Datasheet nxp bc847c

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Datasheets
Datasheets
BC847BPN Datasheet (PDF)
BC847BW Datasheet (PDF)
BC847CLT1 Datasheet (PDF)
BC847CW Datasheet (PDF)
BC847PN Datasheet (PDF)
BC847BDW Datasheet (PDF)
BC847BLT1 Datasheet (PDF)
BC847S Datasheet (PDF)

Datasheets

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Datasheet BC847, BC547

PDF, 100 Кб, Язык: анг., Файл закачен: 6 апр 2019, Страниц: 1545 V, 100 mA NPN general-purpose transistors

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BC847/BC547 series45 V, 100 mA NPN general-purpose transistorsRev. 07 — 10 December 2008 Product data sheet 1. Product profile1.1 General descriptionNPN general-purpose transistors in small plastic packages.Table 1. Product overview Type numberBC847 Package PNP complement NXP JEITA JEDEC SOT23 -TO-236AB BC857 BC847A BC857A BC847B BC857B BC847B/DG -BC847CBC847W BC857CSOT323 SC-70 -BC857W BC847AW BC857AW BC847BW BC857BW BC847BW/DG -BC847CW BC857CW BC847T SOT416 SC-75 -BC847AT BC857TBC857AT BC847AT/DG -BC847BT BC857BT BC847CT BC857CT BC847AM SOT883 SC-101 -BC857AM BC847BM BC857BM BC847CM BC857CM BC547 SOT54 SC-43A TO-92 BC557 BC547B BC557B BC547C BC557C /DG: halogen-free Also available in SOT54A and SOT54 variant packages (see Section 2). BC847/BC547 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 1.2 Featuresn Low currentn Low voltagen Three different gain selections 1.3 Applicationsn General-purpose switching and amplification 1.4 Quick reference dataTable 2. Quick reference data Symbol Parameter Conditions VCEO collector-emitter voltage open base IC collector current hFE DC current gain Min Typ Max Unit -45 V -100 mA 110 -800 hFE group A 110 180 220 hFE group B 200 290 450 hFE group C 420 520 800 VCE = 5 V; IC = 2 mA 2. Pinning informationTable 3.Pin PinningDescription Simplified outline Graphic symbol SOT23, SOT323, SOT4161 base 2 emitter 3 collector 3 31 1 2 2 sym021 006aaa144 SOT8831 base 2 emitter 1 3 collector 2 331 …

Datasheets

2n2222a datasheet, equivalent, cross reference search

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Datasheet BC847, BC547

PDF, 100 Кб, Язык: анг., Файл закачен: 6 апр 2019, Страниц: 1545 V, 100 mA NPN general-purpose transistors

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BC847BPN Datasheet (PDF)

Даташит bc857c pdf ( datasheet )

1.1. bc847bpn.pdf Size:101K _philips

BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Rev. 04 18 February 2009 Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces numbe

1.2. bc847bpn 2.pdf Size:53K _philips

DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BC847BPN
NPN/PNP general purpose
transistor
1999 Apr 26
Preliminary specification
Supersedes data of 1997 Jul 09
Philips Semiconductors Preliminary specification
NPN/PNP general purpose transistor BC847BPN
FEATURES PINNING
Low collector capacitance
PIN DESCRIPTION
Low collector-emitter saturation voltage
1, 4 emitter

1.3. bc847bpn.pdf Size:1957K _kexin

SMD Type Transistors
Composite Transistors
BC847BPN (KC847BPN)
■ Features
● Low collector capacitance
● Low collector-emitter saturation voltage
● Closely matched current gain
● Reduces number of components and board space
● No mutual interference between the transistors
C1 B2 E2
0.5 mm (min)
PNP
NPN
E1 B1 C2
1.9 mm
■ Absolute Maximum Ratings Ta = 25℃
Parame

BC847BW Datasheet (PDF)

Datasheet infineon bc846b

1.1. bc846awr bc847bwr.pdf Size:417K _upd

BC846W SERIES
BC847W SERIES
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR BC846W and
BC847W Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERminiTM surface mount package,
designed for general purpose switching and amplifier
applications.
MARKING CODE: SEE MARKING CODE

1.2. bc846bwt1g bc847bwt1g.pdf Size:68K _upd

BC846, BC847, BC848
Series
General Purpose
Transistors
NPN Silicon
http://onsemi.com
These transistors are designed for general purpose amplifier
applications. They are housed in the SC-70/SOT-323 which is
COLLECTOR
designed for low power surface mount applications.
3
Features
1
• Pb-Free Packages are Available
BASE
2
EMITTER
MAXIMUM RATINGS
3
Rating Symbol Value Unit
SC-7

1.3. bc848bw-g bc847bw-g.pdf Size:123K _upd

Small Signal Transistor
BC846AW-G Thru. BC848CW-G (NPN)
RoHS Device
Features
-Power dissipation
PCM: 0.15W (@TA=25°C)
SOT-323
-Collector current
ICM: 0.1A
0.087 (2.20)
-Collector-base voltage
0.079 (2.00)
VCBO: BC846W=80V
3
BC847W=50V
0.053(1.35)
BC848W=30V
0.045(1.15)
-Operating and storage junction temperature
1 2
range: TJ, TSTG= -55 to +150°C
0.006 (0.15)
0.055

1.4. bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf Size:46K _update

BC846AW — BC848CW
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Ideally Suited for Automatic Insertion
SOT-323
Complementary PNP Types Available
A
(BC856W-BC858W) Dim Min Max
C
A
For Switching and AF Amplifier Applications 0.25 0.40
B
1.15 1.35
Mechanical Data
B C
C
2.00 2.20
Case: SOT-323, Molded Plastic
D
0.65 Nominal
B E
Case material — UL Flammability Rating

1.5. bc847bw bc847cw.pdf Size:42K _st

BC847BW
BC847CW

SMALL SIGNAL NPN TRANSISTORS
PRELIMINARY DATA
Type Marking
BC847BW 1FW
BC847CW 1GW
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
MINIATURE SOT-323 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
BC847BW — THE PNP COMPLEMENTARY
TYPE IS BC857BW
SOT-323
APPLICATIONS
WELL SUITABLE FOR PORTABLE
EQUIPMENT
SMALL LOAD SWITCH TRANSISTORS
WITH HIGH

1.6. sbc847bwt1g.pdf Size:109K _onsemi

BC846, BC847, BC848
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
www.onsemi.com
applications. They are housed in the SC-70/SOT-323 which is
designed for low power surface mount applications.
COLLECTOR
Features
3
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC

1.7. lbc847bwt1g.pdf Size:391K _lrc

LESHAN RADIO COMPANY, LTD.
LBC846AWT1G,BWT1G
General Purpose Transistors
LBC847AWT1G,BWT1G
NPN Silicon
CWT1G
We declare that the material of product compliance with RoHS requirements.
LBC848AWT1G,BWT1G
CWT1G
( – )
ORDERING INFORMATION Pb Free
S-LBC846AWT1G,BWT1G
Device Package Shipping
S-LBC847AWT1G,BWT1G
LBC846AWT1G SC-70
3000/Tape&Reel
S-LBC846AWT1G
CWT1G
LBC846AWT3G SC-70

BC847CLT1 Datasheet (PDF)

1.1. bc847blt3g bc847clt1g.pdf Size:131K _upd

BC846ALT1 Series
BC846, BC847 and BC848 are Preferred Devices
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
• Moisture Sensitivity Level: 1
• ESD Rating — Human Body Model: >4000 V
COLLECTOR
3
ESD Rating — Machine Model: >400 V
• Pb-Free Packages are Available
1
BASE
MAXIMUM RATINGS
2
Rating Symbol Value Unit
EMITTER
Collector-Emitter Voltage VCEO V

1.2. sbc847clt1g sbc848blt1g.pdf Size:1432K _update

BC846ALT1G Series,
SBC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
• Moisture Sensitivity Level: 1
• ESD Rating — Human Body Model: >4000 V
COLLECTOR
ESD Rating — Machine Model: >400 V
3
• AEC-Q101 Qualified and PPAP Capable
1
• S Prefix for Automotive and Other Applications Requiring Unique
BASE
Site and Control Change Requirements

1.3. lbc847clt1g.pdf Size:404K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• Moisture Sensitivity Level: 1 LBC846ALT1G
S-LBC846ALT1G
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
Series
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Chang

BC847CW Datasheet (PDF)

1.1. bc847aw-g bc847cw-g.pdf Size:123K _upd

1.2. bc848awt1g bc847cwt1g.pdf Size:68K _upd

1.3. bc847cwr.pdf Size:417K _upd

1.4. bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf Size:46K _update

1.5. sbc847cwt3g.pdf Size:109K _update

1.6. sbc847cwt1g.pdf Size:109K _update

1.7. bc847bw bc847cw.pdf Size:42K _st

BC847BW
BC847CW

1.8. lbc847cwt1g.pdf Size:402K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
NPN Silicon
We declare that the material of product compliance with RoHS requirements. CWT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site
LBC848AWT1G,BWT1G
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
CWT1G
( – )
ORDERING INFORMATION Pb Free

BC847PN Datasheet (PDF)

1.1. bc847pn.pdf Size:166K _siemens

BC 847PN
NPN/PNP Silicon AF Transistor Array
For AF input stages and driver applivations
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
PIN Configuration
NPN-Transistor 1 = E 2 = B 6 = C
PNP-Transistor 4 = E 5 = B 3 = C
Type Marking Ordering Code Package
BC 847PN 1Ps Q627

1.2. bc847pn.pdf Size:89K _diodes

BC847PN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features Mechanical Data
Epitaxial Die Construction Case: SOT-363
Two Internally Isolated NPN/PNP Transistors in one package Case Material: Molded Plastic, Green Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Ultra-Small Surface Mount Package
Moisture Sensitivity: Level 1 per J-STD-020

1.3. bc846pn bc846upn bc847pn.pdf Size:106K _infineon

BC846PN/UPN_BC847PN
NPN/PNP Silicon AF Transistor Arrays
For AF input stage and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP
transistor in one package
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BC846PN
BC846UPN
BC847PN
C1 B2 E2
6 5 4
TR2
TR1
1 2 3
E1 B1 C2
EHA07177
Type M

1.4. bc847pn.pdf Size:693K _secos

BC847PN
NPN — PNP Silicon
Multi-Chip Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-363
FEATURE
? Epitaxial Die Construction
? Two internal isolated NPN/PNP transistors in one package
? Power Dissipation
PCM : 0.2 W (Temp. = 25?C)
? Collector Current
ICM : 0.1A
? Collector-base Voltage
V(BR)CBO : 50/-50 V
? Operating & Storage Junction Temperature
TJ, T

1.5. bc847pn.pdf Size:237K _lge

BC847PN
Complementary Transistor(PNP and NPN)
SOT-363
Features

Epitaxial Die Construction

Two internal isolated NPN/PNP Transistors in one package
MAKING: 7P
Dimensions in inches and (millimeters)
MAXIMUM RATINGS TR1 (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltag

BC847BDW Datasheet (PDF)

1.1. bc847bdw1t1g bc848cdw1t1g.pdf Size:144K _upd

BC846BDW1T1G,
SBC846BDW1T1G,
BC847BDW1T1G,
SBC847BDW1T1G Series,
NSVBC847BDW1T2G,
BC848CDW1T1G
http://onsemi.com
Dual General Purpose
Transistors
SOT-363
CASE 419B
NPN Duals
STYLE 1
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-363/SC-88 which is
(3) (2) (1)
designed for low power surface mount applications.
Features
Q1 Q

1.2. bc847bdw1t3g bc846bdw1t1g.pdf Size:144K _upd

1.3. bc846bdw1t1g bc847bdw1t1g bc848cdw1t1g.pdf Size:127K _onsemi

BC846BDW1T1G,
BC847BDW1T1G,
BC848CDW1T1G
Dual General Purpose
Transistors
http://onsemi.com
NPN Duals
(3) (2) (1)
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT-363/SC-88 which is
designed for low power surface mount applications.
Q1 Q2
Features
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
(4) (5) (6)
Complian

1.4. sbc847bdw1t1g.pdf Size:144K _onsemi

1.5. nsvbc847bdw1t2g.pdf Size:144K _onsemi

1.6. sbc847bdw1t3g.pdf Size:144K _onsemi

1.7. lbc847bdw1t1g.pdf Size:230K _lrc

LESHAN RADIO COMPANY, LTD.
LBC846ADW1T1G
Dual General Purpose Transistors
LBC846BDW1T1G
LBC847BDW1T1G
NPN Duals
LBC847CDW1T1G
These transistors are designed for general purpose amplifier
LBC848BDW1T1G
applications. They are housed in the SOT–363/SC–88 which is
LBC848CDW1T1G
designed for low power surface mount applications.
S-LBC846ADW1T1G
We declare that the material of produ

BC847BLT1 Datasheet (PDF)

1.1. bc847blt1g bc847clt3g.pdf Size:131K _upd

1.2. sbc847blt1g.pdf Size:123K _onsemi

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
SBC847BLT1G
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
3
• We declare that the material of product compliance with
RoHS requirements.
1
MAXIMUM RATINGS
2
Rating Symbol Value Unit
SOT–23
Collector–Emitter Voltage VCEO 45 Vdc
3
COLLECT

1.3. lbc847blt1g.pdf Size:415K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• Moisture Sensitivity Level: 1
LBC846ALT1G
• ESD Rating – Human Body Model: >4000 V
S-LBC846ALT1G
ESD Rating – Machine Model: >400 V
Series
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Chan

BC847S Datasheet (PDF)

1.1. bc847s.pdf Size:51K _fairchild_semi

BC847S
E2
B2
C1
C2
SC70-6
B1
Mark: 1C pin #1 E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Proce

1.2. bc847s.pdf Size:119K _siemens

BC 847S
NPN Silicon AF Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated Transistors
in one package
Type Marking Ordering Code Pin Configuration Package
BC 847S 1Cs Q62702-2372 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter

1.3. bc846series bc847series bc848series bc849series bc850series.pdf Size:182K _infineon

BC846…-BC850…
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
BC856…-BC860…(PNP)
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
1
Pb-containing package may be available upon special request
2007-04-20
1
BC8

1.4. bc847s.pdf Size:279K _secos

BC847S
NPN Silicon
Elektronische Bauelemente
Multi-Chip Transistor
RoHS Compliant Product
SOT-363
o
.055(1.40)
8
.047(1.20)
0o
.026TYP
(0.65TYP)
.021REF
* Features
(0.525)REF
.053(1.35)
.096(2.45)
Power dissipation
.045(1.15)
.085(2.15)
O
PCM : 0.3 W (Tamp.= 25 C)
Collector current .018(0.46)
.010(0.26)
ICM : 0.2 A
.014(0.35)
.006(0.15)
.006(0.15)
.003(0.08)
Collec

1.5. bc847s.pdf Size:2746K _htsemi

BC847S
Multi-chip transistor (NPN)
SOT-363
APPLICATION
C1
B2
E2
This device is designed for general purpose amplifier applications
Marking :1C
E1
B1
C2
MAXIMUM RATINGS (Ta=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50
V
VCEO Collector-Emitter Voltage 45
VEBO Emitter-Base Voltage 6
IC Collector Current-Continuous 200 mA
PD

1.6. bc847s.pdf Size:568K _wietron

BC847S
2 1
3
Dual General Purpose Transistor
6
5
4
NPN Silicon
1
2
3
P b Lead(Pb)-Free
4
5 6
SOT -363(SC-88)
NPN+NPN
Maximum Ratings
Rating Unit
Symbol Value
Collector-Emitter Voltage V
CEO V
45
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current-Continuous IC
mA
200
Thermal Characteristics
Characteristics Symbol Max Unit
mW
Total Device