Даташит s20c40 pdf ( datasheet )
Содержание:
- S20C45 Datasheet Download — Mospec Semiconductor
- S20C40CE Datasheet Download — Mospec Semiconductor
- S30D40C Datasheet Download — Won-Top Electronics
- Основные диоды Шоттки, которые встречаются в блоках питания
- SIF10N40C Datasheet (PDF)
- S20C40 Datasheet Download — Mospec Semiconductor
- S30D45C Datasheet Download — Won-Top Electronics
- SIF10N40C MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
- SIF10N40C Datasheet (PDF)
- S20C45CE Datasheet Download — Mospec Semiconductor
S20C45 Datasheet Download — Mospec Semiconductor
Номер произв | S20C45 | ||
Описание | SCHOTTKY BARRIER RECTIFIERS | ||
Производители | Mospec Semiconductor | ||
логотип | |||
1Page
MOSPEC VRRM VRWM VR 30 VR(RMS) 21 Average Rectifier Forward Current ( Per diode ) Total Device (Rated VR), TC=125 IF(AV) Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge IFM IFSM Operating and Storage Junction Temperature TJ , Tstg S20C Rθjc Rθ c 3.8 ( IF =10 Amp TC = 25 ) ( IF =10 Amp TC = 100 ) Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25 ) ( Rated DC Voltage, TC = 100 ) Symbol VF 0.55 0.70 V 0.48 0.60 IR 0.5 mA 20
S20C30 Thru S20C60 Tj=100oc Tj=75oc Tj=25oc PERCENT OF RATED REVERSE VOLTAGE ( ) TJ=125 S20C50-60 TJ=125 S20C30-45 TJ=25 S20C50-60 TJ=25 S20C30-45 |
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Всего страниц | 2 Pages | ||
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S20C40CE Datasheet Download — Mospec Semiconductor
Номер произв | S20C40CE | ||
Описание | (S20C30CE — S20C60CE) Schottky Barrier Rectifiers | ||
Производители | Mospec Semiconductor | ||
логотип | |||
1Page
MOSPEC VRRM VRWM 30 35 40 45 50 60 VR V VR(RMS) 21 25 28 32 35 42 V Total Device (Rated VR), TC=100 IF(AV) 10 (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current IFM IFSM 20 TJ , Tstg -65 to +150 ( IF =10 Amp TC = 25 ) ( IF =10 Amp TC = 125 ) VF 0.57 ( Rated DC Voltage, TC = 25 ) ( Rated DC Voltage, TC = 125 ) IR 0.5 mA DIM MILLIMETERS MIN MAX
S20C30CE Thru S20C60CE |
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Всего страниц | 2 Pages | ||
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S30D40C Datasheet Download — Won-Top Electronics
Номер произв | S30D40C | |||
Описание | (S30D30C — S30D60C) 30A DUAL SCHOTTKY BARRIER RECTIFIER | |||
Производители | Won-Top Electronics | |||
логотип | ||||
1Page
WTE S30D30C – S30D60C Pb 30A DUAL SCHOTTKY BARRIER RECTIFIER ! Schottky Barrier Chip ! Guard Ring for Transient Protection ! Low Forward Voltage Drop ! Low Reverse Leakage Current ! High Surge Current Capability ! Plastic Material has UL Flammability S L H ! Case: TO-3P, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-750, Method 2026 ! Polarity: See Diagram ! Weight: 5.6 grams (approx.) ! Mounting Position: Any ! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max. ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 A 3.20 3.50 B 4.70 5.30 C — 23.00 D 19.00 — E 2.80 3.20 G 0.45 0.85 H — 16.20 J 1.70 2.70 L— 4.50 M 5.25 5.65 N 1.10 1.40 P— 2.50 R 11.70 12.70 S 5.00 6.00 Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. VRRM VRWM 30 VR S30D VR(RMS) 21 @TC = 95°C Non-Repetitive Peak Forward Surge Current 8.3ms IO IFSM 30 @IF = 15A Peak Reverse Current @TA = 25°C @TA = 100°C Typical Junction Capacitance (Note 1) VFM IRM Cj 0.55 RJC 1.4 Tj, TSTG -65 to +150
30
24 300 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Derating Curve S30D30C — S30D45C 10 S30D50C — S30D60C 1.0 Tj = 25°C Pulse width = 300 µs VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics per Element Tj = 25°C f = 1MHz 1 10 100 www.DataSheet4U.com NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance per Element TC = 100°C 10 TC = 75°C 1.0 TC = 25°C 0.1
MARKING INFORMATION Note: 1. Anti-static tube, water clear color. RECOMMENDED SCREW MOUNTING ARRANGEMENT |
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Всего страниц | 4 Pages | |||
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Основные диоды Шоттки, которые встречаются в блоках питания
Шоттки TO-220 SBL2040CT 10A x 2 =20A 40V Vf=0.6V при 10AШоттки TO-247 S30D40 15A x 2 =30A 40V Vf=0.55V при 15AУльтрафаст TO-220 SF1004G 5A x 2 =10A 200V Vf=0.97V при 5AУльтрафаст TO-220 F16C20C 8A x 2 =16A 200V Vf=1.3V при 8AУльтрафаст SR504 5A 40V Vf=0.57Шоттки TO-247 40CPQ060 20A x 2 =40A 60V Vf=0.49V при 20AШоттки TO-247 STPS40L45C 20A x 2 =40A 45V Vf=0.49VУльтрафаст TO-247 SBL4040PT 20A x 2 =40A 45V Vf=0.58V при 20AШоттки TO-220 63CTQ100 30A x 2 =60A 100 Vf=0.69V при 30AШоттки TO-220 MBR2545CT 15A x 2 =30A 45V Vf=0.65V при 15AШоттки TO-247 S60D40 30A x 2 =60A 40-60V Vf=0.65V при 30AШоттки TO-247 30CPQ150 15A x 2 =30A 150V Vf=1V при 15AШоттки TO-220 MBRP3045N 15A x 2 =30A 45V Vf=0.65V при 15AШоттки TO-220 S20C60 10A x 2 =20A 30-60V Vf=0.55V при 10AШоттки TO-247 SBL3040PT 15A x 2 =30A 30-40V Vf=0.55V при 15AШоттки TO-247 SBL4040PT 20A x 2 =40A 30-40V Vf=0.58V при 20AУльтрафаст TO-220 U20C20C 10A x 2 =20A 50-200V Vf=0.97V при 10A
Существуют и современные отечественные диодные сборки на большой ток. Вот их маркировка и внутренняя схема:
Также выпускаются высоковольтные диоды Шоттки, которые можно использовать например в БП ламповых усилителей и другой аппаратуры с повышенным питанием. Список приведён ниже:
Хотя более предпочтительным является применение диодов Шоттки в низковольтных мощных выпрямителях с выходными напряжениями в пару десятков вольт, на высоких частотах переключения.
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SIF10N40C Datasheet (PDF)
1.1. sif10n40c.pdf Size:375K _sisemi
深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF10N40C
N- MOS / N-CHANNEL POWER MOSFET SIF10N40C
4.1. sif10n70c.pdf Size:291K _sisemi
深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N70C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N70C
4.2. sif10n60c.pdf Size:329K _sisemi
深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N60C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N60C
4.3. sif10n65c.pdf Size:291K _sisemi
深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N65C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N65C
S20C40 Datasheet Download — Mospec Semiconductor
Номер произв | S20C40 | ||
Описание | SCHOTTKY BARRIER RECTIFIERS | ||
Производители | Mospec Semiconductor | ||
логотип | |||
1Page
MOSPEC VRRM VRWM VR 30 VR(RMS) 21 Average Rectifier Forward Current ( Per diode ) Total Device (Rated VR), TC=125 IF(AV) Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge IFM IFSM Operating and Storage Junction Temperature TJ , Tstg S20C Rθjc Rθ c 3.8 ( IF =10 Amp TC = 25 ) ( IF =10 Amp TC = 100 ) Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25 ) ( Rated DC Voltage, TC = 100 ) Symbol VF 0.55 0.70 V 0.48 0.60 IR 0.5 mA 20
S20C30 Thru S20C60 Tj=100oc Tj=75oc Tj=25oc PERCENT OF RATED REVERSE VOLTAGE ( ) TJ=125 S20C50-60 TJ=125 S20C30-45 TJ=25 S20C50-60 TJ=25 S20C30-45 |
|||
Всего страниц | 2 Pages | ||
Скачать PDF |
S30D45C Datasheet Download — Won-Top Electronics
Номер произв | S30D45C | |||
Описание | (S30D30C — S30D60C) 30A DUAL SCHOTTKY BARRIER RECTIFIER | |||
Производители | Won-Top Electronics | |||
логотип | ||||
1Page
WTE S30D30C – S30D60C Pb 30A DUAL SCHOTTKY BARRIER RECTIFIER ! Schottky Barrier Chip ! Guard Ring for Transient Protection ! Low Forward Voltage Drop ! Low Reverse Leakage Current ! High Surge Current Capability ! Plastic Material has UL Flammability S L H ! Case: TO-3P, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-750, Method 2026 ! Polarity: See Diagram ! Weight: 5.6 grams (approx.) ! Mounting Position: Any ! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max. ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 A 3.20 3.50 B 4.70 5.30 C — 23.00 D 19.00 — E 2.80 3.20 G 0.45 0.85 H — 16.20 J 1.70 2.70 L— 4.50 M 5.25 5.65 N 1.10 1.40 P— 2.50 R 11.70 12.70 S 5.00 6.00 Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. VRRM VRWM 30 VR S30D VR(RMS) 21 @TC = 95°C Non-Repetitive Peak Forward Surge Current 8.3ms IO IFSM 30 @IF = 15A Peak Reverse Current @TA = 25°C @TA = 100°C Typical Junction Capacitance (Note 1) VFM IRM Cj 0.55 RJC 1.4 Tj, TSTG -65 to +150
30
24 300 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Derating Curve S30D30C — S30D45C 10 S30D50C — S30D60C 1.0 Tj = 25°C Pulse width = 300 µs VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics per Element Tj = 25°C f = 1MHz 1 10 100 www.DataSheet4U.com NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance per Element TC = 100°C 10 TC = 75°C 1.0 TC = 25°C 0.1
MARKING INFORMATION Note: 1. Anti-static tube, water clear color. RECOMMENDED SCREW MOUNTING ARRANGEMENT |
||||
Всего страниц | 4 Pages | |||
Скачать PDF |
SIF10N40C MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIF10N40C
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 140
W
Предельно допустимое напряжение сток-исток (Uds): 400
V
Предельно допустимое напряжение затвор-исток (Ugs): 20
V
Максимально допустимый постоянный ток стока (Id): 10
A
Максимальная температура канала (Tj): 150
°C
Сопротивление сток-исток открытого транзистора (Rds): 0.48
Ohm
Тип корпуса: TO-220, TO-220FP, TO-262, TO-263
SIF10N40C
Datasheet (PDF)
1.1. sif10n40c.pdf Size:375K _sisemi
深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF10N40C
N- MOS / N-CHANNEL POWER MOSFET SIF10N40C
4.1. sif10n70c.pdf Size:291K _sisemi
深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N70C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N70C
4.2. sif10n60c.pdf Size:329K _sisemi
深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N60C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N60C
4.3. sif10n65c.pdf Size:291K _sisemi
深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N65C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N65C
Другие MOSFET… SMG2301
, SMG2301P
, SMG2302
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, IRF1404
, SMG2306NE
, SMG2310A
, SMG2310N
, SMG2314N
, SMG2314NE
, SMG2318N
, SMG2319P
, SMG2321P
.
S20C45CE Datasheet Download — Mospec Semiconductor
Номер произв | S20C45CE | ||
Описание | (S20C30CE — S20C60CE) Schottky Barrier Rectifiers | ||
Производители | Mospec Semiconductor | ||
логотип | |||
1Page
MOSPEC VRRM VRWM 30 35 40 45 50 60 VR V VR(RMS) 21 25 28 32 35 42 V Total Device (Rated VR), TC=100 IF(AV) 10 (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current IFM IFSM 20 TJ , Tstg -65 to +150 ( IF =10 Amp TC = 25 ) ( IF =10 Amp TC = 125 ) VF 0.57 ( Rated DC Voltage, TC = 25 ) ( Rated DC Voltage, TC = 125 ) IR 0.5 mA DIM MILLIMETERS MIN MAX
S20C30CE Thru S20C60CE |
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Всего страниц | 2 Pages | ||
Скачать PDF |