2sc4106 datasheet, equivalent, cross reference search

2SC4123 Datasheet (PDF)

1.1. 2sc4123.pdf Size:93K _sanyo

Ordering number:EN2956
NPN Triple Diffused Planar Silicon Transistor
2SC4123
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed (tf=100ns typ).
unit:mm
High breakdown voltage (VCBO=1500V).
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
On-chip damper dio

1.2. 2sc4123.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4123
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Ultrahigh-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

 4.1. 2sc4124.pdf Size:98K _sanyo

Ordering number:EN2962
NPN Triple Diffused Planar Silicon Transistor
2SC4124
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
Adoption of MBIT process.
unit:mm
On-chip damper diode.
2039D
High breakdown voltage (VCBO=1500V).

High speed (tf=100ns typ).
16.0
5.6
3.4
High reliability (Adoption of HVP proces

4.2. 2sc4121.pdf Size:89K _sanyo

 4.3. 2sc4125.pdf Size:88K _sanyo

4.4. 2sc4126.pdf Size:47K _hitachi

2SC4126
Silicon NPN Epitaxial
Application
VHF and UHF wide band amplifier
Outline
MPAK-4
2
3
1
1. Collector
4
2. Emitter
3. Base
4. Emitter
2SC4126
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collector to emitter voltage VCEO 11 V
Emitter to base voltage VEBO 2V
Collector current IC 50 mA
Collector power dissipation PC 150

 4.5. 2sc4124.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4124
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Ultrahigh-definition CRT display horizontal deflection
output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

4.6. 2sc4129.pdf Size:211K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4129
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PAR

4.7. 2sc4125.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC4125
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for very high-definition color display horizontal
deflection output applicaitions.
ABSOLUTE MAXIMUM RATINGS(

2SK4108 Datasheet (PDF)

1.1. 2sk4108.pdf Size:281K _toshiba

2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance : RDS (ON) = 0. 21Ω (typ.)
High forward transfer admittance : |Yfs| = 14 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Max

4.1. 2sk4106.pdf Size:175K _toshiba

2SK4106
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4106
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absol

4.2. 2sk4105.pdf Size:199K _toshiba

2SK4105
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4105
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Abso

 4.3. 2sk4103.pdf Size:296K _toshiba

2SK4103
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4103
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.8S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximu

4.4. 2sk4104.pdf Size:206K _toshiba

2SK4104
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4104
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute M

 4.5. 2sk4107.pdf Size:239K _toshiba

 2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
○ Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance : RDS (ON) = 0. 33 Ω (typ.)
• High forward transfer admittance : |Yfs| = 8.5 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

4.6. 2sk4100ls.pdf Size:97K _sanyo

www.DataSheet4U.com
Ordering number : ENA0778 2SK4100LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4100LS
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guaran

4.7. 2sk4101ls.pdf Size:45K _sanyo

Ordering number : ENA0745 2SK4101LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4101LS
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.
Spec

4.8. 2sk410.pdf Size:50K _hitachi

2SK410
Silicon N-Channel MOS FET
Application
HF/VHF power amplifier
Features
• High breakdown voltage
• You can decrease handling current.
• Included gate protection diode
• No secondary–breakdown
• Wide area of safe operation
• Simple bias circuitry
• No thermal runaway
Outline
2SK410
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to sourc

2SC4467 Datasheet (PDF)

1.1. 2sc4467.pdf Size:169K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC4467 NPN EPITAXIAL SILICON TRANSISTOR
SILICON NPN TRIPLE
DIFFUSED PLANAR
TRANSISTOR
? DESCRIPTION
The UTC 2SC4467 is a silicon NPN triple diffused planar
transistor, it uses UTC’s advanced technology to provide the
customers with high DC current gain and high collector-base
breakdown voltage, etc.
The UTC 2SC4467 is suitable for audio and gen

1.2. 2sc4467.pdf Size:192K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC4467
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1694
APPLICATIONS
·Audio and general purpose
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maximum ratings(Ta=?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO C

 1.3. 2sc4467.pdf Size:24K _sanken-ele

2SC4467
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)
Application : Audio and General Purpose
External Dimensions MT-100(TO3P)
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)
Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit
0.2
4.8
0.4
15.6
0.1
VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0
IEBO
VCEO 120 V VEB=6V 10max A
V(BR)C

1.4. 2sc4467.pdf Size:194K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC4467
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V = 120V(Min)
(BR)CEO
·Good Linearity of h
FE
·Complement to Type 2SA1694
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MA

2SK4107 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK4107

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 150
W

Предельно допустимое напряжение сток-исток (Uds): 500
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Максимально допустимый постоянный ток стока (Id): 15
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 48
nC

Время нарастания (tr): 50
ns

Выходная емкость (Cd): 220
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.4
Ohm

Тип корпуса: TO3P

2SK4107
Datasheet (PDF)

1.1. 2sk4107.pdf Size:239K _toshiba

 2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
○ Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance : RDS (ON) = 0. 33 Ω (typ.)
• High forward transfer admittance : |Yfs| = 8.5 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

4.1. 2sk4106.pdf Size:175K _toshiba

2SK4106
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4106
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absol

4.2. 2sk4105.pdf Size:199K _toshiba

2SK4105
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4105
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Abso

 4.3. 2sk4103.pdf Size:296K _toshiba

2SK4103
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4103
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.8S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximu

4.4. 2sk4104.pdf Size:206K _toshiba

2SK4104
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4104
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute M

 4.5. 2sk4108.pdf Size:281K _toshiba

2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance : RDS (ON) = 0. 21Ω (typ.)
High forward transfer admittance : |Yfs| = 14 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Max

4.6. 2sk4100ls.pdf Size:97K _sanyo

www.DataSheet4U.com
Ordering number : ENA0778 2SK4100LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4100LS
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guaran

4.7. 2sk4101ls.pdf Size:45K _sanyo

Ordering number : ENA0745 2SK4101LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4101LS
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.
Spec

4.8. 2sk410.pdf Size:50K _hitachi

2SK410
Silicon N-Channel MOS FET
Application
HF/VHF power amplifier
Features
• High breakdown voltage
• You can decrease handling current.
• Included gate protection diode
• No secondary–breakdown
• Wide area of safe operation
• Simple bias circuitry
• No thermal runaway
Outline
2SK410
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to sourc

Другие MOSFET… 2SK4019
, 2SK4020
, 2SK4021
, 2SK4022
, 2SK4103
, 2SK4104
, 2SK4105
, 2SK4106
, BUZ90
, 2SK4108
, 2SK4110
, 2SK4111
, 2SK4112
, 2SK4113
, 2SK4114
, TJ120F06J3
, TK07H90A
.

2SC4408 Datasheet (PDF)

1.1. 2sc4408.pdf Size:186K _toshiba



4.1. 2sc4409.pdf Size:150K _toshiba

2SC4409
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications
Unit: mm
Power switching applications
• Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A)
C
• High speed switching time: t = 500ns (typ.)
stg
• Small flat package
• P = 1~2 W (Mounted on ceramic substrate)
C
• Complementary to 2SA1681
Ma

4.2. 2sc4404.pdf Size:113K _sanyo

Ordering number:EN2757
NPN Epitaxial Planar Silicon Transistor
2SC4404
UHF Local Oscillator,
Wide-Band Amplifier Applications
Applications Package Dimensions
UHF OSC, wide-band amplifiers. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=5.0GHz typ
0.15
High power gain : MAG=14dB typ (f=0.9GHz)
3
Small noise figure : NF=2.2dB typ (f=0.9GHz)
0~0.1
Very

 4.3. 2sc4406.pdf Size:105K _sanyo

Ordering number:EN2759A
NPN Epitaxial Planar Silicon Transistor
2SC4406
VHF Frequency Mixer,
Local Oscillator Applications
Applications Package Dimensions
VHF mixer, frequency converters, local oscillators. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=1.2GHz typ
0.15
High power gain : PG=15dB typ (f=0.4GHz)
3
Good dependence of fT on current.
0~0.1

4.4. 2sc4405.pdf Size:112K _sanyo

Ordering number:EN2758
NPN Epitaxial Planar Silicon Transistor
2SC4405
UHF, Low-Noise,
Wide-Band Amplifier Applications
Applications Package Dimensions
UHF, low-noise amplifiers, wide-band amplifiers. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=5.0GHz typ
0.15
High power gain : MAG=14dB typ (f=0.9GHz)
3
Small noise figure : NF=1.5dB typ (f=0.9GHz)
0~0

 4.5. 2sc4407.pdf Size:105K _sanyo

Ordering number:EN2760
NPN Epitaxial Planar Silicon Transistor
2SC4407
VHF/UHF Mixer,
Local Oscillator Applications
Applications Package Dimensions
VHF/UHF mixers, frequency converters, local
unit:mm
oscillators.
2059B

0.3
Features
0.15
High cutoff frequency : fT=3.0GHz typ
3
High power gain : PG=12dB typ (f=0.9GHz)
0~0.1
Small noise figure : NF=3.0dB typ (f

4.6. 2sc4403.pdf Size:112K _sanyo

Ordering number:EN2756
NPN Epitaxial Planar Silicon Transistor
2SC4403
VHF/UHF Local Oscillator Applications
Applications Package Dimensions
VHF/UHF oscillators. unit:mm
2059B
Features
0.3
High cutoff frequency : fT=3.0GHz typ
0.15
High power gain : MAG=12dB typ (f=0.9GHz)
3
Small noise figure : NF=2.5dB typ (f=0.9GHz)
0~0.1
Very small-sized package permitti

4.7. 2sc4400.pdf Size:79K _sanyo

Ordering number:EN3195
NPN Epitaxial Planar Silicon Transistor
2SC4400
High-Frequency
General-Purpose Amplifier Applications
Features Package Dimensions
High power gain.
unit:mm
High cutoff frequency.
2059B
Small Cob, Cre.

Very small-sized package permitting the 2SC4400-
0.3
0.15
applied sets to be made small and slim.
3
0~0.1
1 2
0.3 0.6
0.65 0.65
0.9
2

4.8. 2sc4401.pdf Size:119K _sanyo

Ordering number:EN2754
NPN Epitaxial Planar Silicon Transistor
2SC4401
VHF/UHF Mixer, Local Oscillator,
Low-Voltage Amplifier Applications
Applications Package Dimensions
VHF/UHF MIX/OSC, low-voltage high-frequency
unit:mm
amplifiers.
2059B

0.3
Features
0.15
Low-voltage operation
3
: fT=3.0GHz typ (VCE=3V)
0~0.1
: MAG=11dB typ (VCE=3V, IC=3mA)
: NF=3.0dB typ (VCE

4.9. 2sc4402.pdf Size:120K _sanyo

Ordering number:EN2755
NPN Epitaxial Planar Silicon Transistor
2SC4402
VHF/UHF Mixer, Local Oscillator,
Low-Voltage Amplifier Applications
Applications Package Dimensions
VHF/UHF MIX/OSC, low-voltage high-frequency
unit:mm
amplifiers.
2059B

0.3
Features
0.15
Low-voltage operation
3
: fT=3.0GHz typ (VCE=3V)
0~0.1
: MAG=12dB typ (VCE=3V, IC=10mA)
: NF=1.5dB typ (VC

4.10. 2sc4409.pdf Size:1046K _kexin

SMD Type Transistors
NPN Transistors
2SC4409
1.70 0.1
■ Features
● Low collector saturation voltage
● High speed switching time
● Small flat package
0.42 0.1
0.46 0.1
● PC = 1~2 W (Mounted on a ceramic substrate)
● Complementary to 2SA1681
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage

2SC5148 Datasheet (PDF)

1.1. 2sc5148.pdf Size:205K _toshiba



1.2. 2sc5148.pdf Size:220K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5148
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for high resolution display,
color TV
·High speed switching applications
ABSOLUTE MAXIMUM RATINGS(T =25

 4.1. 2sc5147 3da5147.pdf Size:264K _update

2SC5147(3DA5147) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出及视频信号放大。
Purpose: Ideal for Color TV chroma output and amplification of video signals.
特点: 击穿电压高,集电极输出电容小,安全工作区宽。
Features: High breakdown voltage,low collector output capacitance,wide SOA.
极限参数/Absolute maxim

4.2. 2sc5144.pdf Size:206K _toshiba



 4.3. 2sc5143.pdf Size:191K _toshiba



4.4. 2sc5149.pdf Size:193K _toshiba



 4.5. 2sc5142.pdf Size:204K _toshiba



4.6. 2sc5147.pdf Size:51K _rohm

2SC5147
Transistors
Medium Power Transistor
(Chroma Output) (300V, 0.1A)
2SC5147
Features External dimensions (Units : mm)
1) High breakdown voltage. (BVCEO = 300V)
2) Low collector output capacitance.
10.0 4.5
(Typ.3pF at VCB = 30V)
3.2 2.8
?
3) Wide SOA. (safe operating area)
4) Ideal for color TV chroma output and amplification of
1.2
1.3
video signals.
0.8
0.75
2.54 2.54

4.7. 2sc5145.pdf Size:65K _panasonic

Power Transistors
2SC5145
Silicon NPN triple diffusion planar type
Unit: mm
8.5 0.2 3.4 0.3
For high breakdown voltage high-speed switching
6.0 0.5 1.0 0.1
Features
High-speed switching
High collector to base voltage VCBO
1.5max. 1.1max.
Wide area of safe operation (ASO)
N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.
the printed circuit board

4.8. 2sc5141.pdf Size:62K _hitachi

2SC5141
Silicon NPN Epitaxial
ADE-208-228A (Z)
2nd. Edition
Mar. 2001
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
fT = 5.8 GHz typ
High gain, low noise figure
PG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHz
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
Note: Marking is YN.
Attention: This device is very sensitive to electro static

4.9. 2sc5140.pdf Size:60K _hitachi

2SC5140
Silicon NPN Epitaxial
ADE-208-227A (Z)
2nd. Edition
Mar. 2001
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
fT = 9 GHz typ
High gain, low noise figure
PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
Note: Marking is YH.
Attention: This device is very sensitive to electro static d

4.10. 2sc5147.pdf Size:169K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5147
DESCRIPTION
·High breakdown voltage(BVceo=300V).
·Low collector output capacitance(Typ.3pF@Vce=30V).
·Wide SOA(safe operating area)
·Ideal for color TV chroma output and amplification
of video signals
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICAT

4.11. 2sc5144.pdf Size:211K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5144
DESCRIPTION
·High Switching Speed
·High Breakdown Voltage-
: V = 1700V(Min)
(BR)CBO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1700 V
CBO

4.12. 2sc5143.pdf Size:181K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5143
DESCRIPTION
·High Breakdown Voltage-
:V = 1700V (Min)
CBO
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for high resolution display&
colo

4.13. 2sc5149.pdf Size:220K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5149
DESCRIPTION
·High Breakdown Voltage
: V = 1500V (Min)
CBO
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for medium resolution display
color TV
·High speed switching applications
ABSOLUT

Поверка

осуществляется по документу МП 49297-12 «Измерители сопротивления заземления KEW 4106. Методика поверки», утвержденному ГЦИ СИ ФГУП «ВНИИМС» в феврале 2012 года.

Средства поверки: магазин электрического сопротивления Р4830/2 (± 0,05/2,5* 10-6), магазин электрического сопротивления Р4830/3 (± 0,05/2,5*10-7).

Сведения о методиках (методах) измерений приведены в руководстве по эксплуатации.

Нормативные и технические документы, устанавливающие требования к измерителям сопротивления заземления KEW 4106

1.    ГОСТ 14014-91 Приборы и преобразователи измерительные цифровые напряжения, тока, сопротивления. Общие технические требования и методы испытаний.

2.    ГОСТ 22261-94 Средства измерений электрических и магнитных величин. Общие технические условия.

3.    ГОСТ 8.028-86 ГСИ. Государственный первичный эталон и государственная поверочная схема для средств измерений электрического сопротивления.

4.    Приказ № 1034 от 09.09.2011 г. Министерства здравоохранения и социального развития.

5.    Техническая документация фирмы «Kyoritsu Electrical Instruments Works, Ltd.», Япония.

2SK4107 Datasheet (PDF)

1.1. 2sk4107.pdf Size:239K _toshiba

 2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
○ Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance : RDS (ON) = 0. 33 Ω (typ.)
• High forward transfer admittance : |Yfs| = 8.5 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

4.1. 2sk4106.pdf Size:175K _toshiba

2SK4106
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4106
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absol

4.2. 2sk4105.pdf Size:199K _toshiba

2SK4105
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4105
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Abso

 4.3. 2sk4103.pdf Size:296K _toshiba

2SK4103
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4103
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.8S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximu

4.4. 2sk4104.pdf Size:206K _toshiba

2SK4104
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4104
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute M

 4.5. 2sk4108.pdf Size:281K _toshiba

2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance : RDS (ON) = 0. 21Ω (typ.)
High forward transfer admittance : |Yfs| = 14 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Max

4.6. 2sk4100ls.pdf Size:97K _sanyo

www.DataSheet4U.com
Ordering number : ENA0778 2SK4100LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4100LS
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guaran

4.7. 2sk4101ls.pdf Size:45K _sanyo

Ordering number : ENA0745 2SK4101LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
2SK4101LS
Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.
Spec

4.8. 2sk410.pdf Size:50K _hitachi

2SK410
Silicon N-Channel MOS FET
Application
HF/VHF power amplifier
Features
• High breakdown voltage
• You can decrease handling current.
• Included gate protection diode
• No secondary–breakdown
• Wide area of safe operation
• Simple bias circuitry
• No thermal runaway
Outline
2SK410
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to sourc

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