Irf3710 mosfet. datasheet pdf. equivalent

Содержание:

IRF3710ZPBF Datasheet (PDF)
IRF3710Z Datasheet (PDF)
P3710BV Datasheet (PDF)
IRF3710SPBF Datasheet (PDF)
IRF3709 Datasheet (PDF)
IRF5M3710 Datasheet (PDF)
IRF3710ZS Datasheet (PDF)
IRF3710S Datasheet (PDF)
IRFP3710 Datasheet (PDF)
IRFP3710PBF Datasheet (PDF)

IRF3710ZPBF Datasheet (PDF)

1.1. irf3710zlpbf irf3710zpbf irf3710zspbf.pdf Size:382K _international_rectifier

PD — 95466A
IRF3710ZPbF
IRF3710ZSPbF
Features
IRF3710ZLPbF
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
D
VDSS = 100V
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
RDS(on) = 18mΩ
G
Description
ID = 59A
This HEXFET Power MOSFET utilizes the latest
S
processing techn

2.1. auirf3710zstrl.pdf Size:330K _update-mosfet

PD — 97470
AUIRF3710Z
AUTOMOTIVE GRADE
AUIRF3710ZS
Features
HEXFET Power MOSFET
Low On-Resistance
175°C Operating Temperature
D
VDSS = 100V
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 18mΩ
Lead-Free, RoHS Compliant
G
Automotive Qualified *
ID = 59A
Description
S
Specifically designed for Automotive applications,
this HE

2.2. irf3710z.pdf Size:172K _international_rectifier

PD — 94632
IRF3710Z
AUTOMOTIVE MOSFET
HEXFET Power MOSFET
Features
D
Advanced Process Technology
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
RDS(on) = 18mΩ
175°C Operating Temperature
G
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
ID = 59A
S
Description
Specifically designed for Automotive applications, this HEXFET Power
MOSFET utilizes th

2.3. auirf3710zstrl.pdf Size:330K _international_rectifier

2.4. irf3710z.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF3710Z，IIRF3710Z
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤18mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM

2.5. irf3710zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3710ZS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol

IRF3710Z Datasheet (PDF)

Транзистор irf540

1.1. auirf3710zstrl.pdf Size:330K _update-mosfet

1.2. irf3710z.pdf Size:172K _international_rectifier

PD — 94632
IRF3710Z
AUTOMOTIVE MOSFET
HEXFET Power MOSFET
Features
D
Advanced Process Technology
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
RDS(on) = 18m?
175C Operating Temperature
G
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
ID = 59A
S
Description
Specifically designed for Automotive applications, this HEXFET Power
MOSFET utilizes the latest

1.3. irf3710zlpbf irf3710zpbf irf3710zspbf.pdf Size:382K _international_rectifier

1.4. irf3710z.pdf Size:246K _inchange_semiconductor

1.5. irf3710zs.pdf Size:258K _inchange_semiconductor

P3710BV Datasheet (PDF)

Datasheet nxp irf530n

1.1. p3710bv.pdf Size:464K _unikc

P3710BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
37mΩ @VGS = 10V
100V 5.2A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
VDS
Drain-Source Voltage 100
V
VGS
Gate-Source Voltage ±20
TA = 25 °
C
5.2
ID
Continuous Drain Current
TA = 70 °
C
4.2
A
IDM
40
Pulsed Drain Curren

4.1. p3710bd.pdf Size:748K _unikc

P3710BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
37mΩ @VGS = 10V
100V 25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
VDS
Drain-Source Voltage 100 V
VGS
Gate-Source Voltage ±20 V
TC = 25 °
C
25
ID
Continuous Drain Current
TC = 100 °
C
16
A
IDM
75
Pulsed Drain Curren

5.1. irfp3710pbf.pdf Size:229K _upd-mosfet

PD — 95053A
IRFP3710PbF
HEXFET Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature VDSS = 100V
l Fast Switching
l Fully Avalanche Rated
RDS(on) = 0.025Ω
G
l Lead-Free
Description ID = 57A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per sili

5.2. sfp3710g.pdf Size:442K _upd-mosfet

SFP3710G
SFP3710G
SFP3710G
SFP3710G
Silicon N-Channel MOSFET
Features
� 59A,100V,R (Max 18mΩ)@V =10V
DS(on) GS
� Ultra-low Gate Charge(Typical 1180nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(175℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe,DMOS technology. This latest techno

5.3. irfp3710pbf.pdf Size:229K _international_rectifier

5.4. irfp3710.pdf Size:185K _international_rectifier

PD-91490C
IRFP3710
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = 100V
175°C Operating Temperature
Fast Switching
RDS(on) = 0.025W
Fully Avalanche Rated
G
ID = 57A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit

5.5. irfp3710.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFP3710，IIRFP3710
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤25mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·Fully Avalanche Rated
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source

5.6. p3710av.pdf Size:317K _unikc

P3710AV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
100V 37mΩ @VGS = 10V 5.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
VDS
Drain-Source Voltage 100
V
VGS
Gate-Source Voltage ±20
TA = 25 °
C
5.5
ID
Continuous Drain Current
TA = 70 °
C
4.4
A
IDM
47
Pulsed Drain Curre

IRF3710SPBF Datasheet (PDF)

Irfz44n mosfet. datasheet pdf. equivalent

1.1. irf3710lpbf irf3710spbf.pdf Size:291K _international_rectifier

PD — 95108A
IRF3710SPbF
IRF3710LPbF
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance D
VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 23mΩ
l Fast Switching
G
l Fully Avalanche Rated
l Lead-Free
ID = 57A
S
Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize
advanced processing techniques to

2.1. irf3710s.pdf Size:184K _international_rectifier

PD -91310C
IRF3710S/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF3710S)
VDSS = 100V
Low-profile through-hole (IRF3710L)
175C Operating Temperature
RDS(on) = 0.025?
Fast Switching
G
Fully Avalanche Rated
ID = 57A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-re

2.2. irf3710s.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3710S
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

IRF3709 Datasheet (PDF)

1.1. irf3709zcl.pdf Size:312K _international_rectifier

PD — 95836
IRF3709ZCS
IRF3709ZCL
Applications
HEXFET Power MOSFET
l High Frequency Synchronous Buck
VDSS RDS(on) max
Qg
Converters for Computer Processor Power
30V 6.3m: 17nC
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
D2Pak TO-262
IRF3709ZCS IRF3709ZCL
Absolute Maximum Ratings
Parameter Max. Units
VDS
Drain-to-S

1.2. irf3709zclpbf.pdf Size:361K _international_rectifier

PD — 95529
IRF3709ZCSPbF
IRF3709ZCLPbF
Applications
HEXFET Power MOSFET
l High Frequency Synchronous Buck
VDSS RDS(on) max
Qg
Converters for Computer Processor Power
l Lead-Free
30V 6.3m: 17nC
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
D2Pak TO-262
IRF3709ZCS IRF3709ZCL
Absolute Maximum Ratings
Parameter Max. Uni

1.3. irf3709zlpbf irf3709zpbf irf3709zspbf.pdf Size:377K _international_rectifier

PD -95465
IRF3709ZPbF
IRF3709ZSPbF
IRF3709ZLPbF
Applications
HEXFET Power MOSFET
l High Frequency Synchronous Buck
VDSS RDS(on) max
Qg
Converters for Computer Processor Power
l Lead-Free
30V 6.3m: 17nC
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
TO-220AB
D2Pak TO-262
and Current
IRF3709Z
IRF3709ZS IRF3709ZL
Absolute Maximum

1.4. irf3709lpbf irf3709pbf irf3709spbf.pdf Size:231K _international_rectifier

PD — 95495
IRF3709PbF
SMPS MOSFET
IRF3709SPbF
IRF3709LPBF
Applications
HEXFET Power MOSFET
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
VDSS RDS(on) max ID
for Telecom and Industrial Use
30V 9.0mΩ 90A†
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive

1.5. irf3709.pdf Size:121K _international_rectifier

PD — 94071
IRF3709
SMPS MOSFET
IRF3709S
IRF3709L
Applications
HEXFET Power MOSFET
High Frequency Isolated DC-DC
VDSS RDS(on) max ID
Converters with Synchronous Rectification
30V 9.0m? 90A
for Telecom and Industrial Use
High Frequency Buck Converters for
Server Processor Power Synchronous FET
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Imm

1.6. irf3709z.pdf Size:247K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF3709Z， IIRF3709Z
·FEATURES
·Low drain-source on-resistance:
RDS(on) ≤6.3mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM R

1.7. irf3709.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF3709， IIRF3709
·FEATURES
·Low drain-source on-resistance:
RDS(on) ≤9.0mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RAT

IRF5M3710 Datasheet (PDF)

1.1. irf5m3710.pdf Size:112K _international_rectifier

PD — 94234
HEXFET POWER MOSFET IRF5M3710
THRU-HOLE (TO-254AA)
100V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
100V 0.03Ω 35A*
IRF5M3710
Fifth Generation HEXFET power MOSFETs from
TO-254AA
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
Features:
per silicon unit area. This benefit, combined with the

4.1. irf5m3415.pdf Size:111K _international_rectifier

PD — 94286A
HEXFET POWER MOSFET IRF5M3415
THRU-HOLE (TO-254AA)
150V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
150V 0.049Ω 35A
IRF5M3415
Fifth Generation HEXFET power MOSFETs from
TO-254AA
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
Features:
per silicon unit area. This benefit, combined with the

4.2. irf5m3205.pdf Size:111K _international_rectifier

PD — 94292A
HEXFET POWER MOSFET IRF5M3205
THRU-HOLE (TO-254AA)
55V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
55V 0.015Ω 35A*
IRF5M3205
Fifth Generation HEXFET power MOSFETs from
TO-254AA
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
Features:
per silicon unit area. This benefit, combined with the

IRF3710ZS Datasheet (PDF)

1.1. auirf3710zstrl.pdf Size:330K _update-mosfet

1.2. auirf3710zstrl.pdf Size:330K _international_rectifier

1.3. irf3710zlpbf irf3710zpbf irf3710zspbf.pdf Size:382K _international_rectifier

1.4. irf3710zs.pdf Size:258K _inchange_semiconductor

IRF3710S Datasheet (PDF)

1.1. irf3710s.pdf Size:184K _international_rectifier

1.2. irf3710lpbf irf3710spbf.pdf Size:291K _international_rectifier

1.3. irf3710s.pdf Size:258K _inchange_semiconductor

IRFP3710 Datasheet (PDF)

1.1. irfp3710pbf.pdf Size:229K _upd-mosfet

1.2. irfp3710.pdf Size:185K _international_rectifier

PD-91490C
IRFP3710
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = 100V
175C Operating Temperature
Fast Switching
RDS(on) = 0.025W
Fully Avalanche Rated
G
ID = 57A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, com