Irf3808lpbf mosfet. datasheet pdf. equivalent

Содержание:

IRF7380 Datasheet (PDF)
IRF2804PBF Datasheet (PDF)
IRFB3806 Datasheet (PDF)
IRF3808 Datasheet (PDF)
IRF3808LPBF Datasheet (PDF)
IRF3808S Datasheet (PDF)
IRF3805S Datasheet (PDF)
IRF2804PBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
IRF2804PBF Datasheet (PDF)
IRF2807 Datasheet (PDF)

IRF7380 Datasheet (PDF)

1.1. irf7380pbf-1.pdf Size:205K _upd-mosfet

IRF7380TRPbF-1
HEXFET Power MOSFET
VDS 80 V
1 8
S1 D1
RDS(on) max
2 7
73 mΩ
G1 D1
(@V = 10V)
GS
3 6
S2 D2
Qg (typical) 15 nC
4 5
ID
G2 D2
3.6 A
(@T = 25°C)
A
Top View SO-8
Applications
l High frequency DC-DC converters
Features Benefits
Industry-standard pinout SO-8 Package Multi-Vendor Compatibility
⇒
Compatible with Existing Surface Mount Techniques Easier Ma

1.2. irf7380qpbf.pdf Size:200K _upd-mosfet

PD — 96132B
IRF7380QPbF
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
VDSS RDS(on) max ID
l N Channel MOSFET
73m @VGS = 10V
l Surface Mount 80V 2.2A
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
1 8
S1 D1
2 7
Description G1 D1
Additional features of These HEXFET Power
3 6
S2 D2
MOSFET’s are a 150°C junction operating
4

4.1. irf7389pbf-1.pdf Size:258K _upd-mosfet

IRF7389PbF-1
HEXFET Power MOSFET
N-CH P-CH
N-CHANNEL MOSFET
VDS 30 -30 V 1 8
S1 D1
RDS(on) max
2 7
G1 D1
0.029 0.058 Ω
(@V = 10V)
GS
3 6
S2 D2
Qg (typical) 22 23 nC
4
5
G2 D2
ID
7.3 -5.3 A P-CHANNEL MOSFET
SO-8
(@T = 25°C)
A
Top View
Features Benefits
Industry-standard pinout SO-8 Package Multi-Vendor Compatibility
⇒
Compatible with Existing Surface Mount Tech

4.2. irf7389.pdf Size:165K _international_rectifier

PD — 91645
IRF7389
PRELIMINARY
HEXFET Power MOSFET
Generation V Technology
N-CHANNEL MOSFET
N-Ch P-Ch
1 8
Ultra Low On-Resistance S1 D1
Complimentary Half Bridge 2 7
G1 D1
VDSS 30V -30V
Surface Mount
3 6
S2 D2
Fully Avalanche Rated
4
5
G2 D2
P-CHANNEL MOSFET
RDS(on) 0.029? 0.058?
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanc

IRF2804PBF Datasheet (PDF)

Транзистор irf540

1.1. irf2804lpbf irf2804pbf irf2804spbf.pdf Size:408K _international_rectifier

PD — 95332B
IRF2804PbF
IRF2804SPbF
IRF2804LPbF
Features
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
D
l 175°C Operating Temperature
VDSS = 40V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 2.0mΩ‰
l Lead-Free
G
ID = 75A
S
Description
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve e

3.1. auirf2804strr.pdf Size:281K _update-mosfet

AUTOMOTIVE GRADE PD -96290A
AUIRF2804
AUIRF2804S
AUIRF2804L
Features
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
V(BR)DSS 40V
D
l 175°C Operating Temperature
RDS(on) typ. 1.5m
Ω
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax max. 2.0m
Ω
G
l Lead-Free, RoHS Compliant
ID (Silicon Limited) 270A
l Automotive Qualified *
S
ID

3.2. auirf2804wl.pdf Size:214K _update-mosfet

PD — 97739
AUTOMOTIVE GRADE
AUIRF2804WL
HEXFET Power MOSFET
Features
D
V(BR)DSS
l Advanced Process Technology 40V
l Ultra Low On-Resistance
RDS(on) max.
1.8m
l 175°C Operating Temperature
G
l Fast Switching ID (Silicon Limited)
295A
l Repetitive Avalanche Allowed up to Tjmax
S
ID (Package Limited)
240A
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description

3.3. auirf2804strr.pdf Size:281K _international_rectifier

3.4. irf2804.pdf Size:569K _international_rectifier

PD — 94436B
AUTOMOTIVE MOSFET
IRF2804
HEXFET Power MOSFET
Features
D
● Advanced Process Technology
VDSS = 40V
● Ultra Low On-Resistance
● 175°C Operating Temperature
RDS(on) = 2.3mΩ
● Fast Switching
G
● Repetitive Avalanche Allowed up to Tjmax
ID = 75A
S
Description
Specifically designed for Automotive applications, this HEXFET Power
MOSFET utilizes the latest

3.5. irf2804s-7ppbf.pdf Size:280K _international_rectifier

PD — 97057A
IRF2804S-7PPbF
Features
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
D
l 175°C Operating Temperature
l Fast Switching
VDSS = 40V
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
RDS(on) = 1.6mΩ
Description
S
This HEXFET Power MOSFET utilizes the latest
ID = 160A
S (Pin 2, 3 ,5,6,7)
processing techniques to achieve extr

3.6. auirf2804wl.pdf Size:214K _international_rectifier

3.7. irf2804.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF2804，IIRF2804
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤2.0mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM R

IRFB3806 Datasheet (PDF)

Irfz44n mosfet. datasheet pdf. equivalent

1.1. irfb3806pbf.pdf Size:564K _upd-mosfet

PD — 97310
IRFB3806PbF
IRFS3806PbF
Applications
IRFSL3806PbF
l High Efficiency Synchronous Rectification in
SMPS
HEXFET Power MOSFET
l Uninterruptible Power Supply
l High Speed Power Switching
D
VDSS
60V
l Hard Switched and High Frequency Circuits
RDS(on) typ. 12.6m
Ω
G
max. 15.8m
Ω
Benefits
ID 43A
S
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully C

1.2. irfb3806.pdf Size:246K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB3806，IIRFB3806
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤15.8mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Suitable for High speed power switching and high efficiency
synchronous rectification in SMPS
·AB

4.1. irfb38n20dpbf.pdf Size:336K _upd-mosfet

PD — 97001C
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET Power MOSFET
Applications
Key Parameters
l High frequency DC-DC converters
VDS
200 V
l Plasma Display Panel
VDS (Avalanche) min.
260 V
Benefits
RDS(ON) max @ 10V m
54
l Low Gate-to-Drain Charge to
TJ max
175 °C
Reduce Switching Losses
l Fully Characterized Capacitance
Including Effective COSS to Simplify
De

4.2. irfb38n20d.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB38N20D，IIRFB38N20D
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤54mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High frequency DC-DC converters
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE U

IRF3808 Datasheet (PDF)

Irf640 mosfet. datasheet pdf. equivalent

1.1. irf3808s.pdf Size:161K _international_rectifier

PD — 94338A
IRF3808S
AUTOMOTIVE MOSFET
IRF3808L
Typical Applications
HEXFET Power MOSFET
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
D
Benefits
VDSS = 75V
Advanced Process Technology
Ultra Low On-Resistance
RDS(on) = 0.007?
Dynamic dv/dt Rating
G
175C Operating Temperature
ID = 106AV
Fast Switching
S
Repetitive Avalanche Allowed up to Tjmax
D

1.2. irf3808.pdf Size:131K _international_rectifier

PD — 94291B
IRF3808
AUTOMOTIVE MOSFET
HEXFET Power MOSFET
Typical Applications
Integrated Starter Alternator
D
42 Volts Automotive Electrical Systems
VDSS = 75V
Benefits
Advanced Process Technology
RDS(on) = 0.007?
Ultra Low On-Resistance
G
Dynamic dv/dt Rating
175C Operating Temperature
ID = 140AV
S
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Description

1.3. irf3808lpbf irf3808spbf.pdf Size:309K _international_rectifier

PD — 95467A
IRF3808SPbF
IRF3808LPbF
Typical Applications HEXFET Power MOSFET
Industrial Motor Drive
D
VDSS = 75V
Benefits
Advanced Process Technology
Ultra Low On-Resistance
RDS(on) = 0.007Ω
G
Dynamic dv/dt Rating
175°C Operating Temperature
ID = 106A†
Fast Switching
S
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
This Advanced Planar Stripe H

1.4. irf3808l.pdf Size:165K _international_rectifier

PD — 94338A
IRF3808S
AUTOMOTIVE MOSFET
IRF3808L
Typical Applications
HEXFET Power MOSFET
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
D
Benefits
VDSS = 75V
Advanced Process Technology
Ultra Low On-Resistance
RDS(on) = 0.007Ω
Dynamic dv/dt Rating
G
175°C Operating Temperature
ID = 106AV
Fast Switching
S
Repetitive Avalanche Allowed up to T

1.5. irf3808pbf.pdf Size:246K _international_rectifier

PD — 94972A
IRF3808PbF
HEXFET Power MOSFET
Typical Applications
Industrial Motor Drive
D
VDSS = 75V
Benefits
Advanced Process Technology
Ultra Low On-Resistance RDS(on) = 0.007Ω
G
Dynamic dv/dt Rating
175°C Operating Temperature
ID = 140A†
Fast Switching
S
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
This Advanced Planar Stripe HEXFET Power

1.6. irf3808s.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3808S
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.7. irf3808.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF3808，IIRF3808
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤7.0mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYM

IRF3808LPBF Datasheet (PDF)

1.1. irf3808lpbf irf3808spbf.pdf Size:309K _international_rectifier

2.1. irf3808l.pdf Size:165K _international_rectifier

PD — 94338A
IRF3808S
AUTOMOTIVE MOSFET
IRF3808L
Typical Applications
HEXFET Power MOSFET
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
D
Benefits
VDSS = 75V
Advanced Process Technology
Ultra Low On-Resistance
RDS(on) = 0.007Ω
Dynamic dv/dt Rating
G
175°C Operating Temperature
ID = 106AV
Fast Switching
S
Repetitive Avalanche Allowed up to T

3.1. irf3808s.pdf Size:161K _international_rectifier

PD — 94338A
IRF3808S
AUTOMOTIVE MOSFET
IRF3808L
Typical Applications
HEXFET Power MOSFET
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
D
Benefits
VDSS = 75V
Advanced Process Technology
Ultra Low On-Resistance
RDS(on) = 0.007Ω
Dynamic dv/dt Rating
G
175°C Operating Temperature
ID = 106AV
Fast Switching
S
Repetitive Avalanche Allowed up to T

3.2. irf3808.pdf Size:131K _international_rectifier

PD — 94291B
IRF3808
AUTOMOTIVE MOSFET
HEXFET Power MOSFET
Typical Applications
Integrated Starter Alternator
D
42 Volts Automotive Electrical Systems
VDSS = 75V
Benefits
Advanced Process Technology
RDS(on) = 0.007Ω
Ultra Low On-Resistance
G
Dynamic dv/dt Rating
175°C Operating Temperature
ID = 140AV
S
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Descr

3.3. irf3808pbf.pdf Size:246K _international_rectifier

3.4. irf3808s.pdf Size:258K _inchange_semiconductor

3.5. irf3808.pdf Size:245K _inchange_semiconductor

IRF3808S Datasheet (PDF)

1.1. irf3808s.pdf Size:161K _international_rectifier

1.2. irf3808lpbf irf3808spbf.pdf Size:309K _international_rectifier

1.3. irf3808s.pdf Size:258K _inchange_semiconductor

IRF3805S Datasheet (PDF)

1.1. auirf3805strl.pdf Size:382K _update-mosfet

PD — 96319
AUTOMOTIVE GRADE
AUIRF3805
AUIRF3805S
AUIRF3805L
Features HEXFET Power MOSFET
l Advanced Process Technology
V(BR)DSS
55V
D
l Ultra Low On-Resistance
RDS(on) typ.
2.6mΩ
l 175°C Operating Temperature
l Fast Switching
max. 3.3mΩ
G
l Repetitive Avalanche Allowed up to Tjmax
ID (Silicon Limited)
210A
l Lead-Free, RoHS Compliant
S
l Automotive Qualified * ID

1.2. irf3805l-7ppbf irf3805s-7ppbf.pdf Size:308K _international_rectifier

PD — 97205B
IRF3805S-7PPbF
IRF3805L-7PPbF
Features
HEXFET Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 2.6mΩ‰
G
l Lead-Free
S
ID = 160A
Description
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
This HEXFET Power MOSFET utilizes the latest
proc

1.3. irf3805lpbf irf3805pbf irf3805spbf.pdf Size:389K _international_rectifier

PD — 97046A
IRF3805PbF
IRF3805SPbF
IRF3805LPbF
Features
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
D
175°C Operating Temperature
VDSS = 55V
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
RDS(on) = 3.3mΩ
G
Description
ID = 75A
This HEXFET Power MOSFET utilizes the latest
S
processing techniques to achieve extremely

1.4. irf3805s.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3805S
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

IRF2804PBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF2804PBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300
W

Предельно допустимое напряжение сток-исток (Uds): 40
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 75
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 160
nC

Время нарастания (tr): 120
ns

Выходная емкость (Cd): 1690
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0023
Ohm

Тип корпуса: TO-220AB

IRF2804PBF
Datasheet (PDF)

1.1. irf2804lpbf irf2804pbf irf2804spbf.pdf Size:408K _international_rectifier

3.1. auirf2804strr.pdf Size:281K _update-mosfet

3.2. auirf2804wl.pdf Size:214K _update-mosfet

3.3. auirf2804strr.pdf Size:281K _international_rectifier

3.4. irf2804.pdf Size:569K _international_rectifier

3.5. irf2804s-7ppbf.pdf Size:280K _international_rectifier

3.6. auirf2804wl.pdf Size:214K _international_rectifier

3.7. irf2804.pdf Size:246K _inchange_semiconductor

Другие MOSFET… FQD6N40CTM
, FQD6N40TF
, FQD6N40TM
, IRF2204LPBF
, IRF2204PBF
, IRF2204SPBF
, IRF22N60C
, IRF2804LPBF
, IRF630A
, IRF2804S-7PPBF
, IRF2804SPBF
, IRF2805LPBF
, IRF2805PBF
, IRF2805SPBF
, IRF2807PBF
, IRF2807SPBF
, IRF2807LPBF
.

IRF2807 Datasheet (PDF)

1.1. irf2807z.pdf Size:173K _international_rectifier

PD — 94659
IRF2807Z
AUTOMOTIVE MOSFET
HEXFET Power MOSFET
Features
D
Advanced Process Technology
VDSS = 75V
Ultra Low On-Resistance
Dynamic dv/dt Rating
RDS(on) = 9.4m?
175C Operating Temperature
G
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
ID = 75A
S
Description
Specifically designed for Automotive applications, this HEXFET Power
MOSFET utilizes the latest

1.2. irf2807zlpbf irf2807zpbf irf2807zspbf.pdf Size:399K _international_rectifier

PD — 95488A
IRF2807ZPbF
IRF2807ZSPbF
Features
IRF2807ZLPbF
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
175°C Operating Temperature
VDSS = 75V
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free RDS(on) = 9.4mΩ
G
ID = 75A
Description
S
This HEXFET Power MOSFET utilizes the latest
processing techni

1.3. irf2807lpbf irf2807spbf.pdf Size:272K _international_rectifier

PD — 95945
IRF2807SPbF
IRF2807LPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Ultra Low On-Resistance
D
l Dynamic dv/dt Rating
VDSS = 75V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 13mΩ
l Fully Avalanche Rated
G
l Lead-Free
ID = 82A‡
Description
S
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques

1.4. irf2807.pdf Size:207K _international_rectifier

PD — 91517
IRF2807
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 75V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 13m?
G
Fast Switching
Fully Avalanche Rated
ID = 82A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per si

1.5. irf2807s.pdf Size:124K _international_rectifier

PD — 94170
IRF2807S
IRF2807L
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 75V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 13m?
Fast Switching
G
Fully Avalanche Rated
ID = 82A
Description
S
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resist

1.6. irf2807pbf.pdf Size:233K _international_rectifier

PD — 94970A
IRF2807PbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = 75V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 13mΩ
l Fast Switching
G
l Fully Avalanche Rated
l Lead-Free ID = 82A‡
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
ex

1.7. irf2807z.pdf Size:246K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤8.4mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Synchronous Rectifier applications
·Resonant mode power supplies
·Battery powered circuits
·ABSO

1.8. irf2807.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF2807，IIRF2807
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤13mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

1.9. irf2807s.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF2807S
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.10. irf2807zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF2807ZS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol