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STPS2045CT/CF/CG/CFP

POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS

IF(AV)

VRRM

Tj (max)

VF (max)

2 x 10 A
45 V
175 °C
0.57 V
A1
K
A2
FEATURES AND BENEFITS

s VERY SMALL CONDUCTION LOSSES

s NEGLIGIBLE SWITCHING LOSSES

s EXTREMELY FAST SWITCHING

s INSULATED PACKAGE: ISOWATT220AB,

TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12pF
DESCRIPTION
Dual center tap Schottky rectifier suited for
SwitchMode Power Supply and high frequency DC
to DC converters.
Packaged either in TO-220AB, ISOWATT220AB,

TO-220FPAB or D2PAK, this device is especially

intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
A2
K
A1
TO-220AB
STPS2045CT
K
A2
K
A1
ISOWATT220AB
STPS2045CF
A2
A1

D2PAK

STPS2045CG
A2
K
A1
TO-220FPAB
STPS2045CFP

ABSOLUTE RATINGS (limiting values, per diode)

Symbol
Parameter
Value Unit

VRRM

IF(RMS)

IF(AV)

Repetitive peak reverse voltage
RMS forward current

Average forward TO-220AB / D2PAK

current δ = 0.5

ISOWATT220AB
TO-220FPAB
Tc = 155°C Per diode
Tc = 125°C Per device
45
30
10
20
V
A
A

IFSM

IRRM

Surge non repetitive forward current
Repetitive peak reverse current
tp = 10 ms sinusoidal

tp = 2 µs square

F = 1kHz
180 A
1A

IRSM

Tstg
Non repetitive peak reverse current
Storage temperature range
tp = 100 ms square
2A

-65 to +175 °C

Tj Maximum operating junction temperature *
175 °C
dV/dt Critical rate of rise of reverse voltage

10000 V/µs

* : dPtot <

1 thermal runaway condition for a diode on its own heatsink

dTj Rth( j − a)

August 2002 — Ed: 3E
1/7

STPS2045CT/CF/CG/CFP
THERMAL RESISTANCES
Symbol

Rth (j-c) Junction to case

Parameter

TO-220AB / D2PAK

Rth (c)

ISOWATT220AB
TO-220FPAB

TO-220AB / D2PAK

ISOWATT220AB
TO-220FPAB
When the diodes 1 and 2 are used simultaneously:

∆ Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)

STATIC ELECTRICAL CHARACTERISTICS (Per diode)

Value Unit

Per diode 2.2 °C/W

Total
1.3
Per diode
Total
4.5
3.5
Coupling 0.3
2.5
Symbol
Parameter

IR * Reverse leakage current

VF * Forward voltage drop

Tests Conditions
Tj = 25°C

VR = VRRM

Tj = 125°C

Tj = 125°C IF = 10 A

Tj = 25°C

IF = 20 A

Tj = 125°C IF = 20 A

Min. Typ. Max.
100
7 15
0.5 0.57
0.84
0.65 0.72
Unit

µA

mA
V

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation :

P = 0.42 x IF(AV) + 0.015 IF2(RMS)

2/7

Fig. 1: Average forward power dissipation versus

average forward current (per diode).
STPS2045CT/CF/CG/CFP

Fig. 2: Average current versus ambient

temperature (δ=0.5, per diode).

PF(av)(W)
8

δ = 0.1 δ = 0.2

7 δ = 0.05

6
5
4
3
2

1 IF(av) (A)

01234567

δ = 0.5

δ=1

T

δ=tp/T

tp
8 9 10 11 12
IF(av)(A)
12
10
8
6
4
T
2

δ=tp/T

0 25
tp
50
Rth(j-a)=Rth(j-c)
ISOWATT220AB
TO-220FPAB
Rth(j-a)=15°C/W
TO-220AB
D²PAK
Tamb(°C)
75 100 125 150 175

Fig. 3-1: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (TO-220AB and D2PAK).

Fig. 3-2: Non repetitive surge peak forward current

versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
IM(A)
140
120
100
80
60
40

IM

20

1E-3
t

δ=0.5 t(s)

1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
IM(A)
100
80
60
40

IM

20
t

δ=0.5

t(s)

1E-3
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0

Fig. 4-1: Relative variation of thermal transient

impedance junction to case versus pulse duration

(TO-220AB and D2PAK).

Fig. 4-2: Relative variation of thermal transient

impedance junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8

0.6 δ = 0.5

0.4

0.2 δ = 0.2

δ = 0.1

Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T

δ=tp/T

1E-1
tp
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8

0.6 δ = 0.5

0.4

0.2 δ = 0.2

δ = 0.1

Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T

δ=tp/T

1E+0
tp
1E+1
3/7