Ao3401

Содержание:

AO3400A Datasheet (PDF)
MJE340 Datasheet (PDF)
AO3401 Datasheet (PDF)
2SC3401 Datasheet (PDF)
BLM3401A Datasheet (PDF)
BLM3401 Datasheet (PDF)
AO3451 Datasheet (PDF)
GM3401 Datasheet (PDF)
2SC3402 Datasheet (PDF)
GSM3401S Datasheet (PDF)

AO3400A Datasheet (PDF)

1.1. ao3400a.pdf Size:471K _aosemi

AO3400A
30V N-Channel MOSFET
General Description Product Summary
VDS
30V
The AO3400A combines advanced trench MOSFET
technology with a low resistance package to provide
ID (at VGS=10V) 5.7A
extremely low RDS(ON). This device is suitable for use as a
RDS(ON) (at VGS=10V) 1.2. ao3400a-3.pdf Size:1871K _kexin

SMD Type MOSFET
N-Channel MOSFET
AO3400A (KO3400A)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● VDS (V) = 30V
● ID = 5.7 A (VGS = 10V)
● RDS(ON) ＜ 26.5mΩ (VGS = 10V) 1 2
+0.02
+0.1
0.15 -0.02
0.95 -0.1
● RDS(ON) ＜ 32mΩ (VGS = 4.5V)
+0.1
1.9 -0.2
● RDS(ON) ＜ 48mΩ (VGS = 2.5V)
1. Gate
2. Source
D
D
3. Drain
G
G
S
S
■ Absol

1.3. ao3400a.pdf Size:1866K _kexin

SMD Type MOSFET
N-Channel MOSFET
AO3400A (KO3400A)
SOT-23
Unit: mm
+0.1
2.9 -0.1
0.4+0.1
-0.1
3
■ Features
● VDS (V) = 30V
● ID = 5.7 A (VGS = 10V)
1 2
● RDS(ON) ＜ 26.5mΩ (VGS = 10V)
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
● RDS(ON) ＜ 32mΩ (VGS = 4.5V)
● RDS(ON) ＜ 48mΩ (VGS = 2.5V)
1. Gate
2. Source
3. Drain
D
D
G
G
S
S
■ Absolute

MJE340 Datasheet (PDF)

Fgh40n60

1.1. mje340g.pdf Size:67K _update

MJE340
Plastic Medium-Power
NPN Silicon Transistor
This device is useful for high-voltage general purpose applications.
Features
http://onsemi.com
• Suitable for Transformerless, Line-Operated Equipment
• Thermopad Construction Provides High Power Dissipation Rating
0.5 AMPERE
for High Reliability
• Pb-Free Package is Available*
POWER TRANSISTOR
NPN SILICON
300 VOLTS, 20 WATT

1.2. mje340re.pdf Size:117K _motorola

Order this document
MOTOROLA
by MJE340/D
SEMICONDUCTOR TECHNICAL DATA
MJE340
Plastic Medium Power NPN
0.5 AMPERE
Silicon Transistor
POWER TRANSISTOR
NPN SILICON
. . . useful for highvoltage general purpose applications.
300 VOLTS
Suitable for Transformerless, LineOperated Equipment
20 WATTS
Thermopad Construction Provides High Power Dissipation Rating for High
Reliability
III

1.3. mje340-mje350.pdf Size:66K _st

MJE340
MJE350
COMPLEMETARY SILICON POWER TRANSISTORS
SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP — NPN DEVICES
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The MJE340 is a silicon epitaxial planar NPN
1
2
transistor intended for use in medium power
3
linear and switching applications.It is mounted in
SOT-32.
The complementary PNP type is MJE350. SOT-

1.4. mje340 mje350.pdf Size:501K _st

MJE340
MJE350

COMPLEMETARY SILICON POWER TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP — NPN DEVICES
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
1
2
The MJE340 is a Silicon Epitaxial Planar NPN
3
transistor intended for use in medium power
linear and switching applications. It is mounted in
SOT-32.
SOT-32
The complementary P

1.5. mje340.pdf Size:37K _fairchild_semi

MJE340
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE350
TO-126
1
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V
VEBO

1.6. mje340-d.pdf Size:67K _onsemi

MJE340
Plastic Medium-Power
NPN Silicon Transistor
This device is useful for high-voltage general purpose applications.
Features
http://onsemi.com
Suitable for Transformerless, Line-Operated Equipment
Thermopad Construction Provides High Power Dissipation Rating
0.5 AMPERE
for High Reliability
Pb-Free Package is Available*
POWER TRANSISTOR
NPN SILICON
300 VOLTS, 20 WATTS
MAXIMU

1.7. mje340.pdf Size:238K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340
TO126
Plastic Package
E
C
B
For use in High Voltage General Purpose Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Emitter Voltage VCEO 300 V
Collector Base Voltage VCBO 300 V
VEBO
Emitter Base Voltage 3.0 V
IC
C

1.8. mje340t.pdf Size:208K _inchange_semiconductor

isc Silicon NPN Power Transistor MJE340T
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: V = 300 V(Min)
CEO(SUS)
·DC Current Gain-
: h = 100(Min) @ I = 50mA
FE C
·Low Collector Saturation Voltage-
: V = 1.0V(Max.)@ I = 50mA
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage and general p

1.9. mje340.pdf Size:212K _inchange_semiconductor

isc Silicon NPN Power Transistor MJE340
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: V = 300 V(Min)
CEO(SUS)
·DC Current Gain-
: h = 100(Min) @ I = 50mA
FE C
·Low Collector Saturation Voltage-
: V = 1.0V(Max.)@ I = 50mA
CE(sat) C
·Complement to the PNP MJE350
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed

AO3401 Datasheet (PDF)

1am smd транзистор даташит

1.1. ao3401.pdf Size:1439K _htsemi

AO3401
30V P-Channel Enhancement Mode MOSFET
V = -30V
DS
R , V
Ω
DS(ON) gs@-10V, I
ds@-4.2A 1.2. ao3401.pdf Size:497K _aosemi

AO3401
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
The AO3401 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
ID (at VGS=-10V) -4.0A
voltages as low as 2.5V. This device is suitable for use as
RDS(ON) (at VGS=-10V)

1.3. ao3401a-3.pdf Size:1320K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3401A (KO3401A)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● VDS (V) =-30V
● ID =-4 A (VGS =-10V)
1 2
● RDS(ON) ＜ 50mΩ (VGS =-10V)
+0.02
+0.1
0.15 -0.02
0.95 -0.1
+0.1
● RDS(ON) ＜ 60mΩ (VGS =-4.5V)
1.9 -0.2
● RDS(ON) ＜ 85mΩ (VGS =-2.5V)
1. Gate
2. Source
D
3. Drain
G
S
■ Absolute Maximum R

1.4. ao3401hf.pdf Size:1580K _kexin

SMD Type MOSFET
P-Channel Enhancement MOSFET
AO3401 HF (KO3401 HF)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
■ Features
+0.1
0.4-0.1
● VDS (V) =-30V 3
● ID =-4.2 A (VGS =-10V)
● RDS(ON) ＜ 50mΩ (VGS =-10V)
● RDS(ON) ＜ 65mΩ (VGS =-4.5V) 1 2
D
+0.02
+0.1
0.15 -0.02
0.95 -0.1
● RDS(ON) ＜ 120mΩ (VGS =-2.5V)
+0.1
1.9 -0.2
G
1. Gate
S
2. Source
3. Drain
■ A

1.5. ao3401.pdf Size:1535K _kexin

SMD Type MOSFET
P-Channel Enhancement MOSFET
AO3401 (KO3401)
SOT-23
Unit: mm
2.9+0.1
-0.1
+0.1
0.4-0.1
■ Features
3
● VDS (V) =-30V
● ID =-4.2 A (VGS =-10V)
● RDS(ON) ＜ 50mΩ (VGS =-10V)
1 2
+0.1
● RDS(ON) ＜ 65mΩ (VGS =-4.5V) +0.05
0.95 -0.1 0.1 -0.01
D
+0.1
1.9 -0.1
● RDS(ON) ＜ 120mΩ (VGS =-2.5V)
1. Gate
G
2. Source
S
3. Drain
■ Absolute M

1.6. ao3401a.pdf Size:1315K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3401A (KO3401A)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
■ Features 3
● VDS (V) =-30V
● ID =-4 A (VGS =-10V)
● RDS(ON) ＜ 50mΩ (VGS =-10V) 1 2
+0.1
+0.05
0.95-0.1 0.1-0.01
● RDS(ON) ＜ 60mΩ (VGS =-4.5V)
+0.1
1.9-0.1
● RDS(ON) ＜ 85mΩ (VGS =-2.5V)
1. Gate
2. Source
D
3. Drain
G
S
■ Absolute Maximum Ratings T

1.7. ao3401-3.pdf Size:1562K _kexin

SMD Type MOSFET
P-Channel Enhancement MOSFET
AO3401 (KO3401)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
■ Features
+0.1
0.4-0.1
● VDS (V) =-30V 3
● ID =-4.2 A (VGS =-10V)
● RDS(ON) ＜ 50mΩ (VGS =-10V)
● RDS(ON) ＜ 65mΩ (VGS =-4.5V) 1 2
D
+0.02
+0.1
0.15 -0.02
0.95 -0.1
● RDS(ON) ＜ 120mΩ (VGS =-2.5V)
+0.1
1.9 -0.2
G
1. Gate
S
2. Source
3. Drain
■ Absolu

2SC3401 Datasheet (PDF)

P60nf06

1.1. 2sc3401.pdf Size:87K _sanyo

4.1. 2sc3405.pdf Size:209K _toshiba

2SC3405
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3405
Industrial Applications
Switching Regulator and High Voltage Switching
Unit: mm
Applications
High Speed DC-DC Converter Applications
• Excellent switching times: tr = 1.0 µs (max)
t = 1.0 µs (max), (I = 0.3 A)
f C
• High collector breakdown voltage: V = 800 V
CEO
Maximum Ratings (Ta = 25°C)
Cha

4.2. 2sc3400.pdf Size:87K _sanyo

4.3. 2sc3402.pdf Size:88K _sanyo

4.4. 2sc3404.pdf Size:150K _mitsubishi

4.5. 2sc3403.pdf Size:75K _no

4.6. 2sc3409.pdf Size:145K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC3409
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maxi

4.7. 2sc3409.pdf Size:186K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC3409
DESCRIPTION
·Low Collector Saturation Voltage
·100% avalanche tested
·Good Linearity of h
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

BLM3401A Datasheet (PDF)

1.1. blm3401a.pdf Size:190K _update-mosfet

Pb Free Product
BLM3401A
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
D
The BLM3401A uses advanced trench technology to provide
excellent R , low gate charge and operation with gate
DS(ON)
G
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
S
Schematic diagram
GENERAL FEATURES
● V = -30V,I = -4.4A
DS D
R 1.2. blm3401a.pdf Size:190K _belling

3.1. blm3401.pdf Size:189K _update-mosfet

Pb Free Product
BLM3401
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
D
The BLM3401 uses advanced trench technology to provide
excellent R , low gate charge and operation with gate
DS(ON)
G
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
S
Schematic diagram
GENERAL FEATURES
● V = -30V,I = -4.2A
DS D
R 3.2. blm3401.pdf Size:189K _belling

BLM3401 Datasheet (PDF)

1.1. blm3401a.pdf Size:190K _update-mosfet

1.3. blm3401a.pdf Size:190K _belling

AO3451 Datasheet (PDF)

1.1. ao3451.pdf Size:314K _aosemi

AO3451
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
• Low RDS(ON)
• RoHS and Halogen-Free Compliant ID (at VGS=-10V) -4.0A
RDS(ON) (at VGS=-10V) 5.1. ao3453.pdf Size:313K _aosemi

AO3453
30V P-Channel MOSFET
General Description Product Summary
VDS
• Low RDS(ON) -30V
• RoHS and Halogen-Free Compliant ID (at VGS=-10V) -2.6A
RDS(ON) (at VGS=-10V) 5.2. ao3454.pdf Size:262K _aosemi

AO3454
30V N-Channel MOSFET
General Description Features
• Low RDS(ON) VDS = 30V
• RoHS and Halogen-Free Compliant ID = 5.8A (VGS = 10V)
RDS(ON)

5.3. ao3456.pdf Size:366K _aosemi

AO3456
30V N-Channel MOSFET
General Description Product Summary
VDS
30V
• Low RDS(ON)
• RoHS and Halogen-Free Compliant ID (at VGS=10V) 3.6A
RDS(ON) (at VGS=10V) 5.4. ao3459.pdf Size:369K _aosemi

AO3459
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
• Low RDS(ON)
• RoHS and Halogen-Free Compliant ID (at VGS=-10V) -2.6A
RDS(ON) (at VGS=-10V)

5.5. ao3457.pdf Size:310K _aosemi

AO3457
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
• Low RDS(ON)
• RoHS and Halogen-Free Compliant ID (at VGS=-10V) -4.3A
RDS(ON) (at VGS=-10V) 5.6. ao3452.pdf Size:327K _aosemi

AO3452
30V N-Channel MOSFET
General Description Product Summary
VDS
30V
• Low RDS(ON)
• RoHS and Halogen-Free Compliant ID (at VGS=10V) 4A
RDS(ON) (at VGS=10V)

GM3401 Datasheet (PDF)

1.1. gm3401.pdf Size:371K _update-mosfet

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
GM3401
SOT-23 場效應晶體管(SOT-23 Field Effect Transistors)
P-Channel Enhancement-Mode MOS FETs
P-Channel Enhancement-Mode MOS FETs
P-Channel Enhancement-Mode MOS FET

1.2. gm3401.pdf Size:371K _gsme

5.1. gm3402.pdf Size:180K _update-mosfet

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
GM3402
SOT-23 場效應晶體管(SOT-23 Field Effect Transistors)
N-Channel Enhancement-Mode MOS FETs
N-Channel Enhancement-Mode MOS FETs
N-Channel Enhancement-Mode MOS FET

5.2. gm3402.pdf Size:180K _gsme

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
GM3402
SOT-23 場效應晶體管(SOT-23 Field Effect Transistors)
N-Channel Enhancement-Mode MOS FETs
N-Channel Enhancement-Mode MOS FETs
N-Channel Enhancement-Mode MOS FET

2SC3402 Datasheet (PDF)

1.1. 2sc3402.pdf Size:88K _sanyo

4.1. 2sc3405.pdf Size:209K _toshiba

4.2. 2sc3400.pdf Size:87K _sanyo

4.3. 2sc3401.pdf Size:87K _sanyo

4.4. 2sc3404.pdf Size:150K _mitsubishi

4.5. 2sc3403.pdf Size:75K _no

4.6. 2sc3409.pdf Size:145K _jmnic

4.7. 2sc3409.pdf Size:186K _inchange_semiconductor

GSM3401S Datasheet (PDF)

1.1. gsm3401s.pdf Size:1426K _update-mosfet

GSM3401S
GSM3401S
30V P-Channel Enhancement Mode MOSFET
Product Description Features
GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65mΩ@VGS=-10V
MOSFET, uses Advanced Trench Technology
-30V/-3.2A RDS(ON)=80mΩ@VGS=-4.5V
to provide excellent RDS(ON), low gate charge.
-30V/-1.0A RDS(ON)=105mΩ@VGS=-2.5V
Super high density cell design for extremely
These devi

1.2. gsm3401s.pdf Size:1426K _globaltech_semi

3.1. gsm3401as.pdf Size:612K _update-mosfet

30V P-Channel Enhancement Mode MOSFET
Product Description Features
GSM3401AS, P-Channel enhancement mode  -30V/-2.4 RDS(ON)=70mΩ@VGS=-10.0V
MOSFET, uses Advanced Trench Technology to  -30V/-1.8 RDS(ON)=80mΩ@VGS=-4.5V
provide excellent RDS(ON), low gate charge.  -30V/-1.2 RDS(ON)=105mΩ@VGS=-2.5V
These devices are particularly suited for low  Super high density cell de

3.2. gsm3401as.pdf Size:612K _globaltech_semi