Irfz48n mosfet. datasheet pdf. equivalent
Содержание:
Результаты подбора MOSFET (поиска аналога)
| Маркировка | Pol | Struct | Pd | Uds | Ugs | Ugs(th) | Id | Tj | Qg | Tr | Cd | Rds | Caps |
| 2SK3270-01 | N | MOSFET | 135 | 60 | 30 | 80 | 150 | 0.0065 | TO220AB | ||||
| AM90N06-15P | N | MOSFET | 300 | 60 | 20 | 1 | 90 | 175 | 49 | 10 | 290 | 0.0105 | TO220AB |
| AUIRF1018E | N | MOSFET | 110 | 60 | 20 | 4 | 79 | 175 | 46 | 0.0084 | TO220AB | ||
| AUIRFZ48N | N | MOSFET | 94 | 55 | 20 | 4 | 64 | 175 | 42 | 0.014 | TO220AB | ||
| AUIRL3705Z | N | MOSFET | 130 | 55 | 16 | 3 | 86 | 175 | 40 | 0.008 | TO220AB | ||
| BUK7506-55A | N | MOSFET | 300 | 55 | 20 | 4 | 75 | 175 | 0.0063 | TO220AB | |||
| BUK7507-55B | N | MOSFET | 203 | 55 | 20 | 4 | 75 | 175 | 53 | 0.0071 | TO220AB | ||
| BUK7509-75A | N | MOSFET | 230 | 75 | 20 | 4 | 75 | 175 | 0.009 | TO220AB | |||
| BUK7511-55A | N | MOSFET | 166 | 55 | 20 | 4 | 75 | 175 | 0.011 | TO220AB | |||
| BUK7511-55B | N | MOSFET | 157 | 55 | 20 | 4 | 75 | 175 | 37 | 0.011 | TO220AB | ||
| BUK7513-75B | N | MOSFET | 157 | 75 | 75 | 40 | 0.013 | TO220AB | |||||
| BUK7514-55A | N | MOSFET | 166 | 55 | 20 | 4 | 73 | 175 | 0.014 | TO220AB | |||
| BUK7514-60E | N | MOSFET | 96 | 60 | 20 | 4 | 58 | 175 | 22.9 | 9.2 | 197 | 0.013 | TO220AB |
| BUK7515-100A | N | MOSFET | 300 | 100 | 20 | 4 | 75 | 175 | 0.015 | TO220AB | |||
| BUK7516-55A | N | MOSFET | 138 | 55 | 20 | 4 | 65.7 | 175 | 0.016 | TO220AB | |||
| BUK9506-55A | N | MOSFET | 300 | 55 | 15 | 2 | 154 | 175 | 180 | 1000 | 0.0063 | TO220AB | |
| BUK9508-55B | N | MOSFET | 203 | 55 | 15 | 2 | 75 | 175 | 45 | 0.007 | TO220AB | ||
| BUK9509-75A | N | MOSFET | 230 | 75 | 10 | 2 | 75 | 175 | 0.0085 | TO220AB | |||
| BUK9511-55A | N | MOSFET | 166 | 55 | 10 | 2 | 75 | 175 | 0.01 | TO220AB | |||
| BUK9512-55B | N | MOSFET | 157 | 55 | 15 | 2 | 75 | 175 | 31 | 0.01 | TO220AB | ||
| BUK9514-55A | N | MOSFET | 149 | 55 | 10 | 2 | 73 | 175 | 0.013 | TO220AB | |||
| BUK9515-100A | N | MOSFET | 230 | 100 | 10 | 2 | 75 | 175 | 0.0144 | TO220AB | |||
| BUK9515-60E | N | MOSFET | 96 | 60 | 10 | 2.1 | 54 | 175 | 20.5 | 22.4 | 196 | 0.015 | TO220AB |
| BUK9516 | N | MOSFET | 138 | 55 | 10 | 2 | 66 | 175 | 130 | 347 | 0.015 | TO220AB | |
| BUK9516-55A | N | MOSFET | 138 | 55 | 10 | 2 | 66 | 175 | 0.015 | TO220AB | |||
| BUK9516-75B | N | MOSFET | 157 | 75 | 15 | 2 | 67 | 175 | 35 | 0.014 | TO220AB | ||
| BUK9518-55A | N | MOSFET | 136 | 55 | 15 | 2 | 61 | 175 | 0.016 | TO220AB | |||
| CS3205_A8 | N | MOSFET | 230 | 60 | 20 | 120 | 175 | 82 | 750 | 0.008 | TO220AB | ||
| CS3205_B8 | N | MOSFET | 230 | 55 | 20 | 110 | 175 | 51 | 903 | 0.0085 | TO220AB | ||
| CS4145 | N | MOSFET | 200 | 60 | 20 | 84 | 175 | 75 | 375 | 0.01 | TO220AB | ||
| CS75N75_B8H | N | MOSFET | 230 | 75 | 20 | 100 | 175 | 57 | 720 | 0.0115 | TO220AB | ||
| CSZ44V-1 | N | MOSFET | 150 | 60 | 20 | 55 | 175 | 27 | 280 | 0.01 | TO220AB | ||
| FDP10AN06A0 | N | MOSFET | 135 | 60 | 20 | 4 | 75 | 175 | 128 | 340 | 0.0105 | TO220AB | |
| FDP13AN06A0 | N | MOSFET | 115 | 60 | 20 | 4 | 62 | 175 | 96 | 260 | 0.0135 | TO220AB | |
| FDP14AN06LA0 | N | MOSFET | 125 | 60 | 20 | 3 | 67 | 175 | 169 | 270 | 0.0116 | TO220AB | |
| FDP5500 | N | MOSFET | 375 | 55 | 20 | 4 | 80 | 175 | 34 | 1310 | 0.007 | TO220AB | |
| HY110N06T | N | MOSFET | 125 | 55 | 20 | 3 | 110 | 175 | 12.6 | 385 | 0.0055 | TO220AB | |
| HY80N075T | N | MOSFET | 125 | 75 | 20 | 4 | 80 | 175 | 18.2 | 420 | 0.008 | TO220AB | |
| HY80N07T | N | MOSFET | 96.7 | 65 | 20 | 4 | 80 | 175 | 22.6 | 660 | 0.0072 | TO220AB | |
| IRF1018E | N | MOSFET | 110 | 60 | 20 | 79 | 46 | 0.0084 | TO220AB | ||||
| IRF1018EPBF | N | MOSFET | 110 | 60 | 20 | 4 | 79 | 175 | 46 | 35 | 270 | 0.0084 | TO220AB |
| IRF4410A | N | MOSFET | 230 | 100 | 20 | 4 | 97 | 175 | 52 | 430 | 0.009 | TO220AB | |
| IRFB7545 | N | MOSFET | 125 | 60 | 20 | 3.7 | 95 | 175 | 72 | 370 | 0.0059 | TO220AB | |
| IRFB7546 | N | MOSFET | 99 | 60 | 20 | 3.7 | 75 | 175 | 51 | 280 | 0.0073 | TO220AB | |
| IRFB7740 | N | MOSFET | 143 | 75 | 20 | 3.7 | 87 | 175 | 60 | 370 | 0.0073 | TO220AB | |
| IRFB7746 | N | MOSFET | 99 | 75 | 20 | 3.7 | 59 | 175 | 36 | 255 | 0.0106 | TO220AB | |
| IRFB7787 | N | MOSFET | 125 | 75 | 20 | 3.7 | 76 | 175 | 48 | 330 | 0.0084 | TO220AB | |
| IRFZ48N | N | MOSFET | 94 | 55 | 10 | 53 | 150 | 54 | 0.016 | TO220AB | |||
| IRL3705Z | N | MOSFET | 130 | 55 | 16 | 3 | 86 | 175 | 40 | 0.008 | TO220AB | ||
| IRL3705ZPBF | N | MOSFET | 130 | 55 | 16 | 3 | 75 | 175 | 240 | 420 | 0.008 | TO220AB | |
| KF60N06P | N | MOSFET | 113 | 60 | 20 | 60 | 150 | 75 | 490 | 0.0115 | TO220AB | ||
| KF70N06P | N | MOSFET | 125 | 60 | 20 | 70 | 150 | 110 | 543 | 0.01 | TO220AB | ||
| KF80N08P | N | MOSFET | 230 | 75 | 20 | 80 | 175 | 228 | 840 | 0.0085 | TO220AB | ||
| KMB060N60PA | N | MOSFET | 150 | 60 | 25 | 60 | 175 | 220 | 360 | 0.0115 | TO220AB | ||
| KMB080N75PA | N | MOSFET | 300 | 75 | 25 | 80 | 175 | 25 | 730 | 0.01 | TO220AB | ||
| KU034N08P | N | MOSFET | 192 | 75 | 20 | 170 | 150 | 250 | 1150 | 0.003 | TO220AB | ||
| KU045N10P | N | MOSFET | 192 | 100 | 20 | 150 | 150 | 240 | 1000 | 0.0039 | TO220AB | ||
| MTE010N10E3 | N | MOSFET | 150 | 100 | 20 | 70 | 175 | 48 | 12 | 250 | 0.0096 | TO220AB | |
| MTN1308E3 | N | MOSFET | 230 | 75 | 30 | 80 | 175 | 42 | 200 | 340 | 0.0105 | TO220AB | |
| MTN3205E3 | N | MOSFET | 200 | 55 | 20 | 128 | 175 | 116 | 580 | 0.0039 | TO220AB | ||
| PHP110NQ06LT | N | MOSFET | 200 | 55 | 15 | 2 | 75 | 175 | 123 | 520 | 0.007 | TO220AB | |
| PHP110NQ08LT | N | MOSFET | 230 | 75 | 20 | 2 | 75 | 175 | 185 | 905 | 0.0085 | TO220AB | |
| PHP110NQ08T | N | MOSFET | 230 | 75 | 20 | 4 | 75 | 175 | 107 | 840 | 0.009 | TO220AB | |
| PHP112N06T | N | MOSFET | 200 | 55 | 20 | 4 | 75 | 175 | 94 | 720 | 0.008 | TO220AB | |
| PHP119NQ06T | N | MOSFET | 200 | 55 | 20 | 4 | 75 | 175 | 52 | 554 | 0.0071 | TO220AB | |
| PHP160NQ08T | N | MOSFET | 300 | 75 | 20 | 4 | 75 | 175 | 56 | 845 | 0.0056 | TO220AB | |
| PHP73N06T | N | MOSFET | 166 | 60 | 20 | 4 | 73 | 175 | 79 | 421 | 0.014 | TO220AB | |
| PHP75NQ08T | N | MOSFET | 157 | 75 | 20 | 4 | 75 | 175 | 36 | 320 | 0.013 | TO220AB | |
| PHP79NQ08LT | N | MOSFET | 157 | 75 | 15 | 2 | 73 | 175 | 30 | 0.016 | TO220AB | ||
| PSMN012-80PS | N | MOSFET | 148 | 80 | 20 | 4 | 74 | 175 | 43 | 0.011 | TO220AB | ||
| PSMN016-100PS | N | MOSFET | 148 | 100 | 20 | 4 | 96 | 175 | 49 | 0.016 | TO220AB | ||
| PSMN7R6-60PS | N | MOSFET | 149 | 60 | 20 | 4 | 92 | 175 | 38.7 | 0.0078 | TO220AB | ||
| PSMN8R7-80PS | N | MOSFET | 170 | 80 | 20 | 4 | 90 | 175 | 52 | 0.0087 | TO220AB | ||
| RJK1008DPN | N | MOSFET | 125 | 100 | 80 | 0.0085 | TO220AB | ||||||
| RJK1021DPN | N | MOSFET | 100 | 100 | 70 | 0.016 | TO220AB | ||||||
| SQP60N06-15 | N | MOSFET | 107 | 60 | 20 | 3.5 | 56 | 175 | 33 | 12 | 314 | 0.015 | TO220AB |
| STK7006P | N | MOSFET | 147 | 60 | 20 | 70 | 175 | 43 | 200 | 722 | 0.016 | TO220AB | |
| SUP60N06-12P | N | MOSFET | 100 | 60 | 20 | 4.5 | 60 | 150 | 33 | 11 | 310 | 0.012 | TO220AB |
Всего результатов: 78
IRFZ48NS Datasheet (PDF)
1.1. irfz48ns.pdf Size:131K _international_rectifier
PD — 9.1408B
IRFZ48NS
IRFZ48NL
Advanced Process Technology
HEXFET Power MOSFET
Surface Mount (IRFZ48NS)
Low-profile through-hole (IRFZ48NL)
D
175C Operating Temperature VDSS = 55V
Fast Switching
Fully Avalanche Rated
RDS(on) = 0.014?
Description
G
Advanced HEXFET Power MOSFETs from
ID = 64A
International Rectifier utilize advanced processing
S
techniques to achieve extre
1.2. irfz48ns.pdf Size:251K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ48NS
·FEATURES
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S
3.1. irfz48npbf.pdf Size:226K _update
PD — 94991B
IRFZ48NPbF
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
VDSS = 55V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 14mΩ
G
l Fully Avalanche Rated
l Lead-Free
ID = 64A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extr
3.2. irfz48nlpbf.pdf Size:301K _update
IRFZ48NSPbF
IRFZ48NLPbF
l Advanced Process Technology
l Surface Mount (IRFZ48NS)
HEXFET Power MOSFET
l Low-profile through-hole (IRFZ48NL)
l 175°C Operating Temperature D
VDSS = 55V
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
RDS(on) = 0.014Ω
Description
G
Advanced HEXFET Power MOSFETs from
ID = 64A
International Rectifier utilize advanced processing
S
3.3. irfz48n 1.pdf Size:53K _philips
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
trench technology. The device ID Drain current (DC) 64 A
features very low on-state re
3.4. irfz48n.pdf Size:102K _international_rectifier
PD — 91406
IRFZ48N
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 14m?
Fast Switching
G
Fully Avalanche Rated
ID = 64A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per sil
3.5. irfz48n 1.pdf Size:53K _international_rectifier
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
trench technology. The device ID Drain current (DC) 64 A
features very low on-state re
3.6. irfz48n.pdf Size:144K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification
isc N-Channel MOSFET Transistor IRFZ48N
FEATURES
·Drain Current –ID= 64A@ TC=25℃
·Drain Source Voltage-
: VDSS= 55V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.014Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATI
IRFZ48NPBF Datasheet (PDF)
1.1. irfz48npbf.pdf Size:226K _update
PD — 94991B
IRFZ48NPbF
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
VDSS = 55V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 14mΩ
G
l Fully Avalanche Rated
l Lead-Free
ID = 64A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extr
3.1. irfz48nlpbf.pdf Size:301K _update
IRFZ48NSPbF
IRFZ48NLPbF
l Advanced Process Technology
l Surface Mount (IRFZ48NS)
HEXFET Power MOSFET
l Low-profile through-hole (IRFZ48NL)
l 175°C Operating Temperature D
VDSS = 55V
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
RDS(on) = 0.014Ω
Description
G
Advanced HEXFET Power MOSFETs from
ID = 64A
International Rectifier utilize advanced processing
S
3.2. irfz48n 1.pdf Size:53K _philips
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
trench technology. The device ID Drain current (DC) 64 A
features very low on-state re
3.3. irfz48ns.pdf Size:131K _international_rectifier
PD — 9.1408B
IRFZ48NS
IRFZ48NL
Advanced Process Technology
HEXFET Power MOSFET
Surface Mount (IRFZ48NS)
Low-profile through-hole (IRFZ48NL)
D
175C Operating Temperature VDSS = 55V
Fast Switching
Fully Avalanche Rated
RDS(on) = 0.014?
Description
G
Advanced HEXFET Power MOSFETs from
ID = 64A
International Rectifier utilize advanced processing
S
techniques to achieve extre
3.4. irfz48n.pdf Size:102K _international_rectifier
PD — 91406
IRFZ48N
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 14m?
Fast Switching
G
Fully Avalanche Rated
ID = 64A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per sil
3.5. irfz48n 1.pdf Size:53K _international_rectifier
Philips Semiconductors Product specification
N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
trench technology. The device ID Drain current (DC) 64 A
features very low on-state re
3.6. irfz48ns.pdf Size:251K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ48NS
·FEATURES
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S
3.7. irfz48n.pdf Size:144K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification
isc N-Channel MOSFET Transistor IRFZ48N
FEATURES
·Drain Current –ID= 64A@ TC=25℃
·Drain Source Voltage-
: VDSS= 55V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.014Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATI
IRFP048N Datasheet (PDF)
1.1. irfp048npbf.pdf Size:1519K _upd-mosfet
PD- 95422
IRFP048NPbF
• Lead-Free
www.irf.com 1
06/16/04
IRFP048NPbF
2 www.irf.com
IRFP048NPbF
www.irf.com 3
IRFP048NPbF
4 www.irf.com
IRFP048NPbF
www.irf.com 5
IRFP048NPbF
6 www.irf.com
IRFP048NPbF
www.irf.com 7
IRFP048NPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASS
1.2. irfp048n.pdf Size:117K _international_rectifier
PD — 9.1409A
IRFP048N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = 55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.016?
Fully Avalanche Rated
G
ID = 64A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, c
1.3. irfp048n.pdf Size:241K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP048N，IIRFP048N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤16mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Ultra Low On-resistance
·Fast Switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Sourc
IRFZ48V Datasheet (PDF)
1.1. irfz48vspbf.pdf Size:179K _update
PD — 95573
IRFZ48VSPbF
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
VDSS = 60V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching RDS(on) = 12mΩ
G
l Fully Avalanche Rated
l Optimized for SMPS Applications
ID = 72A
S
l Lead-Free
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced proc
1.2. irfz48vspbf.pdf Size:179K _international_rectifier
PD — 95573
IRFZ48VSPbF
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
VDSS = 60V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching RDS(on) = 12mΩ
G
l Fully Avalanche Rated
l Optimized for SMPS Applications
ID = 72A
S
l Lead-Free
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced proc
1.3. irfz48v.pdf Size:111K _international_rectifier
PD — 93959A
IRFZ48V
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 60V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 12mΩ
G
Fast Switching
Fully Avalanche Rated
ID = 72A
Optimized for SMPS Applications S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to ac
1.4. irfz48vs.pdf Size:282K _international_rectifier
PD — 94051A
IRFZ48VS
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 60V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 12mΩ
G
Fast Switching
Fully Avalanche Rated
ID = 72A
Optimized for SMPS Applications S
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to a
1.5. irfz48v.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFZ48V， IIRFZ48V
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤12mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM R
1.6. irfz48vs.pdf Size:213K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ48VS
·FEATURES
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S
IRFZ48Z Datasheet (PDF)
1.1. irfz48zlpbf irfz48zpbf irfz48zspbf.pdf Size:376K _update
PD — 95574A
IRFZ48ZPbF
IRFZ48ZSPbF
IRFZ48ZLPbF
Features
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
D
Dynamic dv/dt Rating
VDSS = 55V
175°C Operating Temperature
Fast Switching
RDS(on) = 11mΩ
Repetitive Avalanche Allowed up to Tjmax
G
Lead-Free
ID = 61A
S
Description
This HEXFET Power MOSFET utilizes the latest
processing techniques
1.2. auirfz48zstrl.pdf Size:252K _international_rectifier
PD — 97612A
AUTOMOTIVE GRADE
AUIRFZ48Z
AUIRFZ48ZS
Features
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
D
l 175°C Operating Temperature
V(BR)DSS
55V
l Fast Switching
l Repetitive Avalanche Allowed up
RDS(on) max.
11m
Ω
G
to Tjmax
l Lead-Free, RoHS Compliant
ID
61A
S
l Automotive Qualified *
Description
Specifically designed for Automot
1.3. irfz48zlpbf irfz48zpbf irfz48zspbf.pdf Size:376K _international_rectifier
PD — 95574A
IRFZ48ZPbF
IRFZ48ZSPbF
IRFZ48ZLPbF
Features
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
D
Dynamic dv/dt Rating
VDSS = 55V
175°C Operating Temperature
Fast Switching
RDS(on) = 11mΩ
Repetitive Avalanche Allowed up to Tjmax
G
Lead-Free
ID = 61A
S
Description
This HEXFET Power MOSFET utilizes the latest
processing techniques
1.4. irfz48zs.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRFZ48ZS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt
1.5. irfz48z.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFZ48Z， IIRFZ48Z
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤11mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM R
