2n2222a datasheet, equivalent, cross reference search
Содержание:
2N2219 Datasheet (PDF)
1.1. 2n2219 2n2219a 3.pdf Size:55K _philips
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2219; 2N2219A
NPN switching transistors
1997 Sep 03
Product specification
Supersedes data of 1997 May 07
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
FEATURES PINNING
High current (max. 800 mA)
PIN DESCRIPTION
Low voltage (max. 40 V).
1
1.2. 2n2222a 2n2219a.pdf Size:168K _st
2N2219A
2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur
1.3. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st
2N2218-2N2219
2N2221-2N2222
HIGH-SPEED SWITCHES
DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of col
1.4. 2n2219a 2n2222a.pdf Size:166K _st
2N2219A
2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur
1.5. 2n2218-a 2n2219-a.pdf Size:56K _central
145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824
1.6. 2n2219a(to-39).pdf Size:327K _mcc
MCC
TM
Micro Commercial Components
Micro Commercial Components 20736 Marilla Street Chatsworth 2N2219A
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
SWITCHING
Features
Features
TRANSISTOR
Collector — Base Voltage 75 V
Collector — Current 800 mA
Medium Current, Bipolar Transistor
SMALL SIGNAL
Marking: Type number
BIPOLAR
Lead Free Finish/RoHS Compliant(Note 1) («P
1.7. 2n2218 2n2219.pdf Size:58K _microsemi
TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices Qualified Level
JAN
2N2218 2N2219
JANTX
2N2218A 2N2219A
JANTXV
2N2218AL 2N2219AL
JANS
MAXIMUM RATINGS
2N2218 2N2218A; L
Ratings Symbol Unit
2N2219 2N2219A; L
Collector-Emitter Voltage 30 50 Vdc
VCEO
Collector-Base Voltage 60 75 Vdc
VCBO
TO- 39* (TO-205AD)
Emitter-Base
Биполярный транзистор 2N2219 — описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N2219
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.8
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.8
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 250
MHz
Ёмкость коллекторного перехода (Cc): 8
pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO39
2N2219
Datasheet (PDF)
1.1. 2n2219 2n2219a 3.pdf Size:55K _philips
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N2219; 2N2219A
NPN switching transistors
1997 Sep 03
Product specification
Supersedes data of 1997 May 07
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistors 2N2219; 2N2219A
FEATURES PINNING
High current (max. 800 mA)
PIN DESCRIPTION
Low voltage (max. 40 V).
1
1.2. 2n2222a 2n2219a.pdf Size:168K _st
2N2219A
2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur
1.3. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st
2N2218-2N2219
2N2221-2N2222
HIGH-SPEED SWITCHES
DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of col
1.4. 2n2219a 2n2222a.pdf Size:166K _st
2N2219A
2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
cur
1.5. 2n2218-a 2n2219-a.pdf Size:56K _central
145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824
1.6. 2n2219a(to-39).pdf Size:327K _mcc
MCC
TM
Micro Commercial Components
Micro Commercial Components 20736 Marilla Street Chatsworth 2N2219A
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
SWITCHING
Features
Features
TRANSISTOR
Collector — Base Voltage 75 V
Collector — Current 800 mA
Medium Current, Bipolar Transistor
SMALL SIGNAL
Marking: Type number
BIPOLAR
Lead Free Finish/RoHS Compliant(Note 1) («P
1.7. 2n2218 2n2219.pdf Size:58K _microsemi
TECHNICAL DATA
NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
Devices Qualified Level
JAN
2N2218 2N2219
JANTX
2N2218A 2N2219A
JANTXV
2N2218AL 2N2219AL
JANS
MAXIMUM RATINGS
2N2218 2N2218A; L
Ratings Symbol Unit
2N2219 2N2219A; L
Collector-Emitter Voltage 30 50 Vdc
VCEO
Collector-Base Voltage 60 75 Vdc
VCBO
TO- 39* (TO-205AD)
Emitter-Base
Другие транзисторы… 2N2217
, 2N2217-51
, 2N2217A
, 2N2218
, 2N2218A
, 2N2218AQF
, 2N2218AS
, 2N2218S
, BC639
, 2N2219A
, 2N2219AL
, 2N2219AQF
, 2N2219AS
, 2N2219S
, 2N222
, 2N2220
, 2N2220A
.
P2N2222AG Datasheet (PDF)
1.1. p2n2222ag.pdf Size:165K _upd
P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Devi
2.1. mtp2n2222a.pdf Size:238K _motorola
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SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc
2.2. p2n2222a.pdf Size:238K _motorola
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SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc
2.3. p2n2222a-d.pdf Size:164K _onsemi
P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Device Dis
P2N2222A Datasheet (PDF)
1.1. p2n2222ag.pdf Size:165K _upd
P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Devi
1.2. mtp2n2222a.pdf Size:238K _motorola
MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc
1.3. p2n2222a.pdf Size:238K _motorola
MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc
1.4. p2n2222a-d.pdf Size:164K _onsemi
P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Device Dis
2N2222AUB Datasheet (PDF)
1.1. 2n2222aubc.pdf Size:138K _upd
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES LEVELS
JANSM – 3K Rads (Si)
2N2221A 2N2222A
JANSD – 10K Rads (Si)
2N2221AL 2N2222AL
JANSP – 30K Rads (Si)
2N2221AUA 2N2222AUA
1.2. 2n2222aub.pdf Size:250K _optek
Product Bulletin JANTX, JANTXV, 2N2222AUB
September 1996
Surface Mount NPN General Purpose Transistor
Type JANTX, JANTXV, 2N2222AUB
Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V
Ceramic surface mount package
Collector-Emitter Voltage. . . . . . . . .
1.3. 2n2221a 2n2221al 2n2221aua 2n2221aub 2n2222a 2n2222al 2n2222aua 2n2222aub.pdf Size:377K _aeroflex
Radiation Hardened
NPN Silicon Switching Transistors
2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB
2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB
Features
• Qualified to MIL-PRF-19500/255
• Levels: Commerical
JANS
JANSM-3K Rads (Si)
JANSD-l0K Rads (Si)
JANSP-30K Rads (Si)
JANSL-50K Rads (Si)
JANSR-l00K Rads (Si)
• TO-18 (TO-206AA), Surface mount UA & UB Packages
Absolute Maximum Ra
P2N2222 Datasheet (PDF)
1.1. p2n2222ag.pdf Size:165K _upd
P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Devi
1.2. mtp2n2222a.pdf Size:238K _motorola
MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc
1.3. p2n2222a.pdf Size:238K _motorola
MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
by P2N2222A/D
Amplifier Transistors
NPN Silicon
P2N2222A
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
1
2
CollectorEmitter Voltage VCEO 40 Vdc 3
CollectorBase Voltage VCBO 75 Vdc
CASE 2904, STYLE 17
EmitterBase Voltage VEBO 6.0 Vdc
TO92 (TO226AA)
Collector Current Continuous IC 600 mAdc
1.4. p2n2222a-d.pdf Size:164K _onsemi
P2N2222A
Amplifier Transistors
NPN Silicon
Features
These are Pb—Free Devices*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS (TA =25C unless otherwise noted)
Characteristic Symbol Value Unit
2
BASE
Collector—Emitter Voltage VCEO 40 Vdc
Collector—Base Voltage VCBO 75 Vdc
3
Emitter—Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current — Continuous IC 600 mAdc
Total Device Dis
1.5. p2n2222 a.pdf Size:240K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222
P2N2222A
EBC
TO-92
Complementary Silicon Transistors For Switching And Linear Applications
DC Amplifier & Driver For Industrial Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL 2222 2222A UNIT
Collecto
2N2222ACSM Datasheet (PDF)
2.1. 2n2222ac3b.pdf Size:86K _upd
SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• Variant B to MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VEBO
Emitter – Bas
2.2. 2n2222ac1b.pdf Size:563K _upd
SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N2222AC1
• High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VE
2.3. 2n2222ac3c.pdf Size:86K _upd
SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• Variant B to MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VEBO
Emitter – Bas
2.4. 2n2222ac1a.pdf Size:563K _upd
SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N2222AC1
• High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VE
2.5. 2n2222ac3a.pdf Size:86K _upd
SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• Variant B to MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage 75V
VCEO
Collector – Emitter Voltage 50V
VEBO
Emitter – Bas
