Моп-транзистор irfz44n

IRF9Z24N Datasheet (PDF)

1.1. irf9z24nlpbf irf9z24nspbf.pdf Size:389K _upd-mosfet

PD- 95770
IRF9Z24NSPbF
IRF9Z24NLPBF
• Lead-Free
www.irf.com 1
04/25/05
IRF9Z24NS/LPbF
2 www.irf.com
IRF9Z24NS/LPbF
www.irf.com 3
IRF9Z24NS/LPbF
4 www.irf.com
IRF9Z24NS/LPbF
www.irf.com 5
IRF9Z24NS/LPbF
6 www.irf.com
IRF9Z24NS/LPbF
www.irf.com 7
IRF9Z24NS/LPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS

1.2. irf9z24npbf.pdf Size:2354K _upd-mosfet

PD — 94982
IRF9Z24NPbF
• Lead-Free
www.irf.com 1

IRF9Z24NPbF
2 www.irf.com
IRF9Z24NPbF
www.irf.com 3
IRF9Z24NPbF
4 www.irf.com
IRF9Z24NPbF
www.irf.com 5
IRF9Z24NPbF
6 www.irf.com
IRF9Z24NPbF
Peak Diode Recovery dv/dt Test Circuit

*
•
•
ƒ
•

 1.3. irf9z24ns.pdf Size:168K _international_rectifier

PD — 91742A
IRF9Z24NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9Z24NS)
VDSS = -55V
Low-profile through-hole (IRF9Z24NL)
175C Operating Temperature
RDS(on) = 0.175?
P-Channel
G
Fast Switching
ID = -12A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
ex

1.4. irf9z24n.pdf Size:109K _international_rectifier

PD -9.1484B
IRF9Z24N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating VDSS = -55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.175?
P-Channel
G
Fully Avalanche Rated
ID = -12A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This

IRFZ24NS Datasheet (PDF)

1.1. irfz24nspbf.pdf Size:672K _update

PD — 95147
IRFZ24NS/LPbF
HEXFET Power MOSFET
Advanced Process Technology
Surface Mount (IRFZ24NS)
D
VDSS = 55V
Low-profile through-hole (IRFZ24NL)
175°C Operating Temperature
RDS(on) = 0.07Ω
Fast Switching
G
Fully Avalanche Rated
Lead-Free ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve

1.2. irfz24ns.pdf Size:159K _international_rectifier

PD — 9.1355B
IRFZ24NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 55V
Surface Mount (IRFZ24NS)
Low-profile through-hole (IRFZ24NL)
175C Operating Temperature RDS(on) = 0.07?
Fast Switching
G
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-res

 1.3. irfz24nspbf.pdf Size:203K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFZ24NSPbF
·FEATURES
·With TO-263(D2PAK) packaging
·Surface mount
·High speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol

IRFZ24NS MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFZ24NS

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 45
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Максимально допустимый постоянный ток стока (Id): 17
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 13.3
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.07
Ohm

Тип корпуса: D2PAK

IRFZ24NS
Datasheet (PDF)

1.1. irfz24nspbf.pdf Size:672K _update

PD — 95147
IRFZ24NS/LPbF
HEXFET Power MOSFET
Advanced Process Technology
Surface Mount (IRFZ24NS)
D
VDSS = 55V
Low-profile through-hole (IRFZ24NL)
175°C Operating Temperature
RDS(on) = 0.07Ω
Fast Switching
G
Fully Avalanche Rated
Lead-Free ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve

1.2. irfz24ns.pdf Size:159K _international_rectifier

PD — 9.1355B
IRFZ24NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 55V
Surface Mount (IRFZ24NS)
Low-profile through-hole (IRFZ24NL)
175C Operating Temperature RDS(on) = 0.07?
Fast Switching
G
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-res

 1.3. irfz24nspbf.pdf Size:203K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFZ24NSPbF
·FEATURES
·With TO-263(D2PAK) packaging
·Surface mount
·High speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol

Другие MOSFET… IRFZ14A
, IRFZ15
, IRFZ20
, IRFZ22
, IRFZ24
, IRFZ24A
, IRFZ24N
, IRFZ24NL
, , IRFZ25
, IRFZ30
, IRFZ32
, IRFZ34
, IRFZ34A
, IRFZ34E
, IRFZ34N
, IRFZ34NL
.

IRFIZ24N Datasheet (PDF)

1.1. irfiz24npbf.pdf Size:213K _international_rectifier

PD — 94808
IRFIZ24NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Isolated Package
VDSS = 55V
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
RDS(on) = 0.07Ω
Fully Avalanche Rated
G
Lead-Free
Description
ID = 14A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-re

1.2. irfiz24n.pdf Size:105K _international_rectifier

PD — 9.1501A
IRFIZ24N
HEXFET Power MOSFET
Advanced Process Technology
D
Isolated Package
VDSS = 55V
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
RDS(on) = 0.07Ω
Fully Avalanche Rated
G
Description
ID = 14A
Fifth Generation HEXFETs from International Rectifier
S
utilize advanced processing techniques to achieve
extremely low on-resistance per s

 1.3. irfiz24n.pdf Size:201K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IRFIZ24N
·FEATURES
·With TO-220F package
·Low input capacitance and gate charge
·Low gate input resistance
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T

IRF9Z24N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF9Z24N

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 45
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Максимально допустимый постоянный ток стока (Id): 12
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 12.7
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.175
Ohm

Тип корпуса: TO220AB

IRF9Z24N
Datasheet (PDF)

1.1. irf9z24nlpbf irf9z24nspbf.pdf Size:389K _upd-mosfet

PD- 95770
IRF9Z24NSPbF
IRF9Z24NLPBF
• Lead-Free
www.irf.com 1
04/25/05
IRF9Z24NS/LPbF
2 www.irf.com
IRF9Z24NS/LPbF
www.irf.com 3
IRF9Z24NS/LPbF
4 www.irf.com
IRF9Z24NS/LPbF
www.irf.com 5
IRF9Z24NS/LPbF
6 www.irf.com
IRF9Z24NS/LPbF
www.irf.com 7
IRF9Z24NS/LPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS

1.2. irf9z24npbf.pdf Size:2354K _upd-mosfet

PD — 94982
IRF9Z24NPbF
• Lead-Free
www.irf.com 1

IRF9Z24NPbF
2 www.irf.com
IRF9Z24NPbF
www.irf.com 3
IRF9Z24NPbF
4 www.irf.com
IRF9Z24NPbF
www.irf.com 5
IRF9Z24NPbF
6 www.irf.com
IRF9Z24NPbF
Peak Diode Recovery dv/dt Test Circuit

*
•
•
ƒ
•

 1.3. irf9z24ns.pdf Size:168K _international_rectifier

PD — 91742A
IRF9Z24NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9Z24NS)
VDSS = -55V
Low-profile through-hole (IRF9Z24NL)
175C Operating Temperature
RDS(on) = 0.175?
P-Channel
G
Fast Switching
ID = -12A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
ex

1.4. irf9z24n.pdf Size:109K _international_rectifier

PD -9.1484B
IRF9Z24N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating VDSS = -55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.175?
P-Channel
G
Fully Avalanche Rated
ID = -12A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This

Другие MOSFET… IRF9Z10
, IRF9Z12
, IRF9Z14
, IRF9Z14S
, IRF9Z15
, IRF9Z20
, IRF9Z22
, IRF9Z24
, IRFP260
, IRF9Z24NL
, IRF9Z24NS
, IRF9Z24S
, IRF9Z25
, IRF9Z30
, IRF9Z32
, IRF9Z34
, IRF9Z34N
.

IRF9Z24 Datasheet (PDF)

1.1. irf9z24nlpbf irf9z24nspbf.pdf Size:389K _upd-mosfet

PD- 95770
IRF9Z24NSPbF
IRF9Z24NLPBF
• Lead-Free
www.irf.com 1
04/25/05
IRF9Z24NS/LPbF
2 www.irf.com
IRF9Z24NS/LPbF
www.irf.com 3
IRF9Z24NS/LPbF
4 www.irf.com
IRF9Z24NS/LPbF
www.irf.com 5
IRF9Z24NS/LPbF
6 www.irf.com
IRF9Z24NS/LPbF
www.irf.com 7
IRF9Z24NS/LPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS

1.2. irf9z24l.pdf Size:166K _upd-mosfet

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 60
• Advanced Process Technology
RDS(on) ()VGS = — 10 V 0.28
• Surface Mount (IRF9Z24S, SiHF9Z24S)
Qg (Max.) (nC) 19 • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
Qgs (nC) 5.4

 1.3. irf9z24npbf.pdf Size:2354K _upd-mosfet

PD — 94982
IRF9Z24NPbF
• Lead-Free
www.irf.com 1

IRF9Z24NPbF
2 www.irf.com
IRF9Z24NPbF
www.irf.com 3
IRF9Z24NPbF
4 www.irf.com
IRF9Z24NPbF
www.irf.com 5
IRF9Z24NPbF
6 www.irf.com
IRF9Z24NPbF
Peak Diode Recovery dv/dt Test Circuit

*
•
•
ƒ
•

1.4. irf9z24pbf.pdf Size:197K _upd-mosfet

IRF9Z24, SiHF9Z24
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) — 60
Available
• Repetitive Avalanche Rated
RDS(on) (Ω)VGS = — 10 V 0.28
RoHS*
• P-Channel
COMPLIANT
Qg (Max.) (nC) 19
• 175 °C Operating Temperature
Qgs (nC) 5.4
• Fast Switching
Qgd (nC) 11
• Ease of Paralleling
Configuration Single
• Simple Drive Require

 1.5. irf9z24spbf.pdf Size:193K _upd-mosfet

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 60
• Advanced Process Technology
RDS(on) ()VGS = — 10 V 0.28
• Surface Mount (IRF9Z24S, SiHF9Z24S)
Qg (Max.) (nC) 19 • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
Qgs (nC) 5.4

1.6. irf9z24pbf.pdf Size:1214K _international_rectifier

PD- 95415
IRF9Z24PbF
Lead-Free
06/14/04
Document Number: 91090 www.vishay.com
1
IRF9Z24PbF
Document Number: 91090 www.vishay.com
2
IRF9Z24PbF
Document Number: 91090 www.vishay.com
3
IRF9Z24PbF
Document Number: 91090 www.vishay.com
4
IRF9Z24PbF
Document Number: 91090 www.vishay.com
5
IRF9Z24PbF
Document Number: 91090 www.vishay.com
6
IRF9Z24PbF
Document Number: 91090 w

1.7. irf9z24.pdf Size:174K _international_rectifier

1.8. irf9z24ns.pdf Size:168K _international_rectifier

PD — 91742A
IRF9Z24NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9Z24NS)
VDSS = -55V
Low-profile through-hole (IRF9Z24NL)
175C Operating Temperature
RDS(on) = 0.175?
P-Channel
G
Fast Switching
ID = -12A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
ex

1.9. irf9z24s.pdf Size:311K _international_rectifier

PD — 9.912A
IRF9Z24S/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9Z24S)
VDSS = -60V
Low-profile through-hole (IRF9Z24L)
175C Operating Temperature
RDS(on) = 0.28?
Fast Switching
G
P- Channel
ID = -11A
Fully Avalanche Rated
S
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extre

1.10. irf9z24n.pdf Size:109K _international_rectifier

PD -9.1484B
IRF9Z24N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating VDSS = -55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.175?
P-Channel
G
Fully Avalanche Rated
ID = -12A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This

1.11. irf9z24 sihf9z24.pdf Size:196K _vishay

IRF9Z24, SiHF9Z24
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) — 60
Available
Repetitive Avalanche Rated
RDS(on) (?)VGS = — 10 V 0.28
RoHS*
P-Channel
COMPLIANT
Qg (Max.) (nC) 19
175 C Operating Temperature
Qgs (nC) 5.4
Fast Switching
Qgd (nC) 11
Ease of Paralleling
Configuration Single
Simple Drive Requirements
S
Complia

1.12. irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf Size:167K _vishay

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 60
Advanced Process Technology
RDS(on) (?)VGS = — 10 V 0.28
Surface Mount (IRF9Z24S, SiHF9Z24S)
Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
175 C Operating Temperature
Qgs (nC) 5.4
Fast Switchin

IRFZ34N Datasheet (PDF)

1.1. irfz34npbf.pdf Size:179K _update

PD — 94807
IRFZ34NPbF
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 55V
Dynamic dv/dt Rating
175°C Operating Temperature
RDS(on) = 0.040Ω
Fast Switching
G
Ease of Paralleling
ID = 29A
Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible o

1.2. irfz34nlpbf irfz34nspbf.pdf Size:296K _update

PD — 95571
IRFZ34NSPbF
IRFZ34NLPbF
l Advanced Process Technology
HEXFET Power MOSFET
l Surface Mount (IRFZ34NS)
l Low-profile through-hole (IRFZ34NL) D
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.040Ω
l Fully Avalanche Rated
G
l Lead-Free
ID = 29A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing tech

 1.3. irfz34n.pdf Size:104K _international_rectifier

PD -9.1276C
IRFZ34N
HEXFET Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance
VDSS = 55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.040?
Fast Switching
G
Ease of Paralleling
ID = 29A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per si

1.4. irfz34ns.pdf Size:161K _international_rectifier

PD — 9.1311A
IRFZ34NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 55V
Surface Mount (IRFZ34NS)
Low-profile through-hole (IRFZ34NL)
175C Operating Temperature RDS(on) = 0.040?
Fast Switching
G
Fully Avalanche Rated
ID = 29A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-re

 1.5. irfz34ns.pdf Size:258K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFZ34NS
·FEATURES
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S