Даташит p55nf06 pdf ( datasheet )

Содержание:

STB55NF06 Datasheet (PDF)
STP55NF06FP Datasheet (PDF)
STP85NF55 Datasheet (PDF)
STP55NF06L Datasheet (PDF)
Основные параметры полевого n-канального транзистора STB55NF06 (B55NFO6), STP55NF06 (P55NF06), STP55NF06FP (P55NFO6FP)
STP80NF55-06FP MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
STP80NF55-06FP Datasheet (PDF)
P55NF06 Datasheet Download — Thinki Semiconductor
STP75NF75 Datasheet (PDF)
STP80NF55-08 Datasheet (PDF)
STP140NF55 Datasheet (PDF)
Другие разделы справочника:
STP45NF06 Datasheet (PDF)
P55NF06 Datasheet (PDF)
STP55NF06 Datasheet (PDF)
STP55N06L Datasheet (PDF)
STP80NF55-06FP Datasheet (PDF)

STB55NF06 Datasheet (PDF)

1.1. stb55nf06l-1 stb55nf06lt4.pdf Size:335K _upd

STP55NF06L
STB55NF06L — STB55NF06L-1
N-channel 60V — 0.014Ω — 55A TO-220/D2PAK/I2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STP55NF06L 60V 1.2. stb55nf06t4.pdf Size:793K _upd

STB55NF06, STP55NF06, STP55NF06FP
N-channel 60 V, 0.015 Ω, 50 A STripFET II Power MOSFET in
D²PAK, TO-220 and TO-220FP packages
Datasheet — production data
Features
TAB
TAB
Order code VDSS RDS(on) max. ID
STB55NF06
3
50 A
3 1
STP55NF06 60 V

1.3. stb55nf06.pdf Size:485K _st

STB55NF06 STB55NF06-1
STP55NF06 STP55NF06FP
N-CHANNEL 60V — 0.015 ? — 50A TO-220/TO-220FP/I?PAK/D?PAK
STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
TO-220FP
STP55NF06 60 V 1.4. stb55nf06l stb55nf06l-1 stp55nf06l.pdf Size:335K _st

STP55NF06L
STB55NF06L — STB55NF06L-1
N-channel 60V — 0.014? — 55A TO-220/D2PAK/I2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STP55NF06L 60V

1.5. stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf Size:541K _st

STB55NF06 — STB55NF06-1
STP55NF06 — STP55NF06FP
N-channel 60V — 0.015? — 50A — D2PAK/I2PAK/TO-220/TO-220FP
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STB55NF06 60V 1.6. stb55nf06.pdf Size:203K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor STB55NF06
·FEATURES
·With To-263(D2PAK) package
·Excellent switching performance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·High current,high switch speed
·Motor control,audio amplifiers
·DC-DC&DC-AC converters
·Automotive
·ABSOLUTE MAXIMU

STP55NF06FP Datasheet (PDF)

Даташит p5nk60zfp pdf ( datasheet )

1.1. stp55nf06fp.pdf Size:793K _upd

STP55NF06L
STB55NF06L — STB55NF06L-1
N-channel 60V — 0.014? — 55A TO-220/D2PAK/I2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STP55NF06L 60V

1.3. stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf Size:541K _st

STP55NF06L — STP55NF06LFP
STB55NF06L — STB55NF06L-1
N-CHANNEL 60V — 0.014? — 55A TO-220/FP/D2PAK/I2PAK
STripFETII POWER MOSFET
TYPE VDSS RDS(on) ID
STP55NF06L 60 V

1.5. stp55nf06.pdf Size:204K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor STP55NF06
DESCRIPTION
·With TO-220F packaging
·100% avalanche tested
·Fast switching speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor control
·Audio amplifiers
·DC-DC&DC-AC converters
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL ARAMETER VALUE UNIT
V Drain-Sou

STP85NF55 Datasheet (PDF)

F3nk80z

1.1. stb85nf55 sti85nf55 stp85nf55.pdf Size:945K _st

STB85NF55, STI85NF55
STP85NF55
N-channel 55 V, 0.0062 ?, 80 A, TO-220, D2PAK, I2PAK
STripFET II Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STB85NF55 55 V 1.2. stb85nf55l stp85nf55l.pdf Size:931K _st

STB85NF55L
STP85NF55L
N-channel 55 V, 0.0060 ?, 80 A, TO-220, D2PAK
STripFET II Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STB85NF55L 55 V

3.1. stp85nf3ll.pdf Size:264K _st

STP85NF3LL
STB85NF3LL-1
N-CHANNEL 30V — 0.006? — 85A TO-220/I2PAK
LOW GATE CHARGE STripFET POWER MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP85NF3LL 30 V 3.2. stp85nf3ll stb85nf3ll-1.pdf Size:271K _st

STP85NF3LL
STB85NF3LL-1
N-CHANNEL 30V — 0.006? — 85A TO-220/I2PAK
LOW GATE CHARGE STripFET POWER MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP85NF3LL 30 V

STP55NF06L Datasheet (PDF)

P60nf06

1.1. stp55nf06fp.pdf Size:793K _upd

STP55NF06L
STB55NF06L — STB55NF06L-1
N-channel 60V — 0.014? — 55A TO-220/D2PAK/I2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STP55NF06L 60V

1.3. stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf Size:541K _st

STP55NF06L — STP55NF06LFP
STB55NF06L — STB55NF06L-1
N-CHANNEL 60V — 0.014? — 55A TO-220/FP/D2PAK/I2PAK
STripFETII POWER MOSFET
TYPE VDSS RDS(on) ID
STP55NF06L 60 V

1.5. stp55nf06.pdf Size:204K _inchange_semiconductor

Основные параметры полевого n-канального транзистора STB55NF06 (B55NFO6), STP55NF06 (P55NF06), STP55NF06FP (P55NFO6FP)

Эта страница создана пользователем сайта через систему Коллективного разума и показывает существующую справочную информацию о параметрах полевого n-канального транзистора STB55NF06 (B55NFO6), STP55NF06 (P55NF06), STP55NF06FP (P55NFO6FP) . Информация о параметрах, цоколевке, характеристиках, местах продажи и производителях.

Тип канала: n-каналСтруктура (технология): MOSFET

Pd max, мВт	Uds max, В	Udg max, В	Ugs max, В	Id max, мА	Tj max, °C	Fr (T on/of)	Ciss tip, пФ	Rds, Ом
110000 (30000-TO220FP)	60		+-20	50000	-55+175	(20ns/36ns)		0.015

Производитель: STMicroelectronicsСфера применения: Популярность: 27805Дополнительные параметры транзистора STB55NF06 (B55NFO6), STP55NF06 (P55NF06), STP55NF06FP (P55NFO6FP):
Для STP55NF06FP, Pd max=30W.Условные обозначения описаны на странице «Теория».

STP80NF55-06FP MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: STP80NF55-06FP

Маркировка: P80NF55-06FP

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 45
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 60
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 142
nC

Время нарастания (tr): 155
ns

Выходная емкость (Cd): 1020
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0065
Ohm

Тип корпуса: TO-220FP

STP80NF55-06FP
Datasheet (PDF)

1.1. stp80nf55-06fp.pdf Size:437K _upd

STB80NF55-06 — STB80NF55-06-1
STP80NF55-06 — STP80NF55-06FP
N-channel 55V — 0.005Ω — 80A — TO-220 /FP — I2PAK — D2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STB80NF55-06 55V 1.2. stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp.pdf Size:447K _st

STB80NF55-06 — STB80NF55-06-1
STP80NF55-06 — STP80NF55-06FP
N-channel 55V — 0.005? — 80A — TO-220 /FP — I2PAK — D2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STB80NF55-06 55V

1.3. stp80nf55-07.pdf Size:36K _st

STP80NF55-07
?
N — CHANNEL 55V — 0.0055? — 80A — TO-220
STripFET? POWER MOSFET
TARGET DATA
TYPE VDSS RDS(on) ID
STP80NF55-07 55 V 1.4. stp80nf55l-08.pdf Size:339K _st

STP80NF55L-08
STB80NF55L-08 — STB80NF55L-08-1
N-CHANNEL 55V — 0.0065? — 80A — TO-220/D2PAK/I2PAK
STripFET II POWER MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP80NF55L-08 55 V 0.008? 80 A
STB80NF55L-08 55 V 0.008? 80 A
STB80NF55L-08-1 55 V 0.008? 80 A
3
3 1
TYPICAL RDS(on) = 0.0065?
2
1
D2PAK
LOW THRESHOLD DRIVE
TO-220
LOGIC LEVEL DEVICE
3
2
1
I2PAK
DESCRIPTION
This Po

1.5. stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf Size:195K _st

1.6. stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf Size:362K _st

STB80NF55-08T4
STP80NF55-08, STW80NF55-08
N-channel 55 V, 0.0065 ?, 80 A, TO-220, D2PAK, TO-247
STripFET Power MOSFET
Features
RDS(on)
Type VDSS ID
max
3
STB80NF55-08T4 55 V 1.7. stb80nf55l-06 stp80nf55l-06.pdf Size:399K _st

STB80NF55L-06
STP80NF55L-06
N-CHANNEL 55V — 0.005 ? — 80A D?PAK/TO-220
STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
STB80NF55L-06 55 V 1.8. stp80nf55.pdf Size:353K _st

STP80NF55-08
STB80NF55-08 STB80NF55-08-1
N-CHANNEL 55V — 0.0065 ? — 80A D2PAK/I2PAK/TO-220
STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
STB80NF55-08/-1 55 V 1.9. stp80nf55-06.pdf Size:206K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor STP80NF55-06
·FEATURES
·Typical R (on)=0.005Ω
DS
·Excellent switching performance
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Solenoid and relay drivers
·DC-DC converters
·Automotive environment
·ABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.

P55NF06 Datasheet Download — Thinki Semiconductor

Номер произв

P55NF06

Описание

N-CHANNEL POWER MOSFET TRANSISTOR

Производители

Thinki Semiconductor

логотип

1Page

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55NF06

55NF06
Pb
Pb Free Plating Product
N-CHANNEL POWER MOSFET TRANSISTOR
50 AMPERE 60 VOLT
N-CHANNEL POWER MOSFET

DESCRIPTION

Thinkisemi 50N06 is three-terminal silicon device with current

conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.

FEATURES

* RDS(ON) = 23mȍ@VGS = 10 V

* Ultra low gate charge ( typical 30 nC )

* Low reverse transfer capacitance ( CRSS = typical 80 pF )

* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability

SYMBOL

U55NF06 TO-251/IPAK
P55NF06 TO-220
F55NF06 TO-220F
D55NF06 TO-252/DPAK

APPLICATION

Auotmobile Convert System
Networking DC-DC Power System
Power Supply etc..

12 3

TO-251/IPAK

12 3 TO-220/TO-220F

1 2 3 TO-252/DPAK

1.Gate
2.Drain

ABSOLUTE MAXIMUM RATINGS

3.Source
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage

VDSS

60 V
Gate-Source Voltage

VGSS

±20 V
Continuous Drain Current

TC = 25°C

TC = 100°C

50 A
35 A
Pulsed Drain Current (Note 2)

IDM 200 A

Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)

EAS

EAR

480 mJ
13 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7 V/ns
TO-220
120 W

Power Dissipation (TC=25°C)

TO-251

90 W
TO-252
136 W
Junction Temperature

+150
°C
Operation and Storage Temperature

TSTG

-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by TJ

3. L=0.38mH, IAS=50A, VDD=25V, RG=20ȍ, Starting TJ=25°C

4. ISD50A, di/dt300A/ȝs, VDDBVDSS, Starting TJ=25°C

Page 1/6
2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

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55NF06

THERMAL DATA

PARAMETER
Junction to Ambient

Junction to Case

TO-220
TO-251
TO-252
TO-220
TO-251
TO-252
SYMBOL

șJA

șJC

RATING
62
62
100
1.24
1.28
1.1
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current

Gate-Source Leakage Current Forward

Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS

BVDSS VGS = 0 V, ID = 250 ȝA

IDSS VDS = 60 V, VGS = 0 V

IGSS

VGS = 20V, VDS = 0 V

VGS = -20V, VDS = 0 V

ϦBVDSSƸTJ

ID = 250 ȝA,

Referenced to 25°C

VGS(TH)

RDS(ON)

VDS = VGS, ID = 250 ȝA

VGS = 10 V, ID = 25 A

CISS

COSS

CRSS

VGS = 0 V, VDS = 25 V

f = 1MHz
MIN TYP MAX UNIT
60 V
10 ȝA
100 nA
-100 nA
0.07 V/°C
2.0 4.0 V
18 23 mȍ
900 1220
430 550
80 100
pF
pF
pF

ELECTRICAL CHARACTERISTICS(Cont.)

SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time

tD(ON)

tD(OFF)

VDD = 30V, ID =25 A,

RG = 50ȍ (Note 1, 2)

Turn-Off Fall Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

QGS

QGD

VDS = 48V, VGS = 10 V

ID = 50A (Note 1, 2)

DRAIN-SOURCE DIODE CHARACTERISTICS ANDʳMAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD IS = 50A, VGS = 0 V

Maximum Continuous Drain-Source Diode
Forward Current

Maximum Pulsed Drain-Source Diode
Forward Current

ISM

Reverse Recovery Time

tRR IS = 50A, VGS = 0 V

Reverse Recovery Charge

QRR dIF / dt = 100 A/ȝs

Notes: 1. Pulse Test: Pulse Width300ȝs, Duty Cycle2%

2. Essentially independent of operating temperature
40 60
100 200
90 180
80 160
30 40
9.6
10
ns
ns
ns
ns
nC
nC
nC
1.5 V
50 A
200 A
54 ns
81 ȝC
2006 Thinki Semiconductor Co.,Ltd.
Page 2/6
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

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55NF06

TEST CIRCUITS AND WAVEFORMS

VGS

(Driver)

ISD

(D.U.T.)

VDS

(D.U.T.)
D.U.T.
+
—
+

VDS

—
L

Same Type

VGS as D.U.T.

Driver

* dv/dt controlled by RG

* ISD controlled by pulse period

* D.U.T.-Device Under Test

VDD

Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D=
Period

VGS= 10V

IFM, Body Diode Forward Current

di/dt

IRM

Body Diode Reverse Current
Body Diode Recovery dv/dt

VDD

Body Diode
Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms
2006 Thinki Semiconductor Co.,Ltd.
Page 3/6
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

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6 Pages

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STP75NF75 Datasheet (PDF)

1.1. stp75nf75fp.pdf Size:423K _upd

STB75NF75
STP75NF75 — STP75NF75FP
N-channel 75V — 0.0095Ω — 80A — TO-220 — TO-220FP — D2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STB75NF75 75V 1.2. stb75nf75 stp75nf75 stp75nf75fp.pdf Size:426K _st

STB75NF75
STP75NF75 — STP75NF75FP
N-channel 75V — 0.0095? — 80A — TO-220 — TO-220FP — D2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STB75NF75 75V

1.3. stp75nf75l.pdf Size:382K _st

STP75NF75L
STB75NF75L STB75NF75L-1
N-CHANNEL 75V — 0.009 ? — 75A D2PAK/I2PAK/TO-220
STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
STB75NF75L/-1 75 V 1.4. stp75nf75fp.pdf Size:201K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor STP75NF75FP
·FEATURES
·Excellent switching performance
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching application
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Dra

1.5. stp75nf75.pdf Size:236K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor STP75NF75
FEATURES
·Drain Current –I = 80A@ T =25℃
D C
·Drain Source Voltage-
: V = 75V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.011Ω(Max)
DS(on)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
Suitable as primary switch in advanced hi

STP80NF55-08 Datasheet (PDF)

1.1. stp80nf55-06fp.pdf Size:437K _upd

1.3. stp80nf55-07.pdf Size:36K _st

STP80NF55-07
?
N — CHANNEL 55V — 0.0055? — 80A — TO-220
STripFET? POWER MOSFET
TARGET DATA
TYPE VDSS RDS(on) ID
STP80NF55-07 55 V 1.4. stp80nf55l-08.pdf Size:339K _st

1.5. stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf Size:195K _st

1.6. stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf Size:362K _st

STB80NF55L-06
STP80NF55L-06
N-CHANNEL 55V — 0.005 ? — 80A D?PAK/TO-220
STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
STB80NF55L-06 55 V 1.8. stp80nf55.pdf Size:353K _st

STP140NF55 Datasheet (PDF)

1.1. stb140nf55 stb140nf55-1 stp140nf55.pdf Size:481K _st

STB140NF55 — STB140NF55-1
STP140NF55
N-channel 55V — 0.0065? — 80A — D2PAK — I2PAK — TO-220
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID (1)
STB140NF55 55V 2.1. stb140nf75 stp140nf75-1 stp140nf75.pdf Size:539K _st

STP140NF75
STB140NF75 — STB140NF75-1
N-channel 75V — 0.0065? — 120A — D2PAK/I2/TO-220
STripFET III Power MOSFET
General features
Type VDSS RDS(on) ID
STB140NF75 75V

3.1. stp140n8f7.pdf Size:582K _upd-mosfet

STP140N8F7
N-channel 80 V, 3.5 mΩ typ., 90 A STripFET F7
Power MOSFET in a TO-220 package
Datasheet — production data
Features
Order code V R max. I P
DS DS(on) D TOT
STP140N8F7 80 V 4.3 mΩ 90 A 200 W
 Among the lowest R on the market
DS(on)
 Excellent figure of merit (FoM)
 Low C /C ratio for EMI immunity
rss iss
 High avalanche ruggedness
Applications

3.2. stp140n6f7.pdf Size:256K _update-mosfet

STP140N6F7
N-channel 60 V, 0.0031 Ω typ., 80 A STripFET F7
Power MOSFET in a TO-220 package
Datasheet — production data
Features
Order code V R max. I P
DS DS(on) D TOT
STP140N6F7 60 V 0.0035 Ω 80 A 158 W
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Applications

3.3. istp140n6f7.pdf Size:260K _inchange_semiconductor

isc N-Channel MOSFET Transistor ISTP140N6F7
·FEATURES
·With TO-220 packaging
·High speed switching
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·DC-DC converters
·Motor control
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT

Другие разделы справочника:

Добавить описание полевого транзистора.Добавить описание биполярного транзистора.Добавить описание биполярного транзистора с изолированным затвором.Поиск транзистора по маркировке.Поиск биполярного транзистора по основным параметрам.Поиск полевого транзистора по основным параметрам.Поиск БТИЗ (IGBT) по основным параметрам.Типоразмеры корпусов транзисторов.Магазины электронных компонентов.

Есть надежда, что справочник транзисторов окажется полезен опытным и начинающим радиолюбителям, конструкторам и учащимся. Всем тем, кто так или иначе сталкивается с необходимостью узнать больше о параметрах транзисторов. Более подробную информацию обо всех возможностях этого интернет-справочника можно прочитать на странице «О сайте».
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Спасибо за терпение и сотрудничество.

STP45NF06 Datasheet (PDF)

1.1. stp45nf06l.pdf Size:441K _st

STP45NF06L
STB45NF06L
N-CHANNEL 60V — 0.022? — 38ATO-220/ D2PAK
STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
STP45NF06L 60 V 1.2. stp45nf06.pdf Size:114K _st

STP45NF06
N-CHANNEL 60V — 0.022? — 38A TO-220
STripFET POWER MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP45NF06 60V

1.3. stb45nf06 stp45nf06.pdf Size:356K _st

STB45NF06
STP45NF06
N-channel 60 V, 0.023 ?, 38 A TO-220, D2PAK
STripFETTM II Power MOSFET
Features
Type VDSS RDS(on) ID
STP45NF06 60 V 1.4. stp45nf06.pdf Size:206K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor STP45NF06
·FEATURES
·Typical R (on)=0.022Ω
DS
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Solenold and relay dirvers
·DC-DC &DC-CAconverters
·Automotive environment
·ABSOLUTE MAXIMUM RATING

P55NF06 Datasheet (PDF)

1.1. stp55nf06fp.pdf Size:793K _upd

55NF06

Pb
55NF06
Pb Free Plating Product
N-CHANNEL POWER MOSFET TRANSISTOR
50 AMPERE 60 VOLT
N-CHANNEL POWER MOSFET
1
2
TO-251/IPAK
3
DESCRIPTION
Thinkisemi 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
12
threshold voltages of 4 volt.
TO-

1.3. stb55nf06l stb55nf06l-1 stp55nf06l.pdf Size:335K _st

STP55NF06L
STB55NF06L — STB55NF06L-1
N-channel 60V — 0.014? — 55A TO-220/D2PAK/I2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STP55NF06L 60V 1.4. stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf Size:541K _st

STB55NF06 — STB55NF06-1
STP55NF06 — STP55NF06FP
N-channel 60V — 0.015? — 50A — D2PAK/I2PAK/TO-220/TO-220FP
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STB55NF06 60V

1.5. stp55nf06l.pdf Size:454K _st

STP55NF06L — STP55NF06LFP
STB55NF06L — STB55NF06L-1
N-CHANNEL 60V — 0.014? — 55A TO-220/FP/D2PAK/I2PAK
STripFETII POWER MOSFET
TYPE VDSS RDS(on) ID
STP55NF06L 60 V 1.6. stp55nf06.pdf Size:204K _inchange_semiconductor

STP55NF06 Datasheet (PDF)

1.1. stp55nf06fp.pdf Size:793K _upd

STP55NF06L
STB55NF06L — STB55NF06L-1
N-channel 60V — 0.014? — 55A TO-220/D2PAK/I2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STP55NF06L 60V

1.3. stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf Size:541K _st

STP55NF06L — STP55NF06LFP
STB55NF06L — STB55NF06L-1
N-CHANNEL 60V — 0.014? — 55A TO-220/FP/D2PAK/I2PAK
STripFETII POWER MOSFET
TYPE VDSS RDS(on) ID
STP55NF06L 60 V

1.5. stp55nf06.pdf Size:204K _inchange_semiconductor

STP55N06L Datasheet (PDF)

4.1. stp55nf03l.pdf Size:234K _upd

STP55NF03L
STB55NF03L STB55NF03L-1
N-CHANNEL 30V — 0.01 Ω — 55A TO-220/D2PAK/I2PAK
STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
STP55NF03L 30 V 4.2. stp55nf06fp.pdf Size:793K _upd

4.3. stp55ne06-fp.pdf Size:261K _update

STP55NE06
STP55NE06FP
N-CHANNEL 60V — 0.019 Ω — 55A TO-220/TO-220FP
«SINGLE FEATURE SIZE» POWER MOSFET
Table 1. General Features Figure 1. Package
Type VDSS RDS(on) ID
STP55NE06 60 V 4.4. stb55nf06l stb55nf06l-1 stp55nf06l.pdf Size:335K _st

STP55NF06L
STB55NF06L — STB55NF06L-1
N-channel 60V — 0.014? — 55A TO-220/D2PAK/I2PAK
STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STP55NF06L 60V

4.5. stp55ne06.pdf Size:383K _st

STP55NE06
STP55NE06FP
N — CHANNEL ENHANCEMENT MODE
» SINGLE FEATURE SIZE? » POWER MOSFET
TYPE VDSS RDS(on) ID
STP55NE06 60 V 4.6. stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf Size:541K _st

STP55NF06L — STP55NF06LFP
STB55NF06L — STB55NF06L-1
N-CHANNEL 60V — 0.014? — 55A TO-220/FP/D2PAK/I2PAK
STripFETII POWER MOSFET
TYPE VDSS RDS(on) ID
STP55NF06L 60 V 4.8. stp55ne06-fp.pdf Size:271K _st

STP55NE06
STP55NE06FP
N-CHANNEL 60V — 0.019 ? — 55A TO-220/TO-220FP
«SINGLE FEATURE SIZE» POWER MOSFET
Table 1. General Features Figure 1. Package
Type VDSS RDS(on) ID
STP55NE06 60 V 4.9. stp55ne06l.pdf Size:115K _st

STP55NE06L
STP55NE06LFP
N — CHANNEL ENHANCEMENT MODE
» SINGLE FEATURE SIZE? » POWER MOSFET
TYPE VDSS RDS(on) ID
STP55NE06L 60 V 4.10. stp55nf03l stb55nf03l-1.pdf Size:338K _st

STP55NF03L
STB55NF03L STB55NF03L-1
N-CHANNEL 30V — 0.01 ? — 55A TO-220/D2PAK/I2PAK
STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
STP55NF03L 30 V 4.11. stp55nf06.pdf Size:204K _inchange_semiconductor

STP80NF55-06FP Datasheet (PDF)

1.1. stp80nf55-06fp.pdf Size:437K _upd

1.3. stp80nf55-07.pdf Size:36K _st

STP80NF55-07
?
N — CHANNEL 55V — 0.0055? — 80A — TO-220
STripFET? POWER MOSFET
TARGET DATA
TYPE VDSS RDS(on) ID
STP80NF55-07 55 V 1.4. stp80nf55l-08.pdf Size:339K _st

1.5. stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf Size:195K _st

1.6. stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf Size:362K _st

STB80NF55L-06
STP80NF55L-06
N-CHANNEL 55V — 0.005 ? — 80A D?PAK/TO-220
STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
STB80NF55L-06 55 V 1.8. stp80nf55.pdf Size:353K _st