Транзистор irfp260n

IRFB260N Datasheet (PDF)

1.1. irfb260npbf.pdf Size:170K _upd-mosfet

PD — 95473
SMPS MOSFET
IRFB260NPbF
HEXFET Power MOSFET
Applications
VDSS RDS(on) max ID
l High frequency DC-DC converters
200V 0.040Ω 56A
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to
Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
TO-220AB
Ab

1.2. irfb260n.pdf Size:90K _international_rectifier

PD — 94270
SMPS MOSFET
IRFB260N
HEXFET Power MOSFET
Applications
VDSS RDS(on) max ID
High frequency DC-DC converters
200V 0.040? 56A
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to
Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
Pa

 1.3. irfb260n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB260N，IIRFB260N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤40mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fully Characterized Avalanche Voltage and Current
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PAR

IRFB260N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFB260N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 380
W

Предельно допустимое напряжение сток-исток (Uds): 200
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Максимально допустимый постоянный ток стока (Id): 56
A

Общий заряд затвора (Qg): 150
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.04
Ohm

Тип корпуса: TO220AB

IRFB260N
Datasheet (PDF)

1.1. irfb260npbf.pdf Size:170K _upd-mosfet

PD — 95473
SMPS MOSFET
IRFB260NPbF
HEXFET Power MOSFET
Applications
VDSS RDS(on) max ID
l High frequency DC-DC converters
200V 0.040Ω 56A
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to
Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
TO-220AB
Ab

1.2. irfb260n.pdf Size:90K _international_rectifier

PD — 94270
SMPS MOSFET
IRFB260N
HEXFET Power MOSFET
Applications
VDSS RDS(on) max ID
High frequency DC-DC converters
200V 0.040? 56A
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to
Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
TO-220AB
Absolute Maximum Ratings
Pa

 1.3. irfb260n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFB260N，IIRFB260N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤40mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fully Characterized Avalanche Voltage and Current
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PAR

Другие MOSFET… IRF8714G
, IRF8721
, IRF8721G
, IRF8734
, IRF8736
, IRF8788
, IRFB23N15D
, IRFB23N20D
, 2N3824
, IRFB3004
, IRFB3004G
, IRFB3006
, IRFB3006G
, IRFB3077
, IRFB3077G
, IRFB31N20D
, IRFB3206
.

IRFP260PBF Datasheet (PDF)

1.1. irfp260pbf.pdf Size:1340K _upd-mosfet

PD- 95915
IRFP260PbF
• Lead-Free
9/27/04
Document Number: 91215 www.vishay.com
1
IRFP260PbF
Document Number: 91215 www.vishay.com
2
IRFP260PbF
Document Number: 91215 www.vishay.com
3
IRFP260PbF
Document Number: 91215 www.vishay.com
4
IRFP260PbF
Document Number: 91215 www.vishay.com
5
IRFP260PbF
Document Number: 91215 www.vishay.com
6
IRFP260PbF
Peak Diode Recovery

1.2. irfp260pbf.pdf Size:1340K _international_rectifier

PD- 95915
IRFP260PbF
Lead-Free
9/27/04
Document Number: 91215 www.vishay.com
1
IRFP260PbF
Document Number: 91215 www.vishay.com
2
IRFP260PbF
Document Number: 91215 www.vishay.com
3
IRFP260PbF
Document Number: 91215 www.vishay.com
4
IRFP260PbF
Document Number: 91215 www.vishay.com
5
IRFP260PbF
Document Number: 91215 www.vishay.com
6
IRFP260PbF
Peak Diode Recovery dv/dt

 3.1. irfp260npbf.pdf Size:180K _upd-mosfet

PD — 95010A
IRFP260NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techni

3.2. irfp260mpbf.pdf Size:634K _upd-mosfet

PD — 96293
IRFP260MPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniq

 3.3. auirfp2602.pdf Size:207K _international_rectifier

PD — 96420
AUTOMOTIVE GRADE
AUIRFP2602
HEXFET Power MOSFET
Features
Advanced Process Technology
D
V(BR)DSS 24V
Low On-Resistance
175°C Operating Temperature RDS(on) typ. 1.25m
Ω
Fast Switching
max. 1.6m
Ω
Repetitive Avalanche Allowed up to Tjmax G
Lead-Free, RoHS Compliant
ID (Silicon Limited) 380A
Automotive Qualified *
S
ID (Package Limited) 180A
Description

3.4. irfp260.pdf Size:168K _international_rectifier

 3.5. irfp260n.pdf Size:122K _international_rectifier

PD — 94004A
IRFP260N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 200V
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
RDS(on) = 0.04?
G
Fully Avalanche Rated
Ease of Paralleling
ID = 50A
S
Simple Drive Requirements
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low

3.6. irfp260 sihfp260.pdf Size:1762K _vishay

IRFP260, SiHFP260
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) 200
Available
Repetitive Avalanche Rated
RDS(on) (?)VGS = 10 V 0.055
RoHS*
Isolated Central Mounting Hole
Qg (Max.) (nC) 230
COMPLIANT
Fast Switching
Qgs (nC) 42
Ease of Paralleling
Qgd (nC) 110
Simple Drive Requirements
Configuration Single
Compliant to RoHS Dire

3.7. irfp260m.pdf Size:247K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260M，IIRFP260M
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Dr

3.8. irfp260n.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·Fully Avalanche Rated
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VAL

3.9. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IRFP260NPBF
·FEATURES
·With TO-247 packaging
·Ease of paralleling
·High speed switching
·Hard switched and high frequency circuits
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

IRFP260NPBF Datasheet (PDF)

1.1. irfp260npbf.pdf Size:180K _upd-mosfet

PD — 95010A
IRFP260NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techni

1.2. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IRFP260NPBF
·FEATURES
·With TO-247 packaging
·Ease of paralleling
·High speed switching
·Hard switched and high frequency circuits
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

 2.1. irfp260n.pdf Size:122K _international_rectifier

PD — 94004A
IRFP260N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 200V
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
RDS(on) = 0.04?
G
Fully Avalanche Rated
Ease of Paralleling
ID = 50A
S
Simple Drive Requirements
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low

2.2. irfp260n.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·Fully Avalanche Rated
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VAL

IRFP260M Datasheet (PDF)

1.1. irfp260mpbf.pdf Size:634K _upd-mosfet

PD — 96293
IRFP260MPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniq

1.2. irfp260m.pdf Size:247K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260M，IIRFP260M
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Dr

 3.1. irfp260pbf.pdf Size:1340K _upd-mosfet

PD- 95915
IRFP260PbF
• Lead-Free
9/27/04
Document Number: 91215 www.vishay.com
1
IRFP260PbF
Document Number: 91215 www.vishay.com
2
IRFP260PbF
Document Number: 91215 www.vishay.com
3
IRFP260PbF
Document Number: 91215 www.vishay.com
4
IRFP260PbF
Document Number: 91215 www.vishay.com
5
IRFP260PbF
Document Number: 91215 www.vishay.com
6
IRFP260PbF
Peak Diode Recovery

3.2. irfp260npbf.pdf Size:180K _upd-mosfet

PD — 95010A
IRFP260NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techni

 3.3. auirfp2602.pdf Size:207K _international_rectifier

PD — 96420
AUTOMOTIVE GRADE
AUIRFP2602
HEXFET Power MOSFET
Features
Advanced Process Technology
D
V(BR)DSS 24V
Low On-Resistance
175°C Operating Temperature RDS(on) typ. 1.25m
Ω
Fast Switching
max. 1.6m
Ω
Repetitive Avalanche Allowed up to Tjmax G
Lead-Free, RoHS Compliant
ID (Silicon Limited) 380A
Automotive Qualified *
S
ID (Package Limited) 180A
Description

3.4. irfp260pbf.pdf Size:1340K _international_rectifier

PD- 95915
IRFP260PbF
Lead-Free
9/27/04
Document Number: 91215 www.vishay.com
1
IRFP260PbF
Document Number: 91215 www.vishay.com
2
IRFP260PbF
Document Number: 91215 www.vishay.com
3
IRFP260PbF
Document Number: 91215 www.vishay.com
4
IRFP260PbF
Document Number: 91215 www.vishay.com
5
IRFP260PbF
Document Number: 91215 www.vishay.com
6
IRFP260PbF
Peak Diode Recovery dv/dt

 3.5. irfp260.pdf Size:168K _international_rectifier

3.6. irfp260n.pdf Size:122K _international_rectifier

PD — 94004A
IRFP260N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 200V
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
RDS(on) = 0.04?
G
Fully Avalanche Rated
Ease of Paralleling
ID = 50A
S
Simple Drive Requirements
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low

3.7. irfp260 sihfp260.pdf Size:1762K _vishay

IRFP260, SiHFP260
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) 200
Available
Repetitive Avalanche Rated
RDS(on) (?)VGS = 10 V 0.055
RoHS*
Isolated Central Mounting Hole
Qg (Max.) (nC) 230
COMPLIANT
Fast Switching
Qgs (nC) 42
Ease of Paralleling
Qgd (nC) 110
Simple Drive Requirements
Configuration Single
Compliant to RoHS Dire

3.8. irfp260n.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·Fully Avalanche Rated
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VAL

3.9. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IRFP260NPBF
·FEATURES
·With TO-247 packaging
·Ease of paralleling
·High speed switching
·Hard switched and high frequency circuits
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

IRFP260 Datasheet (PDF)

1.1. irfp260pbf.pdf Size:1340K _upd-mosfet

PD- 95915
IRFP260PbF
• Lead-Free
9/27/04
Document Number: 91215 www.vishay.com
1
IRFP260PbF
Document Number: 91215 www.vishay.com
2
IRFP260PbF
Document Number: 91215 www.vishay.com
3
IRFP260PbF
Document Number: 91215 www.vishay.com
4
IRFP260PbF
Document Number: 91215 www.vishay.com
5
IRFP260PbF
Document Number: 91215 www.vishay.com
6
IRFP260PbF
Peak Diode Recovery

1.2. irfp260npbf.pdf Size:180K _upd-mosfet

PD — 95010A
IRFP260NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techni

 1.3. irfp260mpbf.pdf Size:634K _upd-mosfet

PD — 96293
IRFP260MPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniq

1.4. auirfp2602.pdf Size:207K _international_rectifier

PD — 96420
AUTOMOTIVE GRADE
AUIRFP2602
HEXFET Power MOSFET
Features
Advanced Process Technology
D
V(BR)DSS 24V
Low On-Resistance
175°C Operating Temperature RDS(on) typ. 1.25m
Ω
Fast Switching
max. 1.6m
Ω
Repetitive Avalanche Allowed up to Tjmax G
Lead-Free, RoHS Compliant
ID (Silicon Limited) 380A
Automotive Qualified *
S
ID (Package Limited) 180A
Description

 1.5. irfp260pbf.pdf Size:1340K _international_rectifier

PD- 95915
IRFP260PbF
Lead-Free
9/27/04
Document Number: 91215 www.vishay.com
1
IRFP260PbF
Document Number: 91215 www.vishay.com
2
IRFP260PbF
Document Number: 91215 www.vishay.com
3
IRFP260PbF
Document Number: 91215 www.vishay.com
4
IRFP260PbF
Document Number: 91215 www.vishay.com
5
IRFP260PbF
Document Number: 91215 www.vishay.com
6
IRFP260PbF
Peak Diode Recovery dv/dt

1.6. irfp260.pdf Size:168K _international_rectifier

1.7. irfp260n.pdf Size:122K _international_rectifier

PD — 94004A
IRFP260N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 200V
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
RDS(on) = 0.04?
G
Fully Avalanche Rated
Ease of Paralleling
ID = 50A
S
Simple Drive Requirements
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low

1.8. irfp260 sihfp260.pdf Size:1762K _vishay

IRFP260, SiHFP260
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) 200
Available
Repetitive Avalanche Rated
RDS(on) (?)VGS = 10 V 0.055
RoHS*
Isolated Central Mounting Hole
Qg (Max.) (nC) 230
COMPLIANT
Fast Switching
Qgs (nC) 42
Ease of Paralleling
Qgd (nC) 110
Simple Drive Requirements
Configuration Single
Compliant to RoHS Dire

1.9. irfp260m.pdf Size:247K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260M，IIRFP260M
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Dr

1.10. irfp260n.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·Fully Avalanche Rated
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VAL

1.11. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IRFP260NPBF
·FEATURES
·With TO-247 packaging
·Ease of paralleling
·High speed switching
·Hard switched and high frequency circuits
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

IRFP260 Datasheet (PDF)

1.1. irfp260pbf.pdf Size:1340K _upd-mosfet

PD- 95915
IRFP260PbF
• Lead-Free
9/27/04
Document Number: 91215 www.vishay.com
1
IRFP260PbF
Document Number: 91215 www.vishay.com
2
IRFP260PbF
Document Number: 91215 www.vishay.com
3
IRFP260PbF
Document Number: 91215 www.vishay.com
4
IRFP260PbF
Document Number: 91215 www.vishay.com
5
IRFP260PbF
Document Number: 91215 www.vishay.com
6
IRFP260PbF
Peak Diode Recovery

1.2. irfp260npbf.pdf Size:180K _upd-mosfet

PD — 95010A
IRFP260NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techni

 1.3. irfp260mpbf.pdf Size:634K _upd-mosfet

PD — 96293
IRFP260MPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniq

1.4. auirfp2602.pdf Size:207K _international_rectifier

PD — 96420
AUTOMOTIVE GRADE
AUIRFP2602
HEXFET Power MOSFET
Features
Advanced Process Technology
D
V(BR)DSS 24V
Low On-Resistance
175°C Operating Temperature RDS(on) typ. 1.25m
Ω
Fast Switching
max. 1.6m
Ω
Repetitive Avalanche Allowed up to Tjmax G
Lead-Free, RoHS Compliant
ID (Silicon Limited) 380A
Automotive Qualified *
S
ID (Package Limited) 180A
Description

 1.5. irfp260pbf.pdf Size:1340K _international_rectifier

PD- 95915
IRFP260PbF
Lead-Free
9/27/04
Document Number: 91215 www.vishay.com
1
IRFP260PbF
Document Number: 91215 www.vishay.com
2
IRFP260PbF
Document Number: 91215 www.vishay.com
3
IRFP260PbF
Document Number: 91215 www.vishay.com
4
IRFP260PbF
Document Number: 91215 www.vishay.com
5
IRFP260PbF
Document Number: 91215 www.vishay.com
6
IRFP260PbF
Peak Diode Recovery dv/dt

1.6. irfp260.pdf Size:168K _international_rectifier

1.7. irfp260n.pdf Size:122K _international_rectifier

PD — 94004A
IRFP260N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 200V
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
RDS(on) = 0.04?
G
Fully Avalanche Rated
Ease of Paralleling
ID = 50A
S
Simple Drive Requirements
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low

1.8. irfp260 sihfp260.pdf Size:1762K _vishay

IRFP260, SiHFP260
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) 200
Available
Repetitive Avalanche Rated
RDS(on) (?)VGS = 10 V 0.055
RoHS*
Isolated Central Mounting Hole
Qg (Max.) (nC) 230
COMPLIANT
Fast Switching
Qgs (nC) 42
Ease of Paralleling
Qgd (nC) 110
Simple Drive Requirements
Configuration Single
Compliant to RoHS Dire

1.9. irfp260m.pdf Size:247K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260M，IIRFP260M
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Dr

1.10. irfp260n.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·Fully Avalanche Rated
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VAL

1.11. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IRFP260NPBF
·FEATURES
·With TO-247 packaging
·Ease of paralleling
·High speed switching
·Hard switched and high frequency circuits
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

IRFP260N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP260N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300
W

Предельно допустимое напряжение сток-исток (Uds): 200
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Максимально допустимый постоянный ток стока (Id): 49
A

Общий заряд затвора (Qg): 156
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.04
Ohm

Тип корпуса: TO247AC

IRFP260N
Datasheet (PDF)

1.1. irfp260npbf.pdf Size:180K _upd-mosfet

PD — 95010A
IRFP260NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techni

1.2. irfp260n.pdf Size:122K _international_rectifier

PD — 94004A
IRFP260N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 200V
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
RDS(on) = 0.04?
G
Fully Avalanche Rated
Ease of Paralleling
ID = 50A
S
Simple Drive Requirements
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low

 1.3. irfp260n.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·Fully Avalanche Rated
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VAL

1.4. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IRFP260NPBF
·FEATURES
·With TO-247 packaging
·Ease of paralleling
·High speed switching
·Hard switched and high frequency circuits
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

Другие MOSFET… IRFL4315
, IRFML8244
, IRFP1405
, IRFP150M
, IRFP150V
, IRFP250M
, IRFP250N
, IRFP260M
, APT50M38JFLL
, IRFP2907
, IRFP2907Z
, IRFP3077
, IRFP3206
, IRFP3306
, IRFP3415
, IRFP3703
, IRFP4004
.

IRFP260NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP260NPBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300
W

Предельно допустимое напряжение сток-исток (Uds): 200
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 50
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 234
nC

Время нарастания (tr): 60
ns

Выходная емкость (Cd): 603
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.04
Ohm

Тип корпуса: TO247AC

IRFP260NPBF
Datasheet (PDF)

1.1. irfp260npbf.pdf Size:180K _upd-mosfet

PD — 95010A
IRFP260NPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 200V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.04Ω
l Fully Avalanche Rated
G
l Ease of Paralleling
ID = 50A
l Simple Drive Requirements
S
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techni

1.2. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor IRFP260NPBF
·FEATURES
·With TO-247 packaging
·Ease of paralleling
·High speed switching
·Hard switched and high frequency circuits
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

 2.1. irfp260n.pdf Size:122K _international_rectifier

PD — 94004A
IRFP260N
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 200V
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
RDS(on) = 0.04?
G
Fully Avalanche Rated
Ease of Paralleling
ID = 50A
S
Simple Drive Requirements
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low

2.2. irfp260n.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFP260N，IIRFP260N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤40mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·Fully Avalanche Rated
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VAL

Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.