Транзистор irf640

IRF630B Datasheet (PDF)

1.1. irf630b.pdf Size:859K _fairchild_semi

IRF630B/IRFS630B
200V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4? @VGS = 10 V
transistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)
planar, DMOS technology.
Low Crss ( typical 22 pF)
This advanced technology has been especially tailored to
Fast switching
minimize on-

1.2. irf630b.pdf Size:67K _no



 1.3. irf630b.pdf Size:142K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification
isc N-Channel MOSFET Transistor IRF630B
DESCRIPTION
·Drain Current –ID= 9A@ TC=25?
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4?(Max)
·Fast Switching Speed
APPLICATIONS
·Desinged for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters

IRF630NPBF Datasheet (PDF)

1.1. irf630nlpbf irf630npbf irf630nspbf.pdf Size:335K _upd-mosfet

PD — 95047A
IRF630NPbF
IRF630NSPbF
l Advanced Process Technology
IRF630NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
RDS(on) = 0.30Ω
G
l Lead-Free
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rec

3.1. irf630nstrrpbf.pdf Size:335K _update-mosfet

PD — 95047A
IRF630NPbF
IRF630NSPbF
l Advanced Process Technology
IRF630NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
RDS(on) = 0.30Ω
G
l Lead-Free
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rec

3.2. irf630n.pdf Size:155K _international_rectifier

PD — 94005A
IRF630N
IRF630NS
IRF630NL
Advanced Process Technology
HEXFET Power MOSFET
Dynamic dv/dt Rating
175C Operating Temperature D
VDSS = 200V
Fast Switching
Fully Avalanche Rated
RDS(on) = 0.30?
Ease of Paralleling
G
Simple Drive Requirements
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rectifier utilize advanced processing
te

 3.3. irf630n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF630N，IIRF630N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.3Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
· Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T

3.4. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF630NSTRRPBF
DESCRIPTION
·Drain Current –I =9.3A@ T =25℃
D C
·Drain Source Voltage-
: V = 200V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.3Ω(Max)
DS(on)
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This de

CS630F Datasheet (PDF)

1.1. cs630f.pdf Size:228K _update_mosfet

IRFS630(CS630F) N-Channel MOSFET/N 沟 MOS 晶体管
用途:用于高效 DC/DC 转换和功率开关。
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies.
特点: 低栅电荷,低反馈电容,开关速度快。
Features: Low gate charge, low crss, fast switching.
极限参数/Absolute maximum ratings(Ta=25℃)
参

1.2. cs630fa9h.pdf Size:832K _update_mosfet

Silicon N-Channel Power MOSFET
R
○
CS630F A9H
General Description：
VDSS 200 V
CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is
ID 9 A
PD(TC=25℃) 30 W
obtained by the self-aligned planar Technology which reduce the
RDS(ON)Typ 0.23 Ω
conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various
power

 1.3. cs630f a9h.pdf Size:712K _crhj

Silicon N-Channel Power MOSFET
R
○
CS630F A9H
General Description：
VDSS 200 V
CS630F A9H, the silicon N-channel Enhanced
ID 9 A
PD(TC=25℃) 30 W
VDMOSFETs, is obtained by the self-aligned planar Technology
RDS(ON)Typ 0.23 Ω
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power

IRF630N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF630N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 82
W

Предельно допустимое напряжение сток-исток (Uds): 200
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Максимально допустимый постоянный ток стока (Id): 9.5
A

Общий заряд затвора (Qg): 23.3
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.3
Ohm

Тип корпуса: TO220AB

IRF630N
Datasheet (PDF)

1.1. irf630nlpbf irf630npbf irf630nspbf.pdf Size:335K _upd-mosfet

PD — 95047A
IRF630NPbF
IRF630NSPbF
l Advanced Process Technology
IRF630NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
RDS(on) = 0.30Ω
G
l Lead-Free
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rec

1.2. irf630nstrrpbf.pdf Size:335K _update-mosfet

PD — 95047A
IRF630NPbF
IRF630NSPbF
l Advanced Process Technology
IRF630NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
RDS(on) = 0.30Ω
G
l Lead-Free
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rec

 1.3. irf630n.pdf Size:155K _international_rectifier

PD — 94005A
IRF630N
IRF630NS
IRF630NL
Advanced Process Technology
HEXFET Power MOSFET
Dynamic dv/dt Rating
175C Operating Temperature D
VDSS = 200V
Fast Switching
Fully Avalanche Rated
RDS(on) = 0.30?
Ease of Paralleling
G
Simple Drive Requirements
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rectifier utilize advanced processing
te

1.4. irf630n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF630N，IIRF630N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.3Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
· Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T

 1.5. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF630NSTRRPBF
DESCRIPTION
·Drain Current –I =9.3A@ T =25℃
D C
·Drain Source Voltage-
: V = 200V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.3Ω(Max)
DS(on)
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This de

Другие MOSFET… IRF4104G
, IRF4104S
, IRF540Z
, IRF540ZL
, IRF540ZS
, IRF5801
, IRF5802
, IRF6201
, IRFP460
, IRF630NL
, IRF630NS
, IRF640N
, IRF640NL
, IRF640NS
, IRF6603
, IRF6604
, IRF6607
.

IRF630NS Datasheet (PDF)

1.1. irf630nlpbf irf630npbf irf630nspbf.pdf Size:335K _upd-mosfet

PD — 95047A
IRF630NPbF
IRF630NSPbF
l Advanced Process Technology
IRF630NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
RDS(on) = 0.30Ω
G
l Lead-Free
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rec

1.2. irf630nstrrpbf.pdf Size:335K _update-mosfet

PD — 95047A
IRF630NPbF
IRF630NSPbF
l Advanced Process Technology
IRF630NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
RDS(on) = 0.30Ω
G
l Lead-Free
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rec

 1.3. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF630NSTRRPBF
DESCRIPTION
·Drain Current –I =9.3A@ T =25℃
D C
·Drain Source Voltage-
: V = 200V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.3Ω(Max)
DS(on)
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This de

IRF630N Datasheet (PDF)

1.1. irf630nlpbf irf630npbf irf630nspbf.pdf Size:335K _upd-mosfet

PD — 95047A
IRF630NPbF
IRF630NSPbF
l Advanced Process Technology
IRF630NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
RDS(on) = 0.30Ω
G
l Lead-Free
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rec

1.2. irf630nstrrpbf.pdf Size:335K _update-mosfet

PD — 95047A
IRF630NPbF
IRF630NSPbF
l Advanced Process Technology
IRF630NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
RDS(on) = 0.30Ω
G
l Lead-Free
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rec

 1.3. irf630n.pdf Size:155K _international_rectifier

PD — 94005A
IRF630N
IRF630NS
IRF630NL
Advanced Process Technology
HEXFET Power MOSFET
Dynamic dv/dt Rating
175C Operating Temperature D
VDSS = 200V
Fast Switching
Fully Avalanche Rated
RDS(on) = 0.30?
Ease of Paralleling
G
Simple Drive Requirements
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rectifier utilize advanced processing
te

1.4. irf630n.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF630N，IIRF630N
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.3Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
· Efficient and reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(T

 1.5. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF630NSTRRPBF
DESCRIPTION
·Drain Current –I =9.3A@ T =25℃
D C
·Drain Source Voltage-
: V = 200V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.3Ω(Max)
DS(on)
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This de

IRF630S Datasheet (PDF)

1.1. irf630spbf.pdf Size:196K _upd-mosfet

IRF630S, SiHF630S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) 200
Definition
RDS(on) ()VGS = 10 V 0.40
• Surface Mount
Qg (Max.) (nC) 43
• Available in Tape and Reel
Qgs (nC) 7.0
• Dynamic dV/dt Rating
Qgd (nC) 23
• Repetitive Avalanche Rated
Configuration Single
• Fast Switching
• Ease of Paralleli

1.2. irf630s.pdf Size:85K _st

IRF630S
?
N — CHANNEL 200V — 0.35? — 9A- D2PAK
MESH OVERLAY? MOSFET
TYPE VDSS RDS(on) ID
IRF630S 200 V

 1.3. irf630spbf.pdf Size:981K _international_rectifier

PD — 95118
IRF630SPbF
Lead-Free
3/17/04
Document Number: 91032 www.vishay.com
1
IRF630SPbF
Document Number: 91032 www.vishay.com
2
IRF630SPbF
Document Number: 91032 www.vishay.com
3
IRF630SPbF
Document Number: 91032 www.vishay.com
4
IRF630SPbF
Document Number: 91032 www.vishay.com
5
IRF630SPbF
Document Number: 91032 www.vishay.com
6
IRF630SPbF
D2Pak Package Outline
D

1.4. irf630s sihf630s.pdf Size:170K _vishay

IRF630S, SiHF630S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
VDS (V) 200
Definition
RDS(on) (?)VGS = 10 V 0.40
Surface Mount
Qg (Max.) (nC) 43
Available in Tape and Reel
Qgs (nC) 7.0
Dynamic dV/dt Rating
Qgd (nC) 23
Repetitive Avalanche Rated
Configuration Single
Fast Switching
Ease of Paralleling
Simple Drive

 1.5. irf630s.pdf Size:1779K _kexin

SMD Type MOSFET
N-Channel MOSFET
IRF630S (KRF630S)
■ Features
● VDS (V) = 200V
● ID = 9 A (VGS = 10V)
● RDS(ON) ＜ 400mΩ (VGS = 10V)
● Fast switching
● Low thermal resistance
d
g
s
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 200
V
Drain-Gate Voltage VDG 200
Gate-Source Voltage VGS ±20
Ta = 25℃ 9
Cont

IRF630NSPBF Datasheet (PDF)

1.1. irf630nlpbf irf630npbf irf630nspbf.pdf Size:335K _upd-mosfet

PD — 95047A
IRF630NPbF
IRF630NSPbF
l Advanced Process Technology
IRF630NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
RDS(on) = 0.30Ω
G
l Lead-Free
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rec

2.1. irf630nstrrpbf.pdf Size:335K _update-mosfet

PD — 95047A
IRF630NPbF
IRF630NSPbF
l Advanced Process Technology
IRF630NLPbF
l Dynamic dv/dt Rating
HEXFET Power MOSFET
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 200V
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
RDS(on) = 0.30Ω
G
l Lead-Free
Description
ID = 9.3A
Fifth Generation HEXFET Power MOSFETs from
S
International Rec

2.2. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF630NSTRRPBF
DESCRIPTION
·Drain Current –I =9.3A@ T =25℃
D C
·Drain Source Voltage-
: V = 200V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 0.3Ω(Max)
DS(on)
·Fast Switching Speed
·Low Drive Requirement
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This de

IRF630B MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF630B

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 72
W

Предельно допустимое напряжение сток-исток (Uds): 200
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 9
A

Максимальная температура канала (Tj): 150
°C

Сопротивление сток-исток открытого транзистора (Rds): 0.4
Ohm

Тип корпуса: TO220

IRF630B
Datasheet (PDF)

1.1. irf630b.pdf Size:859K _fairchild_semi

IRF630B/IRFS630B
200V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4? @VGS = 10 V
transistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)
planar, DMOS technology.
Low Crss ( typical 22 pF)
This advanced technology has been especially tailored to
Fast switching
minimize on-

1.2. irf630b.pdf Size:67K _no



 1.3. irf630b.pdf Size:142K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification
isc N-Channel MOSFET Transistor IRF630B
DESCRIPTION
·Drain Current –ID= 9A@ TC=25?
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4?(Max)
·Fast Switching Speed
APPLICATIONS
·Desinged for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters

Другие MOSFET… SMG2301
, SMG2301P
, SMG2302
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, IRF1404
, SMG2306NE
, SMG2310A
, SMG2310N
, SMG2314N
, SMG2314NE
, SMG2318N
, SMG2319P
, SMG2321P
.

CS630F MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: CS630F

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 38
W

Предельно допустимое напряжение сток-исток (Uds): 200
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 9
A

Максимальная температура канала (Tj): 150
°C

Время нарастания (tr): 60
ns

Выходная емкость (Cd): 85
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.4
Ohm

Тип корпуса: TO-220F

CS630F
Datasheet (PDF)

1.1. cs630f.pdf Size:228K _update_mosfet

IRFS630(CS630F) N-Channel MOSFET/N 沟 MOS 晶体管
用途:用于高效 DC/DC 转换和功率开关。
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies.
特点: 低栅电荷,低反馈电容,开关速度快。
Features: Low gate charge, low crss, fast switching.
极限参数/Absolute maximum ratings(Ta=25℃)
参

1.2. cs630fa9h.pdf Size:832K _update_mosfet

Silicon N-Channel Power MOSFET
R
○
CS630F A9H
General Description：
VDSS 200 V
CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is
ID 9 A
PD(TC=25℃) 30 W
obtained by the self-aligned planar Technology which reduce the
RDS(ON)Typ 0.23 Ω
conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various
power

 1.3. cs630f a9h.pdf Size:712K _crhj

Silicon N-Channel Power MOSFET
R
○
CS630F A9H
General Description：
VDSS 200 V
CS630F A9H, the silicon N-channel Enhanced
ID 9 A
PD(TC=25℃) 30 W
VDMOSFETs, is obtained by the self-aligned planar Technology
RDS(ON)Typ 0.23 Ω
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power

Другие MOSFET… SMG2301
, SMG2301P
, SMG2302
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, IRF1404
, SMG2306NE
, SMG2310A
, SMG2310N
, SMG2314N
, SMG2314NE
, SMG2318N
, SMG2319P
, SMG2321P
.

IRFS630 Datasheet (PDF)

1.1. irfs630a.pdf Size:508K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 200 V
Avalanche Rugged Technology
RDS(on) = 0.4 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 6.5 A
Improved Gate Charge
Extended Safe Operating Area

Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Low RDS(ON) : 0.333 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units

4.1. irfs634b.pdf Size:858K _upd

November 2001
IRF634B/IRFS634B
250V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC)
planar, DMOS technology.
• Low Crss ( typical 20 pF)
This advanced technology has been especially tailored to

4.2. irf634b irfs634b.pdf Size:859K _fairchild_semi

November 2001
IRF634B/IRFS634B
250V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45? @VGS = 10 V
transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)
planar, DMOS technology.
Low Crss ( typical 20 pF)
This advanced technology has been especially tailored to
Fast switchi

 4.3. irfs634a.pdf Size:505K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 250 V
Avalanche Rugged Technology
RDS(on) = 0.45
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 5.8 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 250V
Lower RDS(ON) : 0.327 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Uni