Byv26c

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of February 1994
1996 May 30

Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYV26 series
FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• Available in ammo-pack.

DESCRIPTION
This package is hermetically sealed
and fatigue free as coefficients of

Rugged glass SOD57 package, using expansion of all used parts are

a high temperature alloyed
matched.
construction.

2/3 pagek(Datasheet)

a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS

VRRM

VR

IF(AV)

IF(AV)

IFRM

repetitive peak reverse voltage
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
continuous reverse voltage
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
average forward current
BYV26A to E
BYV26F and G
average forward current
BYV26A to E
BYV26F and G
repetitive peak forward current
BYV26A to E
BYV26F and G

Ttp = 85 °C; lead length = 10 mm;

see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11

Tamb = 60 °C; PCB mounting (see

Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11

Ttp = 85 °C; see Figs 6 and 7

MIN. MAX. UNIT

− 200 V

− 400 V

− 600 V

− 800 V

− 1000 V

− 1200 V

− 1400 V

− 200 V

− 400 V

− 600 V

− 800 V

− 1000 V

− 1200 V

− 1400 V

− 1.00 A

− 1.05 A

− 0.65 A

− 0.68 A

− 10.0 A

− 9.6 A

1996 May 30
2

Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYV26 series
SYMBOL
PARAMETER
CONDITIONS

IFRM

repetitive peak forward current

Tamb = 60 °C; see Figs 8 and 9

BYV26A to E
BYV26F and G

IFSM

ERSM

non-repetitive peak forward current
non-repetitive peak reverse
avalanche energy

t = 10 ms half sine wave; Tj = Tj max

prior to surge; VR = VRRMmax

IR = 400 mA; Tj = Tj max prior to

surge; inductive load switched off

Tstg storage temperature

Tj junction temperature

see Figs 12 and 13
MIN. MAX. UNIT

− 6.0 A

− 6.4 A

− 30 A

− 10 mJ

−65 +175 °C

−65 +175 °C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL
PARAMETER

VF

VF

V(BR)R

IR

forward voltage
BYV26A to E
BYV26F and G
forward voltage
BYV26A to E
BYV26F and G
reverse avalanche breakdown
voltage
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
reverse current

trr reverse recovery time

BYV26A to C
BYV26D and E
BYV26F and G

Cd diode capacitance

BYV26A to C
BYV26D and E
BYV26F and G
CONDITIONS

IF = 1 A; Tj = Tj max;

see Figs 14 and 15

IF = 1 A;

see Figs 14 and 15

IR = 0.1 mA

VR = VRRMmax; see Fig.16

VR = VRRMmax;

Tj = 165 °C; see Fig.16

when switched from

IF = 0.5 A to IR = 1 A;

measured at IR = 0.25 A;

see Fig.20

f = 1 MHz; VR = 0 V;

see Figs 17 and 18
MIN.
−
−
−
−
300
500
700
900
1 100
1 300
1 500
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
45
40
35
MAX. UNIT
1.3 V
1.3 V
2.50 V
2.15 V

−V

−V

−V

−V

−V

−V

−V

5 µA

150 µA

30 ns
75 ns
150 ns

− pF

− pF

− pF

1996 May 30
3