E13007 транзистор характеристики аналог

Содержание:

KSH13007 Datasheet (PDF)
3DD13007_B8 Datasheet (PDF)
STD13007 Datasheet (PDF)
MJE13007D Datasheet (PDF)
Биполярный транзистор 13007DL — описание производителя. Основные параметры. Даташиты.
13007DL Datasheet (PDF)
KSH13007W Datasheet (PDF)
STD13007F Datasheet (PDF)
SBP13007D Datasheet (PDF)
KSH13007A Datasheet (PDF)
E13007-2 Datasheet – 8A, Vcbo=700V, NPN Transistor

KSH13007 Datasheet (PDF)

1.1. ksh13007.pdf Size:229K _upd

KSH13007
KSH13007
◎ SEMIHOW REV.A1,Oct 2007
KSH130
007
KSH13007
Switch Mode series NPN silicon Power Transistor
Switch Mode series NPN silicon Power Transistor
— High voltage, high speed power switching
— Suitable for switching regulator, inverters motor controls
8 Amperes
NPN Silicon Power Transistor
Absolute Maximum Ratings TC=25℃ unless otherwise noted
80 Watts
TO-220
CH

1.2. ksh13007a.pdf Size:229K _upd

KSH13007A
KSH13007A
◎ SEMIHOW REV.A1,Oct 2007
KSH130
007A
KSH13007A
Switch Mode series NPN silicon Power Transistor
Switch Mode series NPN silicon Power Transistor
— High voltage, high speed power switching
— Suitable for switching regulator, inverters motor controls
8 Amperes
NPN Silicon Power Transistor
Absolute Maximum Ratings TC=25℃ unless otherwise noted
80 Watts
TO-220

1.3. ksh13007af.pdf Size:226K _upd

KSH13007AF
KSH13007AF
◎ SEMIHOW REV.A1,Oct 2007
KSH130
007AF
KSH13007AF
Switch Mode series NPN silicon Power Transistor
Switch Mode series NPN silicon Power Transistor
— High voltage, high speed power switching
— Suitable for switching regulator, inverters motor controls
8 Amperes
NPN Silicon Power Transistor
Absolute Maximum Ratings TC=25℃ unless otherwise noted
80 Watts
TO

1.4. ksh13007f.pdf Size:226K _upd

KSH13007F
KSH13007F
◎ SEMIHOW REV.A1,Oct 2007
KSH130
007F
KSH13007F
Switch Mode series NPN silicon Power Transistor
Switch Mode series NPN silicon Power Transistor
— High voltage, high speed power switching
— Suitable for switching regulator, inverters motor controls
8 Amperes
NPN Silicon Power Transistor
Absolute Maximum Ratings TC=25℃ unless otherwise noted
80 Watts
TO-220

1.5. ksh13007w.pdf Size:146K _shantou-huashan

N P N S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
KSH13007W
█ HIGH VOLTAGE SWITCH MODE APPLICATION
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-263（D2PAK）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation（Tc=25℃）

3DD13007_B8 Datasheet (PDF)

1am smd транзистор даташит

1.1. 3dd13007 b8d.pdf Size:154K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DD13007 B8D
产品概述特征参数
产品特点
3DD13007 B8D 是硅 ● 开关损耗低符号额定值单位
● 反向漏电流小
NPN 型功率开关晶体管，该 VCEO 400 V
● 高温特性好
IC 7 A
产品采用平面工艺，
分压环
● 合适的开关速度
Ptot
（TC=25℃） 80 W
终端结构和少

1.2. 3dd13007 h8d.pdf Size:155K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DD13007 H8D
产品概述特征参数
产品特点
● 开关损耗低
3DD13007 H8D 是硅符号额定值单位
● 反向漏电流小
NPN 型功率开关晶体管，该 VCEO 400 V
● 高温特性好
IC 9 A
产品采用平面工艺，
分压环
● 合适的开关速度
Ptot W
（TC=25℃） 90
终端结构和

1.3. 3dd13007 b8.pdf Size:155K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DD13007 B8
产品概述特征参数
产品特点
● 开关损耗低
3DD13007 B8 是硅 NPN 符号额定值单位
● 反向漏电流小
型功率开关晶体管， VCEO 400 V
该产品
● 高温特性好
IC 8 A
采用平面工艺，
分压环终端
● 合适的开关速度
Ptot W
（TC=25℃） 80
结构和

1.4. 3dd13007 z7.pdf Size:151K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DD13007 Z7
产品概述特征参数
产品特点
3DD13007 Z7 是硅 NPN ● 开关损耗低符号额定值单位
● 反向漏电流小
VCEO 200 V
型功率开关晶体管，
该产品
● 高温特性好
IC 8 A
采用平面工艺，
分压环终端
● 合适的开关速度
Ptot （TC=25℃） 50 W
结构和少

1.5. 3dd13007 x1.pdf Size:153K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DD13007 X1
产品概述特征参数
产品特点
● 开关损耗低
3DD13007 X1 是硅NPN
符号额定值单位
● 反向漏电流小
型功率开关晶体管， VCEO 400 V
该产品
● 高温特性好
IC 8 A
采用平面工艺，
分压环终端
● 反向击穿电压高
Ptot W
（TC=25℃） 80
结构和

1.6. 3dd13007 y8.pdf Size:153K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DD13007 Y8
产品概述特征参数
产品特点
● 开关损耗低
3DD13007 Y8 是硅NPN
符号额定值单位
● 反向漏电流小
型功率开关晶体管， VCEO 340 V
该产品
● 高温特性好
IC 7 A
采用平面工艺，
分压环终端
● 反向击穿电压高
Ptot W
（TC=25℃） 80
结构和

1.7. 3dd13007 z8.pdf Size:154K _crhj

硅三重扩散 NPN 双极型晶体管
R
○
3DD13007 Z8
产品概述特征参数
产品特点
3DD13007 Z8 是硅 NPN ● 开关损耗低符号额定值单位
● 反向漏电流小
VCEO 200 V
型功率开关晶体管，
该产品
● 高温特性好
IC 8 A
采用平面工艺，
分压环终端
● 合适的开关速度
Ptot （TC=25℃） 75 W
结构和少

STD13007 Datasheet (PDF)

Rjh60f5

1.1. std13007.pdf Size:293K _auk

STD13007
NPN Silicon Power Transistor
SWITCHING REGULATOR APPLICATIONS
Features PIN Connection
• High speed switching
C
• High Collector Voltage : VCBO = 700V
• Suitable for Switching Regulator and Motor Control
B
Ordering Information
Type NO. Marking Package Code
B C E
E
STD13007 STD13007 TO-220AB
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratin

1.2. std13007p.pdf Size:264K _auk

STD13007P
NPN Silicon Power Transistor
SWITCHING REGULATOR APPLICATIONS
Features PIN Connection
• High speed switching
C
• High Collector Voltage : VCBO = 700V
• Suitable for Switching Regulator and Motor Control
B
Ordering Information
Type NO. Marking Package Code
B C E
E
STD13007P STD13007 TO-220AB
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Rat

1.3. std13007f.pdf Size:265K _auk

STD13007F
NPN Silicon Power Transistor
SWITCHING REGULATOR APPLICATIONS
Features PIN Connection
• High speed switching
C
• High Collector Voltage : VCBO = 700V
• Suitable for Switching Regulator and Motor Control
B
Ordering Information
Type NO. Marking Package Code
B C E
E
STD13007F STD13007 TO-220F-3L
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol R

1.4. std13007fc.pdf Size:265K _auk

STD13007FC
NPN Silicon Power Transistor
SWITCHING REGULATOR APPLICATIONS
Features
PIN Connection
• High speed switching
• High Collector Voltage : VCBO = 700V
C
• Suitable for Switching Regulator and Motor Control
B
Ordering Information
Type NO. Marking Package Code
B C E
STD13007FC STD13007 TO-220F-3SL
E
Absolute maximum ratings (Tc=25℃)
Characteristic Sym

MJE13007D Datasheet (PDF)

K3918

1.1. mje13007dv7.pdf Size:240K _update

MJE13007DV7 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于高频电子照明电路、开关及开关电源。
Purpose: High frequency electronic lighting, switching power supply applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号数值单位
Symbol Rating Unit
V 700 V
CBO
V
V 400
CEO
V 9.0 V
EBO
I 7 A
C
I 16 A
CP
I 4.0

1.2. mje13007d.pdf Size:368K _utc

UNISONIC TECHNOLOGIES CO., LTD
MJE13007D NPN SILICON TRANSISTOR
NPN BIPOLAR POWER
TRANSISTOR FOR SWITCHING
POWER SUPPLY
APPLICATIONS
DESCRIPTION
The UTC MJE13007D is designed for high-voltage,
high-speed power switching inductive circuits where fall time is
critical. It is particularly suited for 115 and 220 V switch mode
applications.
FEATURES
* VCEO(SUS) 400V
* 700V

1.3. mje13007dv7.pdf Size:240K _foshan

Биполярный транзистор 13007DL — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 13007DL

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 80
W

Макcимально допустимое напряжение коллектор-база (Ucb): 400
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V

Макcимальный постоянный ток коллектора (Ic): 12
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 4
MHz

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора: TO220

13007DL
Datasheet (PDF)

1.1. 13007dl.pdf Size:115K _jdsemi

R
13007DL
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Mainly used for 110V power Fluorescent Lamp、
Electronic Ballast，etc
2．
2．
2．

4.1. mje13007dv7.pdf Size:240K _update

4.2. st13007dfp.pdf Size:160K _update

ST13007DFP

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
IMPROVED SPECIFICATION:
— LOWER LEAKAGE CURRENT
— TIGHTER GAIN RANGE
— DC CURRENT GAIN PRESELECTION
— TIGHTER STORAGE TIME RANGE
HIGH VOLTAGE CAPABILITY
INTEGRATED FREE-WHEELING DIODE
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
3
2
RELIABLE OPERATION
1
VERY HIGH SWITCHING SPEED
FULLY CHARA

4.3. sbp13007d.pdf Size:315K _update

SBP13007D
SBP13007D
SBP13007D
SBP13007D
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
Features
Features
Features
Features
◆ Very High Switching Speed
◆ Minimum Lot-to-Lot h Variation
FE
◆ Wide Reverse Bias SOA
◆ Built-in fr

4.4. st13007d.pdf Size:213K _st

ST13007D

4.5. stb13007dt4.pdf Size:235K _st

STB13007DT4
High voltage fast-switching NPN power transistor
General features
Improved specification: Lower leakage current,
Tighter gain range, DC current gain
preselection, Tighter storage time range
High voltage capability
Integrated free-wheeling diode
3
Low spread of dynamic parameters 1
Minimum lot-to-lot spread for reliable operation
D2PAK
Very high switching speed

4.6. mje13007d.pdf Size:368K _utc

4.7. cdl13007ddl.pdf Size:218K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTOR
CDL13007D
TO-220
Plastic Package
Built in Diode
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage VCBO 700 V
VCEO
Collector Emitter Voltage 400 V
VEBO
Emitter Base Voltage 9 V
IC
Collector Current Continuous 7 A
Collector Power Diss

4.8. mje13007dv7.pdf Size:240K _foshan

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

KSH13007W Datasheet (PDF)

1.1. ksh13007w.pdf Size:146K _shantou-huashan

2.1. ksh13007.pdf Size:229K _upd

2.2. ksh13007a.pdf Size:229K _upd

2.3. ksh13007af.pdf Size:226K _upd

2.4. ksh13007f.pdf Size:226K _upd

STD13007F Datasheet (PDF)

1.1. std13007f.pdf Size:265K _auk

1.2. std13007fc.pdf Size:265K _auk

2.1. std13007.pdf Size:293K _auk

2.2. std13007p.pdf Size:264K _auk

SBP13007D Datasheet (PDF)

1.1. sbp13007d.pdf Size:315K _update

2.1. sbp13007x.pdf Size:290K _update

SBP13007-X
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
Features
Features
Features
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
B
B
B
B
C
C
C
C
General Description
General Descr

2.2. sbp13007o.pdf Size:335K _update

SBP13007-O
SBP13007-O
SBP13007-O
SBP13007-O
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
Features
Features
Features
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
B
B
B
B
C
C
C
C

2.3. sbp13007k.pdf Size:435K _update

SBP13007-K
SBP13007-K
SBP13007-K
SBP13007-K
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
Features
Features
Features
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
B
B
B
B
C
C
C
C

2.4. sbp13007s.pdf Size:377K _update

SBP13007-S
SBP13007-S
SBP13007-S
SBP13007-S
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
High Voltage Fast-Switching NPN Power Transistor
Features
Features
Features
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
General Description
G

KSH13007A Datasheet (PDF)

1.1. ksh13007a.pdf Size:229K _upd

1.2. ksh13007af.pdf Size:226K _upd

2.1. ksh13007.pdf Size:229K _upd

2.2. ksh13007f.pdf Size:226K _upd

2.3. ksh13007w.pdf Size:146K _shantou-huashan

E13007-2 Datasheet – 8A, Vcbo=700V, NPN Transistor

Part Number : E13007-2

Function : NPN Silicon Transistor

Manufacturers : Fairchild, ON Semiconductor, San Pu Semiconductor

Absolute Maximum Ratings at Ta = 25°C

1. Collector-Base Voltage : Vcbo = 700 V 2. Collector-Emitter Voltage : Vceo = 400 V 3. Emitter- Base Voltage : Vebo = 9 V 4. Collector Current (DC) : Ic = 8 A 5. Collector Current (Pulse) : Icp = 16 A 6. Base Current : Ib = 4 A 7. Collector Dissipation (TC=25°C) : Pc = 80 W