Даташит bat54s pdf ( datasheet )

BAT54, A, C, S

SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
SURFACE MOUNT DEVICE
DESCRIPTION
Schottky barrier diodes encapsulated in a SOT-23
small SMD packages.
Double diodes with different pining are available.
A
K
Nc
A
BAT54
K
A1
K

A1 K

A2
A2
BAT54C
K1
A

K1 A

K2
K2
BAT54A
A2
A1

K2 A1

K1 K2

A2 K1

BAT54S
SOT-23

ABSOLUTE RATINGS (limiting values)

Symbol
Parameter

VRRM Repetitive peak reverse voltage

IF Continuous forward current

IFSM Surge non repetitive forward current

tp=10ms sinusoidal

Ptot Power dissipation (note 1)

Tamb = 25°C

Tstg Maximum storage temperature range

Tj Maximum operating junction temperature *

TL Maximum temperature for soldering during 10s

Note 1: for double diodes, Ptot is the total dissipation of both diodes.

Value
30
0.3
1
250
— 65 to +150
150
260
*

dPtot
dTj
<
1

Rth(j−a)

thermal
runaway condition for a diode on its own heatsink
Unit
V
A
A
mW

°C

°C

°C

June 1999 — Ed: 3A
1/5

BAT54, A, C, S
THERMAL RESISTANCE
Symbol
Parameter

Rth (j-a) Junction to ambient (*)

(*) Mounted on epoxy board with recommended pad layout.
Value
500
Unit

°C/W

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol
Parameters

VF * Forward voltage drop

IR ** Reverse leakage current

Pulse test : * tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

Tests conditions

Tj = 25°C

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

IF = 30 mA

IF = 100 mA

Tj = 25°C

VR = 30 V

Tj = 100°C

Min.
Typ. Max.
240
320
400
500
900
1
100
Unit
mV

µA

DYNAMIC CHARACTERISTICS (Tj = 25 °C)

Symbol Parameters
C Junction
capacitance

trr Reverse recovery

time
Tests conditions

Tj = 25°C VR = 1 V F = 1 MHz

IF = 10 mA IR = 10 mA Tj = 25°C

Irr = 1 mA RL = 100 Ω

Min.
Typ. Max. Unit
10 pF
5 ns

Fig.1 : Average forward power dissipation versus

average forward current.
PF(av)(W)
0.35
0.30
δ = 0.05
0.25
0.20
0.15
0.10
0.05
0.00
0.00 0.05

δ = 0.1 δ = 0.2

δ = 0.5
IF(av) (A)
0.10 0.15 0.20
δ=1
T

δ=tp/T

0.25
tp
0.30

Fig.2 : Average forward current versus ambient

temperature ( δ = 1).

IF(av)(A)
0.35
0.30
0.25
0.20
0.15
0.10
T
0.05

δ=tp/T

tp
Tamb(°C)
0.00
0 25 50 75 100 125 150
2/5

Fig.3 : Non repetitive surge peak forward current

versus overload duration (maximum values).
BAT54, A, C, S

Fig.4 : Relative variation of thermal impedance

junction to ambient versus pulse duration (alumine
substrate 10mm x 8mm x 0.5mm).
IM(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4

0.3 IM

0.2
0.1
0.0
1E-3
t

δ=0.5

1E-2
t(s)
1E-1
Ta=25°C
Ta=50°C
Ta=100°C
1E+0
Zth(j-a)/Rth(j-a)
1.00

δ = 0.5

δ = 0.2

0.10

δ = 0.1

0.01
1E-3
Single pulse
1E-2
tp(s)
1E-1 1E+0
T

δ=tp/T

1E+1
tp
1E+2

Fig.5 : Reverse leakage current versus reverse

voltage applied (typical values).
IR(µA)
1E+2
1E+1
Tj=100°C
1E+0
1E-1
1E-2

Tj=50°C
Tj=25°C
VR(V)
5 10 15 20 25 30

Fig.6 : Reverse leakage current versus junction

temperature.
IR(µA)
1E+4
VR=30V
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2

Tj(°C)
25 50 75 100 125 150

Fig.7 : Junction capacitance versus reverse

voltage applied (typical values).
C(pF)
10
5
F=1MHz
Tj=25°C
2
1
12
VR(V)
5
10
20 30

Fig.8 : Forward voltage drop versus forward

current (typical values).
IFM(A)
5E-1
1E-1
Tj=100°C
1E-2
Tj=50°C
1E-3
Tj=25°C
VFM(V)
1E-4
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
3/5