Транзистор irf540

IRF540NS Datasheet (PDF)

1.1. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

1.2. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

 1.3. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate
input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.4. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) < 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour

IRF540NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF540NPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 130
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 33
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 71
nC

Время нарастания (tr): 35
ns

Выходная емкость (Cd): 250
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.044
Ohm

Тип корпуса: TO-220AB

IRF540NPBF
Datasheet (PDF)

1.1. irf540npbf.pdf Size:242K _update-mosfet

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF540NPBF
·FEATURES
·Drain Current I = 33A@ T =25℃
D C
·Static Drain-Source On-Resistance
: R = 44mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switchi

1.2. irf540npbf.pdf Size:153K _international_rectifier

PD — 94812
IRF540NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 44mΩ
Fast Switching
G
Fully Avalanche Rated
ID = 33A
Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely l

 3.1. irf540n.pdf Size:99K _international_rectifier

PD — 91341B
IRF540N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 44m?
G
Fast Switching
Fully Avalanche Rated
ID = 33A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per s

3.2. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

 3.3. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

3.4. irf540n.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF540N,IIRF540N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.044Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

 3.5. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

3.6. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) < 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour

Другие MOSFET… IRF5210SPBF
, IRF5305LPBF
, IRF5305PBF
, IRF5305SPBF
, IRF530NPBF
, IRF530NSPBF
, IRF530S
, IRF540NLPBF
, IRF640N
, IRF540NSPBF
, IRF540S
, IRF540SPBF
, IRF540ZLPBF
, IRF540ZPBF
, IRF540ZSPBF
, IRF5800
, IRF5801PBF-1
.

IRF540N Datasheet (PDF)

1.1. irf540npbf.pdf Size:242K _update-mosfet

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF540NPBF
·FEATURES
·Drain Current I = 33A@ T =25℃
D C
·Static Drain-Source On-Resistance
: R = 44mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switchi

1.2. irf540n.pdf Size:99K _international_rectifier

PD — 91341B
IRF540N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 44m?
G
Fast Switching
Fully Avalanche Rated
ID = 33A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per s

 1.3. irf540npbf.pdf Size:153K _international_rectifier

PD — 94812
IRF540NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 44mΩ
Fast Switching
G
Fully Avalanche Rated
ID = 33A
Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely l

1.4. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

 1.5. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

1.6. irf540n.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF540N,IIRF540N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.044Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

1.7. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.8. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) < 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour

IRF540Z MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF540Z

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 92
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 36
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 42
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0265
Ohm

Тип корпуса: TO220AB

IRF540Z
Datasheet (PDF)

1.1. auirf540zstrl.pdf Size:326K _update-mosfet

PD — 96326
AUTOMOTIVE GRADE
AUIRF540Z
AUIRF540ZS
Features
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance V(BR)DSS
100V
l 175°C Operating Temperature
RDS(on) typ.
21mΩ
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
max. 26.5mΩ
l Lead-Free, RoHS Compliant
ID
36A
l Automotive Qualified *
S
Description
Specifically designe

1.2. irf540zlpbf irf540zspbf.pdf Size:376K _international_rectifier

PD — 95531A
IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
Features
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 100V
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 26.5mΩ
G
Lead-Free
ID = 36A
Description
S
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremel

 1.3. irf540zpbf.pdf Size:302K _international_rectifier

PD — 94758
IRF540Z
AUTOMOTIVE MOSFET
IRF540ZS
IRF540ZL
Features
HEXFET Power MOSFET
● Advanced Process Technology
D
● Ultra Low On-Resistance
VDSS = 100V
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 26.5mΩ
G
Description
ID = 36A
Specifically designed for Automotive applications,
S
this HEXFET Power MOSFE

1.4. irf540z.pdf Size:173K _international_rectifier

PD — 94644
IRF540Z
AUTOMOTIVE MOSFET
HEXFET Power MOSFET
Features
D
Advanced Process Technology
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
RDS(on) = 29.5m?
175C Operating Temperature
G
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
ID = 34A
S
Description
Specifically designed for Automotive applications, this HEXFET Power
MOSFET utilizes the lates

 1.5. irf540zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540ZS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.6. irf540z.pdf Size:251K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF540Z,IIRF540Z
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.0265Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM

Другие MOSFET… IRF3805L
, IRF3805S
, IRF3805S-7P
, IRF3808
, IRF3808S
, IRF4104
, IRF4104G
, IRF4104S
, BS170
, IRF540ZL
, IRF540ZS
, IRF5801
, IRF5802
, IRF6201
, IRF630N
, IRF630NL
, IRF630NS
.

IRL540N Datasheet (PDF)

1.1. irl540nspbf.pdf Size:914K _upd

PD- 95234
IRL540NS/LPbF
• Lead-Free
www.irf.com 1
05/04/04
IRL540NS/LPbF
2 www.irf.com
IRL540NS/LPbF
www.irf.com 3
IRL540NS/LPbF
4 www.irf.com
IRL540NS/LPbF
www.irf.com 5
IRL540NS/LPbF
6 www.irf.com
IRL540NS/LPbF
www.irf.com 7
IRL540NS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR

1.2. irl540npbf.pdf Size:1046K _upd

PD — 94997
IRL540NPbF
HEXFET Power MOSFET
• Lead-Free
www.irf.com 1
2/10/04
IRL540NPbF
2 www.irf.com
IRL540NPbF
www.irf.com 3
IRL540NPbF
4 www.irf.com
IRL540NPbF
www.irf.com 5
IRL540NPbF
6 www.irf.com
IRL540NPbF
www.irf.com 7
IRL540NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) — B —
3.78 (.149)
10.29 (.405)
2.87 (.113) 4

 1.3. irl540n.pdf Size:132K _international_rectifier

PD — 91495A
IRL540N
HEXFET Power MOSFET
Logic-Level Gate Drive
D
Advanced Process Technology
VDSS = 100V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.044?
Fast Switching G
Fully Avalanche Rated
ID = 36A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon

1.4. irl540ns.pdf Size:182K _international_rectifier

PD -91535
IRL540NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRL540NS)
VDSS = 100V
Low-profile through-hole (IRL540NL)
175C Operating Temperature
RDS(on) = 0.044?
Fast Switching
G
Fully Avalanche Rated
ID = 36A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-res

 1.5. irl540n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRL540N,IIRL540N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.044Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

1.6. irl540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRL540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

IRF540NPBF Datasheet (PDF)

1.1. irf540npbf.pdf Size:242K _update-mosfet

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor IRF540NPBF
·FEATURES
·Drain Current I = 33A@ T =25℃
D C
·Static Drain-Source On-Resistance
: R = 44mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switchi

1.2. irf540npbf.pdf Size:153K _international_rectifier

PD — 94812
IRF540NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 44mΩ
Fast Switching
G
Fully Avalanche Rated
ID = 33A
Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely l

 3.1. irf540n.pdf Size:99K _international_rectifier

PD — 91341B
IRF540N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 44m?
G
Fast Switching
Fully Avalanche Rated
ID = 33A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per s

3.2. irf540nlpbf irf540nspbf.pdf Size:279K _international_rectifier

PD — 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature
VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 44mΩ
l Lead-Free
G
Description
Advanced HEXFET Power MOSFETs from ID = 33A
International Rectifier utilize advanced processing S
techniques to achi

 3.3. irf540ns.pdf Size:125K _international_rectifier

PD — 91342
IRF540NS
IRF540NL
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175C Operating Temperature VDSS = 100V
Fast Switching
Fully Avalanche Rated
RDS(on) = 44m?
Description G
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing ID = 33A
S
techniques to achieve extremely low on-resistanc

3.4. irf540n.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF540N,IIRF540N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.044Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

 3.5. irf540ns.pdf Size:257K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

3.6. irf540ns.pdf Size:2432K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF540NS (KRF540NS)
TO-263
Unit:mm
9.65 (Min)
10.67 (Max)
■ Features
5.33 (Min)
● VDS (V) = 100V

90 ~ 93
● ID = 33 A (VGS = 10V)
● RDS(ON) < 44mΩ (VGS = 10V)
6.22 (min)
● Fast Switching 4.06 (Min)
4.83 (Max)
1.14 (Min)
1.40 (Max)
1.65 (max)
D
1.27~1.78
1.14~1.40
0.43~0.63
G 1 Gate
0.51~0.99
2 Drain
2.54
3 Sour

IRF540Z Datasheet (PDF)

1.1. auirf540zstrl.pdf Size:326K _update-mosfet

PD — 96326
AUTOMOTIVE GRADE
AUIRF540Z
AUIRF540ZS
Features
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance V(BR)DSS
100V
l 175°C Operating Temperature
RDS(on) typ.
21mΩ
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
max. 26.5mΩ
l Lead-Free, RoHS Compliant
ID
36A
l Automotive Qualified *
S
Description
Specifically designe

1.2. irf540zlpbf irf540zspbf.pdf Size:376K _international_rectifier

PD — 95531A
IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
Features
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 100V
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 26.5mΩ
G
Lead-Free
ID = 36A
Description
S
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremel

 1.3. irf540zpbf.pdf Size:302K _international_rectifier

PD — 94758
IRF540Z
AUTOMOTIVE MOSFET
IRF540ZS
IRF540ZL
Features
HEXFET Power MOSFET
● Advanced Process Technology
D
● Ultra Low On-Resistance
VDSS = 100V
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 26.5mΩ
G
Description
ID = 36A
Specifically designed for Automotive applications,
S
this HEXFET Power MOSFE

1.4. irf540z.pdf Size:173K _international_rectifier

PD — 94644
IRF540Z
AUTOMOTIVE MOSFET
HEXFET Power MOSFET
Features
D
Advanced Process Technology
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
RDS(on) = 29.5m?
175C Operating Temperature
G
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
ID = 34A
S
Description
Specifically designed for Automotive applications, this HEXFET Power
MOSFET utilizes the lates

 1.5. irf540zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF540ZS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.6. irf540z.pdf Size:251K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF540Z,IIRF540Z
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.0265Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM

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