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ES1F — ES1J
Fast Rectifiers
Features
• For surface mount applications.
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
• Superfast recovery times for high efficiency.
July 2007
SMA(DO-214AC)
Color Band Denotes Cathode
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
ES1F ES1G ES1H
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave (JEDEC method)
300 400 500
1.0
30
TJ
TSTG
PD
Junction Temperature
Storage Temperature Range
Power Dissipation
150
-55 to 150
1.47
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
ES1J
600
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient *
RθJL
Thermal Resistance, Junction to Lead *
* P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area.
Value
85
35
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
VF Maximum Forward Voltage @ IF = 1.0 A
Trr
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
IR
Maximum Reverse Current @ rated VR TA = 25°C
TA = 100°C
Cj
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
Value
1.3
35
5.0
100
10.0
1.7
8.0
Units
V
A
A
°C
°C
W
Units
°C/W
°C/W
Units
V
ns
uA
pF
2007 Fairchild Semiconductor Corporation
ES1F — ES1J Rev. A
1
www.fairchildsemi.com
Typical Performance Characteristics
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.2
1.0
RESISTIVE OR
0.8 INDUCTIVE LOAD
0.2X0.2″(5.0X5.0mm)
COPPER PAD AREAS
0.6
0.4
0.2
80 90 100 110 120 130
LEAD TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
10
10
Tj=25C
PULSE WIDTH-300 S
1% DUTY CYCLE
T=25 oC
j
PULSE WIDTH 300uS
1% DUTY CYCLE
140 150
1
1
0.1
0.1
ES1F-1G
ES1H-1J
0.01
0.4
0.01
0.4
0.6
0.6
0.8 1.0 1.2 1.4
0.8 1.0 1.2 1.4
FORWARD VOLTAGE. (V)
1.6
1.6
1.8
1.8
FIG.5- TYPICAL JUNCTION CAPACITANCE
14
Tj=25C
12 f=1.0MHz
Vsig=50mVp-p
10 ES1F — G
8.0 ES1H — J
6.0
4.0
2.0
1 10
REVERSE VOLTAGE. (V)
100
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
8.3ms Single Half Sine Wave
25 (JEDEC Method) at TL=120oC
20
15
10
5.0
1 10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
100
100
Tj=125C
10
Tj=85C
1
Tj=25C
0.1
0.01
20 40
60 80 100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
140
2 www.fairchildsemi.com
ES1F — ES1J Rev. A
Package Dimensions
SMA / DO — 214AC
Dimensions in Millimeters
3 www.fairchildsemi.com
ES1F — ES1J Rev. A
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