Даташит d1047 pdf ( datasheet )
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KTD1047 Datasheet (PDF)
1.1. ktd1047.pdf Size:72K _kec
SEMICONDUCTOR KTD1047
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A Q B
K
FEATURES
Complementary to KTB817.
Recommended for 60W Audio Frequency
DIM MILLIMETERS
Amplifier Output Stage.
A 15.9 MAX
B 4.8 MAX
_
C 20.0 + 0.3
_
D 2.0 + 0.3
D
d 1.0+0.3/-0.25
E 2.0
F 1.0
MAXIMUM RATING (Ta=25 )
G 3.3 MAX
d
H 9.0
CHARACTERISTIC SYMBOL RATIN
1.2. ktd1047b.pdf Size:365K _kec
SEMICONDUCTOR KTD1047B
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A
FEATURES
Q B
N
O K
·Complementary to KTB817B.
DIM MILLIMETERS
·Recommended for 60W Audio Frequency _
A +
15.60 0.20
_
B
4.80 + 0.20
Amplifier Output Stage.
_
C 19.90 + 0.20
_
D 2.00 0.20
+
_
d +
1.00 0.20
_
E +
3.00 0.20
_
F 3.80 + 0.20
_
G 3.50 + 0.20
D _
5.1. ktc2791 ktc2878 ktc3112 ktc3120s ktc3121s ktc3148 ktc3196 ktc3197 ktc3680 ktc3881s ktc9011 ktc9016 ktc9018 ktd1069 ktd1427 ktd1554.pdf Size:495K _update_bjt
5.2. ktd1003.pdf Size:74K _kec
SEMICONDUCTOR KTD1003
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
A
C
High DC Current Gain
H
: hFE=800 3200. (VCE=5.0V, IC=300mA).
G
Wide Area of Safe Operation.
Low Collector Saturation Voltage
DIM MILLIMETERS
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
A 4.70 MAX
D _
+
D B 2.50 0.20
K C 1.70 MAX
D 0.45+0.15/-0.10
F F
E 4.25 MAX
_
+
5.3. ktd1028.pdf Size:307K _kec
SEMICONDUCTOR KTD1028
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
High DC Current Gain
: hFE=800 3200 (VCE=5.0V, IC=300mA).
Wide Area of Safe Operation.
Low Collector Saturation Voltage.
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
VCBO
Collector-Base Voltage 60 V
VCEO
Collector-Emitter Vo
2SD1047C Datasheet (PDF)
1.1. 2sb817c 2sd1047c.pdf Size:445K _update_bjt
Ordering number : ENN6987
2SB817C/2SD1047C
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SB817C/2SD1047C
140V / 12A, AF 80W Output Applications
Features Package Dimensions
• Large current capacitance. unit : mm
• Wide ASO and high durability against breakdown. 2022A
• Adoption of MBIT process.
[2SB817C/2SD1047C]
15.6
3.2
4.8
14.0
2.0
3.1. 2sd1047e.pdf Size:125K _update_bjt
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features Package Dimensions
· Capable of being mounted easily because of one-
unit:mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817/2SD1047]
· Wide ASO because of on-chip ballast re
3.2. 2sd1047p.pdf Size:30K _sanyo
Ordering number : ENN6572
2SB817P / 2SD1047P
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
Package Dimensions
Capable of being mounted easily because of one- unit : mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817P / 2S
3.3. 2sb817p 2sd1047p.pdf Size:30K _sanyo
Ordering number : ENN6572
2SB817P / 2SD1047P
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
Package Dimensions
Capable of being mounted easily because of one- unit : mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817P / 2S
3.4. 2sd1047.pdf Size:125K _sanyo
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features Package Dimensions
Capable of being mounted easily because of one-
unit:mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817/2SD1047]
Wide ASO because of on-chip ballast resista
3.5. 2sd1047e.pdf Size:206K _inchange_semiconductor
isc Product Specification
isc Silicon NPN Power Transistor 2SD1047E
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 140V(Min)
(BR)CEO
·Good Linearity of h
FE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB817E
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for audio frequency a
3.6. 2sd1047.pdf Size:218K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1047
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 140V(Min)
(BR)CEO
·Good Linearity of h
FE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB817
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Recommend for 60W audio frequency amplifier output
stage a
STU438S Datasheet (PDF)
1.1. stu438s std438s.pdf Size:112K _samhop
Gree
r
r
P
Pr
Pr
Pro
STU/D438S
a
S mHop Microelectronics C orp.
Ver 1.4
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
Super high dense cell design for low RDS(ON).
RDS(ON) (m ) Max
VDSS ID
Rugged and reliable.
9 @ VGS=10V
TO-252 and TO-251 Package.
50A
40V
11 @ VGS=4.5V
G
G
S
S
STU SERIES
STD SERIES
( )
TO — 252AA D- PAK (
4.1. stu438a std438a.pdf Size:127K _samhop
Green
Product
STU/D438A
a
S mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
Super high dense cell design for low RDS(ON).
RDS(ON) (mΩ) Max
VDSS ID
Rugged and reliable.
9 @ VGS=10V
TO-252 and TO251 Package.
40V 47A
11 @ VGS=4.5V
G
G
S
S
STU SERIES
STD SERIES
(D- )
TO — 252AA PAK ( )
TO — 251 I — PAK
5.1. stu434s std434s.pdf Size:123K _samhop
Green
Product
STU/D434S
a
S mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
Super high dense cell design for low RDS(ON).
RDS(ON) (mΩ) Max
VDSS ID
Rugged and reliable.
9.2 @ VGS=10V
TO-252 and TO-251 Package.
50A
40V
11.5 @ VGS=4.5V
G
G
S
S
STU SERIES
STD SERIES
( )
TO — 252AA D- PAK ( )
TO —
5.2. stu437s std437s.pdf Size:128K _samhop
STU437S
Green
Product
STD437S
a
S mHop Microelectronics C orp.
Ver 1.0
P-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
Super high dense cell design for low RDS(ON).
VDSS ID RDS(ON) (mΩ) Max
Rugged and reliable.
16 @ VGS=-10V
Suface Mount Package.
-40V -32A
30 @ VGS=-4.5V
G
S
STU SERIES
STD SERIES
( )
TO — 252AA D- PAK ( )
TO — 251
5.3. stu432s std432s.pdf Size:121K _samhop
Green
Product
STU/D432S
a
S mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
Super high dense cell design for low RDS(ON).
RDS(ON) (mΩ) Max
VDSS ID
Rugged and reliable.
9 @ VGS=10V
TO-252 and TO-251 Package.
50A
40V
11 @ VGS=4.5V
G
G
S
S
STU SERIES
STD SERIES
( )
TO — 252AA D- PAK ( )
TO — 251
5.4. stu435s std435s.pdf Size:110K _samhop
Gr
P
Pr
P
P
STU/D435S
a
S mHop Microelectronics C orp.
Ver 1.0
P-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
Super high dense cell design for low RDS(ON).
VDSS ID RDS(ON) (mΩ) Max
Rugged and reliable.
17.5 @ VGS=10V
Suface Mount Package.
-40V -38A
27 @ VGS=4.5V
G
G
S
S
STU SERIES
STD SERIES
( )
TO — 252AA D- PAK ( )
TO — 251
5.5. stu432l std432l.pdf Size:110K _samhop
Gre
r
r
P
Pr
Pr
Pro
STU/D432L
a
S mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
Super high dense cell design for low RDS(ON).
RDS(ON) (mΩ) Max
VDSS ID
Rugged and reliable.
10 @ VGS=10V
TO-252 and TO251 Package.
40V 42A
15 @ VGS=4.5V
G
G
S
S
STU SERIES
STD SERIES
(D- )
TO — 252AA PAK ( )
TO —
2SD1521 Datasheet (PDF)
1.1. 2sd1521.pdf Size:34K _hitachi
2SD1521
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3
1. Emitter ID
2. Collector
3. Base
1
2 kΩ 0.5 kΩ
2
3
(Typ) (Typ)
1
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 7V
Collector current IC 1.5 A
Collector peak current IC (peak) 3.0 A
Collector
4.1. 2sd1525.pdf Size:175K _toshiba
2SD1525
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1525
High Current Switching Applications
Unit: mm
• High collector current: IC = 30 A
• High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A)
• Monolithic construction with built-in base-emitter shunt resistor.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol
4.2. 2sd1520.pdf Size:373K _hitachi
4.3. 2sd1527.pdf Size:32K _hitachi
2SD1527
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
TO-220AB
1. Base
2. Collector
(Flange)
1
3. Emitter
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage VCBO 1000 V
Collector to emitter voltage VCEO 1000 V
Emitter to base voltage VEBO 5V
Collector current IC 0.5 A
Collector power dissipation PC 1.8 W
4.4. 2sd1522.pdf Size:206K _inchange_semiconductor
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1522
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 450V(Min)
(BR)CEO
·High DC Current Gain
: h = 500(Min) @ I = 5A, V = 3V
FE C CE
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier and
4.5. 2sd1523.pdf Size:209K _inchange_semiconductor
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1523
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 450V(Min)
(BR)CEO
·High DC Current Gain
: h = 500(Min) @ I = 8A, V = 3V
FE C CE
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier and
4.6. 2sd1525.pdf Size:213K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1525
DESCRIPTION
·High DC Current Gain
: h = 1000(Min.)@ I = 20A
FE C
·Collector-Emitter Breakdown Voltage-
: V = 100V(Min.)
(BR)CEO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMET
4.7. 2sd1524.pdf Size:206K _inchange_semiconductor
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1524
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 450V(Min)
(BR)CEO
·High DC Current Gain
: h = 300(Min) @ I = 5A, V = 3V
FE C CE
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier and
4.8. 2sd1528.pdf Size:214K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1528
DESCRIPTION
·Low Collector Saturation Voltage
: V = 0.5V(Max)@ I = 2A
CE(sat) C
·Collector-Emitter Breakdown Voltage-
: V = 80V (Min)
(BR)CEO
·Good Linearity of h
FE
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier,power switching appli
2SD1047O Datasheet (PDF)
3.1. 2sd1047e.pdf Size:125K _update_bjt
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features Package Dimensions
· Capable of being mounted easily because of one-
unit:mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817/2SD1047]
· Wide ASO because of on-chip ballast re
3.2. 2sb817c 2sd1047c.pdf Size:445K _update_bjt
Ordering number : ENN6987
2SB817C/2SD1047C
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SB817C/2SD1047C
140V / 12A, AF 80W Output Applications
Features Package Dimensions
• Large current capacitance. unit : mm
• Wide ASO and high durability against breakdown. 2022A
• Adoption of MBIT process.
[2SB817C/2SD1047C]
15.6
3.2
4.8
14.0
2.0
3.3. 2sd1047p.pdf Size:30K _sanyo
Ordering number : ENN6572
2SB817P / 2SD1047P
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
Package Dimensions
Capable of being mounted easily because of one- unit : mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817P / 2S
3.4. 2sb817p 2sd1047p.pdf Size:30K _sanyo
Ordering number : ENN6572
2SB817P / 2SD1047P
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
Package Dimensions
Capable of being mounted easily because of one- unit : mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817P / 2S
3.5. 2sd1047.pdf Size:125K _sanyo
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features Package Dimensions
Capable of being mounted easily because of one-
unit:mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817/2SD1047]
Wide ASO because of on-chip ballast resista
3.6. 2sd1047e.pdf Size:206K _inchange_semiconductor
isc Product Specification
isc Silicon NPN Power Transistor 2SD1047E
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 140V(Min)
(BR)CEO
·Good Linearity of h
FE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB817E
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for audio frequency a
3.7. 2sd1047.pdf Size:218K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1047
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 140V(Min)
(BR)CEO
·Good Linearity of h
FE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB817
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Recommend for 60W audio frequency amplifier output
stage a
CSC1047C Datasheet (PDF)
3.1. csc1047 bcd.pdf Size:323K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC1047
TO-92
Plastic Package
…
B
C
E
Suitable for RF Amplifier in FM/AM Radios
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION SYMBOL VALUE UNITS
VCBO
Collector Base Voltage 30 V
Collector Emitter Voltage VCEO 20 V
VEBO
Emitter Base Voltage 3 V
C
5.1. csc1061.pdf Size:154K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package CSC1061
CSC1061 NPN PLASTIC POWER TRANSISTOR
Low frequency Power Amplifier
PIN CONFIGURATION
4
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
C
DIM MIN. MAX.
E
B
F
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
1 2 3
F 3.75 3.88
G 2.29 2.79
H
5.2. csa709 csc1009.pdf Size:188K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS CSA709 PNP
CSC1009 NPN
TO-92
CBE
High Voltage Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION SYMBOL CSA709 CSC1009 UNIT
Collector -Base Voltage VCBO 160 160 V
Collector -Emitter Voltage VCEO 150 140 V
Emitter -Base Voltage VEBO 8.0 8.0
5.3. csc1008 csa708.pdf Size:217K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS CSC1008 NPN
CSA708 PNP
TO-92
CBE
Low Frequency Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 80 V
Collector -Emitter Voltage VCEO 60 V
Emitter -Base Voltage VEBO
KTD1047B Datasheet (PDF)
1.1. ktd1047b.pdf Size:365K _kec
SEMICONDUCTOR KTD1047B
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A
FEATURES
Q B
N
O K
·Complementary to KTB817B.
DIM MILLIMETERS
·Recommended for 60W Audio Frequency _
A +
15.60 0.20
_
B
4.80 + 0.20
Amplifier Output Stage.
_
C 19.90 + 0.20
_
D 2.00 0.20
+
_
d +
1.00 0.20
_
E +
3.00 0.20
_
F 3.80 + 0.20
_
G 3.50 + 0.20
D _
3.1. ktd1047.pdf Size:72K _kec
SEMICONDUCTOR KTD1047
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A Q B
K
FEATURES
Complementary to KTB817.
Recommended for 60W Audio Frequency
DIM MILLIMETERS
Amplifier Output Stage.
A 15.9 MAX
B 4.8 MAX
_
C 20.0 + 0.3
_
D 2.0 + 0.3
D
d 1.0+0.3/-0.25
E 2.0
F 1.0
MAXIMUM RATING (Ta=25 )
G 3.3 MAX
d
H 9.0
CHARACTERISTIC SYMBOL RATIN
5.1. ktc2791 ktc2878 ktc3112 ktc3120s ktc3121s ktc3148 ktc3196 ktc3197 ktc3680 ktc3881s ktc9011 ktc9016 ktc9018 ktd1069 ktd1427 ktd1554.pdf Size:495K _update_bjt
5.2. ktd1003.pdf Size:74K _kec
SEMICONDUCTOR KTD1003
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
A
C
High DC Current Gain
H
: hFE=800 3200. (VCE=5.0V, IC=300mA).
G
Wide Area of Safe Operation.
Low Collector Saturation Voltage
DIM MILLIMETERS
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
A 4.70 MAX
D _
+
D B 2.50 0.20
K C 1.70 MAX
D 0.45+0.15/-0.10
F F
E 4.25 MAX
_
+
5.3. ktd1028.pdf Size:307K _kec
SEMICONDUCTOR KTD1028
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
High DC Current Gain
: hFE=800 3200 (VCE=5.0V, IC=300mA).
Wide Area of Safe Operation.
Low Collector Saturation Voltage.
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
VCBO
Collector-Base Voltage 60 V
VCEO
Collector-Emitter Vo
2SD1047 Datasheet (PDF)
1.1. 2sd1047e.pdf Size:125K _update_bjt
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features Package Dimensions
· Capable of being mounted easily because of one-
unit:mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817/2SD1047]
· Wide ASO because of on-chip ballast re
1.2. 2sb817c 2sd1047c.pdf Size:445K _update_bjt
Ordering number : ENN6987
2SB817C/2SD1047C
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SB817C/2SD1047C
140V / 12A, AF 80W Output Applications
Features Package Dimensions
• Large current capacitance. unit : mm
• Wide ASO and high durability against breakdown. 2022A
• Adoption of MBIT process.
[2SB817C/2SD1047C]
15.6
3.2
4.8
14.0
2.0
1.3. 2sd1047p.pdf Size:30K _sanyo
Ordering number : ENN6572
2SB817P / 2SD1047P
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
Package Dimensions
Capable of being mounted easily because of one- unit : mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817P / 2S
1.4. 2sb817p 2sd1047p.pdf Size:30K _sanyo
Ordering number : ENN6572
2SB817P / 2SD1047P
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
Package Dimensions
Capable of being mounted easily because of one- unit : mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817P / 2S
1.5. 2sd1047.pdf Size:125K _sanyo
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features Package Dimensions
Capable of being mounted easily because of one-
unit:mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817/2SD1047]
Wide ASO because of on-chip ballast resista
1.6. 2sd1047e.pdf Size:206K _inchange_semiconductor
isc Product Specification
isc Silicon NPN Power Transistor 2SD1047E
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 140V(Min)
(BR)CEO
·Good Linearity of h
FE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB817E
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for audio frequency a
1.7. 2sd1047.pdf Size:218K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1047
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 140V(Min)
(BR)CEO
·Good Linearity of h
FE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB817
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Recommend for 60W audio frequency amplifier output
stage a
CSC1047D Datasheet (PDF)
3.1. csc1047 bcd.pdf Size:323K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC1047
TO-92
Plastic Package
…
B
C
E
Suitable for RF Amplifier in FM/AM Radios
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION SYMBOL VALUE UNITS
VCBO
Collector Base Voltage 30 V
Collector Emitter Voltage VCEO 20 V
VEBO
Emitter Base Voltage 3 V
C
5.1. csc1061.pdf Size:154K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package CSC1061
CSC1061 NPN PLASTIC POWER TRANSISTOR
Low frequency Power Amplifier
PIN CONFIGURATION
4
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
C
DIM MIN. MAX.
E
B
F
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
1 2 3
F 3.75 3.88
G 2.29 2.79
H
5.2. csa709 csc1009.pdf Size:188K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS CSA709 PNP
CSC1009 NPN
TO-92
CBE
High Voltage Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION SYMBOL CSA709 CSC1009 UNIT
Collector -Base Voltage VCBO 160 160 V
Collector -Emitter Voltage VCEO 150 140 V
Emitter -Base Voltage VEBO 8.0 8.0
5.3. csc1008 csa708.pdf Size:217K _cdil
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS CSC1008 NPN
CSA708 PNP
TO-92
CBE
Low Frequency Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 80 V
Collector -Emitter Voltage VCEO 60 V
Emitter -Base Voltage VEBO
2SD1047 Datasheet (PDF)
1.1. 2sd1047e.pdf Size:125K _update_bjt
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features Package Dimensions
· Capable of being mounted easily because of one-
unit:mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817/2SD1047]
· Wide ASO because of on-chip ballast re
1.2. 2sb817c 2sd1047c.pdf Size:445K _update_bjt
Ordering number : ENN6987
2SB817C/2SD1047C
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
2SB817C/2SD1047C
140V / 12A, AF 80W Output Applications
Features Package Dimensions
• Large current capacitance. unit : mm
• Wide ASO and high durability against breakdown. 2022A
• Adoption of MBIT process.
[2SB817C/2SD1047C]
15.6
3.2
4.8
14.0
2.0
1.3. 2sd1047p.pdf Size:30K _sanyo
Ordering number : ENN6572
2SB817P / 2SD1047P
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
Package Dimensions
Capable of being mounted easily because of one- unit : mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817P / 2S
1.4. 2sb817p 2sd1047p.pdf Size:30K _sanyo
Ordering number : ENN6572
2SB817P / 2SD1047P
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
Features
Package Dimensions
Capable of being mounted easily because of one- unit : mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817P / 2S
1.5. 2sd1047.pdf Size:125K _sanyo
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features Package Dimensions
Capable of being mounted easily because of one-
unit:mm
point fixing type plastic molded package (Inter-
2022A
changeable with TO-3).
[2SB817/2SD1047]
Wide ASO because of on-chip ballast resista
1.6. 2sd1047e.pdf Size:206K _inchange_semiconductor
isc Product Specification
isc Silicon NPN Power Transistor 2SD1047E
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 140V(Min)
(BR)CEO
·Good Linearity of h
FE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB817E
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for audio frequency a
1.7. 2sd1047.pdf Size:218K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1047
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 140V(Min)
(BR)CEO
·Good Linearity of h
FE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB817
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Recommend for 60W audio frequency amplifier output
stage a
