Транзистор irf3205

IRF3205Z Datasheet (PDF)

1.1. irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Size:379K _upd

PD — 95129A
IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
Features
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
D
l 175°C Operating Temperature
VDSS = 55V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 6.5mΩ
l Lead-Free
G
Description
ID = 75A
S
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve e

1.2. auirf3205zstrl.pdf Size:330K _update-mosfet

PD — 97542
AUTOMOTIVE GRADE
AUIRF3205Z
AUIRF3205ZS
Features
● Advanced Process Technology
HEXFET Power MOSFET
● Ultra Low On-Resistance
● 175°C Operating Temperature D
V(BR)DSS
55V
● Fast Switching
RDS(on) max.
6.5mΩ
● Repetitive Avalanche Allowed up to
Tjmax
G
ID (Silicon Limited) 110A
● Lead-Free, RoHS Compliant
S
● Automotive Qualified *
ID (Package Li

 1.3. irf3205z.pdf Size:181K _international_rectifier

PD — 94653
AUTOMOTIVE MOSFET
IRF3205Z
HEXFET Power MOSFET
Features
D
? Advanced Process Technology
VDSS = 55V
? Ultra Low On-Resistance
? 175C Operating Temperature
RDS(on) = 6.5m?
? Fast Switching
G
? Repetitive Avalanche Allowed up to Tjmax
ID = 75A
S
Description
Specifically designed for Automotive applications, this HEXFET Power
MOSFET utilizes the latest processing techni

1.4. irf3205zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3205ZS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol

 1.5. irf3205z.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF3205Z,IIRF3205Z
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤6.5mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM

IRF3205ZS Datasheet (PDF)

1.1. irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Size:379K _upd

PD — 95129A
IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
Features
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
D
l 175°C Operating Temperature
VDSS = 55V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 6.5mΩ
l Lead-Free
G
Description
ID = 75A
S
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve e

1.2. auirf3205zstrl.pdf Size:330K _update-mosfet

PD — 97542
AUTOMOTIVE GRADE
AUIRF3205Z
AUIRF3205ZS
Features
● Advanced Process Technology
HEXFET Power MOSFET
● Ultra Low On-Resistance
● 175°C Operating Temperature D
V(BR)DSS
55V
● Fast Switching
RDS(on) max.
6.5mΩ
● Repetitive Avalanche Allowed up to
Tjmax
G
ID (Silicon Limited) 110A
● Lead-Free, RoHS Compliant
S
● Automotive Qualified *
ID (Package Li

 1.3. irf3205zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3205ZS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol

IRF3205ZS MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF3205ZS

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 170
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 110
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 76
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0065
Ohm

Тип корпуса: D2PAK

IRF3205ZS
Datasheet (PDF)

1.1. irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Size:379K _upd

PD — 95129A
IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
Features
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
D
l 175°C Operating Temperature
VDSS = 55V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 6.5mΩ
l Lead-Free
G
Description
ID = 75A
S
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve e

1.2. auirf3205zstrl.pdf Size:330K _update-mosfet

PD — 97542
AUTOMOTIVE GRADE
AUIRF3205Z
AUIRF3205ZS
Features
● Advanced Process Technology
HEXFET Power MOSFET
● Ultra Low On-Resistance
● 175°C Operating Temperature D
V(BR)DSS
55V
● Fast Switching
RDS(on) max.
6.5mΩ
● Repetitive Avalanche Allowed up to
Tjmax
G
ID (Silicon Limited) 110A
● Lead-Free, RoHS Compliant
S
● Automotive Qualified *
ID (Package Li

 1.3. irf3205zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3205ZS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol

Другие MOSFET… IRF2907ZL
, IRF2907ZS
, IRF2907ZS-7P
, IRF3007
, IRF3007L
, IRF3007S
, IRF3205Z
, IRF3205ZL
, IRF5210
, IRF3305
, IRF3515L
, IRF3610S
, IRF3703
, IRF3704Z
, IRF3704ZCS
, IRF3704ZL
, IRF3704ZS
.

IRF3205SPBF Datasheet (PDF)

1.1. irf3205lpbf irf3205spbf.pdf Size:280K _upd

PD — 95106
IRF3205SPbF
IRF3205LPbF
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
VDSS = 55V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 8.0mΩ
G
l Fully Avalanche Rated
l Lead-Free
ID = 110A…
S
Descriptiסn
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques t

2.1. irf3205s.pdf Size:160K _international_rectifier

PD — 94149
IRF3205S/L
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 55V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 8.0m?
G
Fast Switching
Fully Avalanche Rated
ID = 110A
S
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance

2.2. irf3205strlpbf.pdf Size:206K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF3205STRLPBF
·DESCRIPTION
·Drain Current I =110A@ T =25℃
D C
·Drain Source Voltage
: V = 55V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS .
·Designed for high current, high speed switching, switch
mode power supplies.
ABSOLUTE MAXIMU

 2.3. irf3205s.pdf Size:206K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF3205S
·DESCRIPTION
·Drain Current I =110A@ T =25℃
D C
·Drain Source Voltage
: V = 55V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS .
·Designed for high current, high speed switching, switch
mode power supplies.
ABSOLUTE MAXIMUM RATI

IRFI3205 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFI3205

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 48
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Максимально допустимый постоянный ток стока (Id): 56
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 113.3
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.008
Ohm

Тип корпуса: TO220

IRFI3205
Datasheet (PDF)

1.1. irfi3205.pdf Size:107K _international_rectifier

PD — 9.1374B
IRFI3205
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 55V
Isolated Package
High Voltage Isolation = 2.5KVRMS
RDS(on) = 0.008?
Sink to Lead Creepage Dist. = 4.8mm
G
Fully Avalanche Rated
ID = 64A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low

1.2. irfi3205pbf.pdf Size:277K _international_rectifier

PD — 95040A
IRFI3205PbF
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
l Isolated Package
VDSS = 55V
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
RDS(on) = 0.008Ω
G
l Fully Avalanche Rated
l Lead-Free
ID = 64A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techni

 1.3. irfi3205.pdf Size:201K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IRFI3205
·FEATURES
·With TO-220F package
·Low input capacitance and gate charge
·Low gate input resistance
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET… IRFF9110
, IRFF9120
, IRFF9130
, IRFF9210
, IRFF9220
, IRFF9230
, IRFI1010N
, IRFI1310N
, J310
, IRFI3710
, IRFI460
, IRFI4905
, IRFI510A
, IRFI520A
, IRFI520N
, IRFI5210
, IRFI530A
.

IRFI3205 Datasheet (PDF)

1.1. irfi3205.pdf Size:107K _international_rectifier

PD — 9.1374B
IRFI3205
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 55V
Isolated Package
High Voltage Isolation = 2.5KVRMS
RDS(on) = 0.008?
Sink to Lead Creepage Dist. = 4.8mm
G
Fully Avalanche Rated
ID = 64A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low

1.2. irfi3205pbf.pdf Size:277K _international_rectifier

PD — 95040A
IRFI3205PbF
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
l Isolated Package
VDSS = 55V
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
RDS(on) = 0.008Ω
G
l Fully Avalanche Rated
l Lead-Free
ID = 64A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techni

 1.3. irfi3205.pdf Size:201K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IRFI3205
·FEATURES
·With TO-220F package
·Low input capacitance and gate charge
·Low gate input resistance
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T

IRF3205ZPBF Datasheet (PDF)

1.1. irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Size:379K _upd

PD — 95129A
IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
Features
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
D
l 175°C Operating Temperature
VDSS = 55V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 6.5mΩ
l Lead-Free
G
Description
ID = 75A
S
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve e

2.1. auirf3205zstrl.pdf Size:330K _update-mosfet

PD — 97542
AUTOMOTIVE GRADE
AUIRF3205Z
AUIRF3205ZS
Features
● Advanced Process Technology
HEXFET Power MOSFET
● Ultra Low On-Resistance
● 175°C Operating Temperature D
V(BR)DSS
55V
● Fast Switching
RDS(on) max.
6.5mΩ
● Repetitive Avalanche Allowed up to
Tjmax
G
ID (Silicon Limited) 110A
● Lead-Free, RoHS Compliant
S
● Automotive Qualified *
ID (Package Li

2.2. irf3205z.pdf Size:181K _international_rectifier

PD — 94653
AUTOMOTIVE MOSFET
IRF3205Z
HEXFET Power MOSFET
Features
D
? Advanced Process Technology
VDSS = 55V
? Ultra Low On-Resistance
? 175C Operating Temperature
RDS(on) = 6.5m?
? Fast Switching
G
? Repetitive Avalanche Allowed up to Tjmax
ID = 75A
S
Description
Specifically designed for Automotive applications, this HEXFET Power
MOSFET utilizes the latest processing techni

 2.3. irf3205zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3205ZS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol

2.4. irf3205z.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF3205Z,IIRF3205Z
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤6.5mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM

IRF3205ZPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF3205ZPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 170
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 75
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 110
nC

Время нарастания (tr): 95
ns

Выходная емкость (Cd): 550
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0065
Ohm

Тип корпуса: TO220AB

IRF3205ZPBF
Datasheet (PDF)

1.1. irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Size:379K _upd

PD — 95129A
IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
Features
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
D
l 175°C Operating Temperature
VDSS = 55V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 6.5mΩ
l Lead-Free
G
Description
ID = 75A
S
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve e

2.1. auirf3205zstrl.pdf Size:330K _update-mosfet

PD — 97542
AUTOMOTIVE GRADE
AUIRF3205Z
AUIRF3205ZS
Features
● Advanced Process Technology
HEXFET Power MOSFET
● Ultra Low On-Resistance
● 175°C Operating Temperature D
V(BR)DSS
55V
● Fast Switching
RDS(on) max.
6.5mΩ
● Repetitive Avalanche Allowed up to
Tjmax
G
ID (Silicon Limited) 110A
● Lead-Free, RoHS Compliant
S
● Automotive Qualified *
ID (Package Li

2.2. irf3205z.pdf Size:181K _international_rectifier

PD — 94653
AUTOMOTIVE MOSFET
IRF3205Z
HEXFET Power MOSFET
Features
D
? Advanced Process Technology
VDSS = 55V
? Ultra Low On-Resistance
? 175C Operating Temperature
RDS(on) = 6.5m?
? Fast Switching
G
? Repetitive Avalanche Allowed up to Tjmax
ID = 75A
S
Description
Specifically designed for Automotive applications, this HEXFET Power
MOSFET utilizes the latest processing techni

 2.3. irf3205zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3205ZS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol

2.4. irf3205z.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF3205Z,IIRF3205Z
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤6.5mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM

Другие MOSFET… SMG2301
, SMG2301P
, SMG2302
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, IRF1404
, SMG2306NE
, SMG2310A
, SMG2310N
, SMG2314N
, SMG2314NE
, SMG2318N
, SMG2319P
, SMG2321P
.

IRF540N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF540N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 140
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 33
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 47.3
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.052
Ohm

Тип корпуса: TO220AB

IRF540N
Datasheet (PDF)

1.1. irf540npbf.pdf Size:242K _update-mosfet

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF540NPBF
·FEATURES
·Drain Current I = 33A@ T =25℃
D C
·Static Drain-Source On-Resistance
: R = 44mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switchi

1.2. irf540n.pdf Size:99K _international_rectifier

PD — 91341B
IRF540N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 44m?
G
Fast Switching
Fully Avalanche Rated
ID = 33A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per s

 1.3. irf540npbf.pdf Size:153K _international_rectifier

PD — 94812
IRF540NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 44mΩ
Fast Switching
G
Fully Avalanche Rated
ID = 33A
Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely l

1.4. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

 1.5. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

1.6. irf540n.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF540N,IIRF540N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.044Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

1.7. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.8. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) < 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour

Другие MOSFET… IRF530NL
, IRF530NS
, IRF531
, IRF532
, IRF533
, IRF540
, IRF540A
, IRF540FI
, IRFB3306
, IRF540NL
, IRF540NS
, IRF541
, IRF542
, IRF543
, IRF550A
, IRF610
, IRF610A
.

IRF540N Datasheet (PDF)

1.1. irf540npbf.pdf Size:242K _update-mosfet

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF540NPBF
·FEATURES
·Drain Current I = 33A@ T =25℃
D C
·Static Drain-Source On-Resistance
: R = 44mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switchi

1.2. irf540n.pdf Size:99K _international_rectifier

PD — 91341B
IRF540N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 44m?
G
Fast Switching
Fully Avalanche Rated
ID = 33A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per s

 1.3. irf540npbf.pdf Size:153K _international_rectifier

PD — 94812
IRF540NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 44mΩ
Fast Switching
G
Fully Avalanche Rated
ID = 33A
Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely l

1.4. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

 1.5. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

1.6. irf540n.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF540N,IIRF540N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.044Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

1.7. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.8. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) < 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour

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