Datasheet multicomp 2n3904

AFT3904 Datasheet (PDF)

1.1. aft3904.pdf Size:1374K _update

AFT3904
Alfa-MOS
Technology NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Pin Description ( SOT-23 )
Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFT3904T1S23RG 1AM SOT-23 Tape & Reel 3000 EA
A

1.2. aft3904.pdf Size:1374K _alfa-mos

AFT3904
Alfa-MOS
Technology NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Pin Description ( SOT-23 )
Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFT3904T1S23RG 1AM SOT-23 Tape & Reel 3000 EA
A

 4.1. aft3906.pdf Size:1278K _update

AFT3906
Alfa-MOS
Technology PNP General Purpose Amplifier
Features
•This device is designed for general purpose amplifier and switching applications at collector currents of
10µA to 100mA.
Pin Description ( SOT-23 )
Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFT3906T1S23RG 2A SOT-23 Tape & Reel 3000 EA
Absolute Maximum Ratings (TA=25 Unless

4.2. aft3906.pdf Size:1278K _alfa-mos

AFT3906
Alfa-MOS
Technology PNP General Purpose Amplifier
Features
•This device is designed for general purpose amplifier and switching applications at collector currents of
10µA to 100mA.
Pin Description ( SOT-23 )
Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFT3906T1S23RG 2A SOT-23 Tape & Reel 3000 EA
Absolute Maximum Ratings (TA=25 Unless

Биполярный транзистор KMBT3904 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: KMBT3904

Маркировка: 1AM

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.2
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.2
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 250
MHz

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT23

KMBT3904
Datasheet (PDF)

1.1. kmbt3904.pdf Size:125K _update

Product specification
KMBT3904(MMBT3904)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
3
Features
Epitaxial planar die construction
12
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60 V
Collector — Emitter Voltage VCEO 40 V
Emitter — Base Voltage VEBO 6V
Coll

1.2. kmbt3904dw.pdf Size:538K _update

SMD Type Transistors
NPN Transistors
MMBT3904DW (KMBT3904DW)
■ Features
● Epitaxial planar die construction
● Ideal for low power amplification and switching
● Dual NPN Transistors
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Collector — Emitter Voltage VCEO 40 V
Emitter — Base Voltage VEBO 5
Collector Current —

 1.3. kmbt3904t.pdf Size:755K _update

SMD Type Transistors
NPN Transistors
MMBT3904T (KMBT3904T)
SOT-523 U nit: m m
+0.
1
1.6 -0.
1
+0.1
1.0 -0.1
+0.05
0.2 -0.05 0.15±0.05
■ Features
● Small Package
2 1
● Complementary to MMBT3906T
3
0.3±0.05
+0.1
0.5 -0.1
1. Base
2. Emitter
3. Collecter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Collec

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

H3904 Datasheet (PDF)

1.1. ch3904wgp.pdf Size:114K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904WGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SC-70/SOT-323
* Small surface mounting type. (SC-70/SOT-323)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
* High sat

1.2. ch3904gp.pdf Size:188K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904GP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SOT-23
FEATURE
* Small surface mounting type. (SOT-23)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
(1)
* High saturation cu

 1.3. ch3904sgp.pdf Size:155K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904SGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SC-88/SOT-363
* Small surface mounting type. (SC-88/SOT-363)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
(1) (6)
*

1.4. ch3904vgp.pdf Size:119K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904VGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SOT-563
* Small surface mounting type. (SOT-563)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
(1)
(5)
* High satur

 1.5. ch3904gp-a.pdf Size:215K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904GP-A
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SOT-23
FEATURE
* Small surface mounting type. (SOT-23)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
(1)
* High saturation

1.6. ch3904tgp.pdf Size:99K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904TGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-75/SOT-416
FEATURE
* Small surface mounting type. (SC-75/SOT-416)
* Low current (Max.=200mA).
* Suitable for high packing density.
0.1
0.2±0.05
* Low voltage (Max.=40

1.7. ch3904zgp.pdf Size:147K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904ZGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SC-73/SOT-223
* Small flat package. ( SC-73/SOT-223 )
* Low current (Max.=200mA).
1.65+0.15
* Suitable for high packing density. 6.50+0.20
0.90+0.05
2.0+0.3
3.00

1.8. h3904.pdf Size:65K _shantou-huashan

N PN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H3904
█ APPLICATIONS
Small Signal Amplifier ；High Frequency oscillator；Switching Applications.
(complement To H3906)
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ TO-92
Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯

Биполярный транзистор CH3904GP-A — описание производителя. Основные параметры. Даташиты.

Наименование производителя: CH3904GP-A

Маркировка: s1A

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.33
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.2
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 300
MHz

Ёмкость коллекторного перехода (Cc): 4
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT23

CH3904GP-A
Datasheet (PDF)

1.1. ch3904gp-a.pdf Size:215K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904GP-A
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SOT-23
FEATURE
* Small surface mounting type. (SOT-23)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
(1)
* High saturation

2.1. ch3904gp.pdf Size:188K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904GP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SOT-23
FEATURE
* Small surface mounting type. (SOT-23)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
(1)
* High saturation cu

 4.1. ch3904wgp.pdf Size:114K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904WGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SC-70/SOT-323
* Small surface mounting type. (SC-70/SOT-323)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
* High sat

4.2. ch3904sgp.pdf Size:155K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904SGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SC-88/SOT-363
* Small surface mounting type. (SC-88/SOT-363)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
(1) (6)
*

 4.3. ch3904vgp.pdf Size:119K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904VGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SOT-563
* Small surface mounting type. (SOT-563)
* Low current (Max.=200mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
(1)
(5)
* High satur

4.4. ch3904tgp.pdf Size:99K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904TGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-75/SOT-416
FEATURE
* Small surface mounting type. (SC-75/SOT-416)
* Low current (Max.=200mA).
* Suitable for high packing density.
0.1
0.2±0.05
* Low voltage (Max.=40

 4.5. ch3904zgp.pdf Size:147K _upd

CHENMKO ENTERPRISE CO.,LTD
CH3904ZGP
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SC-73/SOT-223
* Small flat package. ( SC-73/SOT-223 )
* Low current (Max.=200mA).
1.65+0.15
* Suitable for high packing density. 6.50+0.20
0.90+0.05
2.0+0.3
3.00

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

LMBT3904LT1G Datasheet (PDF)

1.1. lmbt3904lt1g.pdf Size:590K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
●FEATURES
LMBT3904LT1G
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
S-LMBT3904LT1G
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
3
Qualified and PPAP Capable.
●DEVICE MARKING AND RESISTOR VALU

2.1. lmbt3904dw1t1g.pdf Size:506K _lrc

LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
The LMBT3904DW1T1G device is a spin–off of our popular
LMBT3904DW1T1G
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
S-LMBT3904DW1T1G
six–leaded surface mount package. By putting two discrete devices
in one package , this device is ideal fo

2.2. lmbt3904n3t5g.pdf Size:548K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
●FEATURES
LMBT3904N3T5G
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
S-LMBT3904N3T5G
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
●DEVICE MARKING AND RESISTOR VAL

 2.3. lmbt3904tt1g.pdf Size:221K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
Simplifies Circuit Design.
We declare that the material of product compliance with
LMBT3904TT1G
RoHS requirements.
S-LMBT3904TT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device Marking

2.4. lmbt3904wt1g.pdf Size:616K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
●FEATURES
LMBT3904W T1G
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
S-LMBT3904W T1G
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
3
Qualified and PPAP Capable.
1
●DEVICE MARKING AND RESISTOR

Биполярный транзистор BTN3904N3 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BTN3904N3

Маркировка: 1A

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.56
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.2
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 300
MHz

Ёмкость коллекторного перехода (Cc): 4
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT-23

BTN3904N3
Datasheet (PDF)

1.1. btn3904n3.pdf Size:268K _cystek

Spec. No. : C228N3-H
Issued Date : 2002.05.11
CYStech Electronics Corp.
Revised Date : 2014.01.23
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BTN3904N3
Description
• The BTN3904N3 is designed for general purpose switching amplifier applications.
• Complementary to BTP3906N3.
• Pb-free lead plating and halogen-free package
Symbol Outline
BTN3904N3 S

3.1. btn3904a3.pdf Size:244K _cystek

Spec. No. : C228A3
Issued Date : 2003.10.30
CYStech Electronics Corp.
Revised Date : 2012.10.22
Page No. : 1/6
General Purpose NPN Epitaxial Planar Transistor
BTN3904A3
Description
• The BTN3904A3 is designed for general purpose switching amplifier applications.
• Complementary to BTP3906A3.
• Pb-free lead plating package.
Symbol Outline
BTN3904A3 TO-92
B：Base

3.2. btn3904s3.pdf Size:259K _cystek

Spec. No. : C228S3
Issued Date : 2010.01.18
CYStech Electronics Corp.
Revised Date :
Page No. : 1/6
General Purpose NPN Epitaxial Planar Transistor
BTN3904S3
Description
• The BTN3904S3 is designed for general purpose switching amplifier applications.
• Complementary to BTP3906S3.
• Pb-free package
Symbol Outline
BTN3904S3 SOT-323
B：Base
C：Collector
E：Emi

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

KMBT3904 Datasheet (PDF)

1.1. kmbt3904.pdf Size:125K _update

Product specification
KMBT3904(MMBT3904)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
3
Features
Epitaxial planar die construction
12
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60 V
Collector — Emitter Voltage VCEO 40 V
Emitter — Base Voltage VEBO 6V
Coll

1.2. kmbt3904dw.pdf Size:538K _update

SMD Type Transistors
NPN Transistors
MMBT3904DW (KMBT3904DW)
■ Features
● Epitaxial planar die construction
● Ideal for low power amplification and switching
● Dual NPN Transistors
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Collector — Emitter Voltage VCEO 40 V
Emitter — Base Voltage VEBO 5
Collector Current —

 1.3. kmbt3904t.pdf Size:755K _update

SMD Type Transistors
NPN Transistors
MMBT3904T (KMBT3904T)
SOT-523 U nit: m m
+0.
1
1.6 -0.
1
+0.1
1.0 -0.1
+0.05
0.2 -0.05 0.15±0.05
■ Features
● Small Package
2 1
● Complementary to MMBT3906T
3
0.3±0.05
+0.1
0.5 -0.1
1. Base
2. Emitter
3. Collecter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Collec

Биполярный транзистор 2N3904S — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N3904S

Маркировка: ZC

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.35
W

Макcимально допустимое напряжение коллектор-база (Ucb): 60
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.2
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 300
MHz

Ёмкость коллекторного перехода (Cc): 4
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT23

2N3904S
Datasheet (PDF)

1.1. 2n3904sc.pdf Size:699K _upd

SEMICONDUCTOR 2N3904SC
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Low Leakage Current
: ICEX=50nA(Max.), IBL=50nA(Max.)
@VCE=30V, VEB=3V.
·Excellent DC Current Gain Linearity.
·Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
·Complementary to 2N3906SC.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMB

1.2. 2n3904s.pdf Size:410K _kec

SEMICONDUCTOR 2N3904S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L B L
DIM MILLIMETERS
FEATURES
_
+
2.93 0.20
A
B 1.30+0.20/-0.15
Low Leakage Current
C 1.30 MAX
2
: ICEX=50nA(Max.), IBL=50nA(Max.) 3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
@VCE=30V, VEB=3V.
1
G 1.90
H 0.95
Excellent DC Current Gain Linearity.
J 0.13+0.1

 1.3. 2n3904s.pdf Size:227K _first_silicon

SEMICONDUCTOR
2N3904S
TECHNICAL DATA
General Purpose Transistor
• We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device Marking Shipping
3
2N3904S 1AM 3000/Tape & Reel
2
1
MAXIMUM RATINGS
SOT–23
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 40 Vdc
Collector–Base Voltage VCBO 60 Vdc
3
COLLECTOR
Emitter–Base Vo

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