Datasheet nxp bc557

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Datasheets
Подробное описание
BC559C Datasheet (PDF)
Производители
Биполярный транзистор BC558A — описание производителя. Основные параметры. Даташиты.
BC558A Datasheet (PDF)

Datasheets

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Datasheet BC557B

PDF, 139 Кб, Язык: анг., Файл закачен: 7 июл 2019, Страниц: 4General Purpose Transistors

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BC557BGeneral Purpose TransistorsFeatures:• PNP Silicon Planar Epitaxial Transistors.• Especially Suited For use in Driver Stages of Audio Amplifiers, Low Noise InputStages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of TelevisionReceivers. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 FGHK 5°1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration:1. Emitter2. Base3. Collector Page 13/05/08 V1.1 BC557BGeneral Purpose TransistorsAbsolute Maximum RatingsParameters Symbol Rating Collector-Emitter Voltage VCEO 45 Collector-Emitter Voltage VCES Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 5.0 Collector Current Continuous Peak ICICM 100200 Base Current Peak IBM Emitter Current Peak IEM Power Dissipation at Ta = 25°CDerate above 25°C PTA 5004.0 Storage Temperature Tstg -65 to +150 Junction Temperature Tj 150 Rth (j-a) 250 Unit 50 V mA200mW …

Подробное описание

2n2222a datasheet, equivalent, cross reference search

Specifications:

Collector Emitter Voltage V(br)ceo: 45 V
Collector Emitter Voltage Vces: -300 mV
Continuous Collector Current Ic Max: 100 mA
Current Ic Continuous a Max: 100 mA
DC Collector Current: 100 mA
DC Current Gain Max: 800
DC Current Gain Min: 125
DC Current Gain: 2 mA
Device Marking: BC557
Gain Bandwidth ft Min: 100 MHz
Gain Bandwidth ft Typ: 100 MHz
Mounting Type: Through Hole
Number of Pins: 3
Number of Transistors: 1
Operating Temperature Range: -65°C to +150°C
Package / Case: SOT-54
Pin Configuration: d
Power Dissipation Pd: 500 mW
Power Dissipation Ptot Max: 500 mW
SVHC: No SVHC (18-Jun-2010)
Transistor Case Style: SOT-54
Transistor Polarity: PNP
Voltage Vcbo: 50 V

RoHS: Yes

BC559C Datasheet (PDF)

2sd2499 datasheet, equivalent, cross reference search

1.1. bc556abk bc557abk bc558abk bc559abk bc556bbk bc557bbk bc558bbk bc559bbk bc556cbk bc557cbk bc558cbk bc559cbk.pdf Size:80K _update

BC556xBK … BC559xBK
BC556xBK … BC559xBK
General Purpose Si-Epitaxial PlanarTransistors
PNP PNP
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2009-12-07
±0.1
Power dissipation – Verlustleistung 500 mW
4.6
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
C B E
Plastic material has UL classification 94V-0
Gehäusematerial

5.1. bc559 bc560.pdf Size:107K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BC559/D
Low Noise Transistors
PNP Silicon
BC559, B, C
BC560C
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
Rating Symbol BC559 BC560 Unit
CASE 2904, STYLE 17
CollectorEmitter Voltage VCEO 30 45 Vdc
TO92 (TO226AA)
CollectorBase Voltage VCBO 30 50 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Curren

5.2. bc559 4.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC559
PNP general purpose transistor
1999 May 28
Product specification
Supersedes data of 1997 Jun 03
Philips Semiconductors Product specification
PNP general purpose transistor BC559
FEATURES PINNING
Low current (max. 100 mA)
PIN DESCRIPTION
Low voltage (max. 30 V).
1 emitter
2 base
APPLICATIONS
3 collector
General

5.3. bc556 bc557 bc558 bc559 bc560.pdf Size:43K _fairchild_semi

BC556/557/558/559/560
Switching and Amplifier
High Voltage: BC556, VCEO= -65V
Low Noise: BC559, BC560
Complement to BC546 … BC 550
TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BC556 -80 V
: BC557/560 -50 V
: BC558/559 -30 V
VCEO Col

5.4. bc559.pdf Size:125K _onsemi

BC559
Low Noise Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC559 BC560 Unit
http://onsemi.com
Collector-Emitter Voltage VCEO -30 -45 Vdc
Collector-Base Voltage VCBO -30 -50 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current Continuous IC -100 mAdc
Total Device Dissipation @ PD mW
1
TA = 25C 625
2
3
Derate above 25C 5.0 mW/C
Total Device Dissipation @ PD Watt

5.5. bc559 bc560.pdf Size:298K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C
BC560, B, C
TO-92
Plastic Package
Low Noise Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise)
DESCRIPTION SYMBOL BC559 BC560 UNITS
VCEO
Collector Emitter Voltage 30 45 V
VCBO
Collector Base Voltage 30 50 V
VEBO
Emitter

5.6. bc559 bc560.pdf Size:28K _kec

SEMICONDUCTOR BC559/560
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW NOISE APPLICATION.
B C
FEATURE
For Complementary with NPN Type BC549/550.
N DIM MILLIMETERS
A 4.70 MAX
E
K
G B 4.80 MAX
MAXIMUM RATING (Ta=25 )
C 3.70 MAX
D
D 0.45
CHARACTERISTIC SYMBOL RATING UNIT
E 1.00
F 1.27
BC559 -30
G 0.85
VCBO
Collector-Base Voltage V
H 0.45
BC560 -50 _
H J 14.00 + 0.50
K

Производители

Даташит d1047 pdf ( datasheet )

Все DataSheet от указных производителей ВС557 можно скачать здесь. Производители: Diotec Semiconductor, SeCoS Halbleitertechnologie GmbH, Rectron Semiconductor, Unisonic Technologies, Fairchild Semiconductor, Continental Device India Limited, Olitech Electronics, Foshan Blue Rocket Electronics, First Silicon, Semtech Corporation, Boca Semiconductor Corporation, KEC(Korea Electronics), Micro Electronics, ON Semiconductor, NXP Semiconductors, Dc Components, SEMTECH ELECTRONICS, Tiger Electronic, SHENZHEN YONGERJIA INDUSTRY, Micro Commercial Components, Jiangsu Changjiang Electronics Technology, SHENZHEN KOO CHIN ELECTRONICS, Siemens Semiconductor Group, General Semiconductor.

Биполярный транзистор BC558A — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC558A

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.5
W

Макcимально допустимое напряжение коллектор-база (Ucb): 30
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 75
MHz

Ёмкость коллекторного перехода (Cc): 7
pf

Статический коэффициент передачи тока (hfe): 125

Корпус транзистора: TO226

BC558A
Datasheet (PDF)

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5.1. bc556 bc557 bc558.pdf Size:159K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BC556/D
Amplifier Transistors
BC556,B
PNP Silicon
BC557A,B,C
COLLECTOR
BC558B
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
2
BC BC BC
3
556 557 558
Rating Symbol Unit
CASE 2904, STYLE 17
CollectorEmitter Voltage VCEO 65 45 30 Vdc
TO92 (TO226AA)
CollectorBase Voltage VCBO 80 50 30 Vdc
EmitterBase Voltage VEBO

5.2. bc556 bc557 bc558 2.pdf Size:220K _motorola

5.3. bc556 bc557 bc558 bc559 bc560.pdf Size:43K _fairchild_semi

5.4. bc556b bc557a-b-c bc558b.pdf Size:81K _onsemi

BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
http://onsemi.com
Features
Pb-Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS 2
BASE
Rating Symbol Value Unit
Collector — Emitter Voltage VCEO Vdc
3
BC556 -65
EMITTER
BC557 -45
BC558 -30
Collector — Base Voltage VCBO Vdc
BC556 -80
BC557 -50
BC558 -30
TO-92
Emitter — Base Voltage VEBO -5.0 Vdc CASE 29

5.5. sbc558.pdf Size:94K _auk

SBC558
Semiconductor
Semiconductor
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• High voltage : VCEO=-30V
• Complementary pair with SBC548
Ordering Information
Type NO. Marking Package Code
SBC558 SBC558 TO-92
Outline Dimensions unit : mm
3.45±0.1
4.5±0.1
2.25±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BC556, A, B,
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC557, A, B, C
BC558, A, B, C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
E
B «T»
C
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25?C)
DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS
Collector Emitter

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SEMICONDUCTOR BC556/7/8
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
B C
FEATURES
For Complementary With NPN Type BC546/547/548.
N DIM MILLIMETERS
A 4.70 MAX
E
K
G B 4.80 MAX
C 3.70 MAX
D
D 0.45
E 1.00
MAXIMUM RATING (Ta=25 )
F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT
H 0.45
_
H J 14.00 + 0.50
BC556 -80
K 0.55 M

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BC556, A/B
BC557, A/B/C
BC558, A/B/C
PNP General Purpose Transistor
COLLECTOR
3
P b Lead(Pb)-Free
2
BASE
1
2
3
1
EMITTER
TO-92
Maximum Ratings ?
( T =25 C unless otherwise noted)
A
Rating Symbol BC556 BC557 BC558 Unit
V -65 -45
Collector-Emitter Voltage ECO -30
V
-30
V
Collector-Base Voltage CBO -80 -50 V
V
EBO
Emitter-Base Voltage -5 -5 -5 V
l 100
Collector Current Co

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