K3918

Содержание:

2SK3659 Datasheet (PDF)
2SK3385 Datasheet (PDF)
2SK2769-01MR Datasheet (PDF)
2SK3469-01MR Datasheet (PDF)
2SK2876-01MR Datasheet (PDF)
NEC => Renesas Technology K3918 Даташит, K3918 PDF, даташитов
2SK3919 Datasheet (PDF)

2SK3659 Datasheet (PDF)

1.1. 2sk3659.pdf Size:204K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

4.1. 2sk3652.pdf Size:42K _update

SMD Type IC
SMD Type Transistors
N-channel Enhancement Mode MOSFET
2SK3652
TO-263
Unit: mm
+0.2
4.57-0.2
1.27+0.1
-0.1
Features
Low on-resistance, low Qg
High avalanche resistance
For high-speed switching
0.1max
1.27+0.1
-0.1
+0.1
0.81-0.1
2.54
1Gate
2.54+0.2 +0.2
-0.2 +0.1
5.08-0.1 0.4-0.2
2Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit

4.2. 2sk365.pdf Size:679K _toshiba

2SK365
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current
Unit: mm
and Impedance Converter Applications
• High breakdown voltage: VGDS = -50 V
• High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V)
• Low RDS (ON): RDS (ON) = 80 ? (typ.) (IDSS = 5 mA)
• Small package
Absolute Maximum Ratings

4.3. 2sk3658 061117.pdf Size:391K _toshiba

2SK3658
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV)
2SK3658
DC-DC Converter, Relay Drive and Motor Drive
Unit: mm
Applications
Low drain-source ON resistance : RDS (ON) = 0.23 ? (typ.)
High forward transfer admittance : |Yfs| = 2.0 S (typ.)
Low leakage current : IDSS = 100 ?A (max) (VDS = 60 V)
Enhancement-mode : Vth = 0.8 to 2.0 V (VDS =

4.4. 2sk3656.pdf Size:157K _toshiba

2SK3656
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3656
VHF- and UHF-band Amplifier Applications
Unit: mm
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this

4.5. 2sk3653.pdf Size:43K _nec

DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3653
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The 2SK3653 is suitable for converter of ECM.
+0.1
0.3 ±0.05 0.13 –0.05
FEATURES
• Compact package
G 0~0.05
• High forward transfer admittance
1000 µS TYP. (IDSS = 100 µA)
D S
1600 µS TYP. (IDSS =

4.6. 2sk3650-01l-s-sj.pdf Size:254K _fuji

2SK3650-01L,S,SJ
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
P4
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unl

4.7. 2sk3651-01r.pdf Size:114K _fuji

2SK3651-01R

FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings (mm)
Features
TO-3PF
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unle

2SK3385 Datasheet (PDF)

1am smd транзистор даташит

1.1. 2sk3385-z.pdf Size:228K _update

4.1. 2sk3386-z.pdf Size:234K _update

4.2. 2sk3389.pdf Size:188K _toshiba

2SK3389
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3389
Switching Regulator and DC-DC Converter Applications
Unit: mm
Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 3.8 m? (typ.)
• High forward transfer admittance: |Yfs| = 70 S (typ.)
• Low leakage current: IDSS = 100 ?A (VDS = 30 V)
• Enhancement mode: Vth = 2.0 to 4

4.3. 2sk3388.pdf Size:188K _toshiba

2SK3388
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)
2SK3388
Switching Regulator and DC-DC Converter Applications
Unit: mm
Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 82 m? (typ.)
• High forward transfer admittance: |Yfs| = 20 S (typ.)
• Low leakage current: IDSS = 100 ?A (VDS = 250 V)
• Enhancement mode: Vth = 1.5 to 3.

4.4. 2sk3387.pdf Size:168K _toshiba

2SK3387
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-?-MOSV)
2SK3387
Switching Regulator, DC-DC Converter and Motor Drive
Unit: mm
Applications
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 0.08 ?(typ.)
• High forward transfer admittance: ?Yfs? = 17 S (typ.)
• Low leakage current: IDSS = 100 ?A (VDS = 150 V)
• Enhancement mode: Vth

2SK2769-01MR Datasheet (PDF)

P60nf06

1.1. 2sk2769-01mr.pdf Size:133K _fuji

FUJI POWER MOSFET
2SK2769-01MR
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
FAP-2S Series
TO-220F15
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
2.54
Applications
Switching regulators
3. Source
UPS (Uninterruptible Power Supply)
JEDEC
DC-DC converters
SC-67
EIAJ
Maximum ratings and characteristicAbsolute maximum

4.1. 2sk2766-01r.pdf Size:449K _fuji

4.2. 2sk2765-01.pdf Size:77K _fuji

FUJI POWER MOSFET
2SK2765-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
FAP-2S Series
TO-3P
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
3. Source
UPS (Uninterruptible Power Supply)
JEDEC
DC-DC converters
EIAJ SC-65
Maximum ratings and characteristicAbsolute maximum ratings
Equi

4.3. 2sk2764-01r.pdf Size:61K _fuji

FUJI POWER MOSFET
2SK2764-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
FAP-2S Series
5.5±0.3
±0.3
±0.2
15.5
ø3.2
3.2+0.3
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
±0.3
2.1±0.3 1.6
Avalanche-proof
+0.2
1.1—0.1
±0.2
3.5
±0.2 +0.2
±0.2
5.45 5.45 0.6
Applications
Switching regulators
1. Gate
2. Drain
UPS

4.4. 2sk2760-01.pdf Size:291K _fuji

N-channel MOS-FET
2SK2760-01
FAP-IIS Series 600V 1,2Ω 9A 60W
> Features > Outline Drawing
— High Speed Switching
— Low On-Resistance
— No Secondary Breakdown
— Low Driving Power
— High Voltage
— VGS = ± 30V Guarantee
— Repetitive Avalanche Rated
> Applications
— Switching Regulators
— UPS
— DC-DC converters
— General Purpose Power Amplifier
> Maximum Ratings and Characteristi

4.5. 2sk2761-01mr.pdf Size:86K _fuji

FUJI POWER MOSFET
2SK2761-01MR
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
FAP-2S Series
TO-220F15
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
2.54
Applications
Switching regulators
3. Source
UPS (Uninterruptible Power Supply)
JEDEC
DC-DC converters
SC-67
EIAJ
Maximum ratings and characteristicAbsolute maximum

4.6. 2sk2767-01.pdf Size:28K _fuji

N-channel MOS-FET
2SK2767-01
FAP-IIS Series 900V 5,5Ω 3,5A 80W
> Features > Outline Drawing
— High Speed Switching
— Low On-Resistance
— No Secondary Breakdown
— Low Driving Power
— High Voltage
— VGS = ± 30V Guarantee
— Repetitive Avalanche Rated
> Applications
— Switching Regulators
— UPS
— DC-DC converters
— General Purpose Power Amplifier
> Maximum Ratings and Characteris

4.7. 2sk2765-01.pdf Size:266K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK2765-01
·FEATURES
·With TO-3PN packaging
·High speed switching
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-

2SK3469-01MR Datasheet (PDF)

F3nk80z

1.1. 2sk3469-01mr.pdf Size:108K _fuji

2SK3469-01MR
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings
Features
TO-220F
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unle

4.1. 2sk3468-01.pdf Size:104K _update

2SK3468-01
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings
TO-220AB
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unles

4.2. 2sk3466.pdf Size:187K _toshiba

2SK3466
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)
2SK3466
Chopper Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35 ? (typ.)
• High forward transfer admittance: ?Yfs? = 4.0 S (typ.)
• Low leakage current: IDSS = 100 ?A (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Ma

4.3. 2sk3462.pdf Size:183K _toshiba

2SK3462
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSV)
2SK3462
Switching Regulator, DC/DC Converter and
Unit: mm
Motor Drive Applications
• 4 V gate drive
• Low drain-source ON-resistance: RDS (ON) = 1.2 ? (typ.)
• High forward transfer admittance: |Yfs| = 2.2 S (typ.)
• Low leakage current: IDSS = 100 ?A (VDS = 250 V)
• Enhancement mode: Vth =

4.4. 2sk3467.pdf Size:229K _renesas

4.5. 2sk3468-01.pdf Size:104K _fuji

2SK2876-01MR Datasheet (PDF)

1.1. 2sk2876-01mr.pdf Size:245K _fuji

N-channel MOS-FET
2SK2876-01MR
FAP-IIS Series 500V 1,5Ω ±6A 30W
> Features > Outline Drawing
— High Speed Switching
— Low On-Resistance
— No Secondary Breakdown
— Low Driving Power
— High Voltage
— VGS = ± 30V Guarantee
— Repetitive Avalanche Rated
> Applications
— Switching Regulators
— UPS
— DC-DC converters
— General Purpose Power Amplifier
> Maximum Ratings and Character

4.1. 2sk2879-01.pdf Size:248K _fuji

N-channel MOS-FET
2SK2879-01
FAP-IIS Series 500V 0,38Ω ±20A 150W
> Features > Outline Drawing
— High Speed Switching
— Low On-Resistance
— No Secondary Breakdown
— Low Driving Power
— High Voltage
— VGS = ± 30V Guarantee
— Repetitive Avalanche Rated
> Applications
— Switching Regulators
— UPS
— DC-DC converters
— General Purpose Power Amplifier
> Maximum Ratings and Characte

4.2. 2sk2872.pdf Size:236K _fuji

N-channel MOS-FET
2SK2872-01MR
FAP-IIS Series 450V 1,2Ω ±8A 30W
> Features > Outline Drawing
— High Speed Switching
— Low On-Resistance
— No Secondary Breakdown
— Low Driving Power
— High Voltage
— VGS = ± 30V Guarantee
— Repetitive Avalanche Rated
> Applications
— Switching Regulators
— UPS
— DC-DC converters
— General Purpose Power Amplifier
> Maximum Ratings and Character

NEC => Renesas Technology K3918 Даташит, K3918 PDF, даташитов

Номер в каталоге
Описание (Функция)
PDF
производитель

2SK1492
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET

Renesas Electronics

2SJ440
P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba

2SJ334
P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba

2SJ312
P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba

2SK2604
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba

2SJ305
P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba

2SJ304
P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba

2SK2985
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba

2SK2724
SWITCHING N-CHANNEL POWER MOS FET

Renesas Electronics

2SK3919 Datasheet (PDF)

1.1. 2sk3919.pdf Size:97K _tysemi

SMD Type
SMD Type
SMD Type
SMD Type
SMD Type IC
SMD Type IC
Product specification
2SK3919
TO-252
Unit: mm
+0.1
6.50+0.15 2.30-0.1
-0.15
+0.8
5.30+0.2 0.50-0.7
-0.2
Features
Low on-state resistance
RDS(on)1 =5.6 m MAX. (VGS =10 V, ID =32 A)
0.127
Low Ciss: Ciss = 2050 pF TYP. 0.80+0.1 max
-0.1
5 V drive available
2.3 0.60+0.1 1Gate
-0.1
+0.15
4.60-0.15
2Drain
3Source

4.1. 2sk3911.pdf Size:193K _toshiba

2SK3911
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI)
2SK3911
Switching Regulator Applications
Unit: mm
• Small gate charge: Qg = 60 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 0.22? (typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS = 500 ?A (VDS = 600 V)
• Enhancement model: Vth = 2.0~

4.2. 2sk3918.pdf Size:160K _nec

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3918
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION ORDERING INFORMATION
The 2SK3918 is N-channel MOS FET device that
PART NUMBER PACKAGE
features a low on-state resistance and excellent switching
2SK3918 TO-251 (MP-3)
characteristics, and designed for low voltage high current
2SK3918-ZK TO-252 (MP-3ZK)
applications such as DC/DC co

4.3. 2sk3914-01.pdf Size:205K _fuji

2SK3914-01
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings
Features
TO-220AB
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless

4.4. 2sk3915-01mr.pdf Size:207K _fuji

2SK3915-01MR
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings
Features
TO-220F
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unles

4.5. 2sk3917-01mr.pdf Size:121K _fuji

2SK3917-01MR
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings
Features
TO-220F
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unles

4.6. 2sk3913-01mr.pdf Size:190K _fuji

2SK3913-01MR
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Features
Outline Drawings
High speed switching Low on-resistance
TO-220F
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unles

4.7. 2sk3916-01.pdf Size:206K _fuji

2SK3916-01
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings
Features
TO-220AB
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless