K3569

2SK3570 Datasheet (PDF)

1.1. 2sk3570.pdf Size:45K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3570
TO-263
Unit: mm
Features
+0.2
4.57-0.2
+0.1
1.27-0.1
4.5V drive available.
Low on-state resistance,
RDS(on)1 =12 m MAX. (VGS =10V, ID =24A)
+0.1
0.1max
1.27-0.1
Low gate charge
QG = 23 nC TYP. (VDD =16V, VGS =10V, ID =48A)
+0.1
0.81-0.1
Built-in gate protection diode
2.54
1Gate
+0.2
2.54-0.2 +0.1 +0.2
Surface mount dev

4.1. 2sk3573.pdf Size:43K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3573
TO-263
Unit: mm
Features
+0.2
4.57-0.2
+0.1
1.27-0.1
4.5V drive available.
Low on-state resistance,
RDS(on)1 =4.0m MAX. (VGS =10V, ID = 42A)
+0.1
0.1max
1.27-0.1
Low gate charge
QG = 68nC TYP. (VDD =16 V, VGS =10 V, ID =83A)
+0.1
0.81-0.1
Built-in gate protection diode
2.54
1Gate
+0.2
2.54-0.2 +0.1 +0.2
Surface mount d

4.2. 2sk3575-s-z-zk.pdf Size:213K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

 4.3. 2sk3577.pdf Size:197K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

4.4. 2sk3576.pdf Size:193K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

 4.5. 2sk3574.pdf Size:43K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3574
TO-263
Unit: mm
Features
+0.2
4.57-0.2
+0.1
1.27-0.1
4.5V drive available.
Low on-state resistance,
RDS(on)1 = 13.5m MAX. (VGS =10V, ID = 24A)
+0.1
0.1max
1.27-0.1
Low gate charge
QG = 22nC TYP. (VDD =24 V, VGS =10 V, ID =48A)
+0.1
0.81-0.1
Built-in gate protection diode
2.54
1Gate
+0.2
2.54-0.2 +0.1 +0.2
Surface mount

4.6. 2sk3573-s-z-zk.pdf Size:74K _update

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3573
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3573 is N-channel MOS FET device that features a
PART NUMBER PACKAGE
low on-state resistance and excellent switching characteristics,
2SK3573 TO-220AB
designed for low voltage high current applications such as
2SK3573-S TO-262
DC/DC converter with synchronous

4.7. 2sk3572.pdf Size:45K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3572
TO-263
Unit: mm
+0.2
4.57-0.2
+0.1
Features 1.27-0.1
4.5V drive available.
Low on-state resistance,
RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A)
+0.1
0.1max
1.27-0.1
Low gate charge
+0.1
0.81-0.1
QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A)
2.54
1Gate
Built-in gate protection diode +0.2
2.54-0.2 +0.1 +0.2
5.08-0.1 0.4-0.2

4.8. 2sk3571.pdf Size:44K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3571
TO-263
Unit: mm
+0.2
4.57-0.2
+0.1
1.27-0.1
Features
4.5V drive available.
Low on-state resistance,
RDS(on)1 =9m MAX. (VGS =10 V, ID =24A) +0.1
0.1max
1.27-0.1
Low gate charge
+0.1
0.81-0.1
QG = 21 nC TYP. (VDD =16V, VGS =10V, ID =48A)
2.54
1Gate
+0.2
Built-in gate protection diode
2.54-0.2 +0.1 +0.2
5.08-0.1 0.4-0.2
2

4.9. 2sk357.pdf Size:352K _toshiba



2SK3572 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK3572

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 52
W

Предельно допустимое напряжение сток-исток (Uds): 20
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Максимально допустимый постоянный ток стока (Id): 80
A

Максимальная температура канала (Tj): 150
°C

Время нарастания (tr): 14
ns

Выходная емкость (Cd): 700
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0057
Ohm

Тип корпуса: TO263

2SK3572
Datasheet (PDF)

1.1. 2sk3572.pdf Size:45K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3572
TO-263
Unit: mm
+0.2
4.57-0.2
+0.1
Features 1.27-0.1
4.5V drive available.
Low on-state resistance,
RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A)
+0.1
0.1max
1.27-0.1
Low gate charge
+0.1
0.81-0.1
QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A)
2.54
1Gate
Built-in gate protection diode +0.2
2.54-0.2 +0.1 +0.2
5.08-0.1 0.4-0.2

4.1. 2sk3573.pdf Size:43K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3573
TO-263
Unit: mm
Features
+0.2
4.57-0.2
+0.1
1.27-0.1
4.5V drive available.
Low on-state resistance,
RDS(on)1 =4.0m MAX. (VGS =10V, ID = 42A)
+0.1
0.1max
1.27-0.1
Low gate charge
QG = 68nC TYP. (VDD =16 V, VGS =10 V, ID =83A)
+0.1
0.81-0.1
Built-in gate protection diode
2.54
1Gate
+0.2
2.54-0.2 +0.1 +0.2
Surface mount d

4.2. 2sk3575-s-z-zk.pdf Size:213K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

 4.3. 2sk3577.pdf Size:197K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

4.4. 2sk3570.pdf Size:45K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3570
TO-263
Unit: mm
Features
+0.2
4.57-0.2
+0.1
1.27-0.1
4.5V drive available.
Low on-state resistance,
RDS(on)1 =12 m MAX. (VGS =10V, ID =24A)
+0.1
0.1max
1.27-0.1
Low gate charge
QG = 23 nC TYP. (VDD =16V, VGS =10V, ID =48A)
+0.1
0.81-0.1
Built-in gate protection diode
2.54
1Gate
+0.2
2.54-0.2 +0.1 +0.2
Surface mount dev

 4.5. 2sk3576.pdf Size:193K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

4.6. 2sk3574.pdf Size:43K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3574
TO-263
Unit: mm
Features
+0.2
4.57-0.2
+0.1
1.27-0.1
4.5V drive available.
Low on-state resistance,
RDS(on)1 = 13.5m MAX. (VGS =10V, ID = 24A)
+0.1
0.1max
1.27-0.1
Low gate charge
QG = 22nC TYP. (VDD =24 V, VGS =10 V, ID =48A)
+0.1
0.81-0.1
Built-in gate protection diode
2.54
1Gate
+0.2
2.54-0.2 +0.1 +0.2
Surface mount

4.7. 2sk3573-s-z-zk.pdf Size:74K _update

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3573
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3573 is N-channel MOS FET device that features a
PART NUMBER PACKAGE
low on-state resistance and excellent switching characteristics,
2SK3573 TO-220AB
designed for low voltage high current applications such as
2SK3573-S TO-262
DC/DC converter with synchronous

4.8. 2sk3571.pdf Size:44K _update

SMD Type MOSFET
MOS Field Effect Transistor
2SK3571
TO-263
Unit: mm
+0.2
4.57-0.2
+0.1
1.27-0.1
Features
4.5V drive available.
Low on-state resistance,
RDS(on)1 =9m MAX. (VGS =10 V, ID =24A) +0.1
0.1max
1.27-0.1
Low gate charge
+0.1
0.81-0.1
QG = 21 nC TYP. (VDD =16V, VGS =10V, ID =48A)
2.54
1Gate
+0.2
Built-in gate protection diode
2.54-0.2 +0.1 +0.2
5.08-0.1 0.4-0.2
2

4.9. 2sk357.pdf Size:352K _toshiba



Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.

K2611 Datasheet (PDF)

1.1. k2611s.pdf Size:571K _update_mosfet

K2611S
K2611S
K2611S
K2611S
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
■ 9A,900V, R (Max1.35Ω)@V =10V
DS(on) GS
■ Ultra-low Gate charge(Typical 58nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode power

1.2. k2611.pdf Size:622K _update_mosfet

K2611
K2611
K2611
K2611
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
■ 11A,900V, R (Max1.10Ω)@V =10V
DS(on) GS
■ Ultra-low Gate charge(Typical 72nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode power fi

 1.3. k2611b.pdf Size:999K _update_mosfet

K2611B
K2611B
K2611B
K2611B
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
■ 11A,900V, R (Max1.10Ω)@V =10V
DS(on) GS
■ Ultra-low Gate charge(Typical 72nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode powe

1.4. k2611sb.pdf Size:694K _update_mosfet

K2611SB
K2611SB
K2611SB
K2611SB
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
■ 9A,900V, R (Max1.35Ω)@V =10V
DS(on) GS
■ Ultra-low Gate charge(Typical 58nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode p

 1.5. 2sk2611.pdf Size:408K _toshiba

2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII)
2SK2611
DC-DC Converter, Relay Drive and Motor Drive
Applications Unit: mm
Low drain-source ON resistance : RDS = 1.1 ? (typ.)
(ON)
High forward transfer admittance : |Y | 7.0 S (typ.)
fs =
Low leakage current : I = 100 µA (max) (V = 720 V)
DSS DS
Enhancement-mode : Vth = 2.0~4.0 V (V = 10

1.6. 2sk2611.pdf Size:219K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK2611
DESCRIPTION
·Drain Current –I =9A@ T =25℃
D C
·Drain Source Voltage-
: V = 900V(Min)
DSS
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·low on–resistance.
·High speed switching.
·No secondary breakdown.
·Suitable for switchingregulator, DC–DC control.
A

2SK2666 Datasheet (PDF)

1.1. 2sk2666.pdf Size:254K _update

SHINDENGEN
　　　 　
高速スイッチング
　N-チャネル エンハンスメント型
ＨＶＸ－ Ⅱシリーズ　パワーＭＯＳＦＥＴ
■外形寸法図　 NEDI MENSI ONS
OUTLI
2SK2666
Case : FTO-220
〔
Unit:mm〕
〔
F3F90HVXⅡ〕
900V 3A
特長
●入力容量(Ciss)が小さい。
●特にゼロバイアス時の入力容量が小さい。
●オン抵

4.1. 2sk2665.pdf Size:271K _update

SHINDENGEN
HVX-2 Series Power MOSFET N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2665
Case : STO-220
(Unit : mm)
( F3S90HVX2 )
900V 3A
FEATURES
● Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
● The static Rds(on) is small.
● The switching time is fast.
● Avalanche resistance guaranteed.
APPLICATION
● Switching power supply

4.2. 2sk2667.pdf Size:430K _update

SHINDENGEN
HVX-2 Series Power MOSFET N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2667
Case : MTO-3P
(Unit : mm)
( F3W90HVX2 )
900V 3A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
APPLICATION
●Switching power supply of AC

 4.3. 2sk2664.pdf Size:272K _update

SHINDENGEN
HVX-2 Series Power MOSFET N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2664
Case : TO-220
(Unit : mm)
( F3V90HVX2 )
900V 3A
FEATURES
● Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
● The static Rds(on) is small.
● The switching time is fast.
● Avalanche resistance guaranteed.
APPLICATION
● Switching power supply

4.4. 2sk2669.pdf Size:413K _update

SHINDENGEN
HVX-2 Series Power MOSFET N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2669
Case : TO-220
(Unit : mm)
( F5V90HVX2 )
900V 5A
FEATURES
● Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
● The static Rds(on) is small.
● The switching time is fast.
● Avalanche resistance guaranteed.
APPLICATION
● Switching power supply

 4.5. 2sk2661.pdf Size:385K _toshiba

2SK2661
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?–MOSV)
2SK2661
Chopper Regulator, DC–DC Converter and Motor Drive
Applications Unit: mm
Low drain–source ON resistance : RDS = 1.35 ? (typ.)
(ON)
High forward transfer admittance : |Y | = 4.0 S (typ.)
fs
Low leakage current : I = 100 µA (max) (V = 500 V)
DSS DS
Enhancement–mode : Vth = 2.0~

4.6. 2sk2662.pdf Size:414K _toshiba

2SK2662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)
2SK2662
DC-DC Converter, Relay Drive and Motor Drive
Applications Unit: mm
Low drain-source ON resistance : RDS = 1.35 ? (typ.)
(ON)
High forward transfer admittance : |Y | = 4.0 S (typ.)
fs
Low leakage current : I = 100 µA (max) (V = 500 V)
DSS DS
Enhancement-mode : Vth = 2.0~4.0 V (V = 10

4.7. 2sk2660.pdf Size:23K _panasonic

Power F-MOS FETs 2SK758
2SK2660(Tentative)
Silicon N-Channel Power F-MOS
Unit : mm
Features
6.5 0.1
High-speed switching
5.3 0.1
4.35 0.1
High drain-source voltage (VDSS)
3.0 0.1
Applications
High-speed switching
1.0 0.1
0.85 0.1 0.75 0.1 0.5 0.1
4.6 0.1 0.05 to 0.15
Absolute Maximum Ratings (Tc = 25?C)
1 : Gate
1 2 3
2 : Drain
Parameter Symbol Rating Unit
Marki

4.8. 3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf Size:150K _no

4.9. 2sk2663.pdf Size:336K _shindengen

SHINDENGEN
HVX-2 Series Power MOSFET N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2663
Case : E-pack
( F1E90HVX2 )
(Unit : mm)
900V 1A
FEATURES
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
Avalanche resistance guaranteed.
APPLICATION
Switching power supply of AC 240V input
Hi

2SK4145-S19-AY Datasheet (PDF)

1.1. 2sk4145-s19-ay.pdf Size:281K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

3.1. 2sk4145.pdf Size:281K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK4145
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤10mΩ
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Ideal for high-frequency switching.
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 60 V

 4.1. 2sk4144-az.pdf Size:316K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

4.2. 2sk4146-s19-ay.pdf Size:218K _update

 Preliminary Data Sheet
R07DS0130EJ0100
2SK4146
Rev.1.00
Sep 24, 2010
MOS FIELD EFFECT TRANSISTOR
Description
The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low input capacitance
⎯ Ciss = 3500 pF TYP. (VDS = 10 V)
Ordering

 4.3. 2sk4143-s17-ay.pdf Size:280K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

4.4. 2sk4147.pdf Size:258K _update

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

 4.5. 2sk414.pdf Size:238K _update-mosfet

isc N-Channel MOSFET Transistor 2SK414
DESCRIPTION
·Drain Current –I = 8A@ T =25℃
D C
·Drain Source Voltage-
: V = 160V(Min)
DSS
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High speed switching.
·High Cutoff frequency.
·No secondary breakdown.
·Suitable for switching re

4.6. 2sk414.pdf Size:238K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK414
DESCRIPTION
·Drain Current –I = 8A@ T =25℃
D C
·Drain Source Voltage-
: V = 160V(Min)
DSS
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High speed switching.
·High Cutoff frequency.
·No secondary breakdown.
·Suitable for switching re

2SK2690-01 Datasheet (PDF)

1.1. 2sk2690-01.pdf Size:226K _update

FUJI POWER MOSFET
2SK2690-01
200511
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB Series
Outline Drawings
TO-3P
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
Drain(

1.2. 2sk2690-01.pdf Size:226K _fuji

FUJI POWER MOSFET
2SK2690-01
200511
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB Series
Outline Drawings
TO-3P
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
Drain(

 4.1. 2sk2691-01r.pdf Size:281K _update

2SK2691-01R
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features
Outline Drawings
High speed switching TO-3PF
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless

4.2. 2sk2698.pdf Size:418K _toshiba

2SK2698
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)
2SK2698
DC-DC Converter, Relay Drive and Motor Drive
Unit: mm
Applications
Low drain-source ON resistance : RDS (ON) = 0.35 ? (typ.)
High forward transfer admittance : |Yfs| = 11 S (typ.)
Low leakage current : IDSS = 100 ?A (max) (VDS = 500 V)
Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V,

 4.3. 2sk2699.pdf Size:419K _toshiba

2SK2699
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)
2SK2699
Chopper Regulator, DC-DC Converter and Motor Drive
Unit: mm
Applications
Low drain-source ON resistance : RDS (ON) = 0.5 ? (typ.)
High forward transfer admittance : |Yfs| = 11 S (typ.)
Low leakage current : IDSS = 100 ?A (max) (VDS = 600 V)
Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 1

4.4. 2sk2691-01r.pdf Size:281K _fuji

2SK2691-01R
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Features
Outline Drawings
High speed switching TO-3PF
Low on-resistance
No secondary breakdown
Low driving power
High voltage
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless

2SK2461 Datasheet (PDF)

1.1. 2sk2461.pdf Size:300K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor 2SK2461
·FEATURES
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 100 V
DSS
V Gate-S

4.1. 2sk2467.pdf Size:111K _toshiba



4.2. 2sk2466.pdf Size:424K _toshiba

2SK2466
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
2SK2466
Chopper Regulator, DC-DC Converter and Motor Drive
Unit: mm
Applications
4 V gate drive
Low drain-source ON resistance : R = 34 m? (typ.)
DS (ON)
High forward transfer admittance : |Y | = 30 S (typ.)
fs
Low leakage current : IDSS = 100 µA (max) (V = 100 V)
DS
Enhancement-mode :

 4.3. 2sk246.pdf Size:242K _toshiba

2SK246
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance
Unit: mm
Converter and DC-AC High Input
Impedance Amplifier Circuit Applications
• High breakdown voltage: VGDS = -50 V
• High input impedance: I = -1 nA (max) (V = -30 V)
GSS GS
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Gate-dra

4.4. 2sk2464.pdf Size:37K _sanyo

Ordering number:ENN6475
N-Channel Silicon MOSFET
2SK2464
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON resistance.
unit:mm
Ultrahigh-speed switching.
2128
Enables simplified fabrication, high-density mound-

ing, and miniaturization in end products due to the
8.2
surface mountable package.
7.8
6.2
0.6
3
1 2
0.3
1.0 1.0
0.6
2.54 2.

 4.5. 2sk2463.pdf Size:137K _rohm

Transistors
Small switching (60V, 2A)
2SK2463
FFeatures FExternal dimensions (Units: mm)
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Low-voltage drive (4V).
5) Easily designed drive circuits.
6) Easy to parallel.
FStructure
Silicon N-channel
MOSFET
FAbsolute maximum ratings (Ta = 25_C)
FPackaging specifications
118
Transistors 2SK2463
FEl

4.6. 2sk2460n.pdf Size:138K _rohm

Transistors
Switching (250V, 5A)
2SK2460N
FFeatures FExternal dimensions (Units: mm)
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage guaranteed at
VGSS = 30V.
5) Easily designed drive circuits.
6) Easy to parallel.
FStructure
Silicon N-channel
MOSFET
FAbsolute maximum ratings (Ta = 25_C)
FPackaging specifications
114
Tran

4.7. 2sk2463 1-5.pdf Size:136K _rohm

4.8. 2sk2460n 1-5.pdf Size:133K _rohm

2SK2666 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK2666

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 30
W

Предельно допустимое напряжение сток-исток (Uds): 900
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Максимально допустимый постоянный ток стока (Id): 3
A

Максимальная температура канала (Tj): 150
°C

Время нарастания (tr): 40*
ns

Выходная емкость (Cd): 67
pf

Сопротивление сток-исток открытого транзистора (Rds): 4.7
Ohm

Тип корпуса: TO220F

2SK2666
Datasheet (PDF)

1.1. 2sk2666.pdf Size:254K _update

SHINDENGEN
　　　 　
高速スイッチング
　N-チャネル エンハンスメント型
ＨＶＸ－ Ⅱシリーズ　パワーＭＯＳＦＥＴ
■外形寸法図　 NEDI MENSI ONS
OUTLI
2SK2666
Case : FTO-220
〔
Unit:mm〕
〔
F3F90HVXⅡ〕
900V 3A
特長
●入力容量(Ciss)が小さい。
●特にゼロバイアス時の入力容量が小さい。
●オン抵

4.1. 2sk2665.pdf Size:271K _update

SHINDENGEN
HVX-2 Series Power MOSFET N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2665
Case : STO-220
(Unit : mm)
( F3S90HVX2 )
900V 3A
FEATURES
● Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
● The static Rds(on) is small.
● The switching time is fast.
● Avalanche resistance guaranteed.
APPLICATION
● Switching power supply

4.2. 2sk2667.pdf Size:430K _update

SHINDENGEN
HVX-2 Series Power MOSFET N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2667
Case : MTO-3P
(Unit : mm)
( F3W90HVX2 )
900V 3A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
APPLICATION
●Switching power supply of AC

 4.3. 2sk2664.pdf Size:272K _update

SHINDENGEN
HVX-2 Series Power MOSFET N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2664
Case : TO-220
(Unit : mm)
( F3V90HVX2 )
900V 3A
FEATURES
● Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
● The static Rds(on) is small.
● The switching time is fast.
● Avalanche resistance guaranteed.
APPLICATION
● Switching power supply

4.4. 2sk2669.pdf Size:413K _update

SHINDENGEN
HVX-2 Series Power MOSFET N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2669
Case : TO-220
(Unit : mm)
( F5V90HVX2 )
900V 5A
FEATURES
● Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
● The static Rds(on) is small.
● The switching time is fast.
● Avalanche resistance guaranteed.
APPLICATION
● Switching power supply

 4.5. 2sk2661.pdf Size:385K _toshiba

2SK2661
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?–MOSV)
2SK2661
Chopper Regulator, DC–DC Converter and Motor Drive
Applications Unit: mm
Low drain–source ON resistance : RDS = 1.35 ? (typ.)
(ON)
High forward transfer admittance : |Y | = 4.0 S (typ.)
fs
Low leakage current : I = 100 µA (max) (V = 500 V)
DSS DS
Enhancement–mode : Vth = 2.0~

4.6. 2sk2662.pdf Size:414K _toshiba

2SK2662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)
2SK2662
DC-DC Converter, Relay Drive and Motor Drive
Applications Unit: mm
Low drain-source ON resistance : RDS = 1.35 ? (typ.)
(ON)
High forward transfer admittance : |Y | = 4.0 S (typ.)
fs
Low leakage current : I = 100 µA (max) (V = 500 V)
DSS DS
Enhancement-mode : Vth = 2.0~4.0 V (V = 10

4.7. 2sk2660.pdf Size:23K _panasonic

Power F-MOS FETs 2SK758
2SK2660(Tentative)
Silicon N-Channel Power F-MOS
Unit : mm
Features
6.5 0.1
High-speed switching
5.3 0.1
4.35 0.1
High drain-source voltage (VDSS)
3.0 0.1
Applications
High-speed switching
1.0 0.1
0.85 0.1 0.75 0.1 0.5 0.1
4.6 0.1 0.05 to 0.15
Absolute Maximum Ratings (Tc = 25?C)
1 : Gate
1 2 3
2 : Drain
Parameter Symbol Rating Unit
Marki

4.8. 3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf Size:150K _no

4.9. 2sk2663.pdf Size:336K _shindengen

SHINDENGEN
HVX-2 Series Power MOSFET N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2663
Case : E-pack
( F1E90HVX2 )
(Unit : mm)
900V 1A
FEATURES
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
Avalanche resistance guaranteed.
APPLICATION
Switching power supply of AC 240V input
Hi

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, SMG2302N
, SMG2305
, SMG2305P
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, SMG2306A
, SMG2306N
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, SMG2310A
.