C3198 транзистор характеристики и его российские аналоги

2SC319 Datasheet (PDF)

1.1. 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf Size:495K _update_bjt



1.2. 2sc3193 2sc3194 2sc3195 2sc3203 2sc3205 2sc3206 2sc3207 2sc3208 2sc3226 2sc3228 2sc3229 2sc3230 2sc3231 2sc3878s 2sc3879s 2sc3880s.pdf Size:495K _update_bjt



 1.3. 2sc3199.pdf Size:55K _no

1.4. 2sc3199.pdf Size:541K _secos

2SC3199
0.15 A , 50 V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES TO-92S
? High Current Capability
? High DC Current Gain
Millimeter
REF.
Min. Max.
? Small Package
A 3.90 4.10
B 3.05 3.25
C 1.42 1.62
D 15.1 15.5
E 2.97 3.27
APPLICATIONS
F 0.66 0.86
G 2.44 2.64
? Audi

 1.5. 2sc3198l.pdf Size:54K _kec



Биполярный транзистор KTC3198L — описание производителя. Основные параметры. Даташиты.

Наименование производителя: KTC3198L

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.625
W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимальный постоянный ток коллектора (Ic): 0.15
A

Предельная температура PN-перехода (Tj): 175
°C

Статический коэффициент передачи тока (hfe): 70

KTC3198L
Datasheet (PDF)

1.1. ktc3198l.pdf Size:29K _kec

SEMICONDUCTOR KTC3198L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
B C
FEATURES
Excellent hFE Linearity
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
N DIM MILLIMETERS
Low Noise : NF=0.2dB(Typ.). f=(1kHz).
A 4.70 MAX
E
K
B 4.80 MAX
Complementary to KTA1266L. (O,Y,GR class) G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.2

3.1. ktc3198.pdf Size:244K _secos

KTC3198
0.15A , 60V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
TO-92
V(BR)CBO=60V
CLASSIFICATION OF hFE (1)
Product-Rank KTC3198-O KTC3198-Y KTC3198-GR
Range 70~140 120~240 200~400
1Emitter
Collector
2Base
3
3Collector
Millimeter Millimeter
2
REF. REF.
Min

3.2. ktc3198a.pdf Size:66K _kec

SEMICONDUCTOR KTC3198A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
·Excellent hFE Linearity
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
N DIM MILLIMETERS
A 4.70 MAX
·Low Noise : NF=1dB(Typ.). at f=1kHz. E
K
B 4.80 MAX
G
·Complementary to KTA1266A.
C 3.70 MAX
D
D 0.45
E

 3.3. ktc3198.pdf Size:432K _kec

SEMICONDUCTOR KTC3198
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
N DIM MILLIMETERS
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
A 4.70 MAX
E
K
B 4.80 MAX
Low Noise : NF=1dB(Typ.). at f=1kHz. G
C 3.70 MAX
D
Complementary to KTA1266.
D 0.45
E 1.00
F

3.4. ktc3198.pdf Size:1736K _kexin

DIP Type Transistors
NPN Transistors
KTC3198
Unit:mm
TO-92
4.8 ± 0.3 3.8 ± 0.3
■ Features
● Excellent hFE Linearity
● Low Noise
0.60 Max
● Complementary to KTA1266
0.45 ± 0.1 0.5
2
1 3
1.Emitter
2.Collector
1.27
2.54 3.Base
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Collector — Emitter Voltage VCEO 5

Другие транзисторы… KTC3191
, KTC3192
, KTC3193
, KTC3194
, KTC3195
, KTC3197
, KTC3198
, KTC3198A
, BC546
, KTC3199
, KTC3199L
, KTC3200
, KTC3202
, KTC3203
, KTC3204
, KTC3205
, KTC3206
.

Биполярный транзистор 2SC3112 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3112

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.4
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.15
A

Предельная температура PN-перехода (Tj): 175
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 3.5
pf

Статический коэффициент передачи тока (hfe): 600

Корпус транзистора: TO92

2SC3112
Datasheet (PDF)

1.1. 2sc3112.pdf Size:257K _toshiba

2SC3112
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
Unit: mm
• High DC current gain: hFE = 600~3600
• High breakdown voltage: V = 50 V
CEO
• High collector current: I = 150 mA (max)
C
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collect

4.1. 2sc3113.pdf Size:266K _toshiba

2SC3113
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3113
For Audio Amplifier and Switching Applications
Unit: mm
• High DC current gain: h = 600~3600
FE
• High breakdown voltage: V = 50 V
CEO
• High collector current: I = 150 mA (max)
C
• Small package
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V

4.2. 2sc3116.pdf Size:47K _sanyo

Ordering number:ENN1032B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1248/2SC3116
160V/700mA Switching Applications
Uses Package Dimensions
Color TV sound output, converters, inverters.
unit:mm
2009B
Features
[2SA1248/2SC3116]
High breakdown voltage. 8.0
2.7
4.0
Large current capacity.
Using MBIT process
3.0
1.6
0.8
0.8
0.6
0.5
1 : Emitter
1 2 3
2 : Collector

 4.3. 2sc3117.pdf Size:41K _sanyo

Ordering number:ENN1060C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1249/2SC3117
160V/1.5A Switching Applications
Uses Package Dimensions
Color TV sound output, converters, inverters. unit:mm
2009B
Features [2SA1249/2SC3117]
8.0
High breakdown voltage.
2.7
4.0
Large current capacity.
Adoption of MBIT process.
3.0
1.6
0.8
0.8
0.6
0.5
1 : Emitter
1 2 3
2 : Coll

4.4. 2sa1246 2sc3114.pdf Size:41K _sanyo

Ordering number:ENN1047C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246/2SC3114
High-VEBO, AF Amp Applications
Features Package Dimensions
High VEBO.
unit:mm
Wide ASO and highly resistant to breakdown.
2003B
[2SA1246/2SC3114]
5.0
4.0
4.0
0.45
0.5
0.44
0.45
1 2 3
1 : Emitter
2 : Collector
( ) : 2SA1246 3 : Base
1.3 1.3 SANYO : NP
Specifications
Absolute Maximum Ra

 4.5. 2sc3114.pdf Size:41K _sanyo

Ordering number:ENN1047C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246/2SC3114
High-VEBO, AF Amp Applications
Features Package Dimensions
High VEBO.
unit:mm
Wide ASO and highly resistant to breakdown.
2003B
[2SA1246/2SC3114]
5.0
4.0
4.0
0.45
0.5
0.44
0.45
1 2 3
1 : Emitter
2 : Collector
( ) : 2SA1246 3 : Base
1.3 1.3 SANYO : NP
Specifications
Absolute Maximum Ra

4.6. 2sc3110.pdf Size:47K _no

4.7. 2sc3117.pdf Size:197K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC3117
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1249
·High breakdown voltage
·Large current capacity
APPLICATIONS
·Color TV sound output;converters;
Inverters’ applications
·160V/1.5A switching applications
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
mounting base
3 Bas

4.8. 2sc3117.pdf Size:162K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3117
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1249
·High breakdown voltage
·Large current capacity
APPLICATIONS
·Color TV sound output;converters;
Inverters’ applications
·160V/1.5A switching applications
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
m

4.9. 2sc3110.pdf Size:63K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC3110
DESCRIPTION
·Low Noise
·High Gain
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in RF wide band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emit

Другие транзисторы… 2SC3104
, 2SC3105
, 2SC3106
, 2SC3107
, 2SC3108
, 2SC3109
, 2SC3110
, 2SC3111
, BC327
, 2SC3112A
, 2SC3112B
, 2SC3113
, 2SC3113A
, 2SC3113B
, 2SC3114
, 2SC3115
, 2SC3116
.

Биполярный транзистор 2SC4488 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC4488

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 1
W

Макcимально допустимое напряжение коллектор-база (Ucb): 120
V

Макcимальный постоянный ток коллектора (Ic): 1
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 160

Корпус транзистора: X73

2SC4488
Datasheet (PDF)

1.1. 2sc4488t-an.pdf Size:556K _update

Ordering number : EN3094B
2SA1708/2SC4488
Bipolar Transistor
http://onsemi.com
( ) ( ) ( ) ( )
— 100V, — 1A, Low VCE sat , PNP NPN Single NMP
Features
• Adoption of FBET, MBIT processes
• High breakdown voltage, large current capacity
• Fast switching speed
( )2SA1708
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Ba

1.2. 2sc4488s-an.pdf Size:556K _update

Ordering number : EN3094B
2SA1708/2SC4488
Bipolar Transistor
http://onsemi.com
( ) ( ) ( ) ( )
— 100V, — 1A, Low VCE sat , PNP NPN Single NMP
Features
• Adoption of FBET, MBIT processes
• High breakdown voltage, large current capacity
• Fast switching speed
( )2SA1708
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Ba

 1.3. 2sc4488.pdf Size:153K _sanyo

Ordering number:EN3094
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1708/2SC4488
High-Voltage Switching Applications
Features Package Dimensions
Adoption of FBET, MBIT processes.
unit:mm
High breakdown voltage, large current capacity.
2064
Fast switching speed.
[2SA1708/2SC4488]
E : Emitter
C : Collector
B : Base
( ) : 2SA1708
SANYO : NMP
Specifications
Absolute Maximu

1.4. 2sa1708 2sc4488.pdf Size:68K _sanyo

Ordering number : EN3094A
2SA1708 / 2SC4488
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1708 / 2SC4488
High-Voltage Switching Applications
Features
Adoption of FBET, MBIT processes.
High breakdown voltage, large current capacity.
Fast switching speed.
Specifications ( ) : 2SA1708
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Condition

Другие транзисторы… 2SC4480
, 2SC4481
, 2SC4482
, 2SC4483
, 2SC4484
, 2SC4485
, 2SC4486
, 2SC4487
, 2N4401
, 2SC4489
, 2SC449
, 2SC4490
, 2SC4491
, 2SC4492
, 2SC4493
, 2SC4494
, 2SC4495
.

2SC3112 Datasheet (PDF)

1.1. 2sc3112.pdf Size:257K _toshiba

2SC3112
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
Unit: mm
• High DC current gain: hFE = 600~3600
• High breakdown voltage: V = 50 V
CEO
• High collector current: I = 150 mA (max)
C
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collect

4.1. 2sc3113.pdf Size:266K _toshiba

2SC3113
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3113
For Audio Amplifier and Switching Applications
Unit: mm
• High DC current gain: h = 600~3600
FE
• High breakdown voltage: V = 50 V
CEO
• High collector current: I = 150 mA (max)
C
• Small package
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V

4.2. 2sc3116.pdf Size:47K _sanyo

Ordering number:ENN1032B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1248/2SC3116
160V/700mA Switching Applications
Uses Package Dimensions
Color TV sound output, converters, inverters.
unit:mm
2009B
Features
[2SA1248/2SC3116]
High breakdown voltage. 8.0
2.7
4.0
Large current capacity.
Using MBIT process
3.0
1.6
0.8
0.8
0.6
0.5
1 : Emitter
1 2 3
2 : Collector

 4.3. 2sc3117.pdf Size:41K _sanyo

Ordering number:ENN1060C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1249/2SC3117
160V/1.5A Switching Applications
Uses Package Dimensions
Color TV sound output, converters, inverters. unit:mm
2009B
Features [2SA1249/2SC3117]
8.0
High breakdown voltage.
2.7
4.0
Large current capacity.
Adoption of MBIT process.
3.0
1.6
0.8
0.8
0.6
0.5
1 : Emitter
1 2 3
2 : Coll

4.4. 2sa1246 2sc3114.pdf Size:41K _sanyo

Ordering number:ENN1047C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246/2SC3114
High-VEBO, AF Amp Applications
Features Package Dimensions
High VEBO.
unit:mm
Wide ASO and highly resistant to breakdown.
2003B
[2SA1246/2SC3114]
5.0
4.0
4.0
0.45
0.5
0.44
0.45
1 2 3
1 : Emitter
2 : Collector
( ) : 2SA1246 3 : Base
1.3 1.3 SANYO : NP
Specifications
Absolute Maximum Ra

 4.5. 2sc3114.pdf Size:41K _sanyo

Ordering number:ENN1047C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246/2SC3114
High-VEBO, AF Amp Applications
Features Package Dimensions
High VEBO.
unit:mm
Wide ASO and highly resistant to breakdown.
2003B
[2SA1246/2SC3114]
5.0
4.0
4.0
0.45
0.5
0.44
0.45
1 2 3
1 : Emitter
2 : Collector
( ) : 2SA1246 3 : Base
1.3 1.3 SANYO : NP
Specifications
Absolute Maximum Ra

4.6. 2sc3110.pdf Size:47K _no

4.7. 2sc3117.pdf Size:197K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC3117
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1249
·High breakdown voltage
·Large current capacity
APPLICATIONS
·Color TV sound output;converters;
Inverters’ applications
·160V/1.5A switching applications
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
mounting base
3 Bas

4.8. 2sc3117.pdf Size:162K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3117
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1249
·High breakdown voltage
·Large current capacity
APPLICATIONS
·Color TV sound output;converters;
Inverters’ applications
·160V/1.5A switching applications
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
m

4.9. 2sc3110.pdf Size:63K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC3110
DESCRIPTION
·Low Noise
·High Gain
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in RF wide band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emit

2SC3692 Datasheet (PDF)

1.1. 2sc3692.pdf Size:29K _jmnic

Power Transistors www.jmnic.ocm
2SC3692
Silicon NPN Transistors
Features B C E
?With TO-220Fa package
?High speed ,power switching applications
Absolute Maximum Ratings Tc=25?
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5 V
IC Collector current 7 A
PC Collector power dissipation 30 W

1.2. 2sc3692.pdf Size:205K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3692
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 6A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

 4.1. 2sc3691.pdf Size:303K _jmnic

Product Specification www.jmnic.com
Silicon NPN Power Transistors 2SC3691
DESCRIPTION ·
·With TO-220Fa package
·Large current ,high speed
·Low saturation voltage
APPLICATIONS
·Designed for high speed and power
switching applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collec

4.2. 2sc3694.pdf Size:27K _jmnic

Power Transistors www.jmnic.com
2SC3694
Silicon NPN Transistors
Features B C E
?With TO-220Fa package
?High speed ,power switching applications
Absolute Maximum Ratings Tc=25?
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5 V
IC Collector current 15 A
PC Collector power dissipation 30 W

 4.3. 2sc3693.pdf Size:28K _jmnic

Power Transistors www.jmnic.com
2SC3693
Silicon NPN Transistors
Features B C E
?With TO-220Fa package
?High speed ,power switching applications
Absolute Maximum Ratings Tc=25?
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5 V
IC Collector current 10 A
PC Collector power dissipation 30 W

4.4. 2sc3691.pdf Size:206K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3691
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 4A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

 4.5. 2sc3694.pdf Size:203K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3694
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 12A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S

4.6. 2sc3690.pdf Size:201K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3690
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 3A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

4.7. 2sc3693.pdf Size:207K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3693
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 8A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

Биполярный транзистор 2SC3692 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3692

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30
W

Макcимально допустимое напряжение коллектор-база (Ucb): 100
V

Макcимальный постоянный ток коллектора (Ic): 7
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: TO220

2SC3692
Datasheet (PDF)

1.1. 2sc3692.pdf Size:29K _jmnic

Power Transistors www.jmnic.ocm
2SC3692
Silicon NPN Transistors
Features B C E
?With TO-220Fa package
?High speed ,power switching applications
Absolute Maximum Ratings Tc=25?
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5 V
IC Collector current 7 A
PC Collector power dissipation 30 W

1.2. 2sc3692.pdf Size:205K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3692
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 6A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

 4.1. 2sc3691.pdf Size:303K _jmnic

Product Specification www.jmnic.com
Silicon NPN Power Transistors 2SC3691
DESCRIPTION ·
·With TO-220Fa package
·Large current ,high speed
·Low saturation voltage
APPLICATIONS
·Designed for high speed and power
switching applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collec

4.2. 2sc3694.pdf Size:27K _jmnic

Power Transistors www.jmnic.com
2SC3694
Silicon NPN Transistors
Features B C E
?With TO-220Fa package
?High speed ,power switching applications
Absolute Maximum Ratings Tc=25?
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5 V
IC Collector current 15 A
PC Collector power dissipation 30 W

 4.3. 2sc3693.pdf Size:28K _jmnic

Power Transistors www.jmnic.com
2SC3693
Silicon NPN Transistors
Features B C E
?With TO-220Fa package
?High speed ,power switching applications
Absolute Maximum Ratings Tc=25?
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 100 V
VCEO Collector to emitter voltage 60 V
VEBO Emitter to base voltage 5 V
IC Collector current 10 A
PC Collector power dissipation 30 W

4.4. 2sc3691.pdf Size:206K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3691
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 4A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

 4.5. 2sc3694.pdf Size:203K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3694
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 12A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S

4.6. 2sc3690.pdf Size:201K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3690
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 3A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

4.7. 2sc3693.pdf Size:207K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3693
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 8A
CE(sat) C
·Collector-Emitter Sustaining Voltage-
: V = 60V (Min)
CEO(SUS)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SY

Другие транзисторы… 2SC3685
, 2SC3686
, 2SC3687
, 2SC3688
, 2SC3689
, 2SC369
, 2SC3690
, 2SC3691
, BD139
, 2SC3693
, 2SC3694
, 2SC3695
, 2SC3696
, 2SC3697
, 2SC3698
, 2SC3699
, 2SC369G
.

2SC3623 Datasheet (PDF)

1.1. 2sc3623 2sc3623a.pdf Size:128K _nec

DATA SHEET
SILICON TRANSISTORS
2SC3623, 3623A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES PACKAGE DRAWING (UNIT: mm)
High hFE:
hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA
Low VCE(sat):
VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
High VEBO:
VEBO: 12 V (2SC3623)
VEBO: 15 V (2SC3623A)

ABSOLUTE MAXIMUM RATINGS (Ta = 25C)

Ra

1.2. 2sc3623.pdf Size:229K _nec

 4.1. 2sc3620.pdf Size:212K _toshiba



4.2. 2sc3621.pdf Size:206K _toshiba



 4.3. 2sc3622.pdf Size:300K _nec

4.4. 2sc3624 2sc3624a.pdf Size:222K _nec

 4.5. 2sc3622 2sc3622a.pdf Size:101K _nec

DATA SHEET
SILICON TRANSISTORS
2SC3622, 3622A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOWFREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES PACKAGE DRAWING (UNIT: mm)
High hFE:
hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA
Low VCE(sat):
VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
High VEBO:
VEBO: 12 V (2SC3622)
VEBO: 15 V (2SC3622A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)

Ra

4.6. 2sc3624.pdf Size:222K _nec

4.7. 2sc3628.pdf Size:146K _mitsubishi

4.8. 2sc3629.pdf Size:145K _mitsubishi

4.9. 2sc3626.pdf Size:195K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3626
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulator and high voltage switching applications
·High speed DC-DC converter applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S

4.10. 2sc3627.pdf Size:196K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3627
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 200V(Min)
(BR)CEO
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulator and high voltage switching applications
·High speed DC-DC converter applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
S

4.11. 2sc3621.pdf Size:211K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3621
DESCRIPTION
·Low Collector Saturation Voltage
·High breakdown voltage
·Complementary to 2SA1408
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV vert.deflection output application
·Color TV class B sound output application
ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.12. 2sc3624.pdf Size:1169K _kexin

SMD Type Transistors
NPN Transistors
2SC3624
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector Current Capability IC=150mA
● Collector Emitter Voltage VCEO=50V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Coll

4.13. 2sc3624a.pdf Size:1199K _kexin

SMD Type Transistors
NPN Transistors
2SC3624A
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector Current Capability IC=150mA
● Collector Emitter Voltage VCEO=50V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Col