Datasheet international rectifier irf5305pbf

Содержание:

Принцип работы
IRF5305L Datasheet (PDF)
Datasheets
IRF5305S Datasheet (PDF)
IRF4905 Datasheet (PDF)
IRF5305 Datasheet Download — International Rectifier
IRF5305PBF Datasheet (PDF)
IRF530NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
IRF530NPBF Datasheet (PDF)
IRF5305SPBF Datasheet (PDF)
IRFR5305PBF Datasheet (PDF)
IRF530NS Datasheet (PDF)

Принцип работы

Назначение выводов сток и исток у мосфетов аналогичны контактам коллектора и эмиттера биполярного транзистора. Эти выводы делаются из материала n-типа, а корпус устройства и подложка из материала p-типа. Добавление диоксида кремния SiO₂ на подложку образует тонкий слой диэлектрика, который отделяет клемму затвора от всего корпуса.

Получается однополярное устройство, в котором проводимость осуществляется движением электронов. Область между стоком и истоком образуют свободную от носителей заряда зону. Ее насыщение электронами управляется путем подачи положительного напряжения на клемму затвора.

Оно изменяет распределение заряда в полупроводнике, поэтому дырки под слоем диэлектрика, под действием электрического поля двигаются вниз, а свободные электроны притягиваются к области вверх, образуя таким образом n-переход. По этому переходу в последующем и течет электрический ток, сила которого зависит от величины приложенного на затвор напряжения. Возможная схема включения irf3205 показан на рисунке ниже.

Так же, в зависимости от величины управляющего сигнала МОП-транзистор закрываться (низкая проводимость) или в открываться (высокая проводимость).

IRF5305L Datasheet (PDF)

Irfz48n mosfet. datasheet pdf. equivalent

1.1. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

PD — 95957
IRF5305S/LPbF
• Lead-Free
www.irf.com 1
4/21/05
IRF5305S/LPbF
2 www.irf.com
IRF5305S/LPbF
www.irf.com 3
IRF5305S/LPbF
4 www.irf.com
IRF5305S/LPbF
www.irf.com 5
IRF5305S/LPbF
6 www.irf.com
IRF5305S/LPbF
www.irf.com 7
IRF5305S/LPbF
D2Pak Package Outline
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H
PART NUMBER
LOT CODE 8024
INTERNATIONAL
ASSE

3.1. irf5305.pdf Size:124K _international_rectifier

PD — 91385B
IRF5305
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.06?
P-Channel
G
Fully Avalanche Rated
ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This

3.2. irf5305pbf.pdf Size:182K _international_rectifier

PD — 94788
IRF5305PbF
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -55V
175°C Operating Temperature
Fast Switching
RDS(on) = 0.06Ω
P-Channel
G
Fully Avalanche Rated
ID = -31A
Lead-Free
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance pe

3.3. irf5305s.pdf Size:171K _international_rectifier

PD — 91386C
IRF5305S/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF5305S)
VDSS = -55V
Low-profile through-hole (IRF5305L)
175C Operating Temperature
RDS(on) = 0.06?
Fast Switching
G
P-Channel
ID = -31A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extrem

3.4. irf5305.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF5305,IIRF5305
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.06Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliab

Datasheets

Irfz44n mosfet. datasheet pdf. equivalent

Datasheet

PDF, 181 Кб

Выписка из документа

PD — 91386C IRF5305S/LHEXFET Power MOSFETAdvanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Descriptionl l D VDSS = -55V RDS(on) = 0.06 G ID = -31AS Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum RatingsParameterID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.-31 -22 -110 3.8 110 0.71 ± 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) UnitsA W W W/°C V mJ A mJ V/ns °C Thermal ResistanceParameterRJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max.1.4 40 Units°C/W 4/1/99 IRF5305S/LElectrical Characteristics @ TJ = 25°C (unless otherwise specified)Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain («Miller») Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 -2.0 8.0 …

IRF5305S Datasheet (PDF)

Irf3710 mosfet. datasheet pdf. equivalent

1.1. irf5305s.pdf Size:171K _international_rectifier

1.2. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

3.1. irf5305.pdf Size:124K _international_rectifier

3.2. irf5305pbf.pdf Size:182K _international_rectifier

3.3. irf5305.pdf Size:241K _inchange_semiconductor

IRF4905 Datasheet (PDF)

1.1. irf4905lpbf irf4905spbf.pdf Size:361K _international_rectifier

PD — 97034
IRF4905SPbF
IRF4905LPbF
Features HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = -55V
150°C Operating Temperature
Fast Switching
RDS(on) = 20mΩ
Repetitive Avalanche Allowed up to Tjmax
G
Some Parameters Are Differrent from
ID = -42A
IRF4905S
S
Lead-Free
D
D
Description
Features of this design are a 150°C junction oper

1.2. irf4905pbf.pdf Size:181K _international_rectifier

PD — 94816
IRF4905PbF
HEXFET Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
D
Dynamic dv/dt Rating
VDSS = -55V
175°C Operating Temperature
Fast Switching
RDS(on) = 0.02Ω
G
P-Channel
Fully Avalanche Rated
ID = -74A
Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extre

1.3. irf4905s.pdf Size:163K _international_rectifier

PD — 9.1478A
IRF4905S/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF4905S)
VDSS = -55V
Low-profile through-hole (IRF4905L)
175C Operating Temperature
RDS(on) = 0.02?
Fast Switching
G
P-Channel
ID = -74A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extre

1.4. irf4905.pdf Size:108K _international_rectifier

PD — 9.1280C
IRF4905
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = -55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.02?
Fast Switching
G
P-Channel
ID = -74A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resista

1.5. irf4905.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF4905,IIRF4905
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.02Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliab

IRF5305 Datasheet Download — International Rectifier

Номер произв

IRF5305

Описание

Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)

Производители

International Rectifier

логотип

1Page

No Preview Available !

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l P-Channel

l Fully Avalanche Rated

G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TSTG

Parameter

Continuous Drain Current, VGS @ -10V

Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance

RθJC

RθCS

RθJA

Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD — 91385B
IRF5305

HEXFETPower MOSFET

D VDSS = -55V

RDS(on) = 0.06Ω

ID = -31A

S
TO-220AB
Max.
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
3/3/00

No Preview Available !

IRF5305

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS∆TJ

RDS(on)

VGS(th)

gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

IDSS Drain-to-Source Leakage Current

IGSS

Qgs

Qgd

td(on)

td(off)

Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain («Miller») Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

LD Internal Drain Inductance

Ciss

Coss

Crss

Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-55 ––– –––
––– -0.034 –––
––– ––– 0.06
-2.0 ––– -4.0
8.0 ––– –––
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 63
––– ––– 13
––– ––– 29
––– 14 –––
––– 66 –––
––– 39 –––
––– 63 –––
––– 4.5 –––
––– 7.5 –––
––– 1200 –––
––– 520 –––
––– 250 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions

VGS = 0V, ID = -250µA

Reference to 25°C, ID = -1mA

VGS = -10V, ID = -16A

VDS = VGS, ID = -250µA

VDS = -25V, ID = -16A

VDS = -55V, VGS = 0V

VDS = -44V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = -16A

VDS = -44V

VGS = -10V, See Fig. 6 and 13

VDD = -28V

ID = -16A

RG = 6.8Ω

RD = 1.6Ω, See Fig. 10

Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S

VGS = 0V

VDS = -25V

ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter

IS Continuous Source Current

(Body Diode)

ISM Pulsed Source Current

(Body Diode)

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse RecoveryCharge

Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
71
170
Max.
-31
-110
-1.3
110
250
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S

TJ = 25°C, IS = -16A, VGS = 0V

TJ = 25°C, IF = -16A

di/dt = -100A/µs

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

VDD = -25V, starting TJ = 25°C, L = 2.1mH

RG = 25Ω, IAS = -16A. (See Figure 12)

ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

2 www.irf.com

No Preview Available !

1000
100
VGS
TOP — 15V
— 10V
— 8.0V
— 7.0V
— 6.0V
— 5.5V
— 5.0V
BOTTOM — 4.5V
1000
100
VGS
TOP — 15V
— 10V
— 8.0V
— 7.0V
— 6.0V
— 5.5V
— 5.0V
BOTTOM — 4.5V
IRF5305
10
-4.5V
20µs PULSE W IDTH
1

TcJ = 2 5°C

A
0.1 1
10 100

-VD S , D rain-to-S ourc e V oltage (V )

Fig 1. Typical Output Characteristics

10
-4 .5 V
20µs P ULSE W ID TH
1

TCJ = 17 5°C

A
0.1 1
10 100

-VD S , D rain-to-S ource V oltage (V )

Fig 2. Typical Output Characteristics

100

TJ = 25°C

TJ = 175°C

V DS= -25V

20µs PU LSE W ID TH

4 5 6 7 8 9 10

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com
2.0

ID = -27A

1.5
1.0
0.5
0.0

V GS= -10V

A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature
3

Всего страниц

8 Pages

Скачать PDF

IRF5305PBF Datasheet (PDF)

1.1. irf5305pbf.pdf Size:182K _international_rectifier

3.1. irf5305.pdf Size:124K _international_rectifier

3.2. irf5305s.pdf Size:171K _international_rectifier

3.3. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

3.4. irf5305.pdf Size:241K _inchange_semiconductor

IRF530NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF530NPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 70
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 17
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 37
nC

Время нарастания (tr): 22
ns

Выходная емкость (Cd): 130
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.09
Ohm

Тип корпуса: TO-220AB

IRF530NPBF
Datasheet (PDF)

1.1. irf530npbf.pdf Size:183K _international_rectifier

PD — 94962
IRF530NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
l Fast Switching
G
l Fully Avalanche Rated
ID = 17A
l Lead-Free
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremel

3.1. irf530n 1.pdf Size:98K _philips

Philips Semiconductors Product specification
N-channel TrenchMOS? transistor IRF530N
FEATURES SYMBOL QUICK REFERENCE DATA
Trench technology d
Low on-state resistance VDSS = 100 V
Fast switching
Low thermal resistance ID = 17 A
g
RDS(ON) ? 110 m?
s
GENERAL DESCRIPTION PINNING SOT78 (TO220AB)
N-channel enhancement mode PIN DESCRIPTION
tab
field-effect power transistor in a

3.2. irf530n.pdf Size:212K _international_rectifier

PD — 91351
IRF530N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 100V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 90m?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per si

3.3. irf530nspbf.pdf Size:279K _international_rectifier

PD — 95100
IRF530NSPbF
IRF530NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
VDSS = 100V
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 90mΩ
G
l Fast Switching
l Fully Avalanche Rated
ID = 17A
l Lead-Free S
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achi

3.4. irf530ns.pdf Size:178K _international_rectifier

PD — 91352A
IRF530NS/L
HEXFET Power MOSFET
Advanced Process Technology D
VDSS =100V
Surface Mount (IRF530NS)
Low-profile through-hole (IRF530NL)
175C Operating Temperature
RDS(on) = 0.11?
G
Fast Switching
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resis

3.5. irf530n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF530N，IIRF530N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.09Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYM

3.6. irf530ns.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF530NS
·FEATURES
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.

IRF5305SPBF Datasheet (PDF)

1.1. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

2.1. irf5305s.pdf Size:171K _international_rectifier

3.1. irf5305.pdf Size:124K _international_rectifier

3.2. irf5305pbf.pdf Size:182K _international_rectifier

3.3. irf5305.pdf Size:241K _inchange_semiconductor

IRFR5305PBF Datasheet (PDF)

1.1. irfr5305pbf.pdf Size:250K _upd

PD-95025A
IRFR5305PbF
IRFU5305PbF
HEXFET Power MOSFET
l Ultra Low On-Resistance
l Surface Mount (IRFR5305)
D
l Straight Lead (IRFU5305) VDSS = -55V
l Advanced Process Technology
l Fast Switching
RDS(on) = 0.065Ω
l Fully Avalanche Rated
G
l Lead-Free
ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achie

1.2. irfr5305pbf.pdf Size:250K _international_rectifier

2.1. auirfr5305tr.pdf Size:300K _international_rectifier

PD-96341
AUTOMOTIVE MOSFET
AUIRFR5305
AUIRFU5305
HEXFET Power MOSFET
D
Features
V(BR)DSS
-55V
Advanced Planar Technology
Low On-Resistance
RDS(on) max.
0.065Ω
Dynamic dV/dT Rating G
175°C Operating Temperature
Fast Switching S ID -31A
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant D
D
Automotive Qualified *
S
Descri

2.2. irfr5305.pdf Size:156K _international_rectifier

PD — 91402A
IRFR/U5305
HEXFET Power MOSFET
Ultra Low On-Resistance
D
Surface Mount (IRFR5305)
VDSS = -55V
Straight Lead (IRFU5305)
Advanced Process Technology
RDS(on) = 0.065Ω
Fast Switching
G
Fully Avalanche Rated
ID = -31A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistanc

2.3. irfr5305.pdf Size:285K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRFR5305
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤65mΩ(@V = -10V; I = -16A)
GS D
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE