Даташит bc857c pdf ( datasheet )

Содержание:

Параметры
BC857CDW Datasheet (PDF)
BC857AW Datasheet (PDF)
Datasheets
BC857CW Datasheet (PDF)
BC857S Datasheet (PDF)
BC857BL3 Datasheet (PDF)
Биполярный транзистор BC857BL3 — описание производителя. Основные параметры. Даташиты.
BC857BL3 Datasheet (PDF)
BC857BW Datasheet (PDF)
BC857C Datasheet Download — Kexin

Параметры

Parameters / Models	BC857B-7-F	BC857BFA-7B	BC857BFZ-7B	BC857BLP-7	BC857BLP-7B	BC857BLP4-7	BC857BLP4-7B	BC857BQ-7-F	BC857BS-13-F	BC857BS-7-F	BC857BT-7-F	BC857BTQ-7	BC857BV-7	BC857BW-13-F	BC857BW-7-F	BC857BWQ-13-F
Automotive Compliant PPAP	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ	AC857BQ
IC	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
ICM	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
PD	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
Product Type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Qualified to AECQ10x	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
VCE (SAT) (@ IC/IB) (A/m A)	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5	0.01/0.5
VCE (SAT) (@ IC/IB2) (A/m A) (A/m A)	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5	0.1/5
VCE (SAT) (Max.2)	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV	650 mV
VCE (SAT) Max	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV	300 mV
VCEO, VCES	45 V	45 V	45 V	45 V	45 V	45 V	45 V	45 V	45 V	45 V	45 V	45 V	45 V	45 V	45 V	45 V
fT	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
hFE	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min	220 Min
hFE (@ IC)	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A

BC857CDW Datasheet (PDF)

2n2222a datasheet, equivalent, cross reference search

1.1. bc856bdw1t1g bc857cdw1t1g.pdf Size:181K _upd

BC856BDW1T1G,
SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series,
BC858CDW1T1G Series
Preferred Devices
http://onsemi.com
Dual General Purpose
Transistors
PNP Duals
SOT-363/SC-88
CASE 419B
STYLE 1
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-363/SC-88 which is
(3) (2) (1)
designed for low power surface mount applicat

1.2. sbc857cdw1t1g.pdf Size:181K _update

1.3. lbc857cdw1t1g.pdf Size:176K _lrc

LESHAN RADIO COMPANY, LTD.
Dual General Purpose
LBC85** DW1T1G
Transistors
S-LBC85** DW1T1G
6
5
These transistors are designed for general purpose amplifier
4
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
1
We declare that the material of product compliance with RoHS requirements.
2
3
S- Prefix for Automotive an

BC857AW Datasheet (PDF)

Datasheet nxp bc847c

1.1. bc857awr.pdf Size:401K _upd

BC856W SERIES
BC857W SERIES
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
PNP SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR BC856W and
BC857W Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERminiTM surface mount package,
designed for general purpose switching and amplifier
applications.
MARKING CODE: SEE MARKING CODE

1.2. bc858aw-g bc857aw-g.pdf Size:140K _upd

Small Signal Transistor
BC856AW-G Thru. BC858CW-G (PNP)
RoHS Device
Features
-Ideally suited for automatic insertion
-For Switching and AF Amplifier Applications
SOT-323
-Power dissipation
PCM: 0.15W (@TA=25°C)
0.087 (2.20)
0.079 (2.00)
-Collector current
3
ICM: -0.1A
-Collector-base voltage
0.053(1.35)
0.045(1.15)
VCBO: BC856W= -80V
BC857W= -50V
1 2
0.006 (0.15)
BC85

1.3. bc856awt bc857awt bc858awt.pdf Size:251K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BC856AWT1/D
General Purpose Transistors
BC856AWT1,BWT1
PNP Silicon
BC857AWT1,BWT1
COLLECTOR BC858AWT1,BWT1,
These transistors are designed for general purpose amplifier
3
applications. They are housed in the SOT323/SC70 which is CWT1
designed for low power surface mount applications.
1
Motorola Preferred Devices
BASE
2

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1.5. bc856aw-bc857aw-bc858aw.pdf Size:444K _secos

BC856AW, BW
BC857AW, BW, CW
Elektronische Bauelemente
BC858AW, BW, CW
RoHS Compliant Product
FEATURES
* Ideally suited for automatic insertion
* For Switching and AF Amplifier Applications
SOT-323
O O
* Operating Temp. : -55 C ~ +150 C Dim Min Max
A
A 1.800 2.200
L
B 1.150 1.350
C OLLE C TOR 3
C 0.800 1.000
S
Top View
3 B
12 D 0.300 0.400
G 1.200 1.400
1
V G
H 0.000 0.100

1.6. bc856aw bc857aw bc858aw.pdf Size:546K _wietron

BC856AW/BW
BC857AW/BW
BC858AW/BW/CW
COLLECTOR
General Purpose Transistor
3
3
PNP Silicon
1
1
P b Lead(Pb)-Free
BASE
2
2
EMITTER
SOT-323(SC-70)
MaximumRatings (TA=25°Cunless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage BC856 -65
VCEO
BC857 -45 V
BC858 -30
Collector-Base Voltage BC856 -80
VCBO
BC857 -50 V
BC858 -30
Emitter-Base Voltage BC856 -5.0
V

1.7. lbc857awt1g.pdf Size:284K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
PNP Silicon
CWT1G
These transistors are designed for general purpose
LBC858AWT1G, BWT1G
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount CWT1G
applications.
S-LBC856AWT1G, BWT1G
Features
S-LBC857AWT1G, BWT1G
We declare that the

1.8. bc858aw-g bc857aw-g.pdf Size:140K _comchip

Datasheets

Даташит d1047 pdf ( datasheet )

Просмотр и загрузка
Datasheet BC856A, BC856B, BC857A, BC857B, BC857C, BC858A, BC858B, BC858c

PDF, 363 Кб, Язык: анг., Файл закачен: 7 июл 2019, Страниц: 7PNP

Выписка из документа

BC856A-BC858CPNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data   Ideally Suited for Automatic InsertionComplementary NPN Types: BC846 – BC848For Switching and AF Amplifier ApplicationsTotally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)Halogen and Antimony Free. «Green» Device (Note 3)Qualified to AEC-Q101 Standards for High ReliabilityPPAP Capable (Note 4) Case: SOT23Case Material: Molded Plastic, “Green” Molding CompoundUL Flammability Classification Rating 94V-0Moisture Sensitivity: Level 1 per J-STD-020Terminals: Finish – Matte Tin Plated Leads, Solderable perMIL-STD-202, Method 208Weight: 0.008 grams (Approximate)  C SOT23 B E …

BC857CW Datasheet (PDF)

1.1. bc857cwt1g bc857bwt1g.pdf Size:81K _upd

BC856B, BC857B, BC858A
General Purpose
Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
www.onsemi.com
applications. They are housed in the SC-70/SOT-323 which is
designed for low power surface mount applications.
COLLECTOR
3
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
1
Unique Site and Control Change Requirement

1.2. bc857cwr bc857bwr.pdf Size:401K _upd

1.3. bc856cw-g bc857cw-g.pdf Size:140K _upd

1.4. bc857cwr bc857bwr.pdf Size:401K _central

1.5. nsvbc857cwt1g.pdf Size:81K _onsemi

1.6. lbc857cwt1g.pdf Size:275K _lrc

LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
General Purpose Transistors
LBC857AWT1G, BWT1G
CWT1G
PNP Silicon
LBC858AWT1G, BWT1G
These transistors are designed for general purpose
CWT1G
amplifier applications. They are housed in the SOT–323/
S-LBC856AWT1G, BWT1G
SC–70 which is designed for low power surface mount
applications. S-LBC857AWT1G, BWT1G
Features
CWT1G
We declare t

1.7. bc856cw-g bc857cw-g.pdf Size:140K _comchip

BC857S Datasheet (PDF)

1.1. bc857s.pdf Size:50K _fairchild_semi

BC857S
E2
B2
C1
C2
SC70-6
B1
Mark: 3C pin #1 E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Pr

1.2. bc857s.pdf Size:122K _siemens

BC 857S
PNP Silicon AF Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated Transistors
in one package
Type Marking Ordering Code Pin Configuration Package
BC 857S 3Cs Q62702-2373 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter

1.3. bc856series bc857series bc858series bc859series bc860series.pdf Size:140K _infineon

BC856…-BC860…
PNP Silicon AF Transistor
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 hz and 15 kHz
• Complementary types:
BC846…-BC850… (NPN)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
1
Pb-containing package may be available upon special request
20

1.4. bc857s.pdf Size:845K _secos

BC857S
PNP Silicon
Elektronische Bauelemente
Multi-Chip Transistor
RoHS Compliant Product
SOT-363
o
.055(1.40)
8
.047(1.20)
0o
.026TYP
(0.65TYP)
.021REF
(0.525)REF
* Features
.053(1.35)
.096(2.45)
.045(1.15)
.085(2.15)
Power dissipation
O
PCM : 0.3 W (Tamp.= 25 C)
.018(0.46)
.010(0.26)
Collector current
.014(0.35)
.006(0.15)
.006(0.15)
ICM : -0.2 A .003(0.08)
.087(

1.5. bc857s.pdf Size:3090K _htsemi

BC857S
Multi-Chip TRANSISTOR (PNP)
SOT-363
FEATURES
Power dissipation
C1
B2
E2
PCM : 300 mW(Tamb=25℃)
Collector current
E1
B1
ICM : -200 mA
C2
Collector-base voltage
V(BR)CBO : -50 V
Operating and storage junction temperature range
TJ,Tstg: -55℃to +150℃
MARKING: 3C
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Symbo

1.6. bc857s.pdf Size:1324K _kexin

SMD Type Transistors
PNP Transistors
BC857S (KC857S)
■ Features
● High current gain
● Low collector-emitter saturation voltage
● For AF input stages and driver applications
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO -50
VCEO -45
Collector — Emitter Voltage V
VCES -50
Emitter — Base Voltage VEBO -5
Collector Cur

BC857BL3 Datasheet (PDF)

1.1. bc857bl3.pdf Size:858K _upd

BC857…-BC860…
PNP Silicon AF Transistor
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 hz and 15 kHz
• Complementary types:
BC847…-BC850… (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q1011)
1
BC857BL3 is not qualified according AEC Q101
Type Marking Pin

1.2. bc857bl3.pdf Size:858K _infineon

3.1. bc856blt3g bc857blt1g.pdf Size:801K _upd

BC856ALT1G Series,
SBC856ALT1G Series
General Purpose
Transistors
PNP Silicon
http://onsemi.com
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
COLLECTOR
Unique Site and Control Change Requirements; AEC-Q101
3
Qualified and PPAP Capable
1
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
BASE
Compliant
2
EMITTER
3
MAXIMUM RATINGS

3.2. bc857blt3g bc858blt3g.pdf Size:801K _upd

3.3. sbc856alt1g sbc857clt1g sbc857blt1g sbc857alt1g sbc856blt3g sbc856blt1g.pdf Size:801K _update

3.4. bc857blp.pdf Size:90K _diodes

BC857BLP
50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features Mechanical Data
• Epitaxial Die Construction • Case: DFN1006-3
• Complementary NPN Type Available (BC847BLP) • Case Material: Molded Plastic, «Green» Molding Compound. UL
Flammability Classification Rating 94V-0
• Ultra-Small Leadless Surface Mount Package
• Moisture Sensitivity: Level 1 per J-STD-020
•

3.5. bc857blp4.pdf Size:139K _diodes

BC857BLP4
45V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features Mechanical Data
• Epitaxial Die Construction • Case: DFN1006H4-3
• Ultra-Small Leadless Surface Mount Package • Case Material: Molded Plastic, «Green» Molding Compound. UL
Flammability Classification Rating 94V-0
• Ultra-low Profile (0.40mm max)
• Moisture Sensitivity: Level 1 per J-STD-020
• Complement

3.6. nsvbc857blt3g.pdf Size:86K _onsemi

BC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
http://onsemi.com
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
COLLECTOR
Qualified and PPAP Capable
3
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C unless other

3.7. lbc857blt1g.pdf Size:148K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LBC857CLT1G
PNP Silicon
Series
• Moisture Sensitivity Level: 1
S-LBC857CLT1G
• ESD Rating – Human Body Model: >4000 V
Series
ESD Rating – Machine Model: >400 V
• We declare that the material of product compliance with
RoHS requirements.
3
• S- Prefix for Automotive and Other Applications Requiring
Unique Site a

Биполярный транзистор BC857BL3 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC857BL3

Маркировка: 3F

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.33
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 250
MHz

Ёмкость коллекторного перехода (Cc): 1.5
pf

Статический коэффициент передачи тока (hfe): 125

Корпус транзистора: TSLP3-1

BC857BL3
Datasheet (PDF)

1.1. bc857bl3.pdf Size:858K _upd

1.2. bc857bl3.pdf Size:858K _infineon

3.1. bc856blt3g bc857blt1g.pdf Size:801K _upd

3.2. bc857blt3g bc858blt3g.pdf Size:801K _upd

3.3. sbc856alt1g sbc857clt1g sbc857blt1g sbc857alt1g sbc856blt3g sbc856blt1g.pdf Size:801K _update

3.4. bc857blp.pdf Size:90K _diodes

3.5. bc857blp4.pdf Size:139K _diodes

3.6. nsvbc857blt3g.pdf Size:86K _onsemi

3.7. lbc857blt1g.pdf Size:148K _lrc

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

BC857BW Datasheet (PDF)

1.1. bc857cwt1g bc857bwt1g.pdf Size:81K _upd

1.2. bc858bw-g bc857bw-g.pdf Size:140K _upd

1.3. bc857cwr bc857bwr.pdf Size:401K _upd

1.4. sbc857bwt1g.pdf Size:81K _update

1.5. bc857bw.pdf Size:41K _st

BC857BW

SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type Marking
BC857BW 3FW
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
MINIATURE SOT-323 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
THE NPN COMPLEMENTARY TYPE IS
BC847BW
APPLICATIONS
SOT-323
WELL SUITABLE FOR PORTABLE
EQUIPMENT
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE

1.6. bc857cwr bc857bwr.pdf Size:401K _central

1.7. bc856bwt1 bc857bwt1 bc858awt1-series.pdf Size:143K _onsemi

BC856BWT1 Series,
BC857BWT1 Series,
BC858AWT1 Series
General Purpose
Transistors
http://onsemi.com
PNP Silicon
COLLECTOR
3
These transistors are designed for general purpose amplifier
applications. They are housed in the SC—70/SOT—323 which is
designed for low power surface mount applications. 1
BASE
Features
? These Devices are Pb—Free, Halogen Free/BFR Free and are RoHS
2
Comp

1.8. lbc857bwt1g.pdf Size:279K _lrc

LESHAN RADIO COMPANY, LTD.
LBC856AWT1G,BWT1G
General Purpose Transistors
LBC857AWT1G,BWT1G
PNP Silicon
CWT1G
LBC858AWT1G,BWT1G
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
CWT1G
SC–70 which is designed for low power surface mount
S-LBC856AWT1G,BWT1G
applications.
S-LBC857AWT1G,BWT1G
Features
We declare that the mat

1.9. bc858bw-g bc857bw-g.pdf Size:140K _comchip

BC857C Datasheet Download — Kexin

Номер произв

BC857C

Описание

PNP Transistor

Производители

Kexin

логотип

1Page

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SMD Type
Transistors
PNP Transistor
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Features
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1
3
12

0.95+0.1

-0.1

1.9+0.1

-0.1
Unit: mm

0.1+0.05

-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
KC856
KC857
KC858
KC856
KC857
KC858
Symbol

VCBO

VCEO

VEBO

Tstg

Rating
-80
-50
-30
-65
-45
-30
-5
-0.1
200
150
-65 to +150
Unit
V
V
V
A
mW
1.Base
2.Emitter
3.collector

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SMD Type
Transistors
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
KC856
KC857
Symbol
Testconditons

VCBO Ic= -10ìA, IE=0

Min Typ Max Unit
-80
-50 V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector capacitance
KC858
KC856
KC857

VCEO Ic= -10 mA, IB=0

KC858

VEBO IE= -10ìA, IC=0

KC856

VCB= -70 V , IE=0

KC857

ICBO VCB= -45 V , IE=0

KC858

VCB= -25 V , IE=0

KC856

VCE= -60 V , IB=0

KC857

ICEO VCE= -40 V , IB=0

KC858

VCE= -25 V , IB=0

IEBO VEB= -5 V , IC=0

KC856A, 857A,858A

KC856B, 857B,858B hFE VCE= -5V, IC= -2mA

KC857C,KC858C

VCE(sat) IC=-100mA, IB= -5 mA

VBE(sat) IC= -100 mA, IB= -5mA

Cob VCB=-10V,f=1MHz

-30
-65
-45
-30
-5
120
220
420
V
V
-0.1 A
-0.1 A
-0.1 A
250
475
800
-0.5 V
-1.1 V
4.5 pF
Transition frequency

VCE= -5 V, IC= —

10mA,f=100MHz
100
MHz
Marking
NO.
Marking
NO.
Marking
NO.
Marking
KC856A
3A
KC857A
3E
KC858A
3J
KC856B
3B
KC857B
3F
KC858B
3K
KC857C
3G
KC858C
3L

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SMD Type
Transistors
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Typical Characteristics
Fig.1 Static Characteristic
Fig.2 DC Current Gain
Fig.3 Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Fig.4 Base Emitter ON Voltage
Fig.5 Collector Output Capacitance
Fig.6 Current Gain Bandwidth Product

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