C5353 транзистор характеристики

KTC3198 Datasheet (PDF)

1.1. ktc3198.pdf Size:244K _secos

KTC3198
0.15A , 60V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
TO-92
V(BR)CBO=60V
CLASSIFICATION OF hFE (1)
Product-Rank KTC3198-O KTC3198-Y KTC3198-GR
Range 70~140 120~240 200~400
1Emitter
Collector
2Base
3
3Collector
Millimeter Millimeter
2
REF. REF.
Min

1.2. ktc3198a.pdf Size:66K _kec

SEMICONDUCTOR KTC3198A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
·Excellent hFE Linearity
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
N DIM MILLIMETERS
A 4.70 MAX
·Low Noise : NF=1dB(Typ.). at f=1kHz. E
K
B 4.80 MAX
G
·Complementary to KTA1266A.
C 3.70 MAX
D
D 0.45
E

 1.3. ktc3198.pdf Size:432K _kec

SEMICONDUCTOR KTC3198
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
N DIM MILLIMETERS
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
A 4.70 MAX
E
K
B 4.80 MAX
Low Noise : NF=1dB(Typ.). at f=1kHz. G
C 3.70 MAX
D
Complementary to KTA1266.
D 0.45
E 1.00
F

1.4. ktc3198l.pdf Size:29K _kec

SEMICONDUCTOR KTC3198L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
B C
FEATURES
Excellent hFE Linearity
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
N DIM MILLIMETERS
Low Noise : NF=0.2dB(Typ.). f=(1kHz).
A 4.70 MAX
E
K
B 4.80 MAX
Complementary to KTA1266L. (O,Y,GR class) G
C 3.70 MAX
D
D 0.45
E 1.00
F 1.2

 1.5. ktc3198.pdf Size:1736K _kexin

DIP Type Transistors
NPN Transistors
KTC3198
Unit:mm
TO-92
4.8 ± 0.3 3.8 ± 0.3
■ Features
● Excellent hFE Linearity
● Low Noise
0.60 Max
● Complementary to KTA1266
0.45 ± 0.1 0.5
2
1 3
1.Emitter
2.Collector
1.27
2.54 3.Base
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Collector — Emitter Voltage VCEO 5

2SC5353B Datasheet (PDF)

1.1. 2sc5353b.pdf Size:251K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC5353B NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
1 1
TRANSISTOR
TO-126
TO-126C
DESCRIPTION
1
1
TO-220 TO-220F
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications.
1
1
FEATURES
TO-220F1 TO-251
* Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX)
* High collectors breakdown voltage:

3.1. 2sc5353.pdf Size:207K _toshiba



3.2. 2sc5353.pdf Size:271K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC5353 NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
TRANSISTOR
1
1
TO-126 TO-126C
DESCRIPTION
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications 1
1
TO-220 TO-220F
FEATURES
* Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX)
* High collectors breakdown voltage: VCEO = 700V
1
TO-220F1

 3.3. 2sc5353.pdf Size:208K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5353
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: V = 800V(Min.)
CEO(SUS)
·Low Collector Saturation Voltage
: V =1V(Max) @ I = 1.2A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in lighting applications and low cost
switch-mode power

2SC5583 Datasheet (PDF)

1.1. 2sc5583.pdf Size:46K _panasonic

Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

4.1. 2sc5588.pdf Size:331K _toshiba

2SC5588
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5588
Unit: mm
HORIZONTAL DEFLECTION OUTPUT FOR SUPER
HIGH RESOLUTION DISPLAY
COLOR TV FOR DIGITAL TV & HDTV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1700 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTER

4.2. 2sc5587.pdf Size:332K _toshiba

2SC5587
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5587
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
Unit: mm
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT

 4.3. 2sc5589.pdf Size:298K _toshiba

2SC5589
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5589
HORIZONTAL DEFLECTION OUTPUT FOR
HIGH RESOLUTION DISPLAY, COLOR TV
Unit: mm
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Co

4.4. 2sc5585 2sc5663.pdf Size:68K _rohm

2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
External dimensions (Unit : mm)
Applications
For switching
2SC5585
For muting
(1)
(2)
(3)
0.8
Features
1.6
1) High current.
2) Low VCE(sat).
0.1Min.
(1) Emitter
R

 4.5. 2sc5584.pdf Size:45K _panasonic

Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

4.6. 2sc5580.pdf Size:43K _panasonic

Transistors
2SC5580
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency oscillation / switching
0.3+0.1 0.15+0.10
0.05
0.0
3
Features
High transition frequency fT
S-mini type package, allowing downsizing of the equipment and
1 2
automatic insertion through the tape packing and the magazine
(0.65) (0.65)
packing.
1.30.1
2.00.2
10
Absolute Maximum Ratings Ta =

4.7. 2sc5585.pdf Size:198K _secos

2SC5585
0.5A , 15V
NPN Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
SOT-523
FEATURES
High Current.
Low VCE(sat). VCE(sat)?0.25V (@IC=200mA / IB=10mA)
A
Complement of 2SC4738. M
3
3
Top View C B
Application
1
1 2
General Purpose Amplification.
L 2
K
E
MARKING
D
H J

4.8. 2sc5586 2sc5830 2sc5924.pdf Size:1332K _sanken-ele

4.9. 2sc5584.pdf Size:186K _inchange_semiconductor

isc Product Specification
isc Silicon NPN Power Transistor 2SC5584
DESCRIPTION
·Silicon NPN triple diffusion mesa type
·High Switching Speed
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.10. 2sc5585.pdf Size:204K _lge

2SC5585
SOT-523 Transistor(NPN)
1. BASE
SOT-523
2. EMITTER
3. COLLECTOR
Features

High current.

Low VCE(sat). VCE(sat)?250mV at IC = 200mA / IB = 10mA
MARKING: BX
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Vol

4.11. 2sc5585.pdf Size:192K _wietron

2SC5585
NPN TRANSISTOR
3
P b Lead(Pb)-Free
1
2
FEATURES:
SOT-523(SC-75)
* High current.
* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA
MAXIMUM RATINGS (TA=25°Cunless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current –Continuous IC 500 mA
Collector Dissipatio

C5344 Datasheet (PDF)

1.1. c5344.pdf Size:204K _upd

SUNROC
2SC5344 TRANSISTOR (NPN)
FEATURES
Audio power amplifier application
TO-92
High hFE : hFE=100~320
1. EMITTER
Complementary to 2SA1981
2. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
3. BASE
1 2 3
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector C

1.2. 2sc5344s.pdf Size:279K _auk

 2SC5344S
NPN Silicon Transistor
Description
• Audio power amplifier application
PIN Connection
Features
• High hFE : hFE=100~320
• Complementary pair with 2SA1981S
C
B
Ordering Information
Type No. Marking Package Code E
SOT-23
FA □ □
2SC5344S SOT-23
① ② ③
①Device Code ② hFE Rank ③ Year&Week Code
Absolute maximum ratings (Ta=25°C)
Char

 1.3. 2sc5344u.pdf Size:256K _auk


2SC5344U
NPN Silicon Transistor
Description
PIN Connection
• Audio power amplifier application
Features
3
• High hFE : hFE=100~320
• Complementary pair with 2SA1981U 1
2
Ordering Information
SOT-323
Type NO. Marking Package Code
F □ □
2SC5344U SOT-323
① ② ③
①Device Code ②hFE Rank ③Year&Week Code
Absolute maximum ratings (Ta=25°C)

1.4. 2sc5344.pdf Size:218K _auk

 2SC5344
NPN Silicon Transistor
Description
PIN Connection
• Audio power amplifier application
C
B
Features
• High hFE : hFE=100~320
E
• Complementary pair with 2SA1981
TO-92
Ordering Information
Type NO. Marking Package Code
2SC5344 C5344 TO-92
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 35 V
Collect

 1.5. 2sc5344.pdf Size:292K _secos

2SC5344
0.8A , 35V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Audio power amplifier application
A
High hFE=100~320
L
3
Complementary to 2SA1981
3
Top View C B
1
1 2
2
K E
CLASSIFICATION OF hFE(1)
D
Product-Rank 2SC5344-O 2SC5344-Y
H J
F G
Range 100~20

1.6. 2sc5344.pdf Size:193K _lge

2SC5344(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
Audio power amplifier application
High hFE : hFE=100~320

Complementary to 2SA1981
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-B

1.7. 2sc5344.pdf Size:715K _wietron

2SC5344
NPN General Purpose Transistors
3
P b Lead(Pb)-Free
1
2
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Symbol Value Unit
Collector-Emitter Voltage
30
VCEO
V
VCBO
Collector-Base Voltage 35 V
VEBO
Emitter-Base Voltage 5.0 V
IC
Collector Current — Continuous 800 mA
Total Device Dissipation
PD
200 mW
TA=25°C
Tj °C
Junction Temperature +150
Tstg
Storage Temperature -55 to +

1.8. 2sc5344sf.pdf Size:882K _kexin

SMD Type Transistors
NPN Transistors
2SC5344SF
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● High hFE : hFE=100~320
● Complementary pair with 2SA1981SF
1 2
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 35
Collector — Emitter

2SC5057 Datasheet (PDF)

4.1. 2sc5052.pdf Size:118K _toshiba



4.2. 2sa1900 2sc5053.pdf Size:47K _rohm

2SA1900
Transistors
Transistors
2SC5053
(96-115-B352)
(96-196-D352)
297
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only.

 4.3. 2sc5050.pdf Size:24K _hitachi

2SC5050
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 11 GHz Typ
• High gain, low noise figure
PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC5050
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collect

4.4. 2sc5051.pdf Size:24K _hitachi

2SC5051
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 11 GHz Typ
• High gain, low noise figure
PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC5051
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collec

 4.5. 2sc5053.pdf Size:873K _kexin

SMD Type Transistors
NPN Transistors
2SC5053
SOT-89
Unit:mm
1.70 0.1
■ Features
● Collector Current Capability IC=2A
● Collector Emitter Voltage VCEO=50V
● Complementary to 2SA1900
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Collector — Emitter Voltage VCEO 50

4.6. 2sc5050.pdf Size:348K _kexin

SMD Type Transistors
NPN Transistors
2SC5050
SOT-23
Unit: mm
2.9+0.1
-0.1
+0.1
0.4-0.1
3
■ Features
● Collector Current Capability IC=50mA
1 2
● Collector Emitter Voltage VCEO=8V
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collect

4.7. 2sc5051.pdf Size:349K _kexin

SMD Type Transistors
NPN Transistors
2SC5051
■ Features
● Collector Current Capability IC=50mA
● Collector Emitter Voltage VCEO=8V
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collector — Emitter Voltage VCEO 8 V
Emitter — Base Voltage VEBO 1.5
Collector Current — Continuous IC 50 mA