Datasheet infineon bc846b

Содержание:

BC846AW Datasheet (PDF)
BC846BPN Datasheet (PDF)
BC846BL Datasheet (PDF)
BC846BLT1G Datasheet (PDF)
BC846BLT1 Datasheet (PDF)
BC846BDW Datasheet (PDF)
Datasheets
Биполярный транзистор BC846W — описание производителя. Основные параметры. Даташиты.
BC846W Datasheet (PDF)
BC846S Datasheet (PDF)

BC846AW Datasheet (PDF)

1.1. bc846bw-g bc846aw-g.pdf Size:123K _upd

Small Signal Transistor
BC846AW-G Thru. BC848CW-G (NPN)
RoHS Device
Features
-Power dissipation
PCM: 0.15W (@TA=25°C)
SOT-323
-Collector current
ICM: 0.1A
0.087 (2.20)
-Collector-base voltage
0.079 (2.00)
VCBO: BC846W=80V
3
BC847W=50V
0.053(1.35)
BC848W=30V
0.045(1.15)
-Operating and storage junction temperature
1 2
range: TJ, TSTG= -55 to +150°C
0.006 (0.15)
0.055

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BC846W SERIES
BC847W SERIES
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR BC846W and
BC847W Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERminiTM surface mount package,
designed for general purpose switching and amplifier
applications.
MARKING CODE: SEE MARKING CODE

1.3. bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf Size:46K _update

BC846AW — BC848CW
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Ideally Suited for Automatic Insertion
SOT-323
Complementary PNP Types Available
A
(BC856W-BC858W) Dim Min Max
C
A
For Switching and AF Amplifier Applications 0.25 0.40
B
1.15 1.35
Mechanical Data
B C
C
2.00 2.20
Case: SOT-323, Molded Plastic
D
0.65 Nominal
B E
Case material — UL Flammability Rating

1.4. bc846awt bc847awt bc848awt bc849awt bc850awt.pdf Size:207K _motorola

MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BC846AWT1/D
General Purpose Transistors
BC846AWT1,BWT1
NPN Silicon
BC847AWT1,BWT1,
COLLECTOR CWT1
These transistors are designed for general purpose amplifier
3
BC848AWT1,BWT1,
applications. They are housed in the SOT323/SC70 which is
designed for low power surface mount applications.
CWT1
1
BASE
2
EMITTER
MAXIMUM RA

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MCC
BC846AW/BW
Micro Commercial Components
Micro Commercial Components
BC847AW/BW/CW
20736 Marilla Street Chatsworth
CA 91311
BC848AW/BW/CW
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
Lead Free Finish/RoHS Compliant («P» Suffix designates
NPN
RoHS Compliant. See ordering information)
Low current (max. 100mA)
General Purpose
Low voltage (max. 65V)
Epoxy meets UL

1.8. bc846aw bc847aw bc848aw.pdf Size:2832K _wietron

BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
General Purpose Transistor
COLLECTOR
3
3
NPN Silicon
P b Lead(Pb)-Free
1
1
2
BASE
2
EMITTER
SOT-323(SC-70)
Maximum Ratings (T =25°C Unlesso therwise noted)
A
Rating Symbol Value Unit
Collector-Emitter Voltage BC846 65
45 V
BC847 CEO
V
30
BC848
Collector-Base Voltage BC846 80
V
V
BC847 CBO 50
BC848 30
Emitter-Base Voltage B

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LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G
General Purpose Transistors
LBC847AWT1G,BWT1G
NPN Silicon
CWT1G
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
LBC848AWT1G,BWT1G
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
CWT1G
( – )
ORDERING INFORMATION Pb Free

1.10. bc846bw-g bc846aw-g.pdf Size:123K _comchip

BC846BPN Datasheet (PDF)

2n2222a datasheet, equivalent, cross reference search

1.1. bc846bpn.pdf Size:129K _philips

BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
Rev. 01 17 July 2009 Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)
plastic package.
Table 1. Product overview
Type number Package NPN/NPN PNP/PNP
complement complement
NXP JEITA
BC846BPN SOT363 SC-88 BC846BS BC856BS
1.2 Features

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SMD Type Transistors
Complementary NPN/PNP Transistors
BC846BPN (KC846BPN)
■ Features
● Low collector capacitance
● Low collector-emitter saturation voltage
● Closely matched current gain
● Reduces number of components and board space
● No mutual interference between the transistors
6 5 4
TR2
TR1
1 2 3
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol NPN P

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BC846BPDW1,
BC847BPDW1,
BC848CPDW1 Series
Dual General Purpose
Transistors
http://onsemi.com
NPN/PNP Duals (Complementary)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-363/SC-88 which is
SOT-363
designed for low power surface mount applications.
CASE 419B
STYLE 1
Features
(3) (2) (1)
• S Prefix for Automotive and Other Ap

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Dual General Purpose Transistors
Dual General Purpose Transistors
NPN/PNP Duals (Complimentary)
DBC846BPDW1T1G
DBC847BPDW1T1G
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
DBC847CPDW1T1G
designed for low power surface mount applications.
DBC848BPDW1T1G
We declare that the material of product compliance wit

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BC846BPDW1T1G,
BC847BPDW1T1G,
BC848CPDW1T1G
Dual General Purpose
Transistors
http://onsemi.com
NPN/PNP Duals (Complementary)
These transistors are designed for general purpose amplifier
(3) (2) (1)
applications. They are housed in the SOT-363/SC-88 which is
designed for low power surface mount applications.
Features
Q1 Q2
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

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3.5. bc846bpdw bc847 bc848.pdf Size:495K _wietron

BC846BPDW Series
NPN/PNP Dual General Purpose Transistors
2 1
3
P b Lead(Pb)-Free
6
5
4
1
2
3
4
5 6
NPN+PNP
SOT-363(SC-88)
MAXIMUM RATINGS — NPN
Rating Symbol BC846 BC847 BC848 Unit
Collector-Emitter Voltage VCEO 65 45 30 V
Collector-Base Voltage VCBO 80 50 30 V
Emitter-Base Voltage VEBO 6.0 6.0 5.0 V
Collector Current — Continuous IC 100 100 100 mAdc
MAXIMUM RATINGS — PNP
Ra

3.6. lbc846bpdw1t1g.pdf Size:188K _lrc

LESHAN RADIO COMPANY, LTD.
LBC846BPDW1T1G
Dual General Purpose Transistors
LBC847BPDW1T1G
LBC847CPDW1T1G
NPN/PNP Duals (Complimentary)
LBC848BPDW1T1G
These transistors are designed for general purpose amplifier
LBC848CPDW1T1G
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
S-LBC846BPDW1T1G
We declare that the materi

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BC846BL Datasheet (PDF)

Даташит bc857c pdf ( datasheet )

1.1. bc847alt1g bc846blt1g.pdf Size:116K _upd

BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
• Moisture Sensitivity Level: 1
www.onsemi.com
• ESD Rating — Human Body Model: >4000 V
ESD Rating — Machine Model: >400 V
• S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR
3
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable
1
• These Devices are Pb-

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1.3. bc846blp4.pdf Size:145K _upd

BC846BLP4
65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features Mechanical Data
• Low Collector-Emitter Saturation Voltage, VCE(sat) • Case: X2-DFN1006-3
• Case Material: Molded Plastic, «Green» Molding Compound.
• Ultra-Small Leadless Surface Mount Package
UL Flammability Classification Rating 94V-0
• Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
• Moisture S

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1.5. sbc846blt3g.pdf Size:1432K _onsemi

BC846ALT1G Series,
SBC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
• Moisture Sensitivity Level: 1
• ESD Rating — Human Body Model: >4000 V
COLLECTOR
ESD Rating — Machine Model: >400 V
3
• AEC-Q101 Qualified and PPAP Capable
1
• S Prefix for Automotive and Other Applications Requiring Unique
BASE
Site and Control Change Requirements

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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LBC846ALT1G
NPN Silicon
Series
• Moisture Sensitivity Level: 1
S-LBC846ALT1G
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
Series
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
3
and

BC846BLT1G Datasheet (PDF)

Транзистор tip41c

1.1. bc847alt1g bc846blt1g.pdf Size:116K _upd

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1.3. lbc846blt1g.pdf Size:409K _lrc

BC846BLT1 Datasheet (PDF)

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1.3. lbc846blt1g.pdf Size:409K _lrc

BC846BDW Datasheet (PDF)

1.1. bc847bdw1t3g bc846bdw1t1g.pdf Size:144K _upd

BC846BDW1T1G,
SBC846BDW1T1G,
BC847BDW1T1G,
SBC847BDW1T1G Series,
NSVBC847BDW1T2G,
BC848CDW1T1G
http://onsemi.com
Dual General Purpose
Transistors
SOT-363
CASE 419B
NPN Duals
STYLE 1
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-363/SC-88 which is
(3) (2) (1)
designed for low power surface mount applications.
Features
Q1 Q

1.2. bc846bdw1t1g bc847bdw1t1g bc848cdw1t1g.pdf Size:127K _onsemi

BC846BDW1T1G,
BC847BDW1T1G,
BC848CDW1T1G
Dual General Purpose
Transistors
http://onsemi.com
NPN Duals
(3) (2) (1)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-363/SC-88 which is
designed for low power surface mount applications.
Q1 Q2
Features
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
(4) (5) (6)
Complian

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1.4. bc846bdw bc847 bc848.pdf Size:101K _wietron

BC846BDW Series
General Purpose Transistor
2 1
3
6
5
4
NPN Duals
1
2
P b Lead(Pb)-Free
3
4
5 6
SOT-363(SC-88)
NPN+NPN
Maximum Ratings
BC846 BC847
Rating Symbol BC848
Unit
65 45
Collector-Emitter Voltage V 30
CEO Vdc
80 50
Collector-Base Voltage VCBO 30
Vdc
6.0
Emitter-Base Voltage VEBO 6.0 5.0
Vdc
Collector Current-Continuous IC 100 100
100 mAdc
Thermal Characteristi

1.5. lbc846bdw1t1g.pdf Size:228K _lrc

LESHAN RADIO COMPANY, LTD.
LBC846ADW1T1G
Dual General Purpose Transistors
LBC846BDW1T1G
NPN Duals
LBC847BDW1T1G
These transistors are designed for general purpose amplifier LBC847CDW1T1G
LBC848BDW1T1G
applications. They are housed in the SOT–363/SC–88 which is
LBC848CDW1T1G
designed for low power surface mount applications.
S-LBC846ADW1T1G
We declare that the material of produc

Datasheets

Просмотр и загрузка
Datasheet BC846, BC847, BC848, BC849, BC550

PDF, 187 Кб, Язык: анг., Файл закачен: 7 июл 2019, Страниц: 19NPN Silicon AF Transistors

Выписка из документа

BC846.-BC850.NPN Silicon AF Transistors• For AF input stages and driver applications• High current gain• Low collector-emitter saturation voltage• Low noise between 30 Hz and 15 kHz• Complementary types:BC856.-BC860.(PNP)• Pb-free (RoHS compliant) package 1)• Qualified according AEC Q101 1Pb-containing package may be available upon special request 1 2007-04-20 BC846.-BC850.Type Marking Pin Configuration BC846A 1As 1=B 2=E 3=C -SOT23 BC846B 1Bs 1=B 2=E 3=C -SOT23 BC846BW 1Bs 1=B 2=E 3=C -SOT323 BC847A 1Es 1=B 2=E 3=C -SOT23 BC847B 1Fs 1=B 2=E 3=C -SOT23 BC847BF 1Fs 1=B 2=E 3=C -TSFP-3 BC847BL3 1F 1=B 2=E 3=C -TSLP-3-1 BC847BT 1F 1=B 2=E 3=C -SC75 BC847BW 1Fs 1=B 2=E 3=C -SOT323 BC847C 1Gs 1=B 2=E 3=C -SOT23 BC847CW 1Gs 1=B 2=E 3=C -SOT323 BC848A 1Js 1=B 2=E 3=C -SOT23 BC848AW 1Js 1=B 2=E 3=C -SOT323 BC848B 1Ks 1=B 2=E 3=C -SOT23 BC848BF 1Ks 1=B 2=E 3=C -TSFP-3 BC848BL3 1K 1=B 2=E 3=C -TSLP-3-1 BC848BW 1Ks 1=B 2=E 3=C -SOT323 BC848C 1Ls 1=B 2=E 3=C -SOT23 BC848CW 1Ls 1=B 2=E 3=C -SOT323 BC849B 2Bs 1=B 2=E 3=C -SOT23 BC849BF 2Bs 1=B 2=E 3=C -TSFP-3 BC849C 2Cs 1=B 2=E 3=C -SOT23 BC849CW 2Cs 1=B 2=E 3=C -SOT323 BC850B 2Fs 1=B 2=E 3=C -SOT23 BF850BF 2Fs 1=B 2=E 3=C -TSFP-3 BC850BW 2Fs 1=B 2=E 3=C -SOT323 BC850C 2Gs 1=B 2=E 3=C -SOT23 BC850CW 2Gs 1=B 2=E 3=C -SOT323 2 Package 2007-04-20 BC846.-BC850.Maximum RatingsParameter Symbol Collector-emitter voltage VCEO Value V BC846. 65 BC847., BC850. 45 BC848., BC849. 30 Collector-emitter voltage Unit VCES BC846. 80 BC847., BC850. 50 BC848., BC849. 30 Collector-base voltage VCBO BC846. 80 BC847., BC850. 50 BC848., BC849. 30 Emitter-base voltage VEBO BC846. 6 BC847., BC850. 6 BC848., BC849. 6 Collector current IC 100 Peak collector current ICM 200 Total power dissipation-Ptot mW TS ≤ 71 °C, BC846-BC850 330 TS ≤ 128 °C, BC847F-BC850F 250 TS ≤ 135 °C, BC847L3-BC848L3 250 TS ≤ 109 °C, BC847T 250 TS ≤ 124 °C, BC846W-BC850W 250 Junction temperature Tj Storage temperature Tstg 3 mA 150 °C -65 . 150 2007-04-20 BC846.-BC850.Thermal ResistanceParameterJunction -soldering point 1) SymbolRthJS Value BC846-BC850 ≤ 240 BC847F-BC850F ≤ 90 BC847L3-BC848L3 ≤ 60 BC847T ≤ 165 BC846W-BC850W ≤ 105 1For UnitK/W calculation of RthJA please refer to Application Note Thermal Resistance 4 2007-04-20 BC846.-BC850.Electrical Characteristics at TA = 25°C, unless otherwise specifiedSymbolValuesUnitParameter …

Datasheet

PDF, 194 Кб

Datasheet

LIB, 136 Кб

Биполярный транзистор BC846W — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC846W

Маркировка: 1D_1D-_1D*_1Dp_1Dt_1DW

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.2
W

Макcимально допустимое напряжение коллектор-база (Ucb): 80
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 3
pf

Статический коэффициент передачи тока (hfe): 110

Корпус транзистора: SOT323

BC846W
Datasheet (PDF)

1.1. bc846w bc847w 3.pdf Size:55K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC846W; BC847W
NPN general purpose transistors
1999 Apr 23
Product specification
Supersedes data of 1997 Mar 27
Philips Semiconductors Product specification
NPN general purpose transistors BC846W; BC847W
FEATURES PINNING
Low current (max. 100 mA)
PIN DESCRIPTION
Low voltage (max. 65 V).
1 base
2 emitter
APPLICATIONS
3

1.2. bc846w bc847w bc848w bc849w bc850w.pdf Size:272K _siemens

NPN Silicon AF Transistor BC 846 W … BC 850 W
Features
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30Hz and 15 kHz
Complementary types: BC 856 W, BC 857 W,
BC 858 W,BC 859 W,
BC 860 W (PNP)
Type Marking Ordering code Pin Configuration Package
(tape and reel) 1 2 3
B E C
BC 846 AW 1 As Q62702-C2319 SOT 3

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BC846AW,BW
BC847AW, BW, CW
Elektronische Bauelemente
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
? Ideally suited for automatic insertion
? For Switching and AF Amplifier Applications
?Base
?Emitter
?Collector
SOT-323
A
L
Collector 3
3
??
MARKING
Top View C B
BC846AW=1A;BC84

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W
SOT-323
NPN Formed SMD Package
Marking
BC846W =1D BC847AW =1E
BC846AW =1A BC847BW =1F
BC846BW =1B BC847CW =1G
BC847W =1H BC848W =1M
General Purpose Switching and Amplification.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified other

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SEMICONDUCTOR BC846W/7W/8W
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
E
M B M
DIM MILLIMETERS
FEATURES
_
A
+
2.00 0.20
D
2
High Voltage : BC846W VCEO=65V. _
+
B 1.25 0.15
_
+
C 0.90 0.10
For Complementary With PNP Type BC856W/857W/858W.
3
1
D 0.3+0.10/-0.05
_
E +
2.10 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.0

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BC846AW,BW
BC847AW,BW,CW
BC848AW,BW,CW
STO-323 Transistor(NPN)
1. BASE
2. EMITTER
SOT-323
3. COLLECTOR
Features

Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage BC846W 80
BC847W 50 V
BC848W 3

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SMD Type Transistors
NPN Transistors
BC846W,BC847W,BC848W
(KC846W,KC847W,KC848W)
■ Features
● Ideally suited for automatic insertion
● For Switching and AF Amplifier Applications
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
BC846W 80
Collector — Base Voltage BC847W VCBO 50
BC848W 30
BC846W 65
Collector — Emitter Volt

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

BC846S Datasheet (PDF)

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DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BC846S
NPN general purpose double
transistor
Product specification 1999 Sep 01
Supersedes data of 1999 May 28
Philips Semiconductors Product specification
NPN general purpose double transistor BC846S
FEATURES
Two transistors in one package
Reduces number of components and board space
6 5 4
handbook, halfpage
6 5 4

1.2. bc846s.pdf Size:200K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BC846S
NPN general purpose double
transistor
Product data sheet 1999 Sep 01
Supersedes data of 1999 May 28
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC846S
FEATURES
Two transistors in one package
Reduces number of components and board space
6 5 4
handbook, halfpage
6 5 4
No mut

1.3. bc846s.pdf Size:40K _siemens

BC 846S
NPN Silicon AF Transistor Array
4
For AF input stages and driver applications
5
High current gain
6
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with high matching in one package
3
2
VPS05604
1
Type Marking Ordering Code Pin Configuration Package
BC 846S 1Ds Q62702-C2529 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings

1.4. bc846series bc847series bc848series bc849series bc850series.pdf Size:182K _infineon

BC846…-BC850…
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
BC856…-BC860…(PNP)
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
1
Pb-containing package may be available upon special request
2007-04-20
1
BC8

1.5. bc846s.pdf Size:97K _secos

BC846S
Plastic-Encapsulate
Multi-Chip (NPN+NPN) Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES SOT-363
Two transistors in one package
A
Reduces number of components and board space
E
No mutual interference between the transistors L
6 5 4
MARKING:
:
:
:
B
4Ft
1 2 3
F
C H
PACKAGE INFORMATION

1.6. bc846s.pdf Size:272K _first_silicon

SEMICONDUCTOR
BC846S ~BC850S
TECHNICAL DATA
General Purpose Transistors
NPN Silicon
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
3
– Machine Model: >400 V
2
1
MAXIMUM RATINGS
SOT–23
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO Vdc
BC846 65
BC847, BC850 45
BC848, BC849 30
3
COLLECTOR
Collector–Base Voltage VCBO Vdc
BC846