2sd2499 datasheet, equivalent, cross reference search

KTA1862D Datasheet (PDF)

1.1. kta1862d l.pdf Size:409K _kec

SEMICONDUCTOR KTA1862D/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE SWITCHING.
POWER SUPPLY SWITCHING FOR TELEPHONES.
A I
C
J
FEATURES
DIM MILLIMETERS
_
A 6.60 + 0.2
High Breakdown Voltage, Typically : BVCEO=-400V. _
B 6.10 +
0.2
_
C 5.0 +
0.2
_
D 1.10 + 0.2
Low Collector Saturation Voltage.
_
E 2.70 + 0.2
_
F 2.30 + 0.1
: VCE(sat)=-0.5V(Max.) at (

5.1. kta1834d l.pdf Size:408K _kec

SEMICONDUCTOR KTA1834D/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES
Low Collector Saturation Voltage.
: VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A) A
I
C
J
Large Collector Current
DIM MILLIMETERS
_
A 6.60 + 0.2
: IC=-10A(dc) IC=-15A(10ms, single pulse)
_
B 6.10 + 0.2
_
C 5.0 +
0.2
Complementary to KTC5001D/L.
_
D 1.10 + 0.2
_
E 2.70 + 0.2
_
F 2.30 + 0.1

5.2. kta1837.pdf Size:442K _kec

SEMICONDUCTOR KTA1837
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATINS.
A
C
DIM MILLIMETERS
S
FEATURES
_
A 10.0 + 0.3
_
+
B 15.0 0.3
E
High Transition Frequency : fT=70MHz(Typ.)
C _
2.70 0.3
+
D 0.76+0.09/-0.05
Complementary Pair with KTC4793.
_
E Φ3.2 0.2
+
_
F 3.0 0.3
+
_
12.0 0.3
G +
H 0.5+0.1/-0.05

 5.3. kta1807d l.pdf Size:404K _kec

SEMICONDUCTOR KTA1807D/L
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
HIGH VOLTAGE SWITCHING.
POWER SUPPLY SWITCHING FOR TELEPHONES.
A
I
FEATURES
C
J
High Voltage : VCEO=-600V.
DIM MILLIMETERS
_
High Speed Switching Time. A 6.60 + 0.2
_
B 6.10 + 0.2
: tf 1.0 s (IC=-0.5A)
_
C 5.0 + 0.2
_
D 1.10 + 0.2
Low Collector Emitter Saturation Voltage.
_
E 2.70 + 0.2
_
F 2.30 +

Биполярный транзистор BUL6823 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BUL6823

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 13
W

Макcимально допустимое напряжение коллектор-база (Ucb): 600
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V

Макcимальный постоянный ток коллектора (Ic): 1.2
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: TO92, TO92S

BUL6823
Datasheet (PDF)

1.1. bul6823a.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6823A
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6823A

1.2. bul6823.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6823
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6823
N

 4.1. bul6825.pdf Size:84K _jmnic

Product Specification www.jmnic.com
Silicon Power Transistors BUL6825
DESCRIPTION ·
·High voltage ,high speed
·With TO-220C package
APPLICATIONS
·Relay drivers
·Inverters
·Switching regulators
·Deflection circuits
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 emitter
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Colle

4.2. bul6825.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor BUL6825
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: V = 400V(Min.)
CEO(SUS)
·Low Collector Saturation Voltage
: V = 0.5V(Max) @ I = 1A
CE(sat) C
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in relay drivers ,inverters ,s

 4.3. bul6821.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6821
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6821
N

4.4. bul6822a.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6822A
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6822A

 4.5. bul6822.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6822
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6822
N

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SD2578 Datasheet (PDF)

1.1. 2sd2578.pdf Size:45K _sanyo

Ordering number:5794
NPN Triple Diffused Planar Silicon Transistor
2SD2578
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed.
unit:mm
High breakdown voltage (VCBO=1500V).
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
On-chip damper diode.
3.1
2.8
2.0 2.0
1.0
0.6
1 2 3

1.2. 2sd2578.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2578
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT

 4.1. 2sd2571.pdf Size:101K _toshiba

2SD2571
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2571
High Power Switching Applications
Unit: mm
Hammer Drive, Pulse Motor Drive Applications
• High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A)
CE C
• Low saturation voltage: V = 1.5 V (max) (I = 1 A)
CE (sat) C
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating

4.2. 2sd2579.pdf Size:43K _sanyo

Ordering number:5795
NPN Triple Diffused Planar Silicon Transistor
2SD2579
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed.
unit:mm
High breakdown voltage (VCBO=1500V).
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
3.1
2.8
2.0 2.0
1.0
0.6
1 2 3
1:Base
2:Collector
3:Emi

 4.3. 2sd2575.pdf Size:34K _panasonic

Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
5.0 0.2 4.0 0.2
Features
Low collector to emitter saturation voltage VCE(sat).
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 15 V
0.45 0.1 0.45 0.1
Collector to emitter voltage VCEO 10 V
1.27 1.27
Emitter to base voltage

4.4. 2sd2573.pdf Size:85K _panasonic

Power Transistors
2SD2573
Silicon NPN triple diffusion planar type
For high current amplification, power amplification
Unit: mm
7.50.2 4.50.2
Features
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
0.650.1 0.850.1
0.8 C 0.8 C
1.00.1
Absolute Maximum Ratings Ta = 25C
0.70.1
0.70.1
Parameter Symbol Rating Unit 1.150.2
1.150.

 4.5. 2sd2575 e.pdf Size:38K _panasonic

Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
5.0 0.2 4.0 0.2
Features
Low collector to emitter saturation voltage VCE(sat).
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 15 V
0.45 0.1 0.45 0.1
Collector to emitter voltage VCEO 10 V
1.27 1.27
Emitter to base voltage

4.6. 2sd2579.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2579
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage

Биполярный транзистор 2SD2579 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD2579

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 60
W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 8
A

Статический коэффициент передачи тока (hfe): 20

Корпус транзистора: TO3PML

2SD2579
Datasheet (PDF)

1.1. 2sd2579.pdf Size:43K _sanyo

Ordering number:5795
NPN Triple Diffused Planar Silicon Transistor
2SD2579
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed.
unit:mm
High breakdown voltage (VCBO=1500V).
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
3.1
2.8
2.0 2.0
1.0
0.6
1 2 3
1:Base
2:Collector
3:Emi

1.2. 2sd2579.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2579
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage

 4.1. 2sd2571.pdf Size:101K _toshiba

2SD2571
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2571
High Power Switching Applications
Unit: mm
Hammer Drive, Pulse Motor Drive Applications
• High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A)
CE C
• Low saturation voltage: V = 1.5 V (max) (I = 1 A)
CE (sat) C
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating

4.2. 2sd2578.pdf Size:45K _sanyo

Ordering number:5794
NPN Triple Diffused Planar Silicon Transistor
2SD2578
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed.
unit:mm
High breakdown voltage (VCBO=1500V).
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
On-chip damper diode.
3.1
2.8
2.0 2.0
1.0
0.6
1 2 3

 4.3. 2sd2575.pdf Size:34K _panasonic

Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
5.0 0.2 4.0 0.2
Features
Low collector to emitter saturation voltage VCE(sat).
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 15 V
0.45 0.1 0.45 0.1
Collector to emitter voltage VCEO 10 V
1.27 1.27
Emitter to base voltage

4.4. 2sd2573.pdf Size:85K _panasonic

Power Transistors
2SD2573
Silicon NPN triple diffusion planar type
For high current amplification, power amplification
Unit: mm
7.50.2 4.50.2
Features
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
0.650.1 0.850.1
0.8 C 0.8 C
1.00.1
Absolute Maximum Ratings Ta = 25C
0.70.1
0.70.1
Parameter Symbol Rating Unit 1.150.2
1.150.

 4.5. 2sd2575 e.pdf Size:38K _panasonic

Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
5.0 0.2 4.0 0.2
Features
Low collector to emitter saturation voltage VCE(sat).
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 15 V
0.45 0.1 0.45 0.1
Collector to emitter voltage VCEO 10 V
1.27 1.27
Emitter to base voltage

4.6. 2sd2578.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2578
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT

Другие транзисторы… 2SD2494
, 2SD2495
, 2SD2498
, 2SD2499
, 2SD2500
, 2SD2539
, 2SD2553
, 2SD2578
, , 2SD2580
, 2SD2586
, 2SD2599
, 2SD2634
, 2SD5072
, 2SD5075T
, 2SD5702
, 3CD6D
.

Биполярный транзистор 2SD2578 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD2578

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 60
W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 8
A

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора: TO3PML

2SD2578
Datasheet (PDF)

1.1. 2sd2578.pdf Size:45K _sanyo

Ordering number:5794
NPN Triple Diffused Planar Silicon Transistor
2SD2578
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed.
unit:mm
High breakdown voltage (VCBO=1500V).
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
On-chip damper diode.
3.1
2.8
2.0 2.0
1.0
0.6
1 2 3

1.2. 2sd2578.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2578
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT

 4.1. 2sd2571.pdf Size:101K _toshiba

2SD2571
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2571
High Power Switching Applications
Unit: mm
Hammer Drive, Pulse Motor Drive Applications
• High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A)
CE C
• Low saturation voltage: V = 1.5 V (max) (I = 1 A)
CE (sat) C
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating

4.2. 2sd2579.pdf Size:43K _sanyo

Ordering number:5795
NPN Triple Diffused Planar Silicon Transistor
2SD2579
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed.
unit:mm
High breakdown voltage (VCBO=1500V).
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
3.1
2.8
2.0 2.0
1.0
0.6
1 2 3
1:Base
2:Collector
3:Emi

 4.3. 2sd2575.pdf Size:34K _panasonic

Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
5.0 0.2 4.0 0.2
Features
Low collector to emitter saturation voltage VCE(sat).
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 15 V
0.45 0.1 0.45 0.1
Collector to emitter voltage VCEO 10 V
1.27 1.27
Emitter to base voltage

4.4. 2sd2573.pdf Size:85K _panasonic

Power Transistors
2SD2573
Silicon NPN triple diffusion planar type
For high current amplification, power amplification
Unit: mm
7.50.2 4.50.2
Features
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
0.650.1 0.850.1
0.8 C 0.8 C
1.00.1
Absolute Maximum Ratings Ta = 25C
0.70.1
0.70.1
Parameter Symbol Rating Unit 1.150.2
1.150.

 4.5. 2sd2575 e.pdf Size:38K _panasonic

Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
5.0 0.2 4.0 0.2
Features
Low collector to emitter saturation voltage VCE(sat).
Absolute Maximum Ratings (Ta=25?C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 15 V
0.45 0.1 0.45 0.1
Collector to emitter voltage VCEO 10 V
1.27 1.27
Emitter to base voltage

4.6. 2sd2579.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2579
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage

Другие транзисторы… 2SD2493
, 2SD2494
, 2SD2495
, 2SD2498
, 2SD2499
, 2SD2500
, 2SD2539
, 2SD2553
, BD139
, 2SD2579
, 2SD2580
, 2SD2586
, 2SD2599
, 2SD2634
, 2SD5072
, 2SD5075T
, 2SD5702
.

2SD2642 Datasheet (PDF)

1.1. 2sd2642.pdf Size:28K _sanken-ele

C
Equivalent circuit
B
Darlington 2SD2642
(70?)
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)
Symbol Ratings Symbol Conditions Ratings Unit
Unit
0.2
4.2
0.2
10.1
c0.5
VCBO 110 ICBO VCB=110

1.2. 2sd2642.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Darlington Power Transistor 2SD2642
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 110V(Min)
(BR)CEO
·High DC Current Gain-
: h = 5000( Min.) @(I = 5A, V = 4V)
FE C CE
·Low Collector Saturation Voltage-
: V = 2.5V(Max)@ (I = 5A, I = 5mA)
CE(sat) C B
·Complement to Type 2SB1687
·Minimum Lot-to-Lot variations for robust device
performance and reliable op

 4.1. 2sd2648.pdf Size:28K _sanyo

Ordering number : ENN6923
2SD2648
NPN Triple Diffused Planar Silicon Transistor
2SD2648
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7
1 2 3
1 : Base
5.45
2

4.2. 2sd2646.pdf Size:29K _sanyo

Ordering number : ENN6922
2SD2646
NPN Triple Diffused Planar Silicon Transistor
2SD2646
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7
1 2 3
1 : Base
5.45
2

 4.3. 2sd2649.pdf Size:29K _sanyo

Ordering number : ENN6679A
2SD2649
NPN Triple Diffused Planar Silicon Transistor
2SD2649
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process. 5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7
1 2 3
1 : Base
2 : Coll

4.4. 2sd2645.pdf Size:29K _sanyo

Ordering number : ENN6897A
2SD2645
NPN Triple Diffused Planar Silicon Transistor
2SD2645
Color TV Horizontal Deflection
Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
On-chip damper diode.
3.1
2.8
2.0 2.1
0.9
0

 4.5. 2sd2643.pdf Size:27K _sanken-ele

C
Equivalent circuit
B
Darlington 2SD2643
(70?)
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
Application : Audio, Series Regulator and General Purpose
(Ta=25C)
Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)
Symbol Ratings Unit Symbol Conditions Ratings Unit
0.2
0.2 5.5
15.6
0.2
3.45
VCBO 110 V VCB=

4.6. 2sd2641.pdf Size:28K _sanken-ele

Equivalent circuit
C
B
Darlington 2SD2641
(70?)
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)
Application : Audio, Series Regulator and General Purpose
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)
Ratings
Symbol Ratings Symbol Conditions Unit
Unit
0.2
4.8
0.4
15.6
100max A
VCBO 110 ICBO

4.7. 2sd2645.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2645
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT

2SD2396 Datasheet (PDF)

1.1. 2sd2396.pdf Size:41K _rohm

2SD2396
Transistors
Transistors
2SC5060
(96-819-D351)
(96-733-D416)
323

1.2. 2sd2396.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SD2396
DESCRIPTION
·Low Collector Saturation Voltage
·High DC current gain
·Large collector power dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Coll

 1.3. 2sd2396.pdf Size:577K _blue-rocket-elect

2SD2396(BR3DA2396F)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package.
特征 / Features
直流电流增益高,饱和压降低,集电极耗散功率大,,安全工作区宽。
High DC current gain),low VCE(sat),large collector power dissipation, wide SOA.
用途 / Applications
用于

2SD2689LS Datasheet (PDF)

1.1. 2sd2689ls.pdf Size:30K _sanyo

Ordering number : ENN7527
2SD2689LS
NPN Triple Diffused Planar Silicon Transistor
2SD2689LS
Color TV Horizontal Deflection
Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2079D
High reliability(Adoption of HVP process).

Adoption of MBIT process.
10.0 4.5
3.2
2.8
0.9
1.2 1.2
0.75 0.7
1 : Base
1 2 3
2 :

3.1. 2sd2689.pdf Size:208K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2689
DESCRIPTION
·High speed.
·High breakdown voltage(VCBO=1500V).
·High reliability(Adoption of HVP process).
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for Color TV Horizontal Deflection
Output Applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Co

 4.1. 2sd2686.pdf Size:175K _toshiba

2SD2686
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)
2SD2686
Solenoid Drive Applications
Unit: mm
Motor Drive Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A)
• Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-em

4.2. 2sd2688.pdf Size:39K _sanyo

Ordering number : ENN7526
2SD2688LS
NPN Triple Diffused Planar Silicon Transistor
2SD2688LS
Color TV Horizontal Deflection
Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2079D
High reliability(Adoption of HVP process).

Adoption of MBIT process.
10.0 4.5
3.2
2.8
On-chip damper diode.
0.9
1.2 1.2
0.

 4.3. 2sd2687s.pdf Size:76K _rohm

2SD2687S
Transistors
Low frequency amplifier, strobe
2SD2687S
Dimensions (Unit : mm)
Application
Low frequency amplifier
Storobo
Features
1) A collector current is large.
2) VCE(sat) ? 250mV
At lc=1.5A / lB=30mA
(1)Emitter(GND)
(2)Collector(OUT)
(3)Base(IN) Taping specifications
Absolute maximum ratings (Ta=25C)
Parameter Symbol Limits Unit
Collector-base voltag

2SD2549 Datasheet (PDF)

1.1. 2sd2549.pdf Size:42K _panasonic

Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
Features
High forward current transfer ratio hFE which has satisfactory
4.6 0.2
9.9 0.3
2.9 0.2
linearity
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with
? 3.2 0.1
one screw
1.4 0.2
Absolute Maximum Ratings (TC=

1.2. 2sd2549.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2549
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 80V(Min)
(BR)CEO
·Low Collector Saturation Voltgae-
: V = 0.7V(Max.)@ I = 3A
CE(sat) C
·Good Linearity of h
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =2

 4.1. 2sd2544.pdf Size:51K _panasonic

Power Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
5.0 0.1
Features
10.0 0.2 1.0
High foward current transfer ratio hFE
90
Satisfactory linearity of foward current transfer ratio hFE
Allowing supply with the radial taping
1.2 0.1 C1.0
2.25 0.2
Absolute Maximum Ratings (TC=25?C)
0.65 0.1

4.2. 2sd254.pdf Size:180K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SD254
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 70V(Min)
(BR) CEO
·Collector Power Dissipation-
: P = 20W @T = 25℃
C C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMU

2SD2544 Datasheet (PDF)

1.1. 2sd2544.pdf Size:51K _panasonic

Power Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
5.0 0.1
Features
10.0 0.2 1.0
High foward current transfer ratio hFE
90
Satisfactory linearity of foward current transfer ratio hFE
Allowing supply with the radial taping
1.2 0.1 C1.0
2.25 0.2
Absolute Maximum Ratings (TC=25?C)
0.65 0.1

4.1. 2sd2549.pdf Size:42K _panasonic

Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
Features
High forward current transfer ratio hFE which has satisfactory
4.6 0.2
9.9 0.3
2.9 0.2
linearity
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with
? 3.2 0.1
one screw
1.4 0.2
Absolute Maximum Ratings (TC=

4.2. 2sd254.pdf Size:180K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SD254
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 70V(Min)
(BR) CEO
·Collector Power Dissipation-
: P = 20W @T = 25℃
C C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMU

 4.3. 2sd2549.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2549
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 80V(Min)
(BR)CEO
·Low Collector Saturation Voltgae-
: V = 0.7V(Max.)@ I = 3A
CE(sat) C
·Good Linearity of h
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =2