1am smd транзистор даташит

Биполярный транзистор AFT3904 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: AFT3904

Маркировка: 1AM

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.23
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.2
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 300
MHz

Ёмкость коллекторного перехода (Cc): 4
pf

Статический коэффициент передачи тока (hfe): 30

Корпус транзистора: SOT23

AFT3904
Datasheet (PDF)

1.1. aft3904.pdf Size:1374K _update

AFT3904
Alfa-MOS
Technology NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Pin Description ( SOT-23 )
Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFT3904T1S23RG 1AM SOT-23 Tape & Reel 3000 EA
A

1.2. aft3904.pdf Size:1374K _alfa-mos

AFT3904
Alfa-MOS
Technology NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Pin Description ( SOT-23 )
Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFT3904T1S23RG 1AM SOT-23 Tape & Reel 3000 EA
A

 4.1. aft3906.pdf Size:1278K _update

AFT3906
Alfa-MOS
Technology PNP General Purpose Amplifier
Features
•This device is designed for general purpose amplifier and switching applications at collector currents of
10µA to 100mA.
Pin Description ( SOT-23 )
Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFT3906T1S23RG 2A SOT-23 Tape & Reel 3000 EA
Absolute Maximum Ratings (TA=25 Unless

4.2. aft3906.pdf Size:1278K _alfa-mos

AFT3906
Alfa-MOS
Technology PNP General Purpose Amplifier
Features
•This device is designed for general purpose amplifier and switching applications at collector currents of
10µA to 100mA.
Pin Description ( SOT-23 )
Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFT3906T1S23RG 2A SOT-23 Tape & Reel 3000 EA
Absolute Maximum Ratings (TA=25 Unless

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

HY1607P MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: HY1607P

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 160
W

Предельно допустимое напряжение сток-исток (Uds): 68
V

Предельно допустимое напряжение затвор-исток (Ugs): 25
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 70
A

Максимальная температура канала (Tj): 175
°C

Время нарастания (tr): 13
ns

Выходная емкость (Cd): 190
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.007
Ohm

Тип корпуса: TO-220

HY1607P
Datasheet (PDF)

1.1. hy1607p.pdf Size:947K _upd-mosfet

HY1607P
N-Channel Enhancement Mode MOSFET
Features Pin Description
68V/70A
RDS(ON)= 6.5mΩ (typ.) @ VGS=10V
100% avalanche tested
G
D
Reliable and Rugged
S
Lead Free and Green Devices Available
D
(RoHS Compliant)
Applications
G
Switching application
•
• Power Management for Inverter Systems.
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
P : T

1.2. hy1607p.pdf Size:947K _hymexa

HY1607P
N-Channel Enhancement Mode MOSFET
Features Pin Description
68V/70A
RDS(ON)= 6.5mΩ (typ.) @ VGS=10V
100% avalanche tested
G
D
Reliable and Rugged
S
Lead Free and Green Devices Available
D
(RoHS Compliant)
Applications
G
Switching application
•
• Power Management for Inverter Systems.
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
P : T

 5.1. hy1606p-b.pdf Size:627K _update-mosfet

HY1606P/B
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 60V/66A
RDS(ON)= 10.4 m(typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
S
• Lead Free and Green Devices Available
D
G
(RoHS Compliant)
S
D
G
TO-220FB-3L TO-263-2L
Applications
Switching application

 Power Management for Inverter Systems.
N-Channel MOSFET
Ordering and

5.2. hy1606p-b.pdf Size:627K _hymexa

HY1606P/B
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 60V/66A
RDS(ON)= 10.4 m(typ.) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
S
• Lead Free and Green Devices Available
D
G
(RoHS Compliant)
S
D
G
TO-220FB-3L TO-263-2L
Applications
Switching application

 Power Management for Inverter Systems.
N-Channel MOSFET
Ordering and

Другие MOSFET… SID40N03
, SID9435
, SID9575
, SID9971
, SJV01N60
, SMG1330N
, SMG2301
, SMG2301P
, IRF540N
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, SMG2306N
, SMG2306NE
, SMG2310A
.

SSM3J05FU Datasheet (PDF)

1.1. ssm3j05fu 071101.pdf Size:290K _toshiba

SSM3J05FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J05FU
Power Management Switch
High Speed Switching Applications
Unit: mm
• Small package
• Low on resistance : Ron = 3.3 ? (max) (@VGS = -4 V)
: Ron = 4.0 ? (max) (@VGS = -2.5 V)
• Low gate threshold voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source v

4.1. ssm3j02f 071101.pdf Size:319K _toshiba

SSM3J02F
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02F
Power Management Switch
Unit: mm
High Speed Switching Applications
• Small package
• Low on resistance : Ron = 0.5 ? (max) (@VGS = -4 V)
: Ron = 0.7 ? (max) (@VGS = -2.5 V)
• Low gate threshold voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source vol

4.2. ssm3j02t 071101.pdf Size:184K _toshiba

SSM3J02T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02T
Power Management Switch
Unit: mm
High Speed Switching Applications
• Component package suitable for high-density mounting
• Small Package
• Low ON Resistance : Ron = 0.5 ? (max) (@VGS = -4 V)
: Ron = 0.7 ? (max) (@VGS = -2.5 V)
• Low-voltage operation possible
Absolute Maximum Ratings (Ta

 4.3. ssm3j09fu 071101.pdf Size:165K _toshiba

SSM3J09FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J09FU
Management Switch
Unit: mm
High Speed Switching Applications
• Small package
• Low on resistance: Ron = 2.7 ? (max) (@VGS = -10 V)
: Ron = 4.2 ? (max) (@VGS = -4 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage VDS -30 V
Gate-Source voltage VGS

4.4. ssm3j01t 071101.pdf Size:207K _toshiba

SSM3J01T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J01T
Power Management Switch
Unit: mm
High Speed Switching Applications
• Small Package
• Low on Resistance: Ron = 0.4 ? (max) (@VGS = -4 V)
: Ron = 0.6 ? (max) (@VGS = -2.5 V)
• Low Gate Threshold Voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-Source volt

 4.5. ssm3j01f 071101.pdf Size:312K _toshiba

SSM3J01F
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J01F
High Speed Switching Applications
Unit: mm
• Small package
• Low on resistance : Ron = 0.4 ? (max) (VGS = -4 V)
: Ron = 0.6 ? (max) (VGS = -2.5 V)
• Low gate threshold voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDS -30 V
Gate-source

SSM3J35CT Datasheet (PDF)

1.1. ssm3j35ct 080314.pdf Size:200K _toshiba

SSM3J35CT
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J35CT
0 High-Speed Switching Applications
Unit: mm
0 Analog Switch Applications
0.6±0.05
0.5±0.03
• 1.2-V drive
• Low ON-resistance : Ron = 44 ? (max) (@VGS = -1.2 V)
: Ron = 22 ? (max) (@VGS = -1.5 V)
3
: Ron = 11 ? (max) (@VGS = -2.5 V)
: Ron = 8 ? (max) (@VGS = -4.0 V)
1 2
0.35±0.02 0.0

3.1. ssm3j35fs 090625.pdf Size:183K _toshiba

SSM3J35FS
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J35FS
0 High-Speed Switching Applications
Unit: mm
0 Analog Switch Applications
• 1.2V drive
• Low ON-resistance : Ron = 44 ? (max) (@VGS = -1.2 V)
: Ron = 22 ? (max) (@VGS = -1.5 V)
: Ron = 11 ? (max) (@VGS = -2.5 V)
: Ron = 8 ? (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25?C)
Charact

3.2. ssm3j35mfv 090625.pdf Size:179K _toshiba

SSM3J35MFV
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J35MFV
0 High-Speed Switching Applications
Unit: mm
0 Analog Switch Applications
1.2±0.05
• 1.2V drive
0.8±0.05
• Low ON-resistance : Ron = 44 ? (max) (@VGS = -1.2 V)
: Ron = 22 ? (max) (@VGS = -1.5 V)
1
: Ron = 11 ? (max) (@VGS = -2.5 V)
: Ron = 8 ? (max) (@VGS = -4.0 V)
2
3
Absolute Maxim

AO3407 Datasheet (PDF)

1.1. ao3407g.pdf Size:276K _update

AO3407G P-CHANNEL MOSFET/P 沟道 MOS 晶体管
用途： 适用于作负载开关或脉宽调制应用。
Purpose:This device is suitable for use as a load switch or in PWM applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -30 V
DS
I (T =25℃) -4.1 A
D a
I (T =70℃) -3.5 A
D a
I -20 A
DM
V ±20 V
GS
P (

1.2. ao3407.pdf Size:1986K _htsemi

AO3407
30V P-Channel Enhancement Mode MOSFET
V = -30V
DS
R , V
Ω
DS(ON) gs@-10V, I 4.1A

 1.3. ao3407.pdf Size:447K _aosemi

AO3407
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
The AO3407 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is
ID (at VGS=10V) -4.1A
suitable for use as a load switch or in PWM applications.
RDS(ON) (at VGS=10V) 1.4. ao3407a.pdf Size:484K _aosemi

AO3407A
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
The AO3407A uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
ID (at VGS=-10V) -4.3A
device is suitable for use as a load switch or in PWM
RDS(ON) (at VGS=-10V)

 1.5. ao3407.pdf Size:1542K _kexin

SMD Type IC
SMD Type MOSFET
P-Channel Enhancement MOSFET
AO3407 (KO3407)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
Features
3
VDS (V) = -30V
ID = -4.1 A
1 2
RDS(ON) 52m (VGS = -10V)
D
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
RDS(ON) 87m (VGS = -4.5V) 1.9 -0.1
1.Base
1. Gate
2.Emitter
2. Source
G
3. Drain
3.collector
S
Absolute Maximum Ratings Ta = 25
Parameter Sy

1.6. ao3407a.pdf Size:2287K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3407A (KO3407A)
SOT-23
Unit: mm
2.9+0.1
-0.1
+0.1
0.4-0.1
3
■ Features
● VDS (V) =-30V
● ID =-4.3 A (VGS =-10V)
1 2
+0.1
+0.05
0.95 -0.1
● RDS(ON) ＜ 48mΩ (VGS =-10V) 0.1 -0.01
+0.1
1.9 -0.1
● RDS(ON) ＜ 78mΩ (VGS =-4.5V)
1. Gate
2. Source
3. Drain
D
D
G
G
S
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Sy

1.7. ao3407-3.pdf Size:1572K _kexin

SMD Type IC
SMD Type MOSFET
P-Channel Enhancement MOSFET
AO3407 (KO3407)
SOT-23-3
Unit: mm
+0.2
2.9-0.1
+0.1
0.4 -0.1
3
Features
VDS (V) = -30V
ID = -4.1 A
1 2
+0.02
+0.1
0.15 -0.02
RDS(ON) 52m (VGS = -10V) 0.95 -0.1
D
1.9+0.1
-0.2
RDS(ON) 87m (VGS = -4.5V)
1. Gate
2. Source
G
3. Drain
S
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Drain-Sourc

1.8. ao3407a-3.pdf Size:2288K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3407A (KO3407A)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● VDS (V) =-30V
● ID =-4.3 A (VGS =-10V)
1 2
● RDS(ON) ＜ 48mΩ (VGS =-10V)
+0.02
+0.1
0.15 -0.02
0.95-0.1
+0.1
1.9-0.2
● RDS(ON) ＜ 78mΩ (VGS =-4.5V)
1. Gate
2. Source
3. Drain
D
D
G
G
S
S
■ Absolute Maximum Ratings Ta = 25℃
Paramete

1.9. ao3407hf.pdf Size:1559K _kexin

SMD Type IC
SMD Type MOSFET
P-Channel Enhancement MOSFET
AO3407 HF (KO3407 HF)
SOT-23-3
Unit: mm
+0.2
2.9-0.1
+0.1
0.4 -0.1
3
Features
VDS (V) = -30V
ID = -4.1 A
1 2
+0.02
+0.1
0.15 -0.02
RDS(ON) 52m (VGS = -10V) 0.95 -0.1
D
1.9+0.1
-0.2
RDS(ON) 87m (VGS = -4.5V)
1. Gate
2. Source
G
3. Drain
S
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Drain-