8n60c

KHB7D5N60P1 Datasheet (PDF)

1.1. khb7d5n60p1 f1 f2.pdf Size:1323K _kec

KHB7D5N60P1/F1/F2
SEMICONDUCTOR
N CHANNEL MOS FIELD
TECHNICAL DATA
EFFECT TRANSISTOR
General Description
KHB7D0N60P1
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
·VDSS

5.1. khb7d0n65p1 f1 f2.pdf Size:792K _kec

KHB7D0N65P1/F1/F2
SEMICONDUCTOR
N CHANNEL MOS FIELD
TECHNICAL DATA
EFFECT TRANSISTOR
General Description
KHB7D0N65P1
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E DIM MILLIMETERS
G
_
A 9.9 + 0.2
avalanche characteristics. It is mainly suitable for active power factor
B
B 15.95 MAX

5.2. khb7d0n80p1 f1.pdf Size:1234K _kec

KHB7D0N80P1/F1
SEMICONDUCTOR
N CHANNEL MOS FIELD
TECHNICAL DATA
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
·VDSS=800V, ID=7A
·Drain-Source ON

FQPF5N50C Datasheet (PDF)

1.1. fqpf5n50cf fqpf5n50cftu.pdf Size:657K _fairchild_semi

TM
FRFET
FQPF5N50CF
500V N-Channel MOSFET
Features Description
• 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge ( typical 18nC)
DMOS technology.
• Low Crss ( typical 15pF)
This advanced technology has been especially tailored to mini-
• F

1.2. fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf Size:879K _fairchild_semi

TM
QFET
FQP5N50C/FQPF5N50C
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC)
planar stripe, DMOS technology.
• Low Crss ( typical 15pF)
This advanced technology has been especially tailored to

 2.1. fqpf5n50.pdf Size:750K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

500V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 3.0A, 500V, RDS(on) = 1.8Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 8.5 pF)
This advanced technology has been

FQU5N60C Datasheet (PDF)

1.1. fqd5n60ctf fqd5n60ctm fqd5n60c fqu5n60c fqu5n60ctu.pdf Size:636K _fairchild_semi

October 2008
QFET
FQD5N60C / FQU5N60C
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.5 pF)
This advanced technology has been especia

5.1. fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

October 2008
QFET
FQD5N20L / FQU5N20L
200V LOGIC N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.0 pF)
This advanced technology is especia

5.2. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD5N20 / FQU5N20
200V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.0 pF)
This advanced technology

 5.3. fqd5n40tf fqd5n40tm fqu5n40tu.pdf Size:730K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD5N40 / FQU5N40
400V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 3.4A, 400V, RDS(on) = 1.6Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 7.0 pF)
This advanced technology

5.4. fqd5n30 fqu5n30.pdf Size:757K _fairchild_semi

May 2000
TM
QFET
QFET
QFET
QFET
FQD5N30 / FQU5N30
300V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 4.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 9.5 pF)
This advanced technology h

 5.5. fqd5n50tf fqu5n50tu.pdf Size:768K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

500V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 3.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 8.5 pF)
This advanced technology

5.6. fqu5n40 fqd5n40.pdf Size:735K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD5N40 / FQU5N40
400V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 3.4A, 400V, RDS(on) = 1.6Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 7.0 pF)
This advanced technology

5.7. fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf Size:664K _fairchild_semi

October 2008
QFET
FQD5N50C / FQU5N50C
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC)
planar stripe, DMOS technology.
• Low Crss ( typical 15pF)
This advanced technology has been especially

FQB8N60C Datasheet (PDF)

1.1. fqb8n60cf fqb8n60cftm.pdf Size:1032K _fairchild_semi

October 2008
TM
QFET
FQB8N60CF
600V N-Channel MOSFET
Features Description
• 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge ( typical 28nC)
DMOS technology.
• Low Crss ( typical 12pF)
This advanced technology has been especially tailored to

1.2. fqb8n60c fqi8n60c fqi8n60ctu.pdf Size:965K _fairchild_semi

October 2008
QFET
FQB8N60C / FQI8N60C
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 12 pF)
This advanced technology has been especiall

 5.1. fqb8n25tm.pdf Size:594K _fairchild_semi

May 2000
TM
QFET
QFET
QFET
QFET
FQB8N25 / FQI8N25
250V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 11 pF)
This advanced technology has

5.2. fqb8n90ctm.pdf Size:430K _fairchild_semi

December 2013
FQB8N90C
N-Channel QFET MOSFET
900 V, 6.3 A, 1.9 Ω
Description Features
These N-Channel enhancement mode power field effect • 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, planar
• Low Gate Charge (Typ. 35 nC)
stripe, DMOS technology. This advanced technology has been
• Low Crss (Typ. 12 pF)
especia

WFF8N60 Datasheet (PDF)

1.1. wff8n60b.pdf Size:709K _winsemi

WFF8N60B
WFF8N60B
WFF8N60B
WFF8N60B
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 7.5A,600V,R (Max1.2Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 28nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage (V =4000V AC)
ISO
� Maximum Junction Temperature Range(150℃)
General

1.2. wff8n60.pdf Size:696K _winsemi

WFF8N60
WFF8N60
WFF8N60
WFF8N60
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 7.5A,600V,R (Max1.2Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 28nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage (V =4000V AC)
ISO
� Maximum Junction Temperature Range(150℃)
General Desc

 4.1. wff8n65b.pdf Size:695K _winsemi

WFF8N65B
WFF8N65B
WFF8N65B
WFF8N65B
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 7.5A,650V,R (Max1.3Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 25nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage (V =4000V AC)
ISO
� Maximum Junction Temperature Range(150℃)
General

FQP3N60C Datasheet (PDF)

1.1. fqp3n60c.pdf Size:741K _fairchild_semi

January 2006
TM
QFET
FQP3N60C
600V N-Channel MOSFET
Features Description
• 3A, 600V, RDS(on) = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
• Low gate charge ( typical 10.5 nC)
stripe, DMOS technology.
• Low Crss ( typical 5 pF)
This advanced technology has been especially tailored to

3.1. fqp3n60.pdf Size:567K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQP3N60
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.5 pF)
This advanced technology has been es

 5.1. fqp3n40.pdf Size:707K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

400V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 2.5A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 4.2 pF)
This advanced technology has been

5.2. fqp3n80.pdf Size:654K _fairchild_semi

September 2000
TM
QFET
FQP3N80
800V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 3.0A, 800V, RDS(on) = 5.0Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 7.0 pF)
This advanced technology has been especially tailo

 5.3. fqp3n50c fqpf3n50c.pdf Size:1269K _fairchild_semi


QFET
FQP3N50C/FQPF3N50C
500V N-Channel MOSFET
Features Description
• 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge ( typical 10 nC )
DMOS technology.
• Low Crss ( typical 8.5 pF)
This advanced technology has been especially tailored to

5.4. fqp3n25.pdf Size:612K _fairchild_semi

November 2000
TM
QFET
QFET
QFET
QFET
FQP3N25
250V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 4.7 pF)
This advanced technology has bee

 5.5. fqp3n30.pdf Size:708K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

300V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 3.2A, 300V, RDS(on) = 2.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.0 pF)
This advanced technology has been

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TM
QFET
FQP3N80C/FQPF3N80C
800V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 3.0A, 800V, RDS(on) = 4.8Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.5 pF)
This advanced technology has been especially tailored t

5.7. fqp3n90.pdf Size:689K _fairchild_semi

September 2000
TM
QFET
QFET
QFET
QFET
FQP3N90
900V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 3.6A, 900V, RDS(on) = 4.25 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 8.0 pF)
This advanced technology has

5.8. fqp3n50c fqpf3n50c.pdf Size:1267K _fairchild_semi


QFET
FQP3N50C/FQPF3N50C
500V N-Channel MOSFET
Features Description
• 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge ( typical 10 nC )
DMOS technology.
• Low Crss ( typical 8.5 pF)
This advanced technology has been especially tailored to

FQU5N60C MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQU5N60C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 49
W

Предельно допустимое напряжение сток-исток (Uds): 600
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Максимально допустимый постоянный ток стока (Id): 2.8
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 15
nC

Сопротивление сток-исток открытого транзистора (Rds): 2.5
Ohm

Тип корпуса: TO251, IPAK

FQU5N60C
Datasheet (PDF)

1.1. fqd5n60ctf fqd5n60ctm fqd5n60c fqu5n60c fqu5n60ctu.pdf Size:636K _fairchild_semi

October 2008
QFET
FQD5N60C / FQU5N60C
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.5 pF)
This advanced technology has been especia

5.1. fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

October 2008
QFET
FQD5N20L / FQU5N20L
200V LOGIC N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.0 pF)
This advanced technology is especia

5.2. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD5N20 / FQU5N20
200V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.0 pF)
This advanced technology

 5.3. fqd5n40tf fqd5n40tm fqu5n40tu.pdf Size:730K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD5N40 / FQU5N40
400V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 3.4A, 400V, RDS(on) = 1.6Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 7.0 pF)
This advanced technology

5.4. fqd5n30 fqu5n30.pdf Size:757K _fairchild_semi

May 2000
TM
QFET
QFET
QFET
QFET
FQD5N30 / FQU5N30
300V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 4.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 9.5 pF)
This advanced technology h

 5.5. fqd5n50tf fqu5n50tu.pdf Size:768K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

500V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 3.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 8.5 pF)
This advanced technology

5.6. fqu5n40 fqd5n40.pdf Size:735K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD5N40 / FQU5N40
400V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 3.4A, 400V, RDS(on) = 1.6Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 7.0 pF)
This advanced technology

5.7. fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf Size:664K _fairchild_semi

October 2008
QFET
FQD5N50C / FQU5N50C
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC)
planar stripe, DMOS technology.
• Low Crss ( typical 15pF)
This advanced technology has been especially

Другие MOSFET… FQU2N100
, FQU2N60C
, FDMC8030
, FQU2N90TU_AM002
, FQU3N50C
, FQU4N50TU_WS
, FQU5N40
, FDMC7582
, IRF830
, FDMQ8403
, FQU5P20
, FQU8P10
, FQU9N25
, HUF75542P3
, HUF75631S3S
, FDB86135
, HUF75639S3
.

SIF4N60C Datasheet (PDF)

1.1. sif4n60c.pdf Size:379K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N- MOS / N-CHANNEL POWER MOSFET SIF4N60C
N- MOS / N-CHANNEL POWER MOSFET SIF4N60C
N- MOS / N-CHANN

1.2. sif4n60c 1.pdf Size:382K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N- MOS / N-CHANNEL POWER MOSFET SIF4N60C
N- MOS / N-CHANNEL POWER MOSFET SIF4N60C
N- MOS / N-CHANN

 3.1. sif4n60d 1.pdf Size:376K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N- MOS / N-CHANNEL POWER MOSFET SIF4N60D
N- MOS / N-CHANNEL POWER MOSFET SIF4N60D
N- MOS / N-CHANN

3.2. sif4n60d.pdf Size:380K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N- MOS / N-CHANNEL POWER MOSFET SIF4N60D
N- MOS / N-CHANNEL POWER MOSFET SIF4N60D
N- MOS / N-CHANN

FQPF8N60C Datasheet (PDF)

1.1. fqpf8n60cf.pdf Size:750K _fairchild_semi

February 2006
TM
FRFET
FQPF8N60CF
600V N-Channel MOSFET
Features Description
• 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect
• Low gate charge ( typical 28 nC) transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low Crss ( typical 12 pF)
This advanced technology has been especially tailored t

1.2. fqpf8n60ct fqpf8n60cydtu.pdf Size:925K _fairchild_semi


QFET
FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 12 pF)
This advanced technology has been especially tailored to

 1.3. fqp8n60c fqpf8n60c.pdf Size:927K _fairchild_semi


QFET
FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 12 pF)
This advanced technology has been especially tailored to

SIF5N60C Datasheet (PDF)

1.1. sif5n60c.pdf Size:539K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N60C
N- MOS / N-CHANNEL POWER MOSFET SIF5N60C
N

1.2. sif5n60c 1.pdf Size:474K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N- MOS / N-CHANNEL POWER MOSFET SIF5N60C
N- MOS / N-CHANNEL POWER MOSFET SIF5N60C
N- MOS / N-CHANN

 4.1. sif5n65c.pdf Size:474K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N- MOS / N-CHANNEL POWER MOSFET SIF5N65C
N- MOS / N-CHANNEL POWER MOSFET SIF5N65C
N- MOS / N-CHANN

Результаты подбора MOSFET (поиска аналога)

Маркировка	Pol	Struct	Pd	Uds	Ugs	Ugs(th)	Id	Tj	Qg	Tr	Cd	Rds	Caps
11N90	N	MOSFET	215	900	30		11	150		130	215	0.91	TO3P TO3PN TO220 TO220F1
12N90	N	MOSFET	225	900	30		12	150		130	190	0.8	TO230 TO220F1
2SK1808	N	MOSFET	35	900			4					3	TO220FM
2SK1930	N	MOSFET	80	1000			4		60			3.8	TO220FL SM
2SK1985	N	MOSFET	50	900	30	3.5	5	150		15	100	2.8	TO220F
2SK1985-01MR	N	MOSFET	50	900	30		5	150		15	100	2.8	TO220F
2SK2527-01MR	N	MOSFET	40	900	30		5	150		35	95	3.6	TO220F
2SK2651-01MR	N	MOSFET	50	900	30		6	150		80	130	1.87	TO220F15
2SK3255	N	MOSFET	35	900	30		5	150		43	115	2.8	TO220FI
2SK3532	N	MOSFET	70	900	30		6	150		8	100	1.92	TO220F
2SK3532-01MR	N	MOSFET	70	900	30		6	150		8	100	2.5	TO220F
2SK3534-01MR	N	MOSFET	80	900	30		7	150		8	115	2	TO220F
2SK3679-01MR	N	MOSFET	95	900	30		9	150		12	140	1.58	TO220F
2SK4005-01MR	N	MOSFET	70	900	30		6	150		5.6	100	2.5	TO220F
2SK846	N	MOSFET	45	900	20	4	5	150				4	TO220F
4N90	N	MOSFET	140	900	30		4	150		50	65	3.5	TO220F TO220F1 TO220 TO252 TO262
5N90	N	MOSFET	240	900	30		5	150		65	110	2.25	TO3P TO220F1 TO220 TO262
5N90AF	N	MOSFET	38	900	30	5	5	150	31	65	110	2.8	TO220F
6N90	N	MOSFET	167	900	30		6.2	150		90	110	1.85	TO220F1 TO220 TO262
6N90AF	N	MOSFET	56	900	30	5	6	150	30	90	110	2.3	TO220F
7N90	N	MOSFET	240	900	30		7	150		80	140	1.5	TO3P TO220F1 TO220 TO262
7N90AF	N	MOSFET	32	900	30	5	7	150	40	80	140	1.8	TO220F
9N90	N	MOSFET	240	900	30		9	150		120	175	1.05	TO3P TO247 TO220F TO220F1 TO220F2
9N90L-TF1	N	MOSFET	36	900	30	5	9	150	45	120	175	1.4	TO220F1
AOTF10N90	N	MOSFET	50	900	30	4.5	10	150		105	190	0.98	TO220F
AOTF4N90	N	MOSFET	37	900	30	4.5	4	150		46	52	3.6	TO220F
AOTF5N100	N	MOSFET	42	1000	30	4.5	4	150		40	62	4.2	TO220F
AOTF6N90	N	MOSFET	50	900	30	4.5	6	150		58	82	2.2	TO220F
AOTF9N90	N	MOSFET	50	900	30	4.5	9	150		80	152	1.3	TO220F
BFL4001	N	MOSFET	37	900	30		4.1	150	44			2.1	TO220F
BFL4026	N	MOSFET	35	900	30		5	150	33			2.8	TO220FI
CEF1195	N	MOSFET	50	900	30		5	150	30	21.5	130	2.75	TO220F
CS5N90FA9H	N	MOSFET	45	900	30	4	5	150	31	28	100	2.5	TO220F
CS5N90F_A9H	N	MOSFET	45	900	30		5	150		28	100	2.5	TO220F
CS6N90FA9H	N	MOSFET	48	900	30	4	6	150	34	42	111	2.3	TO220F
CS6N90F_A9H	N	MOSFET	48	900	30		6	150		42	111	2.3	TO220F
CS8N90FA9HD	N	MOSFET	57	900	30	4	8	150	47	11	152	1.5	TO220F
CS8N90F_A9	N	MOSFET	57	900	30		8	150		41	146	1.5	TO220F
CS8N90F_A9HD	N	MOSFET	57	900	30		8	150		11	152	1.5	TO220F
CS9N90FA9D	N	MOSFET	60	900	30	4	9	150	62	8	205	1.3	TO220F
CS9N90F_A9D	N	MOSFET	60	900	30		9	150		8	205	1.3	TO220F
F5F90HVX2	N	MOSFET	40	900	30	3.5	5	150			105	2.8	TO220F
FMV06N90E	N	MOSFET	48	900	30	4.5	6	150	33	32	95	2.5	TO220F
FMV09N90E	N	MOSFET	85	900	30	4.5	9	150	50	30	150	1.4	TO220F
FMV11N90E	N	MOSFET	120	900	30	4.5	11	150	60	32	200	1	TO220F
FQPF4N90C	N	MOSFET	47	900	30	5	4	150	17			4.2	TO220F
FQPF6N90C	N	MOSFET	56	900	30	5	6	150	30			2.3	TO220F
FQPF6N90CT	N	MOSFET	56	900	30	5	6	150	30	90	110	2.3	TO220F
FQPF8N90C	N	MOSFET	60	900	30	5	6	150	35			1.9	TO220F
FQPF9N90C	N	MOSFET	68	900	30	5	8	150	45			1.4	TO220F
FQPF9N90CT	N	MOSFET	68	900	30	5	8	150	45	120	175	1.4	TO220F
GP1M004A090XX	N	MOSFET	123	900	30	4	4	150	25	38	80	4	TO220 TO220F
GP1M007A090XX	N	MOSFET	250	900	30	4	7	150	49	38	133	1.9	TO220 TO220F
GP1M009A090XX	N	MOSFET	290	900	30	4	9	150	65	49	184	1.4	TO220 TO220F
GP2M009A090FG	N	MOSFET	89	900	30	4	9	150	72	97	192	1.4	TO220F
HFS4N90	N	MOSFET	47	900	30	4.5	4	150	30	80	100	3	TO220F
HFS6N90	N	MOSFET	56	900	30	4.5	6	150	35	120	110	2.4	TO220F
IPA90R1K0C3	N	MOSFET	32	900	20	3.5	5.7	150	34	20	42	1	TO220FP
IPA90R340C3	N	MOSFET	35	900	20	3.5	15	150	94	20	120	0.34	TO220FP
IPA90R500C3	N	MOSFET	34	900	20	3.5	11	150	68	20	83	0.5	TO220FP
IPA90R800C3	N	MOSFET	33	900	20	3.5	6.9	150	42	20	52	0.8	TO220FP
MSF9N90	N	MOSFET	280	900	30	5	9	150		130	180	1.4	TO220F
P0690ATF	N	MOSFET	52	900	30		6	150		190	89	2.35	TO220F
P0690ATFS	N	MOSFET	52	900	30		6	150		190	89	2.35	TO220FS
SM9A01NSFP	N	MOSFET	34.7	900	30	4.5	12	150	56	29	950	0.48	TO220FP
SMK0990FD	N	MOSFET	48	900	30		9	150	52	120	175	1.4	TO220F
STF10N105K5	N	MOSFET	30	1050	30	5	6	150	21.5	8	30	1.3	TO220FP
STF10N95K5	N	MOSFET	30	950	30	5	8	150	22	14	50	0.8	TO220FP
STF12N120K5	N	MOSFET	40	1200	30	5	12	150	44.2	11	110	0.69	TO220FP
STF13N95K3	N	MOSFET	40	950	30	5	10	150	51			0.85	TO220FP
STF15N95K5	N	MOSFET	30	950	30	5	12	150	30	20	65	0.5	TO220FP
STF20N95K5	N	MOSFET	40	950	30	5	15.5	150	40			0.33	TO220FP
STF21N90K5	N	MOSFET	40	900	30	5	17	150	43			0.299	TO220FP
STF6N95K5	N	MOSFET	25	950	30	5	9	150				1.25	TO220FP
STF7N105K5	N	MOSFET	25	1050	30	5	4	150	17	7	40	2	TO220FP
STF7N95K3	N	MOSFET	35	950	30	5	7.2	150	34			1.35	TO220FP
STF8NK100Z	N	MOSFET	40	1000	30	4.5	6.5	150	73			1.85	TO220FP
STF9NK90Z	N	MOSFET	40	900	30	4.5	8	150	72			1.3	TO220FP
STP6NK90ZFP	N	MOSFET	30	900	30	4.5	5.8	150	46.5	45	130	2	TO220FP
TK5A90E	N	MOSFET	40	900	30	4	4.5	150	20	25	75	3.1	TO220F
TMPF4N90	N	MOSFET	38.7	900	30	4	4	150	25	38	80	4	TO220F
TMPF7N90	N	MOSFET	40.3	900	30	4	7	150	49	38	133	1.9	TO220F
TMPF9N90	N	MOSFET	48	900	30	4	9	150	65	49	184	1.4	TO220F
WFF9N90	N	MOSFET	68	900	30	5	9	150	58	25	190	1.35	TO220F

Всего результатов: 84