2sc2602 datasheet, equivalent, cross reference search

Содержание:

2SC6144 Datasheet (PDF)
2SC2625B Datasheet (PDF)
2SC5682 Datasheet (PDF)
Биполярный транзистор 2SC3686 — описание производителя. Основные параметры. Даташиты.
2SC3686 Datasheet (PDF)
2SC5859 Datasheet (PDF)
2SC5296 Datasheet (PDF)
2SC5858 Datasheet (PDF)
2SC5252 Datasheet (PDF)
2SC5589 Datasheet (PDF)
Биполярный транзистор 2SC5252 — описание производителя. Основные параметры. Даташиты.
2SC5252 Datasheet (PDF)

2SC6144 Datasheet (PDF)

1.1. 2sc6144.pdf Size:68K _sanyo

Ordering number : ENA1149 2SC6144
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC6144
High-Current Switching Applications
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings a

1.2. 2sc6144sg.pdf Size:292K _sanyo

2SC6144SG
Ordering number : ENA1800
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC6144SG
High-Current Switching Applications
Applications
Relay drivers, lamp drivers, motor drivers
Features
Adoption of MBIT process
Large current capacitance (IC=10A)
Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.))
High-speed switching (tf=25ns(t

4.1. 2sc6140.pdf Size:173K _update

2SC6140
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6140
○ Audio Frequency Amplifier Applications
単位: mm
• High collector voltage : VCEO = 160 V
• Small collector output capacitance : Cob = 12pF (typ.)
• High transition frequency : fT = 100MHz (typ.)
• Complementary to 2SA2220
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collec

4.2. 2sc6145a.pdf Size:226K _update

2SC6145A
Audio Amplification Transistor
Features and Benefits Description
LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced
Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer
High power handling capacity, 160 W production technology. These NPN power transistors achieve
Improved sound ou

4.3. 2sc6145.pdf Size:227K _update

2SC6145
Audio Amplification Transistor
Features and Benefits Description
LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced
Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer
High power handling capacity, 160 W production technology. These NPN power transistors achieve
Improved sound out

4.4. 2sc6142 100423.pdf Size:206K _toshiba

2SC6142
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6142
Unit: mm
0 High Voltage Switching Applications
0 Switching Regulator Applications
6.5±0.2
0 DC-DC Converter Applications
5.2±0.2 0.6 MAX.
• Excellent switching times: tf = 0.15 ?s (typ.)
1.1±0.2
0.9
• High collector breakdown voltage: VCES = 800 V, VCEO = 375 V
0.6 MAX
2.3 2.3
Absolute Maximum Rat

4.5. 2sc6145.pdf Size:192K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC6145
DESCRIPTION
·High frequency multi emitter transistor
·Small package(TO-3P)
·High power handling capacity ,160W
·Complement to Type 2SA2223
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Signal transistors for audio amplifiers
·Audio market
ABSOLUTE MAXIMUM RATIN

2SC2625B Datasheet (PDF)

C5353 транзистор характеристики

1.1. 2sc2625b.pdf Size:238K _update

RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur

3.1. 2sc2625.pdf Size:129K _mospec

A
A
A

3.2. 2sc2625.pdf Size:216K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC2625
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T =25℃

2SC5682 Datasheet (PDF)

Усилители класса d: irs20957s, irs2092s, tda8954th

1.1. 2sc5682.pdf Size:28K _sanyo

Ordering number : ENN6608A
2SC5682
NPN Triple Diffused Planar Silicon Transistor
2SC5682
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7

4.1. 2sc5684.pdf Size:126K _toshiba

4.2. 2sc5689.pdf Size:29K _sanyo

Ordering number : ENN6654A
2SC5689
NPN Triple Diffused Planar Silicon Transistor
2SC5689
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
On-chip damper diode. 16.0
3.

4.3. 2sc5681.pdf Size:28K _sanyo

Ordering number : ENN6607A
2SC5681
NPN Triple Diffused Planar Silicon Transistor
2SC5681
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed. unit : mm
High breakdown voltage(VCBO=1500V). 2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.7

4.4. 2sc5683.pdf Size:28K _sanyo

Ordering number : ENN6653A
2SC5683
NPN Triple Diffused Planar Silicon Transistor
2SC5683
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.

4.5. 2sc5680.pdf Size:28K _sanyo

Ordering number : ENN6652A
2SC5680
NPN Triple Diffused Planar Silicon Transistor
2SC5680
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
High speed.
unit : mm
High breakdown voltage(VCBO=1500V).
2174A
High reliability(Adoption of HVP process).

Adoption of MBIT process.
5.6
3.4
16.0
3.1
2.8
2.0 2.1
0.9
0.

4.6. 2sc5686.pdf Size:75K _panasonic

Power Transistors
2SC5686
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
15.50.5 3.00.3
? 3.20.1
5?
5?
Features
High breakdown voltage: VCBO ? 2 000 V
High-speed switching: tf 4.7. 2sc5689.pdf Size:214K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5689
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1500 V
CBO

Биполярный транзистор 2SC3686 — описание производителя. Основные параметры. Даташиты.

Datasheet nxp bc557

Наименование производителя: 2SC3686

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 120
W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 7
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 60

Корпус транзистора: TO218

2SC3686
Datasheet (PDF)

1.1. 2sc3686.pdf Size:92K _sanyo

Ordering number:EN1938A
NPN Triple Diffused Planar Silicon Transistor
2SC3686
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Applications Package Dimensions
Ultrahigh-definition color display horizontal deflec-
unit:mm
tion output.
2022A

Features
Fast speed (tf typ=100ns).
High breakdown voltage (VCBO=1500V).
High reliability (adoptio

1.2. 2sc3686.pdf Size:99K _jmnic

Product Specification www.jmnic.com
Silicon NPN Power Transistors 2SC3686
ESCRIPTION
·High breakdown voltage
·High reliability (adoption of HVP process).
·Fast speed
·Adoption of MBIT process.
·With TO-3PN package
APPLICATIONS
·Ultrahigh-definition color display horizontal
deflection output.
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base

1.3. 2sc3686.pdf Size:198K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC3686
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: V = 800V(Min)
CEO(SUS)
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for ultrahigh-definition color display horizontal
deflection output applications.
ABSOLUTE MAXIMUM R

Другие транзисторы… 2SC367GY
, 2SC368
, 2SC3680
, 2SC3681
, 2SC3682
, 2SC3683
, 2SC3684
, 2SC3685
, 2N3055
, 2SC3687
, 2SC3688
, 2SC3689
, 2SC369
, 2SC3690
, 2SC3691
, 2SC3692
, 2SC3693
.

2SC5859 Datasheet (PDF)

1.1. 2sc5859.pdf Size:200K _toshiba

2SC5859
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
HDTV, DIGITAL TV, PROJECTION TV
High Voltage : V = 1700 V
CBO
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (Typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 1700 V
Collector-Emi

4.1. 2sc5856.pdf Size:235K _update

2SC5856
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5856
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC S

4.2. 2sc5855.pdf Size:194K _toshiba

2SC5855
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5855
HORIZONTAL DEFLECTION OUTPUT FOR
Unit: mm
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING

4.3. 2sc5850.pdf Size:85K _renesas

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (

4.4. 2sc5855.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5855
DESCRIPTION
·High speed switching
·High voltage
·Low saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for super high resolution
·Display color TV digital TV
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

2SC5296 Datasheet (PDF)

1.1. 2sc5296.pdf Size:99K _sanyo

Ordering number:ENN5290A
NPN Triple Diffused Planar Silicon Transistor
2SC5296
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features Package Dimensions
High speed : tf=100ns typ.
unit:mm
High breakdown voltage : VCBO=1500V.
2039D
High reliability (Adoption of HVP process).

Adoption of MBIT process.
16.0
5.6
3.4
On-chip damper d

1.2. 2sc5296.pdf Size:205K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC5296
DESCRIPTION ·
·With TO-3PML package
·High breakdown voltage, high reliability.
·High speed
·Built in damper diode
APPLICATIONS
·Ultrahigh-definition CRT display
·Horizontal deflection output applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitt

1.3. 2sc5296.pdf Size:220K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5296
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for ultrahigh-definition CRT display horizontal
deflection output applicaitions
ABSOLUTE MAXIMUM RATINGS(T =

2SC5858 Datasheet (PDF)

4.1. 2sc5856.pdf Size:235K _update

4.2. 2sc5859.pdf Size:200K _toshiba

4.3. 2sc5855.pdf Size:194K _toshiba

4.4. 2sc5850.pdf Size:85K _renesas

4.5. 2sc5855.pdf Size:188K _inchange_semiconductor

2SC5252 Datasheet (PDF)

1.1. 2sc5252.pdf Size:38K _hitachi

2SC5252
Silicon NPN Triple Diffused Planar
ADE-208-391A (Z)
2nd. Edition
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf ? 0.15 sec(typ.)
Isolated package
TO3PFM
Outline
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC5252
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit

1.2. 2sc5252.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5252
DESCRIPTION
·High speed switching
High breakdown voltage
VCBO = 1500 V
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Character display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1500 V
CBO
V Collector-Emitter Vo

4.1. 2sc5255.pdf Size:180K _toshiba

2SC5255
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5255
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.2. 2sc5256ft.pdf Size:104K _toshiba

4.3. 2sc5257.pdf Size:126K _toshiba

4.4. 2sc5256.pdf Size:164K _toshiba

4.5. 2sc5259.pdf Size:182K _toshiba

4.6. 2sc5254.pdf Size:177K _toshiba

2SC5254
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5254
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.7. 2sc5258.pdf Size:103K _toshiba

4.8. 2sc5251.pdf Size:35K _hitachi

2SC5251
Silicon NPN Triple Diffused Planar
Preliminary
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf = 0.2 sec (typ)
Isolated package
TO-3PFM (N)
Outline
TO-3PFM (N)
1. Base
2. Collector
3. Emitter
1
2
3
2SC5251
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector

4.9. 2sc5250.pdf Size:71K _hitachi

Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freet

4.10. 2sc5250.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5250
DESCRIPTION
·Silicon NPN diffused planar transistor
·High speed switching
·Built-in damper diode type
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for display horizontal deflection output
Switching regulator and general purpose
AB

4.11. 2sc5259.pdf Size:1007K _kexin

SMD Type Transistors
NPN Transistors
2SC5259
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=15mA
1 2
● Collector Emitter Voltage VCEO=7V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

4.12. 2sc5254.pdf Size:1019K _kexin

SMD Type Transistors
NPN Transistors
2SC5254
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=40mA
● Collector Emitter Voltage VCEO=7V
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

2SC5589 Datasheet (PDF)

1.1. 2sc5589.pdf Size:298K _toshiba

2SC5589
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5589
HORIZONTAL DEFLECTION OUTPUT FOR
HIGH RESOLUTION DISPLAY, COLOR TV
Unit: mm
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Co

4.1. 2sc5588.pdf Size:331K _toshiba

2SC5588
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5588
Unit: mm
HORIZONTAL DEFLECTION OUTPUT FOR SUPER
HIGH RESOLUTION DISPLAY
COLOR TV FOR DIGITAL TV & HDTV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1700 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTER

4.2. 2sc5587.pdf Size:332K _toshiba

2SC5587
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5587
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
Unit: mm
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT

4.3. 2sc5585 2sc5663.pdf Size:68K _rohm

2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
External dimensions (Unit : mm)
Applications
For switching
2SC5585
For muting
(1)
(2)
(3)
0.8
Features
1.6
1) High current.
2) Low VCE(sat).
0.1Min.
(1) Emitter
R

4.4. 2sc5584.pdf Size:45K _panasonic

Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

4.5. 2sc5580.pdf Size:43K _panasonic

Transistors
2SC5580
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency oscillation / switching
0.3+0.1 0.15+0.10
0.05
0.0
3
Features
High transition frequency fT
S-mini type package, allowing downsizing of the equipment and
1 2
automatic insertion through the tape packing and the magazine
(0.65) (0.65)
packing.
1.30.1
2.00.2
10
Absolute Maximum Ratings Ta =

4.6. 2sc5583.pdf Size:46K _panasonic

Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

4.7. 2sc5585.pdf Size:198K _secos

2SC5585
0.5A , 15V
NPN Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
SOT-523
FEATURES
High Current.
Low VCE(sat). VCE(sat)?0.25V (@IC=200mA / IB=10mA)
A
Complement of 2SC4738. M
3
3
Top View C B
Application
1
1 2
General Purpose Amplification.
L 2
K
E
MARKING
D
H J

4.8. 2sc5586 2sc5830 2sc5924.pdf Size:1332K _sanken-ele

4.9. 2sc5584.pdf Size:186K _inchange_semiconductor

isc Product Specification
isc Silicon NPN Power Transistor 2SC5584
DESCRIPTION
·Silicon NPN triple diffusion mesa type
·High Switching Speed
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.10. 2sc5585.pdf Size:204K _lge

2SC5585
SOT-523 Transistor(NPN)
1. BASE
SOT-523
2. EMITTER
3. COLLECTOR
Features

High current.

Low VCE(sat). VCE(sat)?250mV at IC = 200mA / IB = 10mA
MARKING: BX
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Vol

4.11. 2sc5585.pdf Size:192K _wietron

2SC5585
NPN TRANSISTOR
3
P b Lead(Pb)-Free
1
2
FEATURES:
SOT-523(SC-75)
* High current.
* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA
MAXIMUM RATINGS (TA=25°Cunless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current –Continuous IC 500 mA
Collector Dissipatio

Биполярный транзистор 2SC5252 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5252