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S20C45 Datasheet Download — Mospec Semiconductor

Номер произв S20C45
Описание SCHOTTKY BARRIER RECTIFIERS
Производители Mospec Semiconductor
логотип  
1Page

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MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
ESD: 4KV(Min.) Human-Body Model
In compliance with EU RoHs 2002/95/EC directives
S20C30 thru S20C60
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
30-60 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Symbol
30
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM

VRWM

VR

30
RMS Reverse Voltage

VR(RMS) 21

Average Rectifier Forward Current ( Per diode )

Total Device (Rated VR), TC=125

IF(AV)

Peak Repetitive Forward Current

(Rate VR, Square Wave, 20kHz)

Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single
phase, 60Hz)

IFM

IFSM

Operating and Storage Junction Temperature
Range

TJ , Tstg

S20C
35 40 45 50 60
35 40 45 50 60
25 28 32 35 42
10
20
20
200
-65 to +150
Unit
V
V
A
A
A
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
Per diode
Total
Coupling

Rθjc

Rθ c

3.8
3.4
3.0
/w
DIM
MILLIMETERS
MIN MAX
A 14.68 15.32
B 9.78 10.42
C 5.02 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 2.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.98
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage

( IF =10 Amp TC = 25 )

( IF =10 Amp TC = 100 )

Maximum Instantaneous Reverse Current

( Rated DC Voltage, TC = 25 )

( Rated DC Voltage, TC = 100 )

Symbol
S20C
Unit
30 35 40 45 50 60

VF 0.55 0.70 V

0.48 0.60

IR 0.5 mA

20

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S20C30 Thru S20C60
FIG-1 FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE ( )
FIG-3 TYPICAL REVERSE CHARACTERISTICS

Tj=100oc

Tj=75oc

Tj=25oc

PERCENT OF RATED REVERSE VOLTAGE ( )
FIG-5 PEAK FORWARD SURGE CURRENT
FIG-2 TYPICAL FORWARD CHARACTERISITICS

TJ=125

S20C50-60

TJ=125

S20C30-45

TJ=25

S20C50-60

TJ=25

S20C30-45
FORWARD VOLTAGE (Volts)
FIG-4 TYPICAL JUNCTION CAPACITANCE
S20C30-S20C45
S20C50-S20C60
REVERSE VOLTAGE (Volts)
NUMBER OF CYCLES AT 60 Hz
DJ-A

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S20C40CE Datasheet Download — Mospec Semiconductor

Номер произв S20C40CE
Описание (S20C30CE — S20C60CE) Schottky Barrier Rectifiers
Производители Mospec Semiconductor
логотип  
1Page

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MOSPEC
www.DataSheet4U.com
S20C30CE thru S20C60CE
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
30-60 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
S20C
Symbol
Unit
30CE 35CE 40CE 45CE 50CE 60CE

VRRM

VRWM 30 35 40 45 50 60

VR

V
RMS Reverse Voltage

VR(RMS) 21 25 28 32 35 42

V
Average Rectifier Forward Current

Total Device (Rated VR), TC=100

IF(AV)

10
20
A
Peak Repetitive Forward Current

(Rate VR, Square Wave, 20kHz)

Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)

IFM

IFSM

20
200
A
A
Operating and Storage Junction
Temperature Range

TJ , Tstg

-65 to +150
ELECTRIAL CHARACTERISTICS
Characteristic
S20C
Symbol
30CE 35CE 40CE 45CE 50CE 60CE
Unit
Maximum Instantaneous Forward Voltage

( IF =10 Amp TC = 25 )

( IF =10 Amp TC = 125 )

VF

0.57
0.46
0.70 V
0.57
Maximum Instantaneous Reverse Current

( Rated DC Voltage, TC = 25 )

( Rated DC Voltage, TC = 125 )

IR

0.5 mA
20

DIM MILLIMETERS

MIN MAX
A 14.68 15.32
B 9.78 10.42
C 5.02 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 2.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.98
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Common cathode
Suffix “C”

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S20C30CE Thru S20C60CE
www.DataSheet4U.com
FIG-1 FORWARD CURRENT DERATING CURVE
FIG-2 TYPICAL FORWARD CHARACTERISITICS
S20C30CE-45CE
S20C50CE-60CE
CASE TEMPERATURE ( )
FIG-3 TYPICAL REVERSE CHARACTERISTICS
S20C30CE-45CE
S20C50CE-60CE
PERCENT OF RATED REVERSE VOLTAGE ( )
FIG-5 PEAK FORWARD SURGE CURRENT
FORWARD VOLTAGE (Volts)
FIG-4 TYPICAL JUNCTION CAPACITANCE
S20C30CE-45CE
S20C50CE-60CE
REVERSE VOLTAGE (Volts)
NUMBER OF CYCLES AT 60 Hz

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S30D40C Datasheet Download — Won-Top Electronics

Номер произв S30D40C
Описание (S30D30C — S30D60C) 30A DUAL SCHOTTKY BARRIER RECTIFIER
Производители Won-Top Electronics
логотип  
1Page

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WTE
POWER SEMICONDUCTORS

S30D30C – S30D60C Pb

30A DUAL SCHOTTKY BARRIER RECTIFIER
Features

! Schottky Barrier Chip

! Guard Ring for Transient Protection

! Low Forward Voltage Drop

! Low Reverse Leakage Current

! High Surge Current Capability

! Plastic Material has UL Flammability

S
R
Classification 94V-O

L

H
J
PIN1 2 3
K
P
Mechanical Data

! Case: TO-3P, Molded Plastic

! Terminals: Plated Leads Solderable per

MIL-STD-750, Method 2026

! Polarity: See Diagram

! Weight: 5.6 grams (approx.)

! Mounting Position: Any

! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

! Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4
N
M
A
B
C
GD
TO-3P
Dim Min
Max

A 3.20

3.50

B 4.70

5.30

C — 23.00

D 19.00

E 2.80

3.20

G 0.45

0.85

H — 16.20

J 1.70

2.70
K
3.15 Ø
3.65 Ø

L—

4.50

M 5.25

5.65

N 1.10

1.40

P—

2.50

R 11.70 12.70

S 5.00

6.00
All Dimensions in mm
PIN 1 —
PIN 3 —
+
Case, PIN 2
E

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
www.DataSheet4U.com
Characteristic
Symbol
S30D
30C
S30D
35C
S30D
40C
S30D
45C
S30D
50C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM

VRWM

30
35
40
45
50

VR

S30D
60C
60
RMS Reverse Voltage

VR(RMS)

21
25
28
32
35
42
Average Rectified Output Current

@TC = 95°C

Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)

IO

IFSM

30
275
Forward Voltage

@IF = 15A

Peak Reverse Current
At Rated DC Blocking Voltage

@TA = 25°C

@TA = 100°C

Typical Junction Capacitance (Note 1)

VFM

IRM

Cj

0.55
1.0
60
1100
0.65
Typical Thermal Resistance Junction to Case (Note 2)

RJC

1.4
Operating and Storage Temperature Range

Tj, TSTG

-65 to +150
Unit
V
V
A
A
V
mA
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
S30D30C – S30D60C
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30

24
18
12
6

300
250
50 100

TC, CASE TEMPERATURE (°C)

Fig. 1 Forward Derating Curve
150
8.3 ms single half-sine-wave
JEDEC method
200
150
100

S30D30C — S30D45C

10

S30D50C — S30D60C

1.0

Tj = 25°C

Pulse width = 300 µs
2% duty cycle
0.1
0.2 0.4 0.6 0.8

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Fwd Characteristics per Element
4000

Tj = 25°C

f = 1MHz
1000
100
50

1 10 100

www.DataSheet4U.com NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
100
0.1 1.0
10 100

VR, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance per Element

TC = 100°C

10

TC = 75°C

1.0

TC = 25°C

0.1
S30D30C – S30D60C
0.01
0 40 80 120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics per Element
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MARKING INFORMATION
S30DxxC
S30DxxC
xx
Polarity
= Device Number
= 30, 35, 40, 45, 50 or 60
= As Marked on Body
PACKAGING INFORMATION
BULK
Tube Size
L x W x H (mm)
505 x 46 x 6.5
Quantity
(PCS)
30
Inner Box Size
L x W x H (mm)
520 x 145 x 95
Quantity
(PCS)
1,200
Carton Size
L x W x H (mm)
540 x 306 x 115
Quantity
(PCS)
2,400
Approx. Gross Weight
(KG)
18.0

Note: 1. Anti-static tube, water clear color.

RECOMMENDED SCREW MOUNTING ARRANGEMENT
www.DataSheet4U.com
Recommended isolated mounting when
screw is at heatsink potential. 6-32
hardware is used.
A conical washer should be used to
apply proper force to the device. Screw
should not be tightened with any type of
air-forced torque or equipment that may
cause high impact on device package.
The interface should apply a layer of
thermal grease or a highly conductive
thermal pad for better heat dissipation.
6-32 HEX Head Screw
Plain Washer
Rectifier
Insulator
Heatsink
Conical Washer
6-32 HEX Nut
S30D30C – S30D60C
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Основные диоды Шоттки, которые встречаются в блоках питания

Шоттки TO-220 SBL2040CT 10A x 2 =20A 40V Vf=0.6V при 10AШоттки TO-247 S30D40 15A x 2 =30A 40V Vf=0.55V при 15AУльтрафаст TO-220 SF1004G 5A x 2 =10A 200V Vf=0.97V при 5AУльтрафаст TO-220 F16C20C 8A x 2 =16A 200V Vf=1.3V при 8AУльтрафаст SR504 5A 40V Vf=0.57Шоттки TO-247 40CPQ060 20A x 2 =40A 60V Vf=0.49V при 20AШоттки TO-247 STPS40L45C 20A x 2 =40A 45V Vf=0.49VУльтрафаст TO-247 SBL4040PT 20A x 2 =40A 45V Vf=0.58V при 20AШоттки TO-220 63CTQ100 30A x 2 =60A 100 Vf=0.69V при 30AШоттки TO-220 MBR2545CT 15A x 2 =30A 45V Vf=0.65V при 15AШоттки TO-247 S60D40 30A x 2 =60A 40-60V Vf=0.65V при 30AШоттки TO-247 30CPQ150 15A x 2 =30A 150V Vf=1V при 15AШоттки TO-220 MBRP3045N 15A x 2 =30A 45V Vf=0.65V при 15AШоттки TO-220 S20C60 10A x 2 =20A 30-60V Vf=0.55V при 10AШоттки TO-247 SBL3040PT 15A x 2 =30A 30-40V Vf=0.55V при 15AШоттки TO-247 SBL4040PT 20A x 2 =40A 30-40V Vf=0.58V при 20AУльтрафаст TO-220 U20C20C 10A x 2 =20A 50-200V Vf=0.97V при 10A

Существуют и современные отечественные диодные сборки на большой ток. Вот их маркировка и внутренняя схема:

Также выпускаются высоковольтные диоды Шоттки, которые можно использовать например в БП ламповых усилителей и другой аппаратуры с повышенным питанием. Список приведён ниже:

Хотя более предпочтительным является применение диодов Шоттки в низковольтных мощных выпрямителях с выходными напряжениями в пару десятков вольт, на высоких частотах переключения.

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1 request,multiple quotations 1-click quotation comparison OEM,ODM & multi-category buying

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SIF10N40C Datasheet (PDF)

1.1. sif10n40c.pdf Size:375K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF10N40C
N- MOS / N-CHANNEL POWER MOSFET SIF10N40C

4.1. sif10n70c.pdf Size:291K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N70C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N70C

4.2. sif10n60c.pdf Size:329K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N60C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N60C

 4.3. sif10n65c.pdf Size:291K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N65C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N65C

S20C40 Datasheet Download — Mospec Semiconductor

Номер произв S20C40
Описание SCHOTTKY BARRIER RECTIFIERS
Производители Mospec Semiconductor
логотип  
1Page

No Preview Available !

MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
ESD: 4KV(Min.) Human-Body Model
In compliance with EU RoHs 2002/95/EC directives
S20C30 thru S20C60
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
30-60 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Symbol
30
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM

VRWM

VR

30
RMS Reverse Voltage

VR(RMS) 21

Average Rectifier Forward Current ( Per diode )

Total Device (Rated VR), TC=125

IF(AV)

Peak Repetitive Forward Current

(Rate VR, Square Wave, 20kHz)

Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single
phase, 60Hz)

IFM

IFSM

Operating and Storage Junction Temperature
Range

TJ , Tstg

S20C
35 40 45 50 60
35 40 45 50 60
25 28 32 35 42
10
20
20
200
-65 to +150
Unit
V
V
A
A
A
THERMAL RESISTANCES
Typical Thermal Resistance junction to case
Per diode
Total
Coupling

Rθjc

Rθ c

3.8
3.4
3.0
/w
DIM
MILLIMETERS
MIN MAX
A 14.68 15.32
B 9.78 10.42
C 5.02 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 2.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.98
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage

( IF =10 Amp TC = 25 )

( IF =10 Amp TC = 100 )

Maximum Instantaneous Reverse Current

( Rated DC Voltage, TC = 25 )

( Rated DC Voltage, TC = 100 )

Symbol
S20C
Unit
30 35 40 45 50 60

VF 0.55 0.70 V

0.48 0.60

IR 0.5 mA

20

No Preview Available !

S20C30 Thru S20C60
FIG-1 FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE ( )
FIG-3 TYPICAL REVERSE CHARACTERISTICS

Tj=100oc

Tj=75oc

Tj=25oc

PERCENT OF RATED REVERSE VOLTAGE ( )
FIG-5 PEAK FORWARD SURGE CURRENT
FIG-2 TYPICAL FORWARD CHARACTERISITICS

TJ=125

S20C50-60

TJ=125

S20C30-45

TJ=25

S20C50-60

TJ=25

S20C30-45
FORWARD VOLTAGE (Volts)
FIG-4 TYPICAL JUNCTION CAPACITANCE
S20C30-S20C45
S20C50-S20C60
REVERSE VOLTAGE (Volts)
NUMBER OF CYCLES AT 60 Hz
DJ-A

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S30D45C Datasheet Download — Won-Top Electronics

Номер произв S30D45C
Описание (S30D30C — S30D60C) 30A DUAL SCHOTTKY BARRIER RECTIFIER
Производители Won-Top Electronics
логотип  
1Page

No Preview Available !

WTE
POWER SEMICONDUCTORS

S30D30C – S30D60C Pb

30A DUAL SCHOTTKY BARRIER RECTIFIER
Features

! Schottky Barrier Chip

! Guard Ring for Transient Protection

! Low Forward Voltage Drop

! Low Reverse Leakage Current

! High Surge Current Capability

! Plastic Material has UL Flammability

S
R
Classification 94V-O

L

H
J
PIN1 2 3
K
P
Mechanical Data

! Case: TO-3P, Molded Plastic

! Terminals: Plated Leads Solderable per

MIL-STD-750, Method 2026

! Polarity: See Diagram

! Weight: 5.6 grams (approx.)

! Mounting Position: Any

! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

! Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4
N
M
A
B
C
GD
TO-3P
Dim Min
Max

A 3.20

3.50

B 4.70

5.30

C — 23.00

D 19.00

E 2.80

3.20

G 0.45

0.85

H — 16.20

J 1.70

2.70
K
3.15 Ø
3.65 Ø

L—

4.50

M 5.25

5.65

N 1.10

1.40

P—

2.50

R 11.70 12.70

S 5.00

6.00
All Dimensions in mm
PIN 1 —
PIN 3 —
+
Case, PIN 2
E

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
www.DataSheet4U.com
Characteristic
Symbol
S30D
30C
S30D
35C
S30D
40C
S30D
45C
S30D
50C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM

VRWM

30
35
40
45
50

VR

S30D
60C
60
RMS Reverse Voltage

VR(RMS)

21
25
28
32
35
42
Average Rectified Output Current

@TC = 95°C

Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)

IO

IFSM

30
275
Forward Voltage

@IF = 15A

Peak Reverse Current
At Rated DC Blocking Voltage

@TA = 25°C

@TA = 100°C

Typical Junction Capacitance (Note 1)

VFM

IRM

Cj

0.55
1.0
60
1100
0.65
Typical Thermal Resistance Junction to Case (Note 2)

RJC

1.4
Operating and Storage Temperature Range

Tj, TSTG

-65 to +150
Unit
V
V
A
A
V
mA
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
S30D30C – S30D60C
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30

24
18
12
6

300
250
50 100

TC, CASE TEMPERATURE (°C)

Fig. 1 Forward Derating Curve
150
8.3 ms single half-sine-wave
JEDEC method
200
150
100

S30D30C — S30D45C

10

S30D50C — S30D60C

1.0

Tj = 25°C

Pulse width = 300 µs
2% duty cycle
0.1
0.2 0.4 0.6 0.8

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Fwd Characteristics per Element
4000

Tj = 25°C

f = 1MHz
1000
100
50

1 10 100

www.DataSheet4U.com NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
100
0.1 1.0
10 100

VR, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance per Element

TC = 100°C

10

TC = 75°C

1.0

TC = 25°C

0.1
S30D30C – S30D60C
0.01
0 40 80 120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics per Element
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MARKING INFORMATION
S30DxxC
S30DxxC
xx
Polarity
= Device Number
= 30, 35, 40, 45, 50 or 60
= As Marked on Body
PACKAGING INFORMATION
BULK
Tube Size
L x W x H (mm)
505 x 46 x 6.5
Quantity
(PCS)
30
Inner Box Size
L x W x H (mm)
520 x 145 x 95
Quantity
(PCS)
1,200
Carton Size
L x W x H (mm)
540 x 306 x 115
Quantity
(PCS)
2,400
Approx. Gross Weight
(KG)
18.0

Note: 1. Anti-static tube, water clear color.

RECOMMENDED SCREW MOUNTING ARRANGEMENT
www.DataSheet4U.com
Recommended isolated mounting when
screw is at heatsink potential. 6-32
hardware is used.
A conical washer should be used to
apply proper force to the device. Screw
should not be tightened with any type of
air-forced torque or equipment that may
cause high impact on device package.
The interface should apply a layer of
thermal grease or a highly conductive
thermal pad for better heat dissipation.
6-32 HEX Head Screw
Plain Washer
Rectifier
Insulator
Heatsink
Conical Washer
6-32 HEX Nut
S30D30C – S30D60C
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SIF10N40C MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SIF10N40C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 140
W

Предельно допустимое напряжение сток-исток (Uds): 400
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Максимально допустимый постоянный ток стока (Id): 10
A

Максимальная температура канала (Tj): 150
°C

Сопротивление сток-исток открытого транзистора (Rds): 0.48
Ohm

Тип корпуса: TO-220, TO-220FP, TO-262, TO-263

SIF10N40C
Datasheet (PDF)

1.1. sif10n40c.pdf Size:375K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF10N40C
N- MOS / N-CHANNEL POWER MOSFET SIF10N40C

4.1. sif10n70c.pdf Size:291K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N70C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N70C

4.2. sif10n60c.pdf Size:329K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N60C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N60C

 4.3. sif10n65c.pdf Size:291K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N65C
N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N65C

Другие MOSFET… SMG2301
, SMG2301P
, SMG2302
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, IRF1404
, SMG2306NE
, SMG2310A
, SMG2310N
, SMG2314N
, SMG2314NE
, SMG2318N
, SMG2319P
, SMG2321P
.

S20C45CE Datasheet Download — Mospec Semiconductor

Номер произв S20C45CE
Описание (S20C30CE — S20C60CE) Schottky Barrier Rectifiers
Производители Mospec Semiconductor
логотип  
1Page

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MOSPEC
www.DataSheet4U.com
S20C30CE thru S20C60CE
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
30-60 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
S20C
Symbol
Unit
30CE 35CE 40CE 45CE 50CE 60CE

VRRM

VRWM 30 35 40 45 50 60

VR

V
RMS Reverse Voltage

VR(RMS) 21 25 28 32 35 42

V
Average Rectifier Forward Current

Total Device (Rated VR), TC=100

IF(AV)

10
20
A
Peak Repetitive Forward Current

(Rate VR, Square Wave, 20kHz)

Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)

IFM

IFSM

20
200
A
A
Operating and Storage Junction
Temperature Range

TJ , Tstg

-65 to +150
ELECTRIAL CHARACTERISTICS
Characteristic
S20C
Symbol
30CE 35CE 40CE 45CE 50CE 60CE
Unit
Maximum Instantaneous Forward Voltage

( IF =10 Amp TC = 25 )

( IF =10 Amp TC = 125 )

VF

0.57
0.46
0.70 V
0.57
Maximum Instantaneous Reverse Current

( Rated DC Voltage, TC = 25 )

( Rated DC Voltage, TC = 125 )

IR

0.5 mA
20

DIM MILLIMETERS

MIN MAX
A 14.68 15.32
B 9.78 10.42
C 5.02 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 2.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.98
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Common cathode
Suffix “C”

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S20C30CE Thru S20C60CE
www.DataSheet4U.com
FIG-1 FORWARD CURRENT DERATING CURVE
FIG-2 TYPICAL FORWARD CHARACTERISITICS
S20C30CE-45CE
S20C50CE-60CE
CASE TEMPERATURE ( )
FIG-3 TYPICAL REVERSE CHARACTERISTICS
S20C30CE-45CE
S20C50CE-60CE
PERCENT OF RATED REVERSE VOLTAGE ( )
FIG-5 PEAK FORWARD SURGE CURRENT
FORWARD VOLTAGE (Volts)
FIG-4 TYPICAL JUNCTION CAPACITANCE
S20C30CE-45CE
S20C50CE-60CE
REVERSE VOLTAGE (Volts)
NUMBER OF CYCLES AT 60 Hz

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