2n60

Содержание:

IXFH50N60P3 Datasheet (PDF)
SSP2N60B Datasheet (PDF)
FQPF2N60C Datasheet (PDF)
FQU2N60C Datasheet (PDF)
CM2N60F Datasheet (PDF)
AP02N60P Datasheet (PDF)
IXFH18N60P Datasheet (PDF)
NDT6N60P Datasheet (PDF)
SW2N60 Datasheet (PDF)
HFS2N60 Datasheet (PDF)
WFF2N60B Datasheet (PDF)

IXFH50N60P3 Datasheet (PDF)

1.1. ixfh50n60x ixfq50n60x ixft50n60x.pdf Size:184K _ixys

Preliminary Technical Information
X-Class HiPerFETTM VDSS = 600V
IXFT50N60X
Power MOSFET ID25 = 50A
IXFQ50N60X
 
RDS(on)  
 73m
 
 
IXFH50N60X
N-Channel Enhancement Mode
TO-268 (IXFT)
Avalanche Rated
Fast Intrinsic Diode
G
S
D (Tab)
TO-3P (IXFQ)
Symbol Test Conditions Maximum Ratings
G
VDSS TJ = 25C to 150C 600 V
D
VDGR TJ = 25C to 1

3.1. ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf Size:139K _update

Polar3TM HiperFETTM VDSS = 500V
IXFT50N50P3
ID25 = 50A
Power MOSFET
IXFQ50N50P3
 
RDS(on)  
 125m
 
 
IXFH50N50P3
N-Channel Enhancement Mode
TO-268 (IXFT)
Avalanche Rated
Fast Intrinsic Rectifier
G
S
D (Tab)
TO-3P (IXFQ)
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25C to 150C 500 V
G
VDGR TJ = 25C to 150C, RGS = 1M 500 V
D

3.2. ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf Size:104K _ixys

VDSS ID25 RDS(on)
HiPerFETTM
Power MOSFETs 200 V 42 A 60mW
IXFH/IXFM42N20
200 V 50 A 45mW
IXFH/IXFM/IXFT50N20
200 V 58 A 40mW
IXFH/IXFT58N20
N-Channel Enhancement Mode
trr ? 200 ns
High dv/dt, Low trr, HDMOSTM Family
TO-247 AD (IXFH)
(TAB)
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25C to 150C 200 V
VDGR TJ = 25C to 150C; RGS = 1 MW 200 V TO-268 (D3) Case Style
VGS Contin

SSP2N60B Datasheet (PDF)

10n60

1.1. ssp2n60b sss2n60b.pdf Size:862K _fairchild_semi

SSP2N60B/SSS2N60B
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC)
planar, DMOS technology.
• Low Crss ( typical 7.6 pF)
This advanced technology has been especially tailored to
• Fast swit

3.1. ssp2n60a.pdf Size:939K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 600 V
Avalanche Rugged Technology
RDS(on) = 5.0
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 2 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 600V
Lower RDS(ON) : 3.892 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units

5.1. ssp2n80a.pdf Size:931K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 800 V
Avalanche Rugged Technology
RDS(on) = 6.0 ?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 2 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 800V
Low RDS(ON) : 4.688 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units
VDS

5.2. ssp2n90a.pdf Size:934K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 900 V
Avalanche Rugged Technology
RDS(on) = 7.0
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 2 A
Improved Gate Charge
Extended Safe Operating Area
?
Lower Leakage Current : 25 A (Max.) @ VDS = 900V
Low RDS(ON) : 5.838 ? (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units

FQPF2N60C Datasheet (PDF)

8n60c

1.1. fqp2n60c fqpf2n60c.pdf Size:1366K _fairchild_semi

April 2006

QFET
FQP2N60C/FQPF2N60C
2.0A, 600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • rDS(on) = 4.7Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 8.5 nC)
planar stripe, DMOS technology.
• Low Crss (typical 4.3 pF)
This advanced technology has been especially tailo

2.1. fqpf2n60.pdf Size:561K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQPF2N60
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.0 pF)
This advanced technology has been

4.1. fqpf2n40.pdf Size:725K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

400V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 1.1A, 400V, RDS(on) = 5.8Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 3.0 pF)
This advanced technology has bee

4.2. fqpf2na90.pdf Size:677K _fairchild_semi

September 2000
TM
QFET
QFET
QFET
QFET
FQPF2NA90
900V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1.7A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 6.5 pF)
This advanced technology has

4.3. fqpf2n90.pdf Size:726K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

900V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 1.4A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.5 pF)
This advanced technology has be

4.4. fqpf2n80ydtu.pdf Size:966K _fairchild_semi

July 2013
FQPF2N80YDTU
N-Channel QFET MOSFET
8 0 V, 1.5 A, Ω
Features
Description
This N-Channel enhancement mode power MOSFET is
• 1.5 A, 8 0 V, RDS(on)= Ω(Max.)@VGS=10 V, ID=0.75 A
produced using Fairchild Semiconductor’s proprietary
• Low Gate Charge (Typ. 12 nC)
planar stripe and DMOS technology. This advanced
• Low Crss (Typ. 5.5 pF)
MOSFET technolog

4.5. fqpf2n30.pdf Size:732K _fairchild_semi

May 2000
TM
QFET
QFET
QFET
QFET

300V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 1.34A, 300V, RDS(on) = 3.7Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 3.7 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 3.0 pF)
This advanced technology has been

4.6. fqpf2n50.pdf Size:711K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

500V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 1.3A, 500V, RDS(on) = 5.3Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 4.0 pF)
This advanced technology has bee

4.7. fqpf2n80.pdf Size:619K _fairchild_semi

September 2000
TM
QFET
FQPF2N80
800V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1.5A, 800V, RDS(on) = 6.3Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.5 pF)
This advanced technology has been especially tail

4.8. fqpf2n70.pdf Size:622K _fairchild_semi

TM
QFET
FQPF2N70
700V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.0A, 700V, RDS(on) = 6.3Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.0 pF)
This advanced technology has been especially tailored to
• Fa

FQU2N60C Datasheet (PDF)

4n60

1.1. fqd2n60c fqu2n60c fqu2n60ctu.pdf Size:762K _fairchild_semi

January 2009
QFET
FQD2N60C/FQU2N60C
600V N-Channel MOSFET
Features Description
• 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge (typical 8.5 nC)
DMOS technology.
• Low Crss (typical 4.3 pF)
This advanced technology has been especially tail

3.1. fqd2n60tf fqd2n60tm fqu2n60tu.pdf Size:560K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD2N60 / FQU2N60
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.0 pF)
This advanced technology

5.1. fqd2n100tf fqd2n100tm fqd2n100 fqu2n100 fqu2n100tu.pdf Size:731K _fairchild_semi

January 2009
QFET
FQD2N100/FQU2N100
1000V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1.6A, 1000V, RDS(on) = 9Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5 pF)
This advanced technology has been especially t

5.2. fqu2n50btu.pdf Size:598K _fairchild_semi

May 2000
TM
QFET
QFET
QFET
QFET
FQD2N50B / FQU2N50B
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 4.0 pF)
This advanced technology

5.3. fqu2n90.pdf Size:1291K _fairchild_semi

January 2014
FQD2N90 / FQU2N90
N-Channel QFET MOSFET
900 V, 1.7 A, 7.2 Ω
Description Features
This N-Channel enhancement mode power MOSFET is • 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary ID = 0.85 A
planar stripe and DMOS technology. This advanced
• Low Gate Charge (Typ. 12 nC)
MOSFET technology has been especiall

5.4. fqd2n90tf fqd2n90tm fqd2n90 fqu2n90 fqu2n90tu.pdf Size:841K _fairchild_semi

January 2009
QFET
FQD2N90 / FQU2N90
900V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 1.7A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.5 pF)
This advanced technology has been especi

5.5. fqu2n50b.pdf Size:731K _fairchild_semi

November 2013
FQU2N50B
N-Channel QFET MOSFET
500 V, 1.6 A, 5.3 Ω
Description Features
This N-Channel enhancement mode power MOSFET is • 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary ID = 0.8 A
planar stripe and DMOS technology. This advanced
• Low Gate Charge (Typ. 6.0 nC)
MOSFET technology has been especially tailo

5.6. fqd2n80tf fqd2n80tm fqd2n80 fqu2n80 fqu2n80 fqu2n80tu.pdf Size:724K _fairchild_semi

January 2008
QFET
FQD2N80 / FQU2N80
800V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 5.5 pF)
This advanced technology has been especially

CM2N60F Datasheet (PDF)

1.1. cm2n60f.pdf Size:145K _jdsemi

R
CM2N60F
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET
◆600V N-Channel VDMOS
◆使用及贮存时需防静电
使用及贮存时需防静电
使用及贮存时需防静电
使用及贮存时需防静电
◆符合 RoHS 等

4.1. cm2n60.pdf Size:143K _jdsemi

R
CM2N60
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET
◆600V N-Channel VDMOS
◆使用及贮存时需防静电
使用及贮存时需防静电
使用及贮存时需防静电
使用及贮存时需防静电
◆符合 RoHS 等

4.2. cm2n60c to251.pdf Size:143K _jdsemi

R
CM2N60C
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET
◆600V N-Channel VDMOS
◆使用及贮存时需防静电
使用及贮存时需防静电
使用及贮存时需防静电
使用及贮存时需防静电
◆符合 RoHS 等

4.3. cm2n60c.pdf Size:122K _jdsemi

R
CM2N60C
深圳市晶导电子有限公司
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET
◆600V N-Channel VDMOS
◆使用及贮存时需防静电
◆符合 RoHS 等环保指令要求
1．主要用途
2
主要用于充电器、LD驱动、P 辅助
E C
电源等各类功率开关电路
1
2
2．主要特点
开关速度快
通态电阻小，输入电

AP02N60P Datasheet (PDF)

1.1. ap02n60p-a-hf.pdf Size:56K _ape

AP02N60P-A-HF
Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 650V
▼ Fast Switching Characteristics RDS(ON) 8Ω
▼ Simple Drive Requirement ID 2A
▼ RoHS Compliant & Halogen-Free
G
D TO-220
S
Description
D
The TO-220 package is widely preferred for all commercial-industrial
applications. The device is

1.2. ap02n60p-hf.pdf Size:55K _ape

AP02N60P-HF
Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 600V
D
▼ Fast Switching Characteristics RDS(ON) 8Ω
▼ Simple Drive Requirement ID 2A
G
▼ Halogen Free & RoHS Compliant
S
Description
The TO-220 package is universally preferred for all commercial-
G
industrial applications. The device is sui

1.3. ap02n60p.pdf Size:69K _ape

AP02N60P
Pb Free Plating Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼Repetitive Avalanche Rated BVDSS 600V
▼
▼
▼
▼Fast Switching RDS(ON) 8Ω
▼
▼
▼
▼Simple Drive Requirement ID 2A
▼
▼
▼
▼ RoHS Compliant
▼
▼
▼
G
D
TO-220
S
Description
D
The TO-220 package is universally preferred for all commerci

IXFH18N60P Datasheet (PDF)

1.1. ixfh18n60p ixfv18n60p.pdf Size:172K _ixys

IXFH 18N60P VDSS = 600 V
PolarHVTM HiPerFET
IXFV 18N60P ID25 = 18 A
Power MOSFET
? ?
IXFV 18N60PS RDS(on) ? 400 m?
? ?
? ?
? ?
N-Channel Enhancement Mode
?
trr ? 200 ns
?
?
?
Fast Intrinsic Diode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
TO-247 AD (IXFH)
VDSS TJ = 25C to 150C 600 V
VDGR TJ = 25C to 150C; RGS = 1 M? 600 V
VGS Continuous 30 V
VGSM Tranisent 4

1.2. ixfa18n60x ixfh18n60x ixfp18n60x.pdf Size:183K _ixys

Preliminary Technical Information
X-Class HiPerFETTM VDSS = 600V
IXFA18N60X
Power MOSFET ID25 = 18A
IXFP18N60X
 
RDS(on)  
 230m
 
 
IXFH18N60X
TO-263 AA (IXFA)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G
S
D (Tab)
TO-220AB (IXFP)
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25C to 150C 600 V
VDGR TJ = 25C to

3.1. ixfh18n100q3 ixft18n100q3.pdf Size:130K _ixys

Advance Technical Information
HiperFETTM VDSS = 1000V
IXFT18N100Q3
Power MOSFETs ID25 = 18A
IXFH18N100Q3
≤ Ω
Q3-Class RDS(on) ≤ Ω
≤ 660mΩ
≤ Ω
≤ Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-268 (IXFT)
Fast Intrinsic Rectifier
G
S
D (Tab)
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 1000 V
TO-247 (IXFH)
VDGR TJ = 25°C to 150°C, RGS = 1M

NDT6N60P Datasheet (PDF)

1.1. ndt6n60p.pdf Size:1327K _kexin

DIP Type MOSFET
N-Channel MOSFET
NDT6N60P
TO-251
■ Features
● VDS (V) = 600V
1 2 3
● ID = 6.2 A (VGS = 10V)
● RDS(ON) ＜ 1.5Ω (VGS = 10V)
● Fast switching capability
● Low reverse transfer Capacitance
1 3
2
Drain
Unit: mm
Gate
Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 600
V
Gate-Source Voltage V

3.1. ndt6n60.pdf Size:1815K _kexin

SMD Type MOSFET
N-Channel MOSFET
NDT6N60
TO-252
Unit: mm
6.50+0.15
-0.15
+0.1
2.30 -0.1
5.30+0.2
-0.2 +0.8
0.50 -0.7
■ Features
4
● VDS (V) = 600V
● ID = 6 A (VGS = 10V)
● RDS(ON) ＜ 1.7Ω (VGS = 10V) 0.127
0.80+0.1 max
-0.1
● Low Gate Charge
● Low Reverse transfer capacitances
1 Gate
2.3 0.60+ 0.1
— 0.1
2 Drain
+0.15
4.60 -0.15
3 Source
4 Drain

4.1. ndt6n65p.pdf Size:3425K _kexin

DIP Type MOSFET
N-Channel Enhancement MOSFET
NDT6N65P
TO-251
■ Features
● VDS (V) = 650V
1 2 3
● ID = 4.8A (VGS = 10V)
● RDS(ON) ＜ 1.8Ω (VGS = 10V)
D
● Low gate charge ( typical 16nC)
1 3
2
G
S
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 650
V
Gate-Source Voltage VGS ±30
Tc=25℃ 4.8
Continuou

SW2N60 Datasheet (PDF)

1.1. ssi2n60b ssw2n60b.pdf Size:647K _upd-mosfet

November 2001
SSW2N60B / SSI2N60B
600V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12.5 nC)
planar, DMOS technology.
• Low Crss ( typical 7.6 pF)
This advanced technology has been especially tailored

1.2. sw2n60.pdf Size:797K _update-mosfet

SW2N60
SW2N60
SAMWIN
N-channel MOSFET
BVDSS : 600V
TO-220F TO-220 TO-251
Features
ID : 2.0A
■ High ruggedness
RDS(ON) : 5.0ohm
■ RDS(ON) (Max 5.0 Ω)@VGS=10V
■ Gate Charge (Typical 15nC)
■ Improved dv/dt Capability
2
■ 100% Avalanche Tested 1
1
2 1 2
3 2 3 3
1
1. Gate 2. Drain 3. Source
General Description
3
This power MOSFET is produced wit

1.3. sw2n60b.pdf Size:443K _update-mosfet

SAMWIN SW2N60B
N-channel MOSFET
TO-220F IPAK DPAK TO-126
BVDSS : 600V
Features
ID : 2.0A
■ High ruggedness
RDS(ON) : 4.5ohm
■ RDS(ON) (Max 4.5 Ω)@VGS=10V
■ Gate Charge (Typical 7.5nC)
2
■ Improved dv/dt Capability
1
2
1
2 1
■ 100% Avalanche Tested
3
1 3 2
2
3
3
1
1. Gate 2. Drain 3. Source
General Description
3
This power MOSFET is

1.4. sw2n60a1.pdf Size:895K _update-mosfet

SAMWIN SW2N60A1
SW2N60A1
N-channel IPAK/TO-220F MOSFET
TO-251 TO-220F
BVDSS : 600V
Features
ID : 2.0A
■ High ruggedness
RDS(ON) : 5.0ohm
■ RDS(ON) (Max 5.0 Ω)@VGS=10V
■ Gate Charge (Typical 10nC)
■ Improved dv/dt Capability
1 1
2
■ 100% Avalanche Tested
2 2
3 3
1. Gate 2. Drain 3. Source
1
General Description
3
This power MOSFET is produced w

1.5. sw2n60d.pdf Size:739K _update-mosfet

SAMWIN SW2N60D
N-channel I-PAK/D-PAK/TO220F MOSFET
BVDSS : 600V
Features TO-252
TO-251 TO-220F
ID : 2A
■ High ruggedness
RDS(ON) : 4.5Ω
■ RDS(ON) (Max 4.5Ω)@VGS=10V
■ Gate Charge (Typ 9nC)
■ Improved dv/dt Capability 1
1 2 1
■ 100% Avalanche Tested 2 3 2
2
3 3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with ad

1.6. ssw2n60b ssi2n60b.pdf Size:648K _fairchild_semi

1.7. ssi2n60b ssi2n60b ssw2n60b.pdf Size:647K _fairchild_semi

1.8. ssw2n60a.pdf Size:509K _samsung

Advanced Power MOSFET
FEATURES
BVDSS = 600 V
Avalanche Rugged Technology
RDS(on) = 5.0
?
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 2 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ VDS = 600V
2
Lower RDS(ON) : 3.892 ? (Typ.)
1
1
2
3
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristi

HFS2N60 Datasheet (PDF)

1.1. hfs2n60s.pdf Size:161K _update_mosfet

March 2014
BVDSS = 600 V
RDS(on) typ
HFS2N60S
ID = 2.0 A
600V N-Channel MOSFET
TO-220F
FEATURES
1
Originative New Design
2
3
Superior Avalanche Rugged Technology
1.Gate 2. Drain 3. Source
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 6.0 nC (Typ.)
Extended Safe Operating Area

1.2. hfs2n60u.pdf Size:301K _update_mosfet

Nov 2013
BVDSS = 600 V
RDS(on) typ
HFS2N60U
ID = 2 A
600V N-Channel MOSFET
TO-220F
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
1
2
3
Robust Gate Oxide Technology
1.Gate 2. Drain 3. Source
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 5.5 nC (Typ.)
Extended Safe Operating Area
Lower

1.3. hfs2n60.pdf Size:150K _update_mosfet

July 2005
BVDSS = 600 V
RDS(on) typ
HFS2N60
ID = 2.0 A
600V N-Channel MOSFET
TO-220F
FEATURES
1
Originative New Design
2
3
Superior Avalanche Rugged Technology
1.Gate 2. Drain 3. Source
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 9.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS

WFF2N60B Datasheet (PDF)

1.1. wff2n60b.pdf Size:613K _update_mosfet

WFF2N60B
WFF2N60B
WFF2N60B
WFF2N60B
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 2A,600V,R (Max 5.0Ω)@V =10V
DS(on) GS
� Ultra-low Gate Charge(Typical 9nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced u

3.1. wff2n60.pdf Size:386K _update_mosfet

WFF2N60
WFF2N60
WFF2N60
WFF2N60
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
■2A,600V, R (Max 5Ω)@V =10V
DS(on) GS
■ Ultra-low Gate Charge(Typical 9.0nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( V = 4000V AC )
ISO
■ Maximum Junction Temperature Range(150℃)
General Desc

4.1. wff2n65.pdf Size:785K _winsemi

WFF2N65
WFF2N65
WFF2N65
WFF2N65
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 2A,650V(Type),R (Max 5Ω)@V =10V
DS(on) GS
� Ultra-low Gate Charge(Typical 9.0nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage(V =4000V AC)
ISO
� Maximum Junction Temperature Range(150℃)
� Halog

4.2. wff2n65b.pdf Size:537K _winsemi

WFF2N65B
WFF2N65B
WFF2N65B
WFF2N65B
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 2A,650V(Type),R (Max 5Ω)@V =10V
DS(on) GS
� Ultra-low Gate Charge(Typical 9.0nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage(V =4000V AC)
ISO
� Maximum Junction Temperature Range(150℃)
Gener