4435 mosfet. datasheet pdf. equivalent

Содержание:

FDS4435 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
FDS4435 Datasheet (PDF)
FDS4435 Datasheet (PDF)
FDS4435A Datasheet (PDF)
AO4438 Datasheet (PDF)
AO4437 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
AO4437 Datasheet (PDF)
AO4438 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
AO4438 Datasheet (PDF)
AO4437 Datasheet (PDF)
AO4433 Datasheet (PDF)
AO4407 Datasheet (PDF)

FDS4435 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDS4435

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 2.5
W

Предельно допустимое напряжение сток-исток (Uds): 30
V

Предельно допустимое напряжение затвор-исток (Ugs): 25
V

Пороговое напряжение включения Ugs(th): 3
V

Максимально допустимый постоянный ток стока (Id): 8.8
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 24
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.02
Ohm

Тип корпуса: SO8

FDS4435
Datasheet (PDF)

Высоковольтный полевой транзистор irfp450. моп, mosfet. свойства, параметры, применение, данные, datasheet. irfp 450

1.1. fds4435bz.pdf Size:225K _fairchild_semi

April 2009
FDS4435BZ
P-Channel PowerTrench MOSFET
-30V, -8.8A, 20m
Features General Description
Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild
Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench process that has
Extended VGSS range (-25V) for battery applications been especially tailored to minimi

1.2. fds4435.pdf Size:64K _fairchild_semi

October 2001
FDS4435
30V P-Channel PowerTrench MOSFET
General Description Features
This P MOSFET is a rugged gate version of
-Channel
• –8.8 A, –30 V R = 20 mΩ @ V = –10 V
DS(ON) GS
Fairchild Semiconductor’s advanced PowerTrench
R = 35 mΩ @ V = –4.5 V
DS(ON) GS
process. It has been optimized for power management
applications requiring a wide range of gave

1.3. fds4435a.pdf Size:172K _fairchild_semi

October 2001
FDS4435A
P-Channel Logic Level PowerTrench MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced using • -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V
Fairchild Semiconductor’s advanced PowerTrench process
RDS(ON) = 0.025 W @ VGS = -4.5 V
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charg

1.4. fds4435bz f085.pdf Size:296K _fairchild_semi

July 2009
FDS4435BZ_F085
P-Channel PowerTrench MOSFET
-30V, -8.8A, 20m
Features General Description
Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild
Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench process that has
Extended VGSS range (-25V) for battery applications been especially tailored to mi

Другие MOSFET… FDR836P
, FDR838P
, FDR8508P
, FDR856P
, FDR858P
, FDS3570
, FDS3580
, FDS4410
, IRFB3306
, FDS4435A
, FDS4953
, FDS5680
, FDS5690
, FDS6375
, FDS6570A
, FDS6575
, FDS6576
.

FDS4435 Datasheet (PDF)

Irfz44n mosfet. datasheet pdf. equivalent

1.1. fds4435bz.pdf Size:225K _fairchild_semi

1.2. fds4435.pdf Size:64K _fairchild_semi

1.3. fds4435a.pdf Size:172K _fairchild_semi

1.4. fds4435bz f085.pdf Size:296K _fairchild_semi

FDS4435A Datasheet (PDF)

Irf640 mosfet. datasheet pdf. equivalent

1.1. fds4435a.pdf Size:172K _fairchild_semi

3.1. fds4435bz.pdf Size:225K _fairchild_semi

3.2. fds4435.pdf Size:64K _fairchild_semi

3.3. fds4435bz f085.pdf Size:296K _fairchild_semi

AO4438 Datasheet (PDF)

1.1. ao4438.pdf Size:245K _aosemi

AO4438
60V N-Channel MOSFET
General Description Product Summary
The AO4438 uses advanced trench technology to VDS (V) = 60V
provide excellent RDS(ON) and low gate charge. This ID = 8.2A (VGS = 10V)
device is suitable for use as a load switch or in PWM
RDS(ON) 1.2. ao4438.pdf Size:1233K _kexin

SMD Type MOSFET
N-Channel MOSFET
AO4438 (KO4438)
SOP-8
■ Features
● VDS (V) = 60V
● ID = 8.2 A (VGS = 10V)
● RDS(ON) ＜ 22mΩ (VGS = 10V)
1.50 0.15
● RDS(ON) ＜ 27mΩ (VGS = 4.5V)
1 Source 5 Drain
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 60
V
Gate

5.1. ao4433.pdf Size:185K _update

AO4433
30V P-Channel MOSFET
General Description Product Summary
The AO4433 uses advanced trench technology to VDS (V) = -30V
provide excellent RDS(ON) and ultra-low low gate charge
ID = -11 A (VGS = -20V)
with a 25V gate rating. This device is suitable for use
RDS(ON) 5.2. ao4430.pdf Size:279K _aosemi

AO4430
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4430/L uses advanced trench technology to provide
VDS (V) = 30V
excellent RDS(ON), shoot-through immunity, body diode
ID = 18A (VGS = 10V)
characteristics and ultra-low gate resistance. This device is
RDS(ON)

5.3. ao4435.pdf Size:190K _aosemi

AO4435
30V P-Channel MOSFET
General Description Product Summary
The AO4435 uses advanced trench technology to VDS = -30V
provide excellent RDS(ON), and ultra-low low gate charge
ID = -10.5A (VGS = -20V)
with a 25V gate rating. This device is suitable for use as
RDS(ON) 5.4. ao4437.pdf Size:164K _aosemi

AO4437
12V P-Channel MOSFET
General Description Product Summary
The AO4437 uses advanced trench technology to provide VDS (V) = -12V
excellent RDS(ON), low gate charge and operation with gate
ID = -11 A (VGS = -4.5V)
voltages as low as 1.8V. This device is suitable for use as a
RDS(ON)

5.5. ao4433.pdf Size:185K _aosemi

SMD Type MOSFET
N-Channel MOSFET
AO4430 (KO4430)
SOP-8
■ Features
● VDS (V) = 30V
● ID = 18 A (VGS = 10V)
● RDS(ON) ＜ 5.5mΩ (VGS = 10V)
1.50 0.15
● RDS(ON) ＜ 7.5mΩ (VGS = 4.5V)
1 Source 5 Drain
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30
V
Gat

5.7. ao4435.pdf Size:1089K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO4435 (KO4435)
SOP-8
■ Features
● VDS (V) =-30V
● ID =-10.5 A (VGS =-20V)
1.50 0.15
● RDS(ON) ＜ 14mΩ (VGS =-20V)
● RDS(ON) ＜ 18mΩ (VGS =-10V)
1 Source 5 Drain
● RDS(ON) ＜ 36mΩ (VGS =-5V)
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Dr

5.8. ao4437.pdf Size:1491K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO4437 (KO4437)
SOP-8
■ Features
● VDS (V) =-12V
● ID =-11 A (VGS =-4.5V)
● RDS(ON) ＜ 16mΩ (VGS =-4.5V) 0.15
1.50
● RDS(ON) ＜ 20mΩ (VGS =-2.5V)
● RDS(ON) ＜ 25mΩ (VGS =-1.8V)
1 Source 5 Drain
● ESD Rating: 4KV HBM
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Par

AO4437 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AO4437

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 3
W

Предельно допустимое напряжение сток-исток (Uds): 12
V

Предельно допустимое напряжение затвор-исток (Ugs): 8
V

Пороговое напряжение включения Ugs(th): 1
V

Максимально допустимый постоянный ток стока (Id): 11
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 37
nC

Время нарастания (tr): 43
ns

Выходная емкость (Cd): 910
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0124
Ohm

Тип корпуса: SO-8

AO4437
Datasheet (PDF)

1.1. ao4437.pdf Size:164K _aosemi

5.1. ao4433.pdf Size:185K _update

5.3. ao4435.pdf Size:190K _aosemi

5.5. ao4433.pdf Size:185K _aosemi

5.7. ao4435.pdf Size:1089K _kexin

5.8. ao4438.pdf Size:1233K _kexin

Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.

AO4438 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AO4438

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 3.1
W

Предельно допустимое напряжение сток-исток (Uds): 60
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 3
V

Максимально допустимый постоянный ток стока (Id): 8.2
A

Максимальная температура канала (Tj): 150
°C

Время нарастания (tr): 5.5
ns

Выходная емкость (Cd): 155
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.022
Ohm

Тип корпуса: SO-8

AO4438
Datasheet (PDF)

1.1. ao4438.pdf Size:245K _aosemi

5.1. ao4433.pdf Size:185K _update

5.3. ao4435.pdf Size:190K _aosemi

5.5. ao4433.pdf Size:185K _aosemi

5.7. ao4435.pdf Size:1089K _kexin

5.8. ao4437.pdf Size:1491K _kexin

AO4437 Datasheet (PDF)

1.1. ao4437.pdf Size:164K _aosemi

5.1. ao4433.pdf Size:185K _update

5.3. ao4435.pdf Size:190K _aosemi

5.5. ao4433.pdf Size:185K _aosemi

5.7. ao4435.pdf Size:1089K _kexin

5.8. ao4438.pdf Size:1233K _kexin

AO4433 Datasheet (PDF)

1.1. ao4433.pdf Size:185K _update

5.1. ao4430.pdf Size:279K _aosemi

5.3. ao4437.pdf Size:164K _aosemi

5.5. ao4430.pdf Size:1180K _kexin

5.6. ao4435.pdf Size:1089K _kexin

5.7. ao4437.pdf Size:1491K _kexin

5.8. ao4438.pdf Size:1233K _kexin

AO4407 Datasheet (PDF)

1.1. ao4407a.pdf Size:207K _aosemi

AO4407A
30V P-Channel MOSFET
General Description Product Summary
The AO4407A uses advanced trench technology to VDS = -30V
provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V)
with a 25V gate rating. This device is suitable for use as RDS(ON) 1.2. ao4407.pdf Size:340K _aosemi

AO4407
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
The AO4407 combines advanced trench MOSFET
technology with a low resistance package to provide
ID (at VGS=-20V) -12A
extremely low RDS(ON). This device is ideal for load switch
RDS(ON) (at VGS=-20V)

1.3. ao4407a.pdf Size:1643K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO4407A (KO4407A)
SOP-8
■ Features
● VDS (V) =-30V
● ID =-12 A (VGS =-20V)
1.50 0.15
● RDS(ON) ＜ 11mΩ (VGS =-20V)
● RDS(ON) ＜ 13mΩ (VGS =-10V)
1 Source 5 Drain
● RDS(ON) ＜ 17mΩ (VGS =-6V)
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Dr

1.4. ao4407.pdf Size:2315K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO4407
SOP-8
■ Features
● VDS (V) =-30V
● ID =-12 A (VGS =-20V)
1.50 0.15
● RDS(ON) ＜ 13mΩ (VGS =-20V)
D
● RDS(ON) ＜ 14mΩ (VGS =-10V) D
1 Source 5 Drain
● RDS(ON) ＜ 30mΩ (VGS =-5V)
6 Drain
2 Source
7 Drain
3 Source
8 Drain
4 Gate
G
G
S
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drai