Транзистор irfz24n

Содержание:

IRLZ34N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
IRLZ34N Datasheet (PDF)
IRF9Z34N Datasheet (PDF)
IRFI9Z34N Datasheet (PDF)
IRFZ24N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
IRFZ24N Datasheet (PDF)
IRF9Z34NS MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
IRF9Z34NS Datasheet (PDF)
IRF9Z34NS Datasheet (PDF)

IRLZ34N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRLZ34N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 56
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Максимально допустимый постоянный ток стока (Id): 27
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 16.7
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.035
Ohm

Тип корпуса: TO220AB

IRLZ34N
Datasheet (PDF)

Моп-транзистор irfz44n

1.1. irlz34nspbf irlz34nlpbf.pdf Size:293K _upd

PD — 95583
IRLZ34NSPbF
IRLZ34NLPbF
l Logic-Level Gate Drive HEXFET Power MOSFET
l Advanced Process Technology
D
l Surface Mount (IRLZ34NS)
VDSS = 55V
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperature
RDS(on) = 0.035Ω
l Fast Switching
G
l Fully Avalanche Rated
ID = 30A
l Lead-Free
S
Description
Fifth Generation HEXFETs from International Rectifier
utiliz

1.2. irlz34npbf.pdf Size:225K _upd

PD — 94830
IRLZ34NPbF
HEXFET Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
D
l Dynamic dv/dt Rating
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.035Ω
l Fully Avalanche Rated
G
l Lead-Free
ID = 30A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest

1.3. irlz34n 1.pdf Size:51K _philips

Philips Semiconductors Product specification
N-channel enhancement mode IRLZ34N
Logic level TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope using trench VDS Drain-source voltage 55 V
technology. The device features very ID Drain current (DC) 30 A
low on

1.4. irlz34ns.pdf Size:180K _international_rectifier

PD — 91308A
IRLZ34NS/L
HEXFET Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
D
VDSS = 55V
Surface Mount (IRLZ34NS)
Low-profile through-hole (IRLZ34NL)
175C Operating Temperature
RDS(on) = 0.035?
Fast Switching
G
Fully Avalanche Rated
ID = 30A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to ach

1.5. irlz34n.pdf Size:104K _international_rectifier

PD — 9.1307B
IRLZ34N
HEXFET Power MOSFET
Logic-Level Gate Drive
D
Advanced Process Technology
VDSS = 55V
Dynamic dv/dt Rating
175C Operating Temperature
RDS(on) = 0.035?
Fast Switching
G
Fully Avalanche Rated
ID = 30A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per

1.6. irlz34n 1.pdf Size:51K _international_rectifier

1.7. irlz34n.pdf Size:245K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRLZ34N， IIRLZ34N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤35mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM R

Другие MOSFET… IRLZ24
, IRLZ24A
, IRLZ24N
, IRLZ24NL
, IRLZ24NS
, IRLZ30
, IRLZ34
, IRLZ34A
, STF5N52U
, IRLZ34NL
, IRLZ34NS
, IRLZ40
, IRLZ44
, IRLZ44A
, IRLZ44N
, IRLZ44NL
, IRLZ44NS
.

IRF9Z34N Datasheet (PDF)

Транзистор irf640

1.1. irf9z34npbf.pdf Size:240K _upd-mosfet

IRF9Z34NPbF

l Advanced Process Technology
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature

l Fast Switching
l P-Channel
Ω
l Fully Avalanche Rated G
l Lead-Free

Description S

1.2. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _upd-mosfet

PD- 95769
IRF9Z34NSPbF
IRF9Z34NLPbF
• Lead-Free
www.irf.com 1
04/25/05
IRF9Z34NS/LPbF
2 www.irf.com
IRF9Z34NS/LPbF
www.irf.com 3
IRF9Z34NS/LPbF
4 www.irf.com
IRF9Z34NS/LPbF
www.irf.com 5
IRF9Z34NS/LPbF
6 www.irf.com
IRF9Z34NS/LPbF
www.irf.com 7
IRF9Z34NS/LPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS

1.3. irf9z34n.pdf Size:108K _international_rectifier

PD — 9.1485B
IRF9Z34N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.10?
P-Channel
G
Fully Avalanche Rated
ID = -19A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This

1.4. irf9z34ns.pdf Size:162K _international_rectifier

PD — 9.1525
IRF9Z34NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9Z34NS)
VDSS = -55V
Low-profile through-hole (IRF9Z34NL)
175C Operating Temperature
RDS(on) = 0.10?
Fast Switching
G
P-Channel
ID = -19A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
ext

1.5. irf9z34n.pdf Size:242K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.1Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
relia

IRFI9Z34N Datasheet (PDF)

Транзистор irfp260n

1.1. irfi9z34n.pdf Size:120K _international_rectifier

PD — 9.1530A
IRFI9Z34N
HEXFET Power MOSFET
Advanced Process Technology
D
Isolated Package
VDSS = -55V
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
RDS(on) = 0.10?
P-Channel
G
Fully Avalanche Rated
ID = -14A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resista

2.1. irfi9z34g-pbf.pdf Size:1417K _upd

IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Isolated Package
VDS (V) — 60
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RDS(on) (Ω)VGS = — 10 V 0.14
RoHS*
• Sink to Lead Creepage Distance = 4.8 mm
Qg (Max.) (nC) 34 COMPLIANT
• P-Channel
Qgs (nC) 9.9
• 175 °C Operating Temperature
Qgd (nC) 16
• Dynamic dV/

2.2. irfi9z34g.pdf Size:911K _international_rectifier

PD — 94866
IRFI9Z34GPbF
Lead-Free
12/04/03
Document Number: 91172 www.vishay.com
1
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
2
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
3
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
4
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
5
IRFI9Z34GPbF
Document Number: 91172 www.vishay.com
6
IRFI9Z34GPbF
TO-220 Fu

2.3. irfi9z34g sihfi9z34g.pdf Size:1415K _vishay

IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Isolated Package
VDS (V) — 60
High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RDS(on) (?)VGS = — 10 V 0.14
RoHS*
Sink to Lead Creepage Distance = 4.8 mm
Qg (Max.) (nC) 34 COMPLIANT
P-Channel
Qgs (nC) 9.9
175 C Operating Temperature
Qgd (nC) 16
Dynamic dV/dt Rating
Config

IRFZ24N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFZ24N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 45
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 17
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 13.3
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.07
Ohm

Тип корпуса: TO220AB

IRFZ24N
Datasheet (PDF)

1.1. irfz24npbf.pdf Size:242K _update

IRFZ24NPbF

l Advanced Process Technology
D
l Dynamic dv/dt Rating
l 175°C Operating Temperature DSS
l Fast Switching
l Fully Avalanche Rated
DS(on) Ω
G
l Lead-Free
Description
D
S
Fifth Generation HEXFET power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-res

1.2. irfz24nspbf.pdf Size:672K _update

PD — 95147
IRFZ24NS/LPbF
HEXFET Power MOSFET
Advanced Process Technology
Surface Mount (IRFZ24NS)
D
VDSS = 55V
Low-profile through-hole (IRFZ24NL)
175°C Operating Temperature
RDS(on) = 0.07Ω
Fast Switching
G
Fully Avalanche Rated
Lead-Free ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve

1.3. irfz24nlpbf.pdf Size:675K _update-mosfet

1.4. irfz24n 1.pdf Size:53K _philips

Philips Semiconductors Product specification
N-channel enhancement mode IRFZ24N
TrenchMOSTM transistor
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
trench technology. The device ID Drain current (DC) 17 A
features very low on-state re

1.5. irfz24n.pdf Size:123K _international_rectifier

PD — 91354A
IRFZ24N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = 55V
175C Operating Temperature
Fast Switching
RDS(on) = 0.07?
Fully Avalanche Rated
G
Description
ID = 17A
S
Fifth Generation HEXFET power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area

1.6. irfz24n 1.pdf Size:53K _international_rectifier

1.7. irfz24ns.pdf Size:159K _international_rectifier

PD — 9.1355B
IRFZ24NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
VDSS = 55V
Surface Mount (IRFZ24NS)
Low-profile through-hole (IRFZ24NL)
175C Operating Temperature RDS(on) = 0.07?
Fast Switching
G
Fully Avalanche Rated
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-res

1.8. irfz24nlpbf.pdf Size:214K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFZ24NLPbF
·FEATURES
·With TO-262(DPAK) packaging
·Surface mount
·High speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Volt

1.9. irfz24nspbf.pdf Size:203K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRFZ24NSPbF
·FEATURES
·With TO-263(D2PAK) packaging
·Surface mount
·High speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Vol

Другие MOSFET… IRFZ12
, IRFZ14
, IRFZ14A
, IRFZ15
, IRFZ20
, IRFZ22
, IRFZ24
, IRFZ24A
, IRFP150N
, IRFZ24NL
, IRFZ24NS
, IRFZ25
, IRFZ30
, IRFZ32
, IRFZ34
, IRFZ34A
, IRFZ34E
.

IRF9Z34NS MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF9Z34NS

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 68
W

Предельно допустимое напряжение сток-исток (Uds): 55
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Максимально допустимый постоянный ток стока (Id): 19
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 23.3
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.1
Ohm

Тип корпуса: D2PAK

IRF9Z34NS
Datasheet (PDF)

1.1. irf9z34nlpbf irf9z34nspbf.pdf Size:1102K _upd-mosfet

1.2. irf9z34ns.pdf Size:162K _international_rectifier

2.1. irf9z34npbf.pdf Size:240K _upd-mosfet

IRF9Z34NPbF

l Advanced Process Technology
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature

l Fast Switching
l P-Channel
Ω
l Fully Avalanche Rated G
l Lead-Free

Description S

2.2. irf9z34n.pdf Size:108K _international_rectifier

2.3. irf9z34n.pdf Size:242K _inchange_semiconductor

Другие MOSFET… IRF9Z24NS
, IRF9Z24S
, IRF9Z25
, IRF9Z30
, IRF9Z32
, IRF9Z34
, IRF9Z34N
, IRF9Z34NL
, IRFZ24N
, IRF9Z34S
, IRF9Z35
, IRFB11N50A
, IRFB9N30A
, IRFB9N60A
, IRFB9N65A
, IRFBA1404
, IRFBA22N50A
.