Простые электронные ограничители тока

IRF9540S Datasheet (PDF)

1.1. irf9540s irf9540spbf.pdf Size:197K _upd-mosfet

IRF9540S, SiHF9540S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 100
• Surface Mount
RDS(on) ()VGS = — 10 V 0.20
• Available in Tape and Reel
Qg (Max.) (nC) 61 • Dynamic dV/dt Rating
• Repetitive Avalanche Rated
Qgs (nC) 14
• P-Channel
Qgd (nC) 29
• 175 °C Operating Temperature
• Fast

1.2. irf9540s.pdf Size:321K _international_rectifier

PD — 95699
IRF9540SPbF
Lead-Free
9/10/04
Document Number: 91079 www.vishay.com
1
IRF9540SPbF
Document Number: 91079 www.vishay.com
2
IRF9540SPbF
Document Number: 91079 www.vishay.com
3
IRF9540SPbF
Document Number: 91079 www.vishay.com
4
IRF9540SPbF
Document Number: 91079 www.vishay.com
5
IRF9540SPbF
Document Number: 91079 www.vishay.com
6
IRF9540SPbF
Peak Diode Recove

 1.3. irf9540s sihf9540s.pdf Size:172K _vishay

IRF9540S, SiHF9540S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 100
Surface Mount
RDS(on) (?)VGS = — 10 V 0.20
Available in Tape and Reel
Qg (Max.) (nC) 61 Dynamic dV/dt Rating
Repetitive Avalanche Rated
Qgs (nC) 14
P-Channel
Qgd (nC) 29
175 C Operating Temperature
Fast Switching
Configurat

IRF9540NS Datasheet (PDF)

1.1. irf9540nlpbf irf9540nspbf.pdf Size:326K _upd-mosfet

PD — 96030
IRF9540NSPbF
IRF9540NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = -100V
l 150°C Operating Temperature
l Fast Switching
RDS(on) = 117mΩ
l Repetitive Avalanche Allowed up to Tjmax
G
l Some Parameters are Different from
IRF9540NS/L
ID = -23A
S
l P-Channel
l Lead-Free
D
Description
D
Features of this design are a 150

1.2. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier

PD — 96030
IRF9540NSPbF
IRF9540NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = -100V
l 150°C Operating Temperature
l Fast Switching
RDS(on) = 117mΩ
l Repetitive Avalanche Allowed up to Tjmax
G
l Some Parameters are Different from
IRF9540NS/L
ID = -23A
S
l P-Channel
l Lead-Free
D
Description
D
Features of this design are a 150

 1.3. irf9540ns.pdf Size:286K _international_rectifier

PD — 91483D
IRF9540NS/L
HEXFET Power MOSFET
l Advanced Process Technology
D
l Surface Mount (IRF9540S)
VDSS = -100V
l Low-profile through-hole (IRF9540L)
l 175°C Operating Temperature
RDS(on) = 0.117Ω
l Fast Switching
G
l P-Channel
ID = -23A
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques t

IRF9610 Datasheet (PDF)

1.1. irf9610pbf.pdf Size:1337K _upd-mosfet

PD- 95413
IRF9610PbF
• Lead-Free
www.irf.com 1
06/15/04
IRF9610PbF
2 www.irf.com
IRF9610PbF
www.irf.com 3
IRF9610PbF
4 www.irf.com
IRF9610PbF
www.irf.com 5
IRF9610PbF
6 www.irf.com
IRF9610PbF
www.irf.com 7
IRF9610PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) — B —
3.78 (.149)
10.29 (.405)
2.87 (.113) 4.69 (.185)
3.54 (.13

1.2. irf9610 irf9611 irf9612 irf9613.pdf Size:447K _international_rectifier



 1.3. irf9610.pdf Size:161K _international_rectifier

1.4. irf9610s.pdf Size:288K _international_rectifier

PD — 95694
IRF9610SPbF
Lead-Free
9/1/04
Document Number: 91081 www.vishay.com
1
IRF9610SPbF
Document Number: 91081 www.vishay.com
2
IRF9610SPbF
Document Number: 91081 www.vishay.com
3
IRF9610SPbF
Document Number: 91081 www.vishay.com
4
IRF9610SPbF
Document Number: 91081 www.vishay.com
5
IRF9610SPbF
Document Number: 91081 www.vishay.com
6
IRF9610SPbF
Peak Diode Recover

 1.5. irf9610pbf.pdf Size:1148K _international_rectifier

PD- 95413
IRF9610PbF
Lead-Free
06/15/04
Document Number: 91080 www.vishay.com
1
IRF9610PbF
Document Number: 91080 www.vishay.com
2
IRF9610PbF
Document Number: 91080 www.vishay.com
3
IRF9610PbF
Document Number: 91080 www.vishay.com
4
IRF9610PbF
Document Number: 91080 www.vishay.com
5
IRF9610PbF
Document Number: 91080 www.vishay.com
6
IRF9610PbF
Document Number: 91080 w

1.6. irf9610 irf9611.pdf Size:286K _samsung



1.7. irf9610 sihf9610.pdf Size:190K _vishay

IRF9610, SiHF9610
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) — 200
P-Channel
Available
RDS(on) (?)VGS = — 10 V 3.0
Fast Switching
RoHS*
Qg (Max.) (nC) 11
COMPLIANT
Ease of Paralleling
Qgs (nC) 7.0
Simple Drive Requirements
Qgd (nC) 4.0
Lead (Pb)-free Available
Configuration Single
DESCRIPTION
S
The Power MOSFETs technology

1.8. irf9610s sihf9610s.pdf Size:170K _vishay

IRF9610S, SiHF9610S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
VDS (V) — 200
Definition
Surface Mount
RDS(on) (?)VGS = — 10 V 3.0
Available in Tape and Reel
Qg (Max.) (nC) 11
Dynamic dV/dt Rating
Qgs (nC) 7.0
P-Channel
Fast Switching
Qgd (nC) 4.0
Ease of Paralleling
Configuration Single
Simple Drive Requiremen

IRF9520 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF9520

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 60
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 6
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 18
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.6
Ohm

Тип корпуса: TO220AB

IRF9520
Datasheet (PDF)

1.1. irf9520s irf9520spbf.pdf Size:196K _upd-mosfet

IRF9520S, SiHF9520S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 100
• Surface Mount
RDS(on) ()VGS = — 10 V 0.60
• Available in Tape and Reel
Qg (Max.) (nC) 18 • Dynamic dV/dt Rating
• Repetitive Avalanche Rated
Qgs (nC) 3.0
• P-Channel
Qgd (nC) 9.0
• 175 °C Operating Temperature
• Fa

1.2. irf9520nlpbf.pdf Size:418K _upd-mosfet

PD- 95764
IRF9520NSPbF
IF9520NLPbF
• Lead-Free
www.irf.com 1
04/26/05
IRF9520NS/LPbF
2 www.irf.com
IRF9520NS/LPbF
www.irf.com 3
IRF9520NS/LPbF
4 www.irf.com
IRF9520NS/LPbF
www.irf.com 5
IRF9520NS/LPbF
6 www.irf.com
IRF9520NS/LPbF
www.irf.com 7
IRF9520NS/LPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS A

 1.3. irf9520.pdf Size:174K _international_rectifier

1.4. irf9520n.pdf Size:95K _international_rectifier

PD — 91521A
IRF9520N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -100V
175C Operating Temperature
Fast Switching
RDS(on) = 0.48?
P-Channel
G
Fully Avalanche Rated
ID = -6.8A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Th

 1.5. irf9520ns.pdf Size:155K _international_rectifier

PD -91522A
IRF9520NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9520S) VDSS = -100V
Low-profile through-hole (IRF9520L)
175C Operating Temperature
RDS(on) = 0.48?
Fast Switching
G
P-Channel
ID = -6.8A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extrem

1.6. irf9520pbf.pdf Size:1203K _international_rectifier

PD- 95412
IRF9520PbF
Lead-Free
06/15/04
Document Number: 91074 www.vishay.com
1
IRF9520PbF
Document Number: 91074 www.vishay.com
2
IRF9520PbF
Document Number: 91074 www.vishay.com
3
IRF9520PbF
Document Number: 91074 www.vishay.com
4
IRF9520PbF
Document Number: 91074 www.vishay.com
5
IRF9520PbF
Document Number: 91074 www.vishay.com
6
IRF9520PbF
Document Number: 91074 w

1.7. irf9520spbf.pdf Size:1012K _international_rectifier

PD-95987
IRF9520SPbF
Lead-Free
06/07/05
Document Number: 91075 www.vishay.com
1
IRF9520SPbF
Document Number: 91075 www.vishay.com
2
IRF9520SPbF
Document Number: 91075 www.vishay.com
3
IRF9520SPbF
Document Number: 91075 www.vishay.com
4
IRF9520SPbF
Document Number: 91075 www.vishay.com
5
IRF9520SPbF
Document Number: 91075 www.vishay.com
6
IRF9520SPbF
Peak Diode Recover

1.8. irf9520s.pdf Size:173K _international_rectifier

1.9. irf9520s sihf9520s.pdf Size:171K _vishay

IRF9520S, SiHF9520S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 100
Surface Mount
RDS(on) (?)VGS = — 10 V 0.60
Available in Tape and Reel
Qg (Max.) (nC) 18 Dynamic dV/dt Rating
Repetitive Avalanche Rated
Qgs (nC) 3.0
P-Channel
Qgd (nC) 9.0
175 C Operating Temperature
Fast Switching
Configur

1.10. irf9520 sihf9520.pdf Size:202K _vishay

IRF9520, SiHF9520
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) — 100
Available
Repetitive Avalanche Rated
RDS(on) (?)VGS = — 10 V 0.60
P-Channel RoHS*
Qg (Max.) (nC) 18
COMPLIANT
175 C Operating Temperature
Qgs (nC) 3.0
Fast Switching
Qgd (nC) 9.0
Ease of Paralleling
Configuration Single
Simple Drive Requirements
S
Compli

Другие MOSFET… IRF9230
, IRF9240
, IRF9410
, IRF9510
, IRF9510S
, IRF9511
, IRF9512
, IRF9513
, IRF8010
, IRF9520N
, IRF9520NL
, IRF9520NS
, IRF9521
, IRF9522
, IRF9523
, IRF9530
, IRF9530N
.

IRF9540NPBF Datasheet (PDF)

1.1. irf9540npbf.pdf Size:922K _upd-mosfet

PD — 94790A
IRF9540NPbF
• Lead-Free
www.irf.com 1
01/23/04
IRF9540NPbF
2 www.irf.com
IRF9540NPbF
www.irf.com 3
IRF9540NPbF
4 www.irf.com
IRF9540NPbF
www.irf.com 5
IRF9540NPbF
6 www.irf.com
IRF9540NPbF
www.irf.com 7
IRF9540NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) — B —
3.78 (.149)
10.29 (.405)
2.87 (.113) 4.69 (.185)

1.2. irf9540npbf.pdf Size:922K _international_rectifier

PD — 94790A
IRF9540NPbF
• Lead-Free
www.irf.com 1
01/23/04
IRF9540NPbF
2 www.irf.com
IRF9540NPbF
www.irf.com 3
IRF9540NPbF
4 www.irf.com
IRF9540NPbF
www.irf.com 5
IRF9540NPbF
6 www.irf.com
IRF9540NPbF
www.irf.com 7
IRF9540NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) — B —
3.78 (.149)
10.29 (.405)
2.87 (.113) 4.69 (.185)

 2.1. irf9540nlpbf irf9540nspbf.pdf Size:326K _upd-mosfet

PD — 96030
IRF9540NSPbF
IRF9540NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = -100V
l 150°C Operating Temperature
l Fast Switching
RDS(on) = 117mΩ
l Repetitive Avalanche Allowed up to Tjmax
G
l Some Parameters are Different from
IRF9540NS/L
ID = -23A
S
l P-Channel
l Lead-Free
D
Description
D
Features of this design are a 150

2.2. irf9540n.pdf Size:125K _international_rectifier

PD — 91437B
IRF9540N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -100V
175°C Operating Temperature
Fast Switching
RDS(on) = 0.117Ω
P-Channel
G
Fully Avalanche Rated
ID = -23A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon a

 2.3. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier

PD — 96030
IRF9540NSPbF
IRF9540NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = -100V
l 150°C Operating Temperature
l Fast Switching
RDS(on) = 117mΩ
l Repetitive Avalanche Allowed up to Tjmax
G
l Some Parameters are Different from
IRF9540NS/L
ID = -23A
S
l P-Channel
l Lead-Free
D
Description
D
Features of this design are a 150

2.4. irf9540ns.pdf Size:286K _international_rectifier

PD — 91483D
IRF9540NS/L
HEXFET Power MOSFET
l Advanced Process Technology
D
l Surface Mount (IRF9540S)
VDSS = -100V
l Low-profile through-hole (IRF9540L)
l 175°C Operating Temperature
RDS(on) = 0.117Ω
l Fast Switching
G
l P-Channel
ID = -23A
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques t

 2.5. irf9540n.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.117Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
rel

IRF9520N Datasheet (PDF)

1.1. irf9520nlpbf.pdf Size:418K _upd-mosfet

PD- 95764
IRF9520NSPbF
IF9520NLPbF
• Lead-Free
www.irf.com 1
04/26/05
IRF9520NS/LPbF
2 www.irf.com
IRF9520NS/LPbF
www.irf.com 3
IRF9520NS/LPbF
4 www.irf.com
IRF9520NS/LPbF
www.irf.com 5
IRF9520NS/LPbF
6 www.irf.com
IRF9520NS/LPbF
www.irf.com 7
IRF9520NS/LPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS A

1.2. irf9520n.pdf Size:95K _international_rectifier

PD — 91521A
IRF9520N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -100V
175C Operating Temperature
Fast Switching
RDS(on) = 0.48?
P-Channel
G
Fully Avalanche Rated
ID = -6.8A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Th

 1.3. irf9520ns.pdf Size:155K _international_rectifier

PD -91522A
IRF9520NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9520S) VDSS = -100V
Low-profile through-hole (IRF9520L)
175C Operating Temperature
RDS(on) = 0.48?
Fast Switching
G
P-Channel
ID = -6.8A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extrem

IRF9540N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF9540N

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 140
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 10
V

Максимально допустимый постоянный ток стока (Id): 23
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 64.7
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.117
Ohm

Тип корпуса: TO220AB

IRF9540N
Datasheet (PDF)

1.1. irf9540npbf.pdf Size:922K _upd-mosfet

PD — 94790A
IRF9540NPbF
• Lead-Free
www.irf.com 1
01/23/04
IRF9540NPbF
2 www.irf.com
IRF9540NPbF
www.irf.com 3
IRF9540NPbF
4 www.irf.com
IRF9540NPbF
www.irf.com 5
IRF9540NPbF
6 www.irf.com
IRF9540NPbF
www.irf.com 7
IRF9540NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) — B —
3.78 (.149)
10.29 (.405)
2.87 (.113) 4.69 (.185)

1.2. irf9540nlpbf irf9540nspbf.pdf Size:326K _upd-mosfet

PD — 96030
IRF9540NSPbF
IRF9540NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = -100V
l 150°C Operating Temperature
l Fast Switching
RDS(on) = 117mΩ
l Repetitive Avalanche Allowed up to Tjmax
G
l Some Parameters are Different from
IRF9540NS/L
ID = -23A
S
l P-Channel
l Lead-Free
D
Description
D
Features of this design are a 150

 1.3. irf9540n.pdf Size:125K _international_rectifier

PD — 91437B
IRF9540N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -100V
175C Operating Temperature
Fast Switching
RDS(on) = 0.117?
P-Channel
G
Fully Avalanche Rated
ID = -23A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Th

1.4. irf9540ns.pdf Size:286K _international_rectifier

PD — 91483D
IRF9540NS/L
HEXFET Power MOSFET
l Advanced Process Technology
D
l Surface Mount (IRF9540S)
VDSS = -100V
l Low-profile through-hole (IRF9540L)
l 175C Operating Temperature
RDS(on) = 0.117?
l Fast Switching
G
l P-Channel
ID = -23A
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achie

 1.5. irf9540n.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.117Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
rel

Другие MOSFET… IRF9530N
, APT5015BLC
, IRF9530NL
, IRF9530NS
, IRF9531
, IRF9532
, IRF9533
, IRF9540
, IRF540N
, IRF9540NL
, IRF9540NS
, IRF9541
, IRF9542
, IRF9543
, IRF9610
, IRF9610S
, IRF9611
.

IRF9540NSPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF9540NSPBF

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 110
W

Предельно допустимое напряжение сток-исток (Uds): 100
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 23
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 73
nC

Время нарастания (tr): 64
ns

Выходная емкость (Cd): 430
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.117
Ohm

Тип корпуса: TO-263

IRF9540NSPBF
Datasheet (PDF)

1.1. irf9540nlpbf irf9540nspbf.pdf Size:326K _upd-mosfet

PD — 96030
IRF9540NSPbF
IRF9540NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = -100V
l 150°C Operating Temperature
l Fast Switching
RDS(on) = 117mΩ
l Repetitive Avalanche Allowed up to Tjmax
G
l Some Parameters are Different from
IRF9540NS/L
ID = -23A
S
l P-Channel
l Lead-Free
D
Description
D
Features of this design are a 150

1.2. irf9540ns.pdf Size:286K _international_rectifier

PD — 91483D
IRF9540NS/L
HEXFET Power MOSFET
l Advanced Process Technology
D
l Surface Mount (IRF9540S)
VDSS = -100V
l Low-profile through-hole (IRF9540L)
l 175C Operating Temperature
RDS(on) = 0.117?
l Fast Switching
G
l P-Channel
ID = -23A
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achie

 2.1. irf9540npbf.pdf Size:922K _upd-mosfet

PD — 94790A
IRF9540NPbF
• Lead-Free
www.irf.com 1
01/23/04
IRF9540NPbF
2 www.irf.com
IRF9540NPbF
www.irf.com 3
IRF9540NPbF
4 www.irf.com
IRF9540NPbF
www.irf.com 5
IRF9540NPbF
6 www.irf.com
IRF9540NPbF
www.irf.com 7
IRF9540NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) — B —
3.78 (.149)
10.29 (.405)
2.87 (.113) 4.69 (.185)

2.2. irf9540n.pdf Size:125K _international_rectifier

PD — 91437B
IRF9540N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -100V
175C Operating Temperature
Fast Switching
RDS(on) = 0.117?
P-Channel
G
Fully Avalanche Rated
ID = -23A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Th

 2.3. irf9540n.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.117Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
rel

Другие MOSFET… IRF9530NPBF
, IRF9530NSPBF
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, IRF9530SPBF
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, IRF9540NPBF
, CEP83A3
, IRF9540PBF
, IRF9540S
, IRF9540SPBF
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IRF9540SPBF Datasheet (PDF)

1.1. irf9540s irf9540spbf.pdf Size:197K _upd-mosfet

IRF9540S, SiHF9540S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 100
• Surface Mount
RDS(on) ()VGS = — 10 V 0.20
• Available in Tape and Reel
Qg (Max.) (nC) 61 • Dynamic dV/dt Rating
• Repetitive Avalanche Rated
Qgs (nC) 14
• P-Channel
Qgd (nC) 29
• 175 °C Operating Temperature
• Fast

2.1. irf9540s.pdf Size:321K _international_rectifier

PD — 95699
IRF9540SPbF
Lead-Free
9/10/04
Document Number: 91079 www.vishay.com
1
IRF9540SPbF
Document Number: 91079 www.vishay.com
2
IRF9540SPbF
Document Number: 91079 www.vishay.com
3
IRF9540SPbF
Document Number: 91079 www.vishay.com
4
IRF9540SPbF
Document Number: 91079 www.vishay.com
5
IRF9540SPbF
Document Number: 91079 www.vishay.com
6
IRF9540SPbF
Peak Diode Recove

2.2. irf9540s sihf9540s.pdf Size:172K _vishay

IRF9540S, SiHF9540S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
Definition
VDS (V) — 100
Surface Mount
RDS(on) (?)VGS = — 10 V 0.20
Available in Tape and Reel
Qg (Max.) (nC) 61 Dynamic dV/dt Rating
Repetitive Avalanche Rated
Qgs (nC) 14
P-Channel
Qgd (nC) 29
175 C Operating Temperature
Fast Switching
Configurat

IRF9540NSPBF Datasheet (PDF)

1.1. irf9540nlpbf irf9540nspbf.pdf Size:326K _upd-mosfet

PD — 96030
IRF9540NSPbF
IRF9540NLPbF
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
VDSS = -100V
l 150°C Operating Temperature
l Fast Switching
RDS(on) = 117mΩ
l Repetitive Avalanche Allowed up to Tjmax
G
l Some Parameters are Different from
IRF9540NS/L
ID = -23A
S
l P-Channel
l Lead-Free
D
Description
D
Features of this design are a 150

1.2. irf9540ns.pdf Size:286K _international_rectifier

PD — 91483D
IRF9540NS/L
HEXFET Power MOSFET
l Advanced Process Technology
D
l Surface Mount (IRF9540S)
VDSS = -100V
l Low-profile through-hole (IRF9540L)
l 175C Operating Temperature
RDS(on) = 0.117?
l Fast Switching
G
l P-Channel
ID = -23A
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achie

 2.1. irf9540npbf.pdf Size:922K _upd-mosfet

PD — 94790A
IRF9540NPbF
• Lead-Free
www.irf.com 1
01/23/04
IRF9540NPbF
2 www.irf.com
IRF9540NPbF
www.irf.com 3
IRF9540NPbF
4 www.irf.com
IRF9540NPbF
www.irf.com 5
IRF9540NPbF
6 www.irf.com
IRF9540NPbF
www.irf.com 7
IRF9540NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) — B —
3.78 (.149)
10.29 (.405)
2.87 (.113) 4.69 (.185)

2.2. irf9540n.pdf Size:125K _international_rectifier

PD — 91437B
IRF9540N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating
VDSS = -100V
175C Operating Temperature
Fast Switching
RDS(on) = 0.117?
P-Channel
G
Fully Avalanche Rated
ID = -23A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Th

 2.3. irf9540n.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.117Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
rel

IRF9530N Datasheet (PDF)

1.1. irf9530npbf.pdf Size:225K _upd-mosfet


IRF9530NPbF

l Advanced Process Technology
D
l Dynamic dv/dt Rating DSS
l 175°C Operating Temperature
l Fast Switching
DS(on) Ω
l P-Channel
G
l Fully Avalanche Rated
D
l Lead-Free
S
Description

1.2. irf9530nspbf.pdf Size:761K _upd-mosfet

PD- 95439
IRF9530NSPbF
IRF9530NLPbF
• Lead-Free
www.irf.com 1
04/26/05
IRF9530NS/LPbF
2 www.irf.com
IRF9530NS/LPbF
www.irf.com 3
IRF9530NS/LPbF
4 www.irf.com
IRF9530NS/LPbF
www.irf.com 5
IRF9530NS/LPbF
6 www.irf.com
IRF9530NS/LPbF
www.irf.com 7
IRF9530NS/LPbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS

 1.3. irf9530n.pdf Size:113K _international_rectifier

PD — 91482C
IRF9530N
HEXFET Power MOSFET
Advanced Process Technology
D
Dynamic dv/dt Rating VDSS = -100V
175C Operating Temperature
Fast Switching
RDS(on) = 0.20?
P-Channel
G
Fully Avalanche Rated
ID = -14A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This

1.4. irf9530ns.pdf Size:173K _international_rectifier

PD — 91523A
IRF9530NS/L
HEXFET Power MOSFET
Advanced Process Technology
D
Surface Mount (IRF9530NS)
VDSS = -100V
Low-profile through-hole (IRF9530NL)
175C Operating Temperature
RDS(on) = 0.20?
Fast Switching
G
P-Channel
ID = -14A
Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
ex

 1.5. irf9530n.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.2Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
relia