Fgh40n60
Содержание:
IRFPS40N60KPBF Datasheet (PDF)
1.1. irfps40n60k irfps40n60kpbf.pdf Size:180K _upd-mosfet
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg Results in Simple Drive
VDS (V) 600
Available
Requirement
RDS(on) ()VGS = 10 V 0.110
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Qg (Max.) (nC) 330
Ruggedness
Qgs (nC) 84
• Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 150
and Current
1.2. irfps40n60kpbf.pdf Size:196K _international_rectifier
PD — 95702
SMPS MOSFET
IRFPS40N60KPbF
HEXFET Power MOSFET
Applications
l Hard Switching Primary or PFC Switch
VDSS RDS(on) typ. ID
l Switch Mode Power Supply (SMPS)
600V 0.110 Ω 40A
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/
1.3. irfps40n60k.pdf Size:107K _international_rectifier
PD — 94384
SMPS MOSFET
IRFPS40N60K
HEXFET Power MOSFET
Applications
Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID
Switch Mode Power Supply (SMPS)
600V 0.110 Ω 40A
Uninterruptible Power Supply
High Speed Power Switching
Motor Drive
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
SUPER TO-
1.4. irfps40n60k sihfps40n60k.pdf Size:178K _vishay
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Qg Results in Simple Drive
VDS (V) 600
Available
Requirement
RDS(on) (?)VGS = 10 V 0.110
RoHS*
Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Qg (Max.) (nC) 330
Ruggedness
Qgs (nC) 84
Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 150
and Current
Configura
IRFPS40N60K Datasheet (PDF)
1.1. irfps40n60k irfps40n60kpbf.pdf Size:180K _upd-mosfet
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg Results in Simple Drive
VDS (V) 600
Available
Requirement
RDS(on) ()VGS = 10 V 0.110
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Qg (Max.) (nC) 330
Ruggedness
Qgs (nC) 84
• Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 150
and Current
1.2. irfps40n60kpbf.pdf Size:196K _international_rectifier
PD — 95702
SMPS MOSFET
IRFPS40N60KPbF
HEXFET Power MOSFET
Applications
l Hard Switching Primary or PFC Switch
VDSS RDS(on) typ. ID
l Switch Mode Power Supply (SMPS)
600V 0.110 Ω 40A
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/
1.3. irfps40n60k.pdf Size:107K _international_rectifier
PD — 94384
SMPS MOSFET
IRFPS40N60K
HEXFET Power MOSFET
Applications
Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID
Switch Mode Power Supply (SMPS)
600V 0.110 Ω 40A
Uninterruptible Power Supply
High Speed Power Switching
Motor Drive
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
SUPER TO-
1.4. irfps40n60k sihfps40n60k.pdf Size:178K _vishay
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Low Gate Charge Qg Results in Simple Drive
VDS (V) 600
Available
Requirement
RDS(on) (?)VGS = 10 V 0.110
RoHS*
Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Qg (Max.) (nC) 330
Ruggedness
Qgs (nC) 84
Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 150
and Current
Configura
STP40N60M2 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STP40N60M2
Маркировка: 40N60M2
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 250
W
Предельно допустимое напряжение сток-исток (Uds): 600
V
Предельно допустимое напряжение затвор-исток (Ugs): 25
V
Пороговое напряжение включения Ugs(th): 4
V
Максимально допустимый постоянный ток стока (Id): 34
A
Максимальная температура канала (Tj): 150
°C
Общий заряд затвора (Qg): 57
nC
Время нарастания (tr): 13.5
ns
Выходная емкость (Cd): 117
pf
Сопротивление сток-исток открытого транзистора (Rds): 0.088
Ohm
Тип корпуса: TO-220
STP40N60M2
Datasheet (PDF)
1.1. stp40n60m2.pdf Size:1189K _upd
STB40N60M2, STP40N60M2,
STW40N60M2
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus low Qg
Power MOSFETs in D2PAK, TO-220 and TO-247 packages
Datasheet — production data
Features
TAB
TAB
Order codes VDS @ TJmax RDS(on) max ID
2
STB40N60M2
3
1
3
2 STP40N60M2 650 V 0.088 Ω 34 A
D2PAK
1
STW40N60M2
TO-220
• Extremely low gate charge
• Lower RDS(on) x area vs previous
3.1. stp40n65m2.pdf Size:440K _upd
STI40N65M2, STP40N65M2
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh M2
Power MOSFET in I²PAK and TO-220 packages
Datasheet — production data
Features
TAB TAB
Order code V R max. I
DS DS(on) D
STI40N65M2
650 V 0.099 Ω 32 A
STP40N65M2
3
• Extremely low gate charge
2
3
2 1
• Excellent output capacitance (COSS) profile
1
I²PAK TO-220
• 100% avalanche tested
4.1. stp40ns15.pdf Size:81K _upd
STP40NS15
N-CHANNEL 150V — 0.042Ω — 40A TO-220
MESH OVERLAY MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP40NS15 150 V 4.2. stp40n20.pdf Size:501K _upd
STP40N20 — STF40N20
STB40N20 — STW40N20
N-channel 200V — 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247
Low gate charge STripFET Power MOSFET
General features
Type VDSS RDS(on) ID PW
3
STB40N20 200V
4.3. stp40n05.pdf Size:337K _update-mosfet
4.4. stp40ns15.pdf Size:128K _st
STP40NS15
N-CHANNEL 150V — 0.042? — 40A TO-220
MESH OVERLAY MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP40NS15 150 V
4.5. stp40nf10 std40nf10.pdf Size:373K _st
STD40NF10
STP40NF10
N-channel 100V — 0.025? — 50A TO-220 / DPAK
Low gate charge STripFET II Power MOSFET
Features
Type VDSS RDS(on) Max ID
STD40NF10 100V 4.6. stp40nf12.pdf Size:246K _st
STP40NF12
N-channel 120V — 0.028? — 40A TO-220
Low gate charge STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STP40NF12 120V 4.7. stb40nf20 stf40nf20 stp40nf20 stw40nf20.pdf Size:484K _st
STP40NF20 — STF40NF20
STB40NF20 — STW40NF20
N-channel 200V — 0.038? -40A- D2PAK/TO-220/TO-220FP/TO-247
Low gate charge STripFET Power MOSFET
Features
Type VDSS RDS(on) ID PW
3
STB40NF20 200V 4.8. stb40n20 stp40n20 stp40n20fp stw40n20.pdf Size:501K _st
STP40N20 — STF40N20
STB40N20 — STW40N20
N-channel 200V — 0.038? -40A- D2PAK/TO-220/TO-220FP/TO-247
Low gate charge STripFET Power MOSFET
General features
Type VDSS RDS(on) ID PW
3
STB40N20 200V 4.9. stp40ne03l-20.pdf Size:323K _st
STP40NE03L-20
N — CHANNEL ENHANCEMENT MODE
» SINGLE FEATURE SIZE? » POWER MOSFET
TYPE VDSS RDS(on) ID
STP40NE03L-20 30 V 4.10. stp40nf10l.pdf Size:239K _st
STP40NF10L
N-channel 100V — 0.028? — 40A TO-220
Low gate charge STripFET Power MOSFET
General features
Type VDSS RDS(on) ID
STP40NF10L 100V 4.11. stp40nf10,std40nf10.pdf Size:685K _st
STP40NF10
STD40NF10 — STB40NF10
N-CHANNEL 100V — 0.024? — 50A TO-220/DPAK/D2PAK
LOW GATE CHARGE STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
STP40NF10 100 V 4.12. stp40nf03l.pdf Size:267K _st
STP40NF03L
N — CHANNEL 30V — 0.020 ? — 40A TO-220
STripFET? POWER MOSFET
TYPE VDSS RDS(on) ID
STP40NF03L 30 V 4.13. stf40nf03l stp40nf03l.pdf Size:429K _st
STF40NF03L
STP40NF03L
N-channel 30 V, 0.018 ?, 40 A TO-220, TO-220FP
STripFET Power MOSFET
Features
Type VDSS RDS(on) max ID
STF40NF03L 30 V 0.022 ? 23 A
STP40NF03L 30 V 0.022 ? 40 A
3 3
Low threshold device
2 2
1 1
Application
TO-220
TO-220FP
Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronics unique «single feature size»
4.14. stp40n03l-20.pdf Size:108K _st
STP40N03L-20
N — CHANNEL ENHANCEMENT MODE
«ULTRA HIGH DENSITY» POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V R I
DSS DS(on) D
STP40N03L-20 30 V
Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.
STP40N60M2 Datasheet (PDF)
1.1. stp40n60m2.pdf Size:1189K _upd
STB40N60M2, STP40N60M2,
STW40N60M2
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus low Qg
Power MOSFETs in D2PAK, TO-220 and TO-247 packages
Datasheet — production data
Features
TAB
TAB
Order codes VDS @ TJmax RDS(on) max ID
2
STB40N60M2
3
1
3
2 STP40N60M2 650 V 0.088 Ω 34 A
D2PAK
1
STW40N60M2
TO-220
• Extremely low gate charge
• Lower RDS(on) x area vs previous
3.1. stp40n65m2.pdf Size:440K _upd
STI40N65M2, STP40N65M2
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh M2
Power MOSFET in I²PAK and TO-220 packages
Datasheet — production data
Features
TAB TAB
Order code V R max. I
DS DS(on) D
STI40N65M2
650 V 0.099 Ω 32 A
STP40N65M2
3
• Extremely low gate charge
2
3
2 1
• Excellent output capacitance (COSS) profile
1
I²PAK TO-220
• 100% avalanche tested
4.1. stp40ns15.pdf Size:81K _upd
STP40NS15
N-CHANNEL 150V — 0.042Ω — 40A TO-220
MESH OVERLAY MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP40NS15 150 V 4.2. stp40n20.pdf Size:501K _upd
STP40N20 — STF40N20
STB40N20 — STW40N20
N-channel 200V — 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247
Low gate charge STripFET Power MOSFET
General features
Type VDSS RDS(on) ID PW
3
STB40N20 200V
4.3. stp40n05.pdf Size:337K _update-mosfet
4.4. stp40ns15.pdf Size:128K _st
STP40NS15
N-CHANNEL 150V — 0.042? — 40A TO-220
MESH OVERLAY MOSFET
PRELIMINARY DATA
TYPE VDSS RDS(on) ID
STP40NS15 150 V
4.5. stp40nf10 std40nf10.pdf Size:373K _st
STD40NF10
STP40NF10
N-channel 100V — 0.025? — 50A TO-220 / DPAK
Low gate charge STripFET II Power MOSFET
Features
Type VDSS RDS(on) Max ID
STD40NF10 100V 4.6. stp40nf12.pdf Size:246K _st
STP40NF12
N-channel 120V — 0.028? — 40A TO-220
Low gate charge STripFET II Power MOSFET
General features
Type VDSS RDS(on) ID
STP40NF12 120V 4.7. stb40nf20 stf40nf20 stp40nf20 stw40nf20.pdf Size:484K _st
STP40NF20 — STF40NF20
STB40NF20 — STW40NF20
N-channel 200V — 0.038? -40A- D2PAK/TO-220/TO-220FP/TO-247
Low gate charge STripFET Power MOSFET
Features
Type VDSS RDS(on) ID PW
3
STB40NF20 200V 4.8. stb40n20 stp40n20 stp40n20fp stw40n20.pdf Size:501K _st
STP40N20 — STF40N20
STB40N20 — STW40N20
N-channel 200V — 0.038? -40A- D2PAK/TO-220/TO-220FP/TO-247
Low gate charge STripFET Power MOSFET
General features
Type VDSS RDS(on) ID PW
3
STB40N20 200V 4.9. stp40ne03l-20.pdf Size:323K _st
STP40NE03L-20
N — CHANNEL ENHANCEMENT MODE
» SINGLE FEATURE SIZE? » POWER MOSFET
TYPE VDSS RDS(on) ID
STP40NE03L-20 30 V 4.10. stp40nf10l.pdf Size:239K _st
STP40NF10L
N-channel 100V — 0.028? — 40A TO-220
Low gate charge STripFET Power MOSFET
General features
Type VDSS RDS(on) ID
STP40NF10L 100V 4.11. stp40nf10,std40nf10.pdf Size:685K _st
STP40NF10
STD40NF10 — STB40NF10
N-CHANNEL 100V — 0.024? — 50A TO-220/DPAK/D2PAK
LOW GATE CHARGE STripFET II POWER MOSFET
TYPE VDSS RDS(on) ID
STP40NF10 100 V 4.12. stp40nf03l.pdf Size:267K _st
STP40NF03L
N — CHANNEL 30V — 0.020 ? — 40A TO-220
STripFET? POWER MOSFET
TYPE VDSS RDS(on) ID
STP40NF03L 30 V 4.13. stf40nf03l stp40nf03l.pdf Size:429K _st
STF40NF03L
STP40NF03L
N-channel 30 V, 0.018 ?, 40 A TO-220, TO-220FP
STripFET Power MOSFET
Features
Type VDSS RDS(on) max ID
STF40NF03L 30 V 0.022 ? 23 A
STP40NF03L 30 V 0.022 ? 40 A
3 3
Low threshold device
2 2
1 1
Application
TO-220
TO-220FP
Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronics unique «single feature size»
4.14. stp40n03l-20.pdf Size:108K _st
STP40N03L-20
N — CHANNEL ENHANCEMENT MODE
«ULTRA HIGH DENSITY» POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V R I
DSS DS(on) D
STP40N03L-20 30 V
