8550s datasheet, equivalent, cross reference search

Проверка и безопасное использование

Будьте внимательными в использовании транзисторов этой серии, при покупке S8050 убедитесь, что он именно то, что Вам нужно. Очень редко, но встречаются данные транзисторы с PNP проводимостью. Так, компания Wing Shing Computer Components выпускает его с PNP проводимостью.

Придерживайтесь следующих мер безопасности:

• Не эксплуатируйте его с напряжением выше 20 В (V) и нагрузкой более 700 мА (mA);
• Используйте подходящий базовый резистор, который ограничит ток базы до требуемого уровня;
• Не подвергайте его нагреву более 150 и ниже минус 60 градусов по Цельсию;

Производители

Транзистор S8050 выпускают следующие компании:

1. Wing Shing Computer Components Co.Ltd. (WS);
2. UTC (Unisonic Technologies Company);
3. Weitron technology co.,ltd;
4. Galaxy Semi-Conductor Holdings Limited;
5. Daya Electric Group Co., Ltd;
6. SeCoS Halbleitertechnologie GmbH;
7. Shenzhen Jin Yu Semiconductor Co., Ltd;
8. SHENZHEN YONGERJIA INDUSTRY CO.,LTD.

8550SS Datasheet (PDF)

1.1. 8550ss.pdf Size:230K _upd

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
8550SS TRANSISTOR (PNP)
1.EMITTER
FEATURES
2.COLLECTOR
General Purpose Switching and Amplification.
3.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-

1.2. 8550ss-c 8550ss-d.pdf Size:366K _upd

MCC
8550SS-C
TM Micro Commercial Components
20736 Marilla Street Chatsworth
Micro Commercial Components
8550SS-D
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.
PNP Silicon
• Collector-current 1.5A
• Collector-base Voltage 40V
Transistors
• Operating and storage

 1.3. 8550sst.pdf Size:344K _secos

8550SST
-1.5A , -40V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
? General Purpose Switching and Amplification.
G H
?Emitter
?Collector
?Base
J
CLASSIFICATION OF hFE (1)
A D
Millimeter
Product-Rank 8550SST-B 8550SST-C 8550SST-D
REF.
B Min. Max.
A 4.40 4.70
Ra

Биполярный транзистор L8550 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: L8550

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 1
W

Макcимально допустимое напряжение коллектор-база (Ucb): 30
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 1.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 15
pf

Статический коэффициент передачи тока (hfe): 85

Корпус транзистора: TO92

L8550
Datasheet (PDF)

1.1. l8550hslt1g.pdf Size:83K _upd

LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
General Purpose Transistors
Series
S-L8550HPLT1G
PNP Silicon
FEATURE
Series
High current capacity in compact package.
Epitaxial planar type.
3
PNP complement: L8550H
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
1
and Control Change Requir

1.2. l8550m.pdf Size:407K _blue-rocket-elect

L8550M
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
与 L8050M 互补。
Complementary pair with L8050M.
用途 / Applications
用于功率放大电路。
Power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2

 1.3. l8550.pdf Size:603K _blue-rocket-elect

L8550(BR3CA8550K)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package.
特征 / Features
PC, IC 大,与 L8050(BR3DA8050K)互补。
High PC and IC, complementary pair with L8050(BR3DA8050K).
用途 / Applications
用于 2W 乙类推挽功放。
2W output amplifier of portable radios in cl

1.4. l8550plt1g.pdf Size:234K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8550PLT1G
Series
PNP Silicon
S-L8550PLT1G
FEATURE
Series
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
1
2
DEVICE MARKING AND ORDERING INFORMATION
SOT–

 1.5. l8550hplt1g.pdf Size:89K _lrc

LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
General Purpose Transistors
Series
PNP Silicon S-L8550HPLT1G
Series
FEATURE
High current capacity in compact package.
Epitaxial planar type.
3
PNP complement: L8550H
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site 1
and Control Change Requirem

1.6. l8550hqlt1g.pdf Size:85K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8550HPLT1G
Series
PNP Silicon
S-L8550HPLT1G
FEATURE
Series
High current capacity in compact package.
Epitaxial planar type.
PNP complement: L8550H
3
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
1
and Control Change Requir

1.7. l8550qlt1g.pdf Size:202K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8550PLT1G
Series
PNP Silicon
S-L8550PLT1G
FEATURE
Series
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
1
2
DEVICE MARKING AND ORDERING INFORMATION
SOT–

1.8. l8550hrlt1g.pdf Size:84K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8550HPLT1G
Series
PNP Silicon
S-L8550HPLT1G
FEATURE
Series
High current capacity in compact package.
Epitaxial planar type.
PNP complement: L8550H 3
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
1
and Control Change Requir

Другие транзисторы… KSA928T
, KSC2328T
, KTA1273T
, KTC2022I
, KTC3199M
, KTC3205T
, L8050
, L8050M
, 2N2222
, L8550M
, M28M
, MJE13009ZJ
, MMBR911
, MMBT5401T
, MMBT5551T
, MMBTA42T
, MMBTA44N
.

MMBT8550 Datasheet (PDF)

1.1. mmbt8550.pdf Size:332K _upd

1.2. mmbt8550lt1.pdf Size:131K _upd

RoHS
MMBT8550LT1
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
3
2W OUTPUT AMPLIFIER OF PORTABLE
1
RADIOS IN CLASS
B PUSH-PULL OPERATION
2
Complement to MMPT8050LT1
1.
1.BASE
Collector-current:Ic=-500mA
2.EMITTER
High Total Power Dissipation:Pc=225mW
2.4
3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Voltage

 5.1. mmbt8099lt1g.pdf Size:154K _upd

MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
http://onsemi.com
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc 2
EMITTER
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 500 mAdc
3
THERMAL

5.2. mmbt8050.pdf Size:325K _upd

 5.3. mmbt8050lt1.pdf Size:150K _upd

RoHS
MMBT8050LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
3
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
1
B PUSH-PULL OPERATION
2
1.
Complement to MMPT8550LT1
1.BASE
Collector Current:Ic=500mA
2.EMITTER
o
2.4
Collector Dissipation:Pc=225mW(Tc=25 C) 3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Volta

5.4. mmbt8050d.pdf Size:351K _upd

MMBT8050D
o
TRANSISTOR (NPN)
FEATURES
SOT-23
Complimentary to S8550
Collector Current: IC=0.5A
1．BASE
2．EMITTER
3．COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Dissipat

 5.5. mmbt8099lt1.pdf Size:158K _onsemi

MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
http://onsemi.com
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc 2
EMITTER
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 500 mAdc
3
THERMAL CHAR

5.6. mmbt8050d.pdf Size:351K _bytesonic

MMBT8050D
o
TRANSISTOR (NPN)
FEATURES
SOT-23
Complimentary to S8550
Collector Current: IC=0.5A
1．BASE
2．EMITTER
3．COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Dissipat

MPS8550 Datasheet (PDF)

1.1. mps8550sc.pdf Size:603K _update

SEMICONDUCTOR MPS8550SC
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE
·Complementary to MPS8050SC.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
VCBO -40 V
Collector-Base Voltage
VCEO -25 V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -1,200 mA
PC *
Collector Power Dissipation 350 mW
Tj
Junctio

1.2. mps8550s.pdf Size:390K _kec

SEMICONDUCTOR MPS8550S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE
E
L B L
Complementary to MPS8050S.
DIM MILLIMETERS
_
A 2.93 0.20
+
B 1.30+0.20/-0.15
C 1.30 MAX
2
3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
1
MAXIMUM RATING (Ta=25 ) G 1.90
H 0.95
J 0.13+0.10/-0.05
CHARACTERISTIC SYMBOL RATING UNIT
K 0.00 ~ 0.10
L 0.55
VCBO -40 V
Collecto

 1.3. mps8550.pdf Size:45K _kec

SEMICONDUCTOR MPS8550
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
B C
FEATURE
·Complementary to MPS8050.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
G
MAXIMUM RATING (Ta=25℃)
C 3.70 MAX
D
D 0.45
CHARACTERISTIC SYMBOL RATING UNIT
E 1.00
F 1.27
VCBO -40 V
Collector-Base Voltage
G 0.85
H 0.45
VCEO -25 V
Collector-Emitter Voltage _
H
J 14.0

SS8550W Datasheet (PDF)

1.1. mmss8550w-j.pdf Size:187K _upd

MMSS8550W-L
MCC
Micro Commercial Components MMSS8550W-H
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
MMSS8550W-J
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plasti

1.2. mmss8550w-h.pdf Size:187K _upd

MMSS8550W-L
MCC
Micro Commercial Components MMSS8550W-H
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
MMSS8550W-J
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plasti

 1.3. mmss8550w-l.pdf Size:187K _upd

MMSS8550W-L
MCC
Micro Commercial Components MMSS8550W-H
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
MMSS8550W-J
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plasti

1.4. ss8550w.pdf Size:115K _secos

SS8550W
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
SOT-323
FEATURES
Collector
Dim Min Max
3
3
A 1.800 2.200
Power dissipation
1
1 B 1.150 1.350
2 Base
PCM : 0.2 W
C 0.800 1.000
Collector Current
D 0.300 0.400
2
ICM : -1.5 A A G 1.200 1.400
Emitter
L
H 0.000 0.100
Collector-base voltage
J 0.100 0.250
3
V(BR)CBO : — 40 V
S
To

 1.5. ss8550w.pdf Size:264K _wietron

SS8550W
PNP Plastic-Encapsulate Transistor
3
P b Lead(Pb)-Free
1
2
MAXIMUM RATINGS (TA=25? unless otherwise noted)
1. BASE
Symbol Parameter Value Units
2. EMITTER
3. COLLECTOR
V(BR)CBO Collector- Base Voltage -40 V
ICM Collector Current -1.5 A
SOT-323(SC-70)
.
PCM Power Dissipation (Tamb=25°C) W
0.2
TJ Junction Temperature -55 to +150 ?
Tstg Storage Temperature -55 to +150 ?
EL

HE8550S Datasheet (PDF)

1.1. he8550s.pdf Size:55K _hsmc

Spec. No. : HE6129
HI-SINCERITY
Issued Date : 1993.01.15
Revised Date : 2004.07.26
MICROELECTRONICS CORP.
Page No. : 1/5
HE8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE8550S is designed for general purpose amplifier applications.
Features
TO-92
• High DC Current gain: 100-500 at IC=150mA
• Complementary to HE8050S
Absolute Maximum Ratings
• Maximum Temperatures
Sto

4.1. he8550.pdf Size:156K _utc

UNISONIC TECHNOLOGIES CO., LTD
HE8550 PNP SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL PNP
TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small signal PNP
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
FEATURES
* Collector Current up to 1.5A
* Collector-Emitter Voltage up

4.2. he8550l.pdf Size:21K _utc

UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull
2W audio amplifier for portable radio and general purpose
applications.
1
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC

 4.3. he8550.pdf Size:46K _hsmc

Spec. No. : HE6114
HI-SINCERITY
Issued Date : 1992.09.30
Revised Date : 2006.07.28
MICROELECTRONICS CORP.
Page No. : 1/4
HE8550
PNP Epitaxial Planar Transistor
Description
The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull
operation. TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature……………………………..

L8550 Datasheet (PDF)

1.1. l8550hslt1g.pdf Size:83K _upd

LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
General Purpose Transistors
Series
S-L8550HPLT1G
PNP Silicon
FEATURE
Series
High current capacity in compact package.
Epitaxial planar type.
3
PNP complement: L8550H
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
1
and Control Change Requir

1.2. l8550m.pdf Size:407K _blue-rocket-elect

L8550M
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
与 L8050M 互补。
Complementary pair with L8050M.
用途 / Applications
用于功率放大电路。
Power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2

 1.3. l8550.pdf Size:603K _blue-rocket-elect

L8550(BR3CA8550K)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package.
特征 / Features
PC, IC 大,与 L8050(BR3DA8050K)互补。
High PC and IC, complementary pair with L8050(BR3DA8050K).
用途 / Applications
用于 2W 乙类推挽功放。
2W output amplifier of portable radios in cl

1.4. l8550plt1g.pdf Size:234K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8550PLT1G
Series
PNP Silicon
S-L8550PLT1G
FEATURE
Series
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
1
2
DEVICE MARKING AND ORDERING INFORMATION
SOT–

 1.5. l8550hplt1g.pdf Size:89K _lrc

LESHAN RADIO COMPANY, LTD.
L8550HPLT1G
General Purpose Transistors
Series
PNP Silicon S-L8550HPLT1G
Series
FEATURE
High current capacity in compact package.
Epitaxial planar type.
3
PNP complement: L8550H
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site 1
and Control Change Requirem

1.6. l8550hqlt1g.pdf Size:85K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8550HPLT1G
Series
PNP Silicon
S-L8550HPLT1G
FEATURE
Series
High current capacity in compact package.
Epitaxial planar type.
PNP complement: L8550H
3
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
1
and Control Change Requir

1.7. l8550qlt1g.pdf Size:202K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8550PLT1G
Series
PNP Silicon
S-L8550PLT1G
FEATURE
Series
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
1
2
DEVICE MARKING AND ORDERING INFORMATION
SOT–

1.8. l8550hrlt1g.pdf Size:84K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8550HPLT1G
Series
PNP Silicon
S-L8550HPLT1G
FEATURE
Series
High current capacity in compact package.
Epitaxial planar type.
PNP complement: L8550H 3
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
1
and Control Change Requir

SS8550-C Datasheet (PDF)

1.1. ss8550-c-d.pdf Size:196K _update

MCC
SS8550-C
TM Micro Commercial Components
20736 Marilla Street Chatsworth
Micro Commercial Components
SS8550-D
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.
PNP Silicon
• Collector-current 1.5A
• Collector-base Voltage 40V
Transistors
• Operating and storage

3.1. mmss8550-h.pdf Size:153K _upd

MCC
MMSS8550-L
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
MMSS8550-H
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plastic-Encapsulate
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
Tra

3.2. mmss8550-l.pdf Size:153K _upd

MCC
MMSS8550-L
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
Micro Commercial Components
MMSS8550-H
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP Silicon
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
• Marking:Y2 Plastic-Encapsulate
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
Tra

KST8550 Datasheet (PDF)

1.1. kst8550s.pdf Size:985K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST8550S
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector current: IC-=0.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VE

1.2. kst8550x.pdf Size:543K _kexin

SMD Type Transistors
PNP Transistors
KST8550X
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Power Dissipation: PC=0.3W
● Collector Current: IC=-1.5A
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emit

 1.3. kst8550d-50.pdf Size:1283K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST8550D-50
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
● Collector Current Capability IC=-1.2A
● Collector Emitter Voltage VCEO=-50V
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -50 V
C

1.4. kst8550m.pdf Size:985K _kexin

SMD Type
SMD Type Transistors
PNP Transistors
KST8550M
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
■ Features
● Collector Current: IC=-0.8A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-

 1.5. kst8550.pdf Size:1092K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST8550
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Collector Current: IC=-1.5A
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEB

Биполярный транзистор MMBT8550 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: MMBT8550

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.35
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.6
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT-23

MMBT8550
Datasheet (PDF)

1.1. mmbt8550.pdf Size:332K _upd

1.2. mmbt8550lt1.pdf Size:131K _upd

RoHS
MMBT8550LT1
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
3
2W OUTPUT AMPLIFIER OF PORTABLE
1
RADIOS IN CLASS
B PUSH-PULL OPERATION
2
Complement to MMPT8050LT1
1.
1.BASE
Collector-current:Ic=-500mA
2.EMITTER
High Total Power Dissipation:Pc=225mW
2.4
3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Voltage

 5.1. mmbt8099lt1g.pdf Size:154K _upd

MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
http://onsemi.com
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc 2
EMITTER
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 500 mAdc
3
THERMAL

5.2. mmbt8050.pdf Size:325K _upd

 5.3. mmbt8050lt1.pdf Size:150K _upd

RoHS
MMBT8050LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
3
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
1
B PUSH-PULL OPERATION
2
1.
Complement to MMPT8550LT1
1.BASE
Collector Current:Ic=500mA
2.EMITTER
o
2.4
Collector Dissipation:Pc=225mW(Tc=25 C) 3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Volta

5.4. mmbt8050d.pdf Size:351K _upd

MMBT8050D
o
TRANSISTOR (NPN)
FEATURES
SOT-23
Complimentary to S8550
Collector Current: IC=0.5A
1．BASE
2．EMITTER
3．COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Dissipat

 5.5. mmbt8099lt1.pdf Size:158K _onsemi

MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
http://onsemi.com
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
Rating Symbol Value Unit
BASE
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc 2
EMITTER
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 500 mAdc
3
THERMAL CHAR

5.6. mmbt8050d.pdf Size:351K _bytesonic

MMBT8050D
o
TRANSISTOR (NPN)
FEATURES
SOT-23
Complimentary to S8550
Collector Current: IC=0.5A
1．BASE
2．EMITTER
3．COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.5 A
PC Collector Dissipat

Другие транзисторы… MMBT6517LT1G
, MMBT6520LT1G
, MMBT6521LT1G
, MMBT720
, MMBT8050
, MMBT8050D
, MMBT8050LT1
, MMBT8099LT1G
, BD140
, MMBT8550LT1
, MMBT9012LT1
, MMBT9013LT1
, MMBT9014LT1
, MMBT9015LT1
, MMBT9018LT1
, MMBT918LT1G
, MMBT945-H
.

Datasheets

Datasheet

PDF, 228 Кб

Выписка из документа

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8550C Datasheet (PDF)

1.1. 8550c.pdf Size:143K _upd

SUNROC
8550C TRANSISTOR(PNP)
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
1. EMITTER
Symbol Parameter Value Units
Collector-Base Voltage 2. BASE
VCBO -40 V
Collector-Emitter Voltage -25
VCEO V
3. COLLECTOR
Emitter-Base Voltage
VEBO -5 V
Collector Current
IC -0.5 A
Collector Power Dissipation
PC 625 mW
Junction Temperature
Tj 150 ℃
Storag Temperature -55～150

1.2. s8550b s8550c s8550d.pdf Size:177K _update

S8550-B
MCC
Micro Commercial Components
TM
S8550-C
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
S8550-D
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
PNP Silicon
• Collector-current 0.5A
• Collector-base Voltage 40V
Transistors
• Operating a

LH8550QLT1G Datasheet (PDF)

1.1. lh8550qlt1g.pdf Size:138K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LH8550PLT1G
PNP Silicon
Series
FEATURE S-LH8550PLT1G
High current capacity in compact package.
Series
IC =-1.5A.
Epitaxial planar type.
PNP complement: LH8550
3
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique

1
Site and Control Change Requirements; AEC-Q101 Qualified and

4.1. lh8550plt1g.pdf Size:157K _upd

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LH8550PLT1G
PNP Silicon
Series
FEATURE S-LH8550PLT1G
High current capacity in compact package.
Series
IC =-1.5A.
Epitaxial planar type.
PNP complement: LH8550
3
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique

1
Site and Control Change Requirements; AEC-Q101 Qualified and