Datasheet nxp irf530n

Содержание:

IRF530NL MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
IRF530NL Datasheet (PDF)
IRL530N Datasheet (PDF)
Datasheets
IRL530N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
IRL530N Datasheet (PDF)
IRF530S MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
IRF530S Datasheet (PDF)
IRF530S Datasheet (PDF)
IRF530N Datasheet (PDF)
IRF530NPBF Datasheet (PDF)

IRF530NL MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF530NL

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 79
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 17
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 24.7
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.11
Ohm

Тип корпуса: TO262

IRF530NL
Datasheet (PDF)

Irfz48n mosfet. datasheet pdf. equivalent

3.1. irf530n 1.pdf Size:98K _philips

Philips Semiconductors Product specification
N-channel TrenchMOS? transistor IRF530N
FEATURES SYMBOL QUICK REFERENCE DATA
Trench technology d
Low on-state resistance VDSS = 100 V
Fast switching
Low thermal resistance ID = 17 A
g
RDS(ON) ? 110 m?
s
GENERAL DESCRIPTION PINNING SOT78 (TO220AB)
N-channel enhancement mode PIN DESCRIPTION
tab
field-effect power transistor in a

3.2. irf530n.pdf Size:212K _international_rectifier

PD — 91351
IRF530N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 90m?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per si

3.3. irf530npbf.pdf Size:183K _international_rectifier

PD — 94962
IRF530NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
l Fast Switching
G
l Fully Avalanche Rated
ID = 17A
l Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremel

3.4. irf530nspbf.pdf Size:279K _international_rectifier

PD — 95100
IRF530NSPbF
IRF530NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
VDSS = 100V
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
l Lead-Free S
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achi

3.5. irf530ns.pdf Size:178K _international_rectifier

PD — 91352A
IRF530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRF530NS)
Low-profile through-hole (IRF530NL)
175C Operating Temperature
RDS(on) = 0.11?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resis

3.6. irf530n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF530N，IIRF530N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.09Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYM

3.7. irf530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

Другие MOSFET… IRF523
, IRF530
, IRF5305
, IRF5305L
, IRF5305S
, IRF530A
, IRF530FI
, IRF530N
, IRF1404
, IRF530NS
, IRF531
, IRF532
, IRF533
, IRF540
, IRF540A
, IRF540FI
, IRF540N
.

IRL530N Datasheet (PDF)

Irf3710 mosfet. datasheet pdf. equivalent

1.1. irl530nspbf irl530nlpbf.pdf Size:460K _upd

PD- 95593
IRL530NSPbF
IRL530NLPbF
• Lead-Free
www.irf.com 1
07/21/04
IRL530NS/LPbF
2 www.irf.com
IRL530NS/LPbF
www.irf.com 3
IRL530NS/LPbF
4 www.irf.com
IRL530NS/LPbF
www.irf.com 5
IRL530NS/LPbF
6 www.irf.com
IRL530NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance

1.2. irl530ns.pdf Size:178K _international_rectifier

PD — 91349B
IRL530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRL530NS)
Low-profile through-hole (IRL530NL)
175C Operating Temperature
RDS(on) = 0.10?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resi

1.3. irl530n.pdf Size:127K _international_rectifier

PD — 91348B
IRL530N
HEXFET Power MOSFET
Logic-Level Gate Drive
D
Advanced Process Technology
VDSS = 100V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.10?
Fast Switching
G
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon

1.4. irl530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRL530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.5. irl530n.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRL530N，IIRL530N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.1Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

Datasheets

Irf3808lpbf mosfet. datasheet pdf. equivalent

Datasheet

PDF, 101 Кб

Выписка из документа

Philips Semiconductors Product specification N-channel TrenchMOSTM transistor IRF530N FEATURES ‘Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOLd QUICK REFERENCE DATA VDSS = 100 V ID = 17 Ag RDS(ON) 110 ms GENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic envelope using ‘trench’ technology. Applications: d.c. to d.c. converters switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package. PINNINGPIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB)tab drain 1 2 3 gate source drain LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 °C to 175°C Tj = 25 °C to 175°C; RGS = 20 k Tmb = 25 °C; VGS = 10 V Tmb = 100 °C; VGS = 10 V Tmb = 25 °C Tmb = 25 °C MIN. -55 MAX. 100 100 ± 20 17 12 68 79 175 UNIT V V V A A A W °C AVALANCHE ENERGY LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy Peak non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 7.8 A; tp = 300 µs; Tj prior to avalanche = 25°C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:14 MIN. MAX. 150 UNIT mJ IAS -17 A August 1999 1 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOSTM transistor IRF530N THERMAL RESISTANCESSYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air TYP. MAX. UNIT 60 1.9 K/W K/W ELECTRICAL CHARACTERISTICSTj= 25°C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) gfs IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Forward transconductance Gate source leakage current Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55°C VDS = VGS; ID = 1 mA Tj = 175°C Tj = -55°C VGS = 10 V; ID = 9 A Tj = 175°C VDS = 25 V; ID = 9 A …

IRL530N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRL530N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 79
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Максимально допустимый постоянный ток стока (Id): 17
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 22.7
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.1
Ohm

Тип корпуса: TO220AB

IRL530N
Datasheet (PDF)

1.1. irl530nspbf irl530nlpbf.pdf Size:460K _upd

1.2. irl530ns.pdf Size:178K _international_rectifier

1.3. irl530n.pdf Size:127K _international_rectifier

1.4. irl530ns.pdf Size:258K _inchange_semiconductor

1.5. irl530n.pdf Size:244K _inchange_semiconductor

Другие MOSFET… IRL520
, IRL520A
, IRL520N
, IRL520NL
, IRL520NS
, IRL521
, IRL530
, IRL530A
, BF245C
, IRL530NL
, IRL530NS
, IRL531
, IRL540
, IRL540A
, IRL540N
, IRL540NL
, IRL540NS
.

IRF530S MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF530S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 88
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 14
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 26
nC

Время нарастания (tr): 34
ns

Выходная емкость (Cd): 250
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.16
Ohm

Тип корпуса: TO-263

IRF530S
Datasheet (PDF)

1.1. irf530s.pdf Size:197K _international_rectifier

IRF530S, SiHF530S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 100
• Surface Mount
RDS(on) ()VGS = 10 V 0.16
• Available in Tape and Reel
Qg (Max.) (nC) 26
• Dynamic dV/dt Rating
Qgs (nC) 5.5
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
Qgd (nC) 11
• Fast Switching
Configu

1.2. irf530spbf.pdf Size:1851K _international_rectifier

PD- 95982
IRF530SPbF
Lead-Free
12/21/04
Document Number: 91020 www.vishay.com
1
IRF530SPbF
Document Number: 91020 www.vishay.com
2
IRF530SPbF
Document Number: 91020 www.vishay.com
3
IRF530SPbF
Document Number: 91020 www.vishay.com
4
IRF530SPbF
Document Number: 91020 www.vishay.com
5
IRF530SPbF
Document Number: 91020 www.vishay.com
6
IRF530SPbF
Peak Diode Recovery dv/d

1.3. irf530s sihf530s.pdf Size:171K _vishay

IRF530S, SiHF530S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
Definition
VDS (V) 100
Surface Mount
RDS(on) (?)VGS = 10 V 0.16
Available in Tape and Reel
Qg (Max.) (nC) 26
Dynamic dV/dt Rating
Qgs (nC) 5.5
Repetitive Avalanche Rated
175 C Operating Temperature
Qgd (nC) 11
Fast Switching
Configuration Single
Eas

Другие MOSFET… SMG2301
, SMG2301P
, SMG2302
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, IRF1404
, SMG2306NE
, SMG2310A
, SMG2310N
, SMG2314N
, SMG2314NE
, SMG2318N
, SMG2319P
, SMG2321P
.