10n60
Содержание:
FQPF10N20C Datasheet (PDF)
1.1. fqpf10n20.pdf Size:764K _fairchild_semi
April 2000
TM
QFET
QFET
QFET
QFET
200V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 6.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 13 pF)
This advanced technology has be
1.2. fqp10n20c fqpf10n20c.pdf Size:875K _fairchild_semi
TM
QFET
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 40.5 pF)
This advanced technology has been especially tailor
1.3. fqpf10n20c.pdf Size:201K _inchange_semiconductor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor FQPF10N20C
·FEATURES
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 200 V
DSS
V Gat
FQP10N60C Datasheet (PDF)
1.1. fqp10n60c fqpf10n60c.pdf Size:1122K _fairchild_semi
April 2007
QFET
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
Features Description
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge ( typical 44 nC)
DMOS technology.
• Low Crss ( typical 18 pF)
This advanced technology has been especiall
1.2. fqp10n60cf fqpf10n60cf.pdf Size:933K _fairchild_semi
February 2007
TM
FRFET
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
Features Description
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge ( typical 44 nC)
DMOS technology.
• Low Crss ( typical 18 pF)
This advanced technology has been especia
2.1. fqp10n60.pdf Size:59K _fairchild_semi
TIGER ELECTRONIC CO.,LTD
Product specification
600V N-Channel MOSFET
FQP10N60
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s
proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in t
SSH10N60A Datasheet (PDF)
1.1. ssh10n60a.pdf Size:923K _samsung
Advanced Power MOSFET
FEATURES
BVDSS = 600 V
Avalanche Rugged Technology
RDS(on) = 0.8 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 10 A
Improved Gate Charge
Extended Safe Operating Area
A
Lower Leakage Current : 25 (Max.) @ VDS = 600V
?
Low RDS(ON) : 0.646 (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units
4.1. ssh10n80.pdf Size:263K _upd-mosfet
4.2. ssh10n80a.pdf Size:211K _samsung
SSH10N80A
Advanced Power MOSFET
FEATURES
BVDSS = 800 V
Avalanche Rugged Technology
RDS(on) = 0.95 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 10 A
Improved Gate Charge
Extended Safe Operating Area
TO-3P
Lower Leakage Current : 25 A (Max.) @ VDS = 700V
Low RDS(ON) : 1.552 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteris
4.3. ssh10n70 ssh10n80.pdf Size:294K _samsung
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
4.4. ssh10n90a.pdf Size:205K _samsung
SSH10N90A
Advanced Power MOSFET
FEATURES
BVDSS = 900 V
Avalanche Rugged Technology
RDS(on) = 1.2 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 10 A
Improved Gate Charge
Extended Safe Operating Area
TO-3P
Lower Leakage Current : 25 A (Max.) @ VDS = 900V
Low RDS(ON) : 0.938 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characterist
FQP5N60C Datasheet (PDF)
1.1. fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf Size:858K _fairchild_semi
TM
QFET
FQP5N60C/FQPF5N60C
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.5 pF)
This advanced technology has been especially tailored t
5.1. fqp5n80.pdf Size:659K _fairchild_semi
September 2000
TM
QFET
FQP5N80
800V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 25 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 11 pF)
This advanced technology has been especially tailor
5.2. fqp5n20l.pdf Size:606K _fairchild_semi
August 2001
TM
QFET
FQP5N20L
200V LOGIC N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.0 pF)
This advanced technology has been especially
5.3. fqp5n30.pdf Size:744K _fairchild_semi
May 2000
TM
QFET
QFET
QFET
QFET
300V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 5.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 9.5 pF)
This advanced technology has been es
5.4. fqp5n40.pdf Size:690K _fairchild_semi
April 2000
TM
QFET
QFET
QFET
QFET
400V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.6Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 7.0 pF)
This advanced technology has been
5.5. fqp5n20.pdf Size:677K _fairchild_semi
April 2000
TM
QFET
QFET
QFET
QFET
200V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.0 pF)
This advanced technology has been
5.6. fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf Size:879K _fairchild_semi
TM
QFET
FQP5N50C/FQPF5N50C
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC)
planar stripe, DMOS technology.
• Low Crss ( typical 15pF)
This advanced technology has been especially tailored to
5.7. fqp5n90.pdf Size:678K _fairchild_semi
September 2000
TM
QFET
QFET
QFET
QFET
FQP5N90
900V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 5.4A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 13 pF)
This advanced technology has be
CS10N60F_A9R Datasheet (PDF)
1.1. cs10n60f a9hd.pdf Size:351K _crhj
Silicon N-Channel Power MOSFET
R
○
CS10N60F A9HD
VDSS 600 V
General Description：
ID 10 A
CS10N60F A9HD, the silicon N-channel Enhanced
PD (TC=25℃) 50 W
VDMOSFETs, is obtained by the self-aligned planar
RDS(ON)Typ 0.6 Ω
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in variou
1.2. cs10n60f a9r.pdf Size:272K _crhj
Silicon N-Channel Power MOSFET R
○
CS10N60F A9R
General Description：
VDSS 600 V
CS10N60F A9R, the silicon N-channel Enhanced
ID 10 A
PD(TC=25℃) 40 W
VDMOSFETs, is obtained by the self-aligned planar Technology
RDS(ON)Typ 0.68 Ω
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various p
2.1. cs10n60fa9hd.pdf Size:2795K _update_mosfet
CS10N60FA9HD
600V Silicon N-Channel Power MOSFET
■ Features ■ Outline
• Fast switching. TO-220F
• ESD improved capability.
0.189(4.80)
0.173(4.40)
• Low gate charge.
0.409(10.40)
0.378(9.60) 0.114(2.90)
• Low reverse transfer capacitances.
0.098(2.50)
• 100% single pulse avalanche energy test.
0.638(16.20)
0.606(15.40)
Marking code
■ Mechanical data
G D S
• E
2.2. cs10n60f.pdf Size:280K _update_mosfet
BRF10N60(CS10N60F) N-CHANNEL MOSFET/N 沟道 MOS 晶体管
用途: 用于高功率 DC/DC 转换和功率开关。
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies.
特点: 低栅电荷,低反馈电容,开关速度快。
Features: Low gate charge, low crss, fast switching.
极限参数/Absolute maximum ratings(Ta=25
2.3. cs10n60fa9hd.pdf Size:2795K _citcorp
CS10N60FA9HD
600V Silicon N-Channel Power MOSFET
■ Features ■ Outline
• Fast switching. TO-220F
• ESD improved capability.
0.189(4.80)
0.173(4.40)
• Low gate charge.
0.409(10.40)
0.378(9.60) 0.114(2.90)
• Low reverse transfer capacitances.
0.098(2.50)
• 100% single pulse avalanche energy test.
0.638(16.20)
0.606(15.40)
Marking code
■ Mechanical data
G D S
• E
FQPF12N60C Datasheet (PDF)
1.1. fqpf12n60 fqpf12n60t.pdf Size:547K _fairchild_semi
April 2000
TM
QFET
QFET
QFET
QFET
FQPF12N60
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 5.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 25 pF)
This advanced technology has been
1.2. fqpf12n60c.pdf Size:1123K _fairchild_semi
November 2013
FQPF12N60C
N-Channel QFET MOSFET
600 V, 12 A, 650 mΩ
Description Features
These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V,
transistors are produced using Fairchild’s proprietary, planar ID = 6 A
stripe, DMOS technology. This advanced technology has
• Low Gate Charge (Typ. 48 nC)
been especially tailored
1.3. fqpf12n60.pdf Size:549K _fairchild_semi
April 2000
TM
QFET
QFET
QFET
QFET
FQPF12N60
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 5.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 42 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 25 pF)
This advanced technology has been
1.4. fqpf12n60ct.pdf Size:803K _fairchild_semi
September 2006
QFET
FQPF12N60CT
600V N-Channel MOSFET
Features Description
• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V These N-Channel enhancement mode power field effect
• Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low Crss ( typical 21 pF)
This advanced technology has been especially tailored
1.5. fqp12n60c fqpf12n60c.pdf Size:1170K _fairchild_semi
September 2007
QFET
FQP12N60C / FQPF12N60C
600V N-Channel MOSFET
Features Description
• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V These N-Channel enhancement mode power field effect
• Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low Crss ( typical 21pF)
This advanced technology has been especiall
1.6. fqpf12n60c.pdf Size:224K _inchange_semiconductor
isc N-Channel Mosfet Transistor FQPF12N60C
·FEATURES
·Drain Current –I = 12A@ T =25℃
D C
·Drain Source Voltage-
: V = 600V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.65Ω(Max)
DS(on)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Designed for high efficiency switch mode power supply.
·A
FQT1N60C Datasheet (PDF)
1.1. fqt1n60c fqt1n60ctf ws.pdf Size:816K _fairchild_semi
November 2007
QFET
FQT1N60C
N-Channel MOSFET
600V, 0.2A, 11.5Ω
Features Description
• RDS(on) = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
• Low gate charge ( Typ. 4.8nC)
stripe, DMOS technology.
• Low Crss ( Typ. 3.5pF)
This advanced technology has been especia
5.1. fqt1n80tf ws.pdf Size:807K _fairchild_semi
November 2007
QFET
FQT1N80
N-Channel MOSFET
800V, 0.2A, 20Ω
Features Description
• RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
• Low gate charge ( Typ. 5.5nC)
stripe, DMOS technology.
• Low Crss ( Typ. 2.7pF)
This advanced technology has been especiall
5.2. fqt1n80.pdf Size:807K _fairchild_semi
November 2007
QFET
FQT1N80
N-Channel MOSFET
800V, 0.2A, 20Ω
Features Description
• RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
• Low gate charge ( Typ. 5.5nC)
stripe, DMOS technology.
• Low Crss ( Typ. 2.7pF)
This advanced technology has been especiall
Результаты подбора MOSFET (поиска аналога)
| Маркировка | Pol | Struct | Pd | Uds | Ugs | Ugs(th) | Id | Tj | Qg | Tr | Cd | Rds | Caps |
| 10N60 | N | MOSFET | 156 | 600 | 30 | 10 | 150 | 69 | 166 | 0.72 | TO220 TO220F TO220F1 TO220F2 TO262 TO263 | ||
| 10N60K | N | MOSFET | 50 | 600 | 30 | 10 | 150 | 69 | 125 | 0.72 | TO220F TO220F1 TO220F3 | ||
| 10N65 | N | MOSFET | 178 | 650 | 30 | 10 | 150 | 69 | 166 | 0.72 | TO263 TO220 TO262 TO220F TO220F1 TO220F2 | ||
| 10N65K | N | MOSFET | 156 | 650 | 30 | 10 | 150 | 69 | 166 | 0.72 | TO262 TO220F TO220F1 | ||
| 10N65Z | N | MOSFET | 50 | 650 | 30 | 10 | 150 | 145 | 135 | 0.72 | TO220F1 | ||
| 12N60 | N | MOSFET | 225 | 600 | 30 | 12 | 150 | 115 | 200 | 0.6 | TO220 TO220F1 TO220F TO262 | ||
| 12N60F | N | MOSFET | 54 | 600 | 30 | 12 | 150 | 90 | 180 | 0.65 | TO220F | ||
| 12N70 | N | MOSFET | 225 | 700 | 30 | 12 | 150 | 115 | 200 | 0.7 | TO220 TO220F TO220F1 TO220F2 | ||
| 15N60 | N | MOSFET | 312 | 600 | 30 | 15 | 150 | 200 | 270 | 0.5 | TO247 TO3P TO220F1 | ||
| 15N65 | N | MOSFET | 312 | 650 | 30 | 15 | 150 | 125 | 295 | 0.5 | TO247 TO220F TO220F2 | ||
| 2SK3451-01MR | N | MOSFET | 80 | 600 | 30 | 13 | 150 | 34 | 16 | 160 | 0.5 | TO220F | |
| 2SK3496-01MR | N | MOSFET | 60 | 650 | 30 | 10 | 150 | 16 | 160 | 0.59 | TO220F | ||
| 2SK3687-01MR | N | MOSFET | 97 | 600 | 30 | 16 | 150 | 16 | 200 | 0.57 | TO220F | ||
| 2SK3929-01MR | N | MOSFET | 70 | 600 | 30 | 11 | 150 | 7 | 150 | 0.62 | TO220F | ||
| AOTF12N60FD | N | MOSFET | 50 | 600 | 30 | 4 | 12 | 150 | 41 | 90 | 166 | 0.65 | TO220F |
| AOTF15S65 | N | MOSFET | 50 | 650 | 30 | 4 | 15 | 150 | 24 | 58 | 0.29 | TO220F | |
| AOTF20S60 | N | MOSFET | 50 | 600 | 30 | 20 | 150 | 32 | 68 | 0.199 | TO220F | ||
| AOTF25S65 | N | MOSFET | 50 | 650 | 30 | 4 | 25 | 150 | 30 | 87 | 0.19 | TO220F | |
| AOTF27S60 | N | MOSFET | 50 | 600 | 30 | 27 | 150 | 33 | 80 | 0.16 | TO220F | ||
| AOTF42S60 | N | MOSFET | 50 | 600 | 30 | 3.8 | 39 | 150 | 40 | 53 | 135 | 0.099 | TO220F |
| APQ12SN60AF | N | MOSFET | 51 | 600 | 30 | 4 | 12 | 150 | 83 | 180 | 0.65 | TO220F | |
| APQ14SN65AF | N | MOSFET | 56 | 650 | 30 | 4 | 14 | 150 | 29.6 | 217 | 0.65 | TO220F | |
| BRF15N65 | N | MOSFET | 73.5 | 650 | 30 | 15 | 150 | 125 | 295 | 0.44 | TO220FL | ||
| BRF20N60 | N | MOSFET | 208 | 600 | 30 | 20 | 150 | 140 | 1280 | 0.19 | TO220FL | ||
| CEF12N65 | N | MOSFET | 60 | 650 | 30 | 12 | 175 | 39 | 76 | 210 | 0.73 | TO220F | |
| CM12N60AF | N | MOSFET | 60 | 600 | 30 | 12 | 150 | 0.65 | TO220FH | ||||
| CM12N65AF | N | MOSFET | 60 | 650 | 30 | 12 | 150 | 0.65 | TO220FH | ||||
| CM20N60F | N | MOSFET | 80 | 600 | 30 | 20 | 150 | 0.45 | TO220FH | ||||
| CS12N60FA9H | N | MOSFET | 55 | 600 | 30 | 4 | 12 | 150 | 46 | 26 | 190 | 0.65 | TO220F |
| CS12N60FA9HD | N | MOSFET | 55 | 600 | 30 | 4 | 12 | 150 | 46 | 19 | 187 | 0.65 | TO220F |
| CS12N60F_A9H | N | MOSFET | 55 | 600 | 30 | 12 | 150 | 26 | 190 | 0.65 | TO220F | ||
| CS12N60F_A9HD | N | MOSFET | 55 | 600 | 30 | 12 | 150 | 19 | 187 | 0.65 | TO220F | ||
| CS12N65FA9H | N | MOSFET | 55 | 650 | 30 | 4 | 12 | 150 | 44 | 18 | 184 | 0.7 | TO220F |
| CS12N65F_A9H | N | MOSFET | 55 | 650 | 30 | 12 | 150 | 18 | 184 | 0.7 | TO220F | ||
| CS16N60F_A9H | N | MOSFET | 70 | 600 | 30 | 16 | 150 | 52 | 18.5 | 0.5 | TO220F | ||
| CS20N60F_A9H | N | MOSFET | 85 | 600 | 30 | 20 | 150 | 73 | 252 | 0.45 | TO220F | ||
| CS20N65F_A9H | N | MOSFET | 85 | 650 | 30 | 20 | 150 | 82 | 225 | 0.5 | TO220F | ||
| F11F60CPM | N | MOSFET | 50 | 600 | 30 | 3.5 | 11 | 150 | 22 | 25 | 60 | 0.3 | TO220F |
| F15F60C3M | N | MOSFET | 55 | 600 | 30 | 3.9 | 15 | 150 | 56 | 42 | 510 | 0.28 | TO220F |
| F16F60CPM | N | MOSFET | 55 | 600 | 30 | 3.5 | 16 | 150 | 33 | 45 | 72 | 0.199 | TO220F |
| F21F60CPM | N | MOSFET | 60 | 600 | 30 | 3.5 | 21 | 150 | 39 | 60 | 100 | 0.165 | TO220F |
| F25F60CPM | N | MOSFET | 70 | 600 | 30 | 3.5 | 25 | 150 | 53 | 70 | 120 | 0.125 | TO220F |
| FMV20N60S1 | N | MOSFET | 53 | 600 | 30 | 3.5 | 20 | 150 | 48 | 40 | 3120 | 0.19 | TO220F |
| FQPF10N60C | N | MOSFET | 50 | 600 | 30 | 4 | 9.5 | 150 | 57 | 0.73 | TO220F | ||
| FQPF10N60CT | N | MOSFET | 50 | 600 | 30 | 4 | 9.5 | 150 | 44 | 69 | 166 | 0.73 | TO220F |
| FQPF10N60CYDTU | N | MOSFET | 50 | 600 | 30 | 4 | 9.5 | 150 | 44 | 69 | 166 | 0.73 | TO220F |
| FQPF12N60C | N | MOSFET | 51 | 600 | 30 | 4 | 12 | 150 | 48 | 0.65 | TO220F | ||
| FQPF12N60CT | N | MOSFET | 51 | 600 | 30 | 4 | 12 | 150 | 48 | 85 | 182 | 0.65 | TO220F |
| GP1M012A060XX | N | MOSFET | 231 | 600 | 30 | 4 | 12 | 150 | 39 | 53 | 185 | 0.65 | TO220 TO220F |
| GP1M016A060XX | N | MOSFET | 290 | 600 | 30 | 4 | 16 | 150 | 53 | 61 | 256 | 0.47 | TO220 TO220F |
| HFS12N60S | N | MOSFET | 51 | 600 | 30 | 4 | 12 | 150 | 38 | 85 | 185 | 0.65 | TO220F |
| MSF10N60 | N | MOSFET | 50 | 600 | 30 | 4 | 9.5 | 150 | 120 | 145 | 0.73 | TO220F | |
| MSF12N60 | N | MOSFET | 54 | 600 | 30 | 4 | 12 | 150 | 85 | 182 | 0.65 | TO220F | |
| MSF12N65 | N | MOSFET | 54 | 650 | 30 | 4 | 12 | 150 | 85 | 182 | 0.65 | TO220F | |
| MSF14N60 | N | MOSFET | 60 | 600 | 30 | 4 | 14 | 150 | 10 | 180 | 0.55 | TO220F | |
| MSF15N60 | N | MOSFET | 53 | 600 | 30 | 4 | 15 | 150 | 78 | 300 | 0.52 | TO220F | |
| MTN10N60FP | N | MOSFET | 50 | 600 | 30 | 10 | 150 | 39 | 46 | 180 | 0.65 | TO220FP | |
| MTN12N60BFP | N | MOSFET | 62.5 | 600 | 30 | 4 | 12 | 150 | 52.8 | 49 | 187 | 0.65 | TO220FP |
| MTN12N60FP | N | MOSFET | 51 | 600 | 30 | 12 | 150 | 48 | 85 | 182 | 0.6 | TO220FP | |
| MTN12N65FP | N | MOSFET | 51 | 650 | 30 | 12 | 150 | 38 | 85 | 185 | 0.6 | TO220FP | |
| MTN14N60FP | N | MOSFET | 60 | 600 | 30 | 14 | 150 | 40 | 30 | 180 | 0.55 | TO220FP | |
| P1260ATF | N | MOSFET | 50 | 600 | 30 | 12 | 150 | 120 | 281 | 0.65 | TO220F | ||
| PFF12N65 | N | MOSFET | 55 | 650 | 30 | 4 | 12 | 150 | 47.5 | 40 | 230 | 0.57 | TO220F |
| PNMTOF650V13 | N | MOSFET | 125 | 650 | 30 | 4 | 13 | 150 | 46 | 56 | 180 | 0.7 | TO220F |
| R6010ANX | N | MOSFET | 50 | 600 | 30 | 10 | 150 | 25 | 30 | 720 | 0.43 | TO220FM | |
| R6018ANX | N | MOSFET | 50 | 600 | 30 | 18 | 150 | 55 | 85 | 1400 | 0.21 | TO220FM | |
| SIF12N60C | N | MOSFET | 225 | 600 | 30 | 12 | 150 | 0.5 | TO220 TO220FP | ||||
| SIF12N65C | N | MOSFET | 225 | 650 | 30 | 12 | 150 | 0.58 | TO220 TO220FP | ||||
| SIF18N65C | N | MOSFET | 65 | 650 | 30 | 18 | 150 | 0.37 | TO220FP | ||||
| SSF12N60F | N | MOSFET | 50 | 600 | 30 | 12 | 150 | 55 | 37.8 | 184 | 0.7 | TO220F | |
| SSS12N60 | N | MOSFET | 250 | 600 | 30 | 12 | 150 | 0.65 | TO220F | ||||
| TK13A60W | N | MOSFET | 50 | 600 | 30 | 4 | 13 | 150 | 0.43 | TO220F | |||
| TMPF12N60 | N | MOSFET | 53 | 600 | 30 | 4 | 12 | 150 | 39 | 53 | 185 | 0.65 | TO220F |
Всего результатов: 73
