve (Single Pulse)
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,

1.2. rfg50n05l rfp50n05l.pdf Size:51K _intersil

RFG50N05L, RFP50N05L
Data Sheet July 1999 File Number 2424.3
50A, 50V, 0.022 Ohm, Logic Level, Features
N-Channel Power MOSFETs
• 50A, 50V
These are logic-level N-channel power MOSFETs
• rDS(ON) = 0.022Ω
manufactured using the MegaFET process. This process,
• UIS SOA Rating Curve (Single Pulse)
which uses feature sizes approaching those of LSI
integrated circuits gives optimum

 3.1. rfg50n06 rfp50n06 rf1s50n06sm.pdf Size:373K _fairchild_semi

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet January 2002
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
• 50A, 60V
These N-Channel power MOSFETs are manufactured using
• rDS(ON) = 0.022Ω
the MegaFET process. This process, which uses feature
• Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of silico

3.2. rfg50n06le rfp50n06le rf1s50n06lesm.pdf Size:154K _intersil

RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level Features
N-Channel Power MOSFETs
• 50A, 60V
These N-Channel enhancement mode power MOSFETs are
• rDS(ON) = 0.022Ω
manufactured using the latest manufacturing process
• Temperature Compensating PSPICE Model
technology. This process, which uses feature sizes
approa

 3.3. rfp50n06.pdf Size:74K _intersil

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet July 1999 File Number 3575.4
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
50A, 60V
These N-Channel power MOSFETs are manufactured using
rDS(ON) = 0.022?
the MegaFET process. This process, which uses feature
Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of silico

3.4. rfp50n06.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor RFP50N06
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for use in applications such as swithing
Regulators,switc

Другие MOSFET… RFP30P06
, RFP40N10
, RFP40N10LE
, RFP45N06
, RFP45N06LE
, RFP4N05L
, RFP4N06L
, RFP4N100
, J113
, RFP50N06
, RFP50N06LE
, RFP60P03
, RFP70N03
, RFP70N06
, RFP7N10LE
, RFP8N20L
, RFP8P05
.

FTK50N06P Datasheet (PDF)

1.1. ftk50n06 ftk50n06p f.pdf Size:222K _first_silicon

SEMICONDUCTOR
FTK50N06P / F
TECHNICAL DATA
Power MOSFET
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
P :
1
TO-220
DESCRIPTION
The FTK50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
F :
threshold voltages of 4 volt.
1
It is mainly suitable electronic

2.1. ftk50n06.pdf Size:222K _upd-mosfet

SEMICONDUCTOR
FTK50N06P / F
TECHNICAL DATA
Power MOSFET
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
P :
1
TO-220
DESCRIPTION
The FTK50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
F :
threshold voltages of 4 volt.
1
It is mainly suitable electronic

2.2. ftk50n06d.pdf Size:336K _first_silicon

SEMICONDUCTOR
FTK50N06D
TECHNICAL DATA
N-Channel Power MOSFET
A
I
C
J
GENERAL DESCRIPTION
The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS
A 6 50 ± 0 2
provide excellent RDS(ON) with low gate charge.
B 5 60 ± 0 2
C 5 20 ± 0 2
It can be used in awide variety of applications.
D 1 50 ± 0 2
E 2 70 ± 0 2
F 2 30 ± 0 1
H
H 1 00 MAX
I 2 30 ± 0

 2.3. ftk50n06dd.pdf Size:255K _first_silicon

SEMICONDUCTOR
FTK50N06DD
TECHNICAL DATA
N-Channel Power MOSFET (60V/50A)
Purpose
Suited for low voltage applications such as automotive,
DC/DC Converters, and high efficiency switching
for power management in portable and battery operated products
Feature
Low RDS(on),low gate charge,low Crss,fast switching.
Absolute maximum ratings(Ta=25℃)
Rating
Symbol Unit
V 60 V
DSS

SQP50N06-09L Datasheet (PDF)

1.1. sqp50n06-09l.pdf Size:127K _upd-mosfet

SQP50N06-09L
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET Power MOSFET
VDS (V) 60
• 100 % Rg and UIS Tested
RDS(on) () at VGS = 10 V 0.009
• AEC-Q101 Qualifiedd
RDS(on) () at VGS = 4.5 V 0.013
• Material categorization:
ID (A) 50
For definitions of compliance please see
Configuration Single
ww

5.1. sqp50p03-07.pdf Size:176K _upd-mosfet

SQP50P03-07
www.vishay.com
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) — 30
Definition
RDS(on) () at VGS = — 10 V 0.0070
• TrenchFET Power MOSFET
RDS(on) () at VGS = — 4.5 V 0.0110
• Package with Low Thermal Resistance
ID (A) — 50
• 100 % Rg and UIS Tested
Configuration

CEP50N06 Datasheet (PDF)

1.1. cep50n06 ceb50n06.pdf Size:370K _upd-mosfet

CEP50N06/CEB50N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
G
CEB SERIES
CEP SERIES
S
TO-263(DD-PAK)
TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

1.2. cep50n06 ceb50n06.pdf Size:370K _cet

CEP50N06/CEB50N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
G
CEB SERIES
CEP SERIES
S
TO-263(DD-PAK)
TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

 4.1. cep50n10 ceb50n10.pdf Size:446K _cet

CEP50N10/CEB50N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 50A, RDS(ON) = 30mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
G
CEB SERIES
CEP SERIES
S
TO-263(DD-PAK)
TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

RFG50N06 Datasheet (PDF)

1.1. rfg50n06 rfp50n06 rf1s50n06sm.pdf Size:373K _fairchild_semi

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet January 2002
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
• 50A, 60V
These N-Channel power MOSFETs are manufactured using
• rDS(ON) = 0.022Ω
the MegaFET process. This process, which uses feature
• Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of silico

1.2. rfg50n06le rfp50n06le rf1s50n06lesm.pdf Size:154K _intersil

RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level Features
N-Channel Power MOSFETs
• 50A, 60V
These N-Channel enhancement mode power MOSFETs are
• rDS(ON) = 0.022Ω
manufactured using the latest manufacturing process
• Temperature Compensating PSPICE Model
technology. This process, which uses feature sizes
approa

 3.1. rfg50n05l rfp50n05l.pdf Size:51K _intersil

RFG50N05L, RFP50N05L
Data Sheet July 1999 File Number 2424.3
50A, 50V, 0.022 Ohm, Logic Level, Features
N-Channel Power MOSFETs
• 50A, 50V
These are logic-level N-channel power MOSFETs
• rDS(ON) = 0.022Ω
manufactured using the MegaFET process. This process,
• UIS SOA Rating Curve (Single Pulse)
which uses feature sizes approaching those of LSI
integrated circuits gives optimum

FTK50N06F Datasheet (PDF)

2.1. ftk50n06.pdf Size:222K _upd-mosfet

SEMICONDUCTOR
FTK50N06P / F
TECHNICAL DATA
Power MOSFET
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
P :
1
TO-220
DESCRIPTION
The FTK50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
F :
threshold voltages of 4 volt.
1
It is mainly suitable electronic

2.2. ftk50n06 ftk50n06p f.pdf Size:222K _first_silicon

SEMICONDUCTOR
FTK50N06P / F
TECHNICAL DATA
Power MOSFET
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
P :
1
TO-220
DESCRIPTION
The FTK50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
F :
threshold voltages of 4 volt.
1
It is mainly suitable electronic

 2.3. ftk50n06d.pdf Size:336K _first_silicon

SEMICONDUCTOR
FTK50N06D
TECHNICAL DATA
N-Channel Power MOSFET
A
I
C
J
GENERAL DESCRIPTION
The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS
A 6 50 ± 0 2
provide excellent RDS(ON) with low gate charge.
B 5 60 ± 0 2
C 5 20 ± 0 2
It can be used in awide variety of applications.
D 1 50 ± 0 2
E 2 70 ± 0 2
F 2 30 ± 0 1
H
H 1 00 MAX
I 2 30 ± 0

2.4. ftk50n06dd.pdf Size:255K _first_silicon

SEMICONDUCTOR
FTK50N06DD
TECHNICAL DATA
N-Channel Power MOSFET (60V/50A)
Purpose
Suited for low voltage applications such as automotive,
DC/DC Converters, and high efficiency switching
for power management in portable and battery operated products
Feature
Low RDS(on),low gate charge,low Crss,fast switching.
Absolute maximum ratings(Ta=25℃)
Rating
Symbol Unit
V 60 V
DSS

RFP50N06 Datasheet (PDF)

1.1. rfg50n06 rfp50n06 rf1s50n06sm.pdf Size:373K _fairchild_semi

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet January 2002
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
• 50A, 60V
These N-Channel power MOSFETs are manufactured using
• rDS(ON) = 0.022Ω
the MegaFET process. This process, which uses feature
• Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of silico

1.2. rfg50n06le rfp50n06le rf1s50n06lesm.pdf Size:154K _intersil

RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level Features
N-Channel Power MOSFETs
• 50A, 60V
These N-Channel enhancement mode power MOSFETs are
• rDS(ON) = 0.022Ω
manufactured using the latest manufacturing process
• Temperature Compensating PSPICE Model
technology. This process, which uses feature sizes
approa

 1.3. rfp50n06.pdf Size:74K _intersil

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet July 1999 File Number 3575.4
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
50A, 60V
These N-Channel power MOSFETs are manufactured using
rDS(ON) = 0.022?
the MegaFET process. This process, which uses feature
Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of silico

1.4. rfp50n06.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor RFP50N06
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for use in applications such as swithing
Regulators,switc

SUD50N024-06P Datasheet (PDF)

1.1. sud50n024-09p.pdf Size:59K _upd

SUD50N024-09P
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
VDS (V) rDS(on) (W) ID (A)d
D PWM Optimized for High Efficiency
0.0095 @ VGS = 10 V 49
24c
24c
APPLICATIONS
0.017 @ VGS = 4.5 V 36
D High-Side Synchronous Buck DC/DC
D
Conversion
TO-252
— Desktop
— Server
G
Drain Connected to Tab

1.2. sud50n024-06p.pdf Size:40K _update

SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A)d D 175_C Junction Temperature
D PWM Optimized for High Efficiency
0.006 @ VGS = 10 V 80
24C
24C
APPLICATIONS
0.0095 @ VGS = 4.5 V 64
D Synchronous Buck DC/DC Conversion
— Desktop
D — Server
TO-252
G
Drain Connected to Tab

 1.3. sud50n024-09p.pdf Size:59K _vishay

1.4. sud50n024-06p.pdf Size:88K _vishay

RFP50N05L Datasheet (PDF)

1.1. rfp50n05l.pdf Size:161K _fairchild_semi

RFP50N05L
Data Sheet August 2004
50A, 50V, 0.022 Ohm, Logic Level, Features
N-Channel Power MOSFETs
• 50A, 50V
These are logic-level N-channel power MOSFETs
• rDS(ON) = 0.022Ω
manufactured using the MegaFET process. This process,
• UIS SOA Rating Curve (Single Pulse)
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,

1.2. rfg50n05l rfp50n05l.pdf Size:51K _intersil

RFG50N05L, RFP50N05L
Data Sheet July 1999 File Number 2424.3
50A, 50V, 0.022 Ohm, Logic Level, Features
N-Channel Power MOSFETs
• 50A, 50V
These are logic-level N-channel power MOSFETs
• rDS(ON) = 0.022Ω
manufactured using the MegaFET process. This process,
• UIS SOA Rating Curve (Single Pulse)
which uses feature sizes approaching those of LSI
integrated circuits gives optimum

 3.1. rfg50n06 rfp50n06 rf1s50n06sm.pdf Size:373K _fairchild_semi

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet January 2002
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
• 50A, 60V
These N-Channel power MOSFETs are manufactured using
• rDS(ON) = 0.022Ω
the MegaFET process. This process, which uses feature
• Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of silico

3.2. rfg50n06le rfp50n06le rf1s50n06lesm.pdf Size:154K _intersil

RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level Features
N-Channel Power MOSFETs
• 50A, 60V
These N-Channel enhancement mode power MOSFETs are
• rDS(ON) = 0.022Ω
manufactured using the latest manufacturing process
• Temperature Compensating PSPICE Model
technology. This process, which uses feature sizes
approa

 3.3. rfp50n06.pdf Size:74K _intersil

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet July 1999 File Number 3575.4
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
50A, 60V
These N-Channel power MOSFETs are manufactured using
rDS(ON) = 0.022?
the MegaFET process. This process, which uses feature
Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of silico

3.4. rfp50n06.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor RFP50N06
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for use in applications such as swithing
Regulators,switc

UTT50N06 Datasheet (PDF)

1.1. utt50n06.pdf Size:352K _utc

UNISONIC TECHNOLOGIES CO., LTD
UTT50N06 Power MOSFET
50A, 60V N-CHANNEL
POWER MOSFET
? DESCRIPTION
The UTC UTT50N06 is an N-channel power MOSFET using
UTC’s advanced technology to provide customers with a
minimum on-state resistance and superior switching performance.
The UTC UTT50N06 is generally applied in low power
switching mode power appliances and electronic ballast.
? FE

5.1. utt50p06.pdf Size:171K _utc

UNISONIC TECHNOLOGIES CO., LTD
UTT50P06 Power MOSFET
-50A, -60V P-CHANNEL (D-S)
POWER MOSFET
1
TO-220
? DESCRIPTION
The UTC UTT50P06 is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance, and it can also withstand
1
high energy in the avalanche.
This UTC UTT50P06 is suitable for load s

5.2. utt50p04.pdf Size:139K _utc

UNISONIC TECHNOLOGIES CO., LTD
UTT50P04 Preliminary Power MOSFET
-40V, -60A P-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UTT50P04 is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance, and it can also withstand
high energy in the avalanche.
This UTC UTT50P04 is suitable for motor drivers,

 5.3. utt50p10.pdf Size:121K _utc

UNISONIC TECHNOLOGIES CO., LTD
UTT50P10 Preliminary Power MOSFET
-50A, -100V P-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UTT50P10 is a P-channel power MOSFET using
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance. It can also
withstand high energy in the avalanche.
FEATURES
* VDS=-100V
* ID =-50A
* RDS(ON)=0.

RFP50N06LE Datasheet (PDF)

1.1. rfg50n06le rfp50n06le rf1s50n06lesm.pdf Size:154K _intersil

RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level Features
N-Channel Power MOSFETs
• 50A, 60V
These N-Channel enhancement mode power MOSFETs are
• rDS(ON) = 0.022Ω
manufactured using the latest manufacturing process
• Temperature Compensating PSPICE Model
technology. This process, which uses feature sizes
approa

2.1. rfg50n06 rfp50n06 rf1s50n06sm.pdf Size:373K _fairchild_semi

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet January 2002
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
• 50A, 60V
These N-Channel power MOSFETs are manufactured using
• rDS(ON) = 0.022Ω
the MegaFET process. This process, which uses feature
• Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of silico

2.2. rfp50n06.pdf Size:74K _intersil

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet July 1999 File Number 3575.4
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
50A, 60V
These N-Channel power MOSFETs are manufactured using
rDS(ON) = 0.022?
the MegaFET process. This process, which uses feature
Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of silico

 2.3. rfp50n06.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor RFP50N06
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for use in applications such as swithing
Regulators,switc

FQP50N06L Datasheet (PDF)

1.1. fqp50n06l.pdf Size:694K _fairchild_semi

May 2001
TM
QFET
FQP50N06L
60V LOGIC N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 24.5 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 90 pF)
This advanced technology has been especially t

1.2. fqp50n06l.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor FQP50N06L
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High current , high speed switching
·Switch mode power supplies

 2.1. fqp50n06.pdf Size:644K _fairchild_semi

TM
QFET
FQP50N06
60V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 65 pF)
This advanced technology has been especially tailored to
• Fast

2.2. fqp50n06.pdf Size:231K _inchange_semiconductor

isc N-Channel MOSFET Transistor FQP50N06
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High current , high speed switching
·Switch mode power supplies

FQP50N06 Datasheet (PDF)

1.1. fqp50n06l.pdf Size:694K _fairchild_semi

May 2001
TM
QFET
FQP50N06L
60V LOGIC N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 24.5 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 90 pF)
This advanced technology has been especially t

1.2. fqp50n06.pdf Size:644K _fairchild_semi

TM
QFET
FQP50N06
60V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 65 pF)
This advanced technology has been especially tailored to
• Fast

 1.3. fqp50n06l.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor FQP50N06L
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High current , high speed switching
·Switch mode power supplies

1.4. fqp50n06.pdf Size:231K _inchange_semiconductor

isc N-Channel MOSFET Transistor FQP50N06
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High current , high speed switching
·Switch mode power supplies

Результаты подбора MOSFET (поиска аналога)

Маркировка Pol Struct Pd Uds Ugs Ugs(th) Id Tj Qg Tr Cd Rds Caps
110N10 N MOSFET 220 100 20 110 175 24 380 0.009 TO220
N MOSFET 330 100 20 150 175 100 540 0.0068 TO220
140N10 N MOSFET 215 100 25 140 175 116 942 0.0072 TO220
N MOSFET 150 70 25 80 175 15 430 0.008 TO220
75N75 N MOSFET 300 75 20 80 175 208 773 0.0095 TO220 TO220F1 TO220F TO263
80N08TR N MOSFET 230 80 25 80 175 29.3 415 0.0105 TO220
N MOSFET 180 86 20 80 175 110 260 0.0085 TO220
AM90N06-16P N MOSFET 300 60 20 1 90 175 21 17 184 0.0165 TO220AB
APM7512NF N MOSFET 273 75 25 80 175 14 520 0.012 TO220
CEP6036 N MOSFET 167 60 20 135 175 23 450 0.0046 TO220
CEP60N06G N MOSFET 125 60 20 60 175 17 495 0.016 TO220
CEP75N06 N MOSFET 125 60 20 75 175 5.5 735 0.012 TO220
CEP75N06G N MOSFET 150 60 20 75 175 17 495 0.013 TO220
CEP80N15 N MOSFET 300 150 20 76 175 24 455 0.019 TO220
CEP85N75 N MOSFET 200 75 30 86 175 9 715 0.012 TO220
CEP85N75V N MOSFET 200 75 30 85 175 7 670 0.013 TO220
CM120N06 N MOSFET 150 60 20 120 175 435 0.0076 TO220
CM84N06 N MOSFET 200 60 20 84 175 375 0.01 TO220
CS3205_A8 N MOSFET 230 60 20 120 175 82 750 0.008 TO220AB
CS4145 N MOSFET 200 60 20 84 175 75 375 0.01 TO220AB
CS75N75_B8H N MOSFET 230 75 20 100 175 57 720 0.0115 TO220AB
CSD18532KCS N MOSFET 250 60 20 2.2 100 175 21 5.3 470 0.0042 TO220
CSD18533KCS N MOSFET 192 60 20 2.3 100 175 14 4.8 300 0.0063 TO220
CSD18542KCS N MOSFET 200 60 20 2.2 170 175 21 5 570 0.004 TO220
CSZ44V-1 N MOSFET 150 60 20 55 175 27 280 0.01 TO220AB
FDP030N06B_F102 N MOSFET 205 60 20 120 175 0.0031 TO220
FQP50N06L N MOSFET 121 60 20 2.5 52 175 24.5 0.021 TO220
FTK6808 N MOSFET 181 68 20 84 175 15.6 300 0.008 TO220
FTK70N06 N MOSFET 147 60 20 70 175 200 800 0.015 TO220
FTP18N06 N MOSFET 150 60 20 59 175 61 420 0.018 TO220
FTP18N06N N MOSFET 130 60 20 55 175 37 222 0.018 TO220
G1010 N MOSFET 200 60 20 100 175 50.8 671.5 0.01 TO220
IPP070N06LG N MOSFET 214 60 80 0.007 TO220
IPP070N06NG N MOSFET 250 60 80 0.007 TO220
IPP08CN10NG N MOSFET 167 100 95 0.0085 TO220
IPP110N06LG N MOSFET 158 60 78 0.0113 TO220
KF80N08P N MOSFET 230 75 20 80 175 228 840 0.0085 TO220AB
KMB060N60FA N MOSFET 150 60 25 60 175 220 360 0.0115 TO220IS
KMB060N60PA N MOSFET 150 60 25 60 175 220 360 0.0115 TO220AB
KMB080N75PA N MOSFET 300 75 25 80 175 25 730 0.01 TO220AB
KX120N06 N MOSFET 150 60 20 100 175 10.8 440 0.0057 TO220
L75N75 N MOSFET 300 75 20 75 175 100 660 0.013 TO220
MXP1006AT N MOSFET 333 100 20 155 175 155 425 0.006 TO220
MXP1007AT N MOSFET 333 100 20 143 175 600 0.007 TO220
MXP1008AT N MOSFET 242 100 20 115 175 130 536 0.008 TO220
MXP1015AT N MOSFET 231 100 20 82 175 71 317 0.015 TO220
MXP1018CT N MOSFET 150 100 76 175 73 707 0.018 TO220
MXP6004CTS N MOSFET 330 60 215 175 150 1260 0.004 TO220
MXP6006CT N MOSFET 158 60 115 175 52 522 0.006 TO220
MXP6006DT N MOSFET 158 60 20 115 175 43 534 0.006 TO220
MXP6008CT N MOSFET 150 60 20 109 175 43 435 0.008 TO220
MXP6010CTS N MOSFET 150 60 107 175 45 343 0.01 TO220
MXP65D7AT N MOSFET 231 60 20 142 175 50 610 0.0057 TO220
MXP8004AT N MOSFET 333 80 20 200 175 126 980 0.004 TO220
MXP84D7AT N MOSFET 333 80 20 179 175 135 660 0.0047 TO220
P1510ATG N MOSFET 150 100 20 64 175 110 420 0.015 TO220
PHP110NQ08LT N MOSFET 230 75 20 2 75 175 185 905 0.0085 TO220AB
RJK1008DPN N MOSFET 125 100 80 0.0085 TO220AB
SPP70N10L N MOSFET 250 100 20 2 70 175 250 640 0.016 PTO220
SPP80N08S2L N MOSFET 300 75 20 80 175 81 993 0.0071 TO220
SSE90N08-08 N MOSFET 300 80 20 90 175 45 449 0.011 TO220P
SSE90N10-14 N MOSFET 300 100 20 90 175 49 392 0.016 TO220P
SSRF90N06-10 N MOSFET 300 60 20 90 175 10 0.0099 ITO220
SSS1510 N MOSFET 300 150 20 100 175 105 657 0.0108 TO220

Всего результатов: 64

FQD6N50C Datasheet (PDF)

1.1. fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf Size:757K _fairchild_semi

October 2008
QFET
FQD6N50C / FQU6N50C
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 19nC)
planar stripe, DMOS technology.
• Low Crss (typical 15pF)
This advanced technology has been especially t

5.1. fqd6n60c.pdf Size:678K _fairchild_semi


QFET
FQD6N60C
600V N-Channel MOSFET
Features Description
• 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
• Low gate charge ( typical 16 nC )
stripe, DMOS technology.
This advanced technology has been especially tailored to
• Low Crss ( typical 7 pF)
minimize on-s

5.2. fqd6n60ctm.pdf Size:679K _fairchild_semi


QFET
FQD6N60C
600V N-Channel MOSFET
Features Description
• 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
• Low gate charge ( typical 16 nC )
stripe, DMOS technology.
This advanced technology has been especially tailored to
• Low Crss ( typical 7 pF)
minimize on-s

 5.3. fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf Size:798K _fairchild_semi

October 2008
QFET
FQD6N25 / FQU6N25
250V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 4.4A, 250V, RDS(on) = 1.0Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.6 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 7.5 pF)
This advanced technology has been especia

5.4. fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf Size:654K _fairchild_semi

October 2008
QFET
FQD6N40C / FQU6N40C
400V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16nC)
planar stripe, DMOS technology.
• Low Crss ( typical 15pF)
This advanced technology has been especiall

 5.5. fqd6n40tf fqd6n40tm.pdf Size:723K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD6N40 / FQU6N40
400V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 4.2A, 400V, RDS(on) = 1.15Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 9.5 pF)
This advanced technolog

RFP70N06 Datasheet (PDF)

1.1. rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf Size:229K _fairchild_semi

RFG70N06, RFP70N06, RF1S70N06,
RF1S70N06SM
Data Sheet February 2005
70A, 60V, 0.014 Ohm, N-Channel Power Features
MOSFETs
• 70A, 60V
These are N-Channel power MOSFETs manufactured using
• rDS(on) = 0.014Ω
the MegaFET process. This process, which uses feature
• Temperature Compensated PSPICE Model
sizes approaching those of LSI circuits, gives optimum
utilization of silic

1.2. rfp70n06.pdf Size:230K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor RFP70N06
DESCRIPTION
·Drain Current I =70A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 14mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for use in applications such as sw

 3.1. rfp70n03 rf1s70n03sm.pdf Size:142K _intersil

RFP70N03, RF1S70N03SM
Data Sheet July 1999 File Number 3404.4
70A, 30V, 0.010 Ohm, N-Channel Power Features
MOSFETs
• 70A, 30V
These N-Channel power MOSFETs are manufactured using
• rDS(ON) = 0.010Ω
the MegaFET process. This process, which uses feature
• Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of sili

3.2. rfp70n03.pdf Size:205K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor RFP70N03
·FEATURES
·With TO-220 packaging
·Low switching loss
·Ultra low gate charge
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·AC-DC converters
·LED lighting
·Uninterruptible power supply
·ABSOLUT

FQPF50N06 Datasheet (PDF)

1.1. fqpf50n06.pdf Size:628K _fairchild_semi

May 2001
TM
QFET
FQPF50N06
60V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 31A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 65 pF)
This advanced technology has been especially tailored to

1.2. fqpf50n06l.pdf Size:670K _fairchild_semi

May 2001
TM
QFET
FQPF50N06L
60V LOGIC N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 32.6A, 60V, RDS(on) = 0.021Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 24.5 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 90 pF)
This advanced technology has been especially

 1.3. fqpf50n06.pdf Size:202K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor FQPF50N06
·FEATURES
·With TO-220F packaging
·High speed switching
·Very high commutation ruggedness
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·PFC stages
·LCD & PDP TV
·Power supply
·Switching applications
·ABSOLUTE MAXIM

CS50N06 Datasheet (PDF)

1.1. cs50n06d.pdf Size:253K _update_mosfet

BRD50N06(CS50N06D) N-CHANNEL MOSFET/N 沟道 MOS 晶体管
用途:用于低压电路如:汽车电路、DC/DC 转换、便携式产品的电源高效转换。
Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high
efficiency switching for power management in portable and battery operated products.
特点:R 小,门电荷低,C 小,开关速度

1.2. cs50n06.pdf Size:249K _update_mosfet

BR50N06(CS50N06) N-CHANNEL MOSFET/N 沟道 MOS 晶体管
用途:用于低压电路如:汽车电路、DC/DC 转换、便携式产品的电源高效转换。
Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high
efficiency switching for power management in portable and battery operated products.
特点:R 小,门电荷低,C 小,开关速度快

 1.3. cs50n06.pdf Size:249K _foshan

BR50N06(CS50N06) N-CHANNEL MOSFET/N 沟道 MOS 晶体管
用途:用于低压电路如:汽车电路、DC/DC 转换、便携式产品的电源高效转换。
Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high
efficiency switching for power management in portable and battery operated products.
特点:R 小,门电荷低,C 小,开关速度快

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