D2058 транзистор характеристики

2SD2583 Datasheet (PDF)

1.1. 2sd2583.pdf Size:47K _nec

DATA SHEET
SILICON TRANSISTOR
2SD2583
AUDIO FREQUENCY AMPLIFIER, SWITCHING
NOPN SILICON EPITAXIAL TRANSISTORS
FEATURES
PACKAGE DIMENSIONS
Low VCE(sat)
in millimeters (inches)
VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA)
High DC Current Gain
8.5 MAX. 2.8 MAX.
(0.334 MAX.) (0.110 MAX.)
hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)
? 3.2 0.2 (? 0.126)
ABSOLUTE MAXIMUM RATINGS
Maxi

1.2. 2sd2583.pdf Size:207K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2583
DESCRIPTION
·High Collector Current-I = 5A
C
·Low Saturation Voltage —
: V = 0.15V(Max)@ I =1A, I = 50mA
CE(sat) C B
·High DC Current Gain-
: h = 150~600@ I = 1A
FE C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency amplifier and switching
applications.
ABSO

 1.3. 2sd2583.pdf Size:461K _blue-rocket-elect

2SD2583(BR3DA2583QF)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package.
特征 / Features
饱和压降低；直流电增益高。
Low saturation voltage, high DC current gain.
用途 / Applications
用于音频放大及开关电路。
Audio frequency amplifier and switching applica

2SD2599 Datasheet (PDF)

1.1. 2sd2599.pdf Size:250K _toshiba

2SD2599
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD2599
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
Unit: mm
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 8 V (Max.)
CE (sat)
High Speed : t = 0.5 µs (Typ.)
f
Bult-in Damper Type
Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL

1.2. 2sd2599.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2599
DESCRIPTION
·High Breakdown Voltage-
: V = 1500V (Min)
CBO
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE

 4.1. 2sd2598 e.pdf Size:59K _panasonic

Transistor
2SD2598
Unit: mm
Silicon NPN epitaxial planer type
2.5 0.1
1.05
darlington
6.9 0.1 0.05 (1.45)
0.7 4.0 0.8
For low-frequency amplification
0.65 max.
Features
Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: hFE
+0.1
0.450.05
= 4000 to 20000.
2.5 0.5 2.5 0.5
A shunt resistor is omit

4.2. 2sd2598.pdf Size:54K _panasonic

Transistor
2SD2598
Unit: mm
Silicon NPN epitaxial planer type
2.5 0.1
1.05
darlington
6.9 0.1 0.05 (1.45)
0.7 4.0 0.8
For low-frequency amplification
0.65 max.
Features
Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: hFE
+0.1
0.450.05
= 4000 to 20000.
2.5 0.5 2.5 0.5
A shunt resistor is omit

 4.3. 2sd2593.pdf Size:208K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2593
DESCRIPTION
·Low Collector Saturation Voltage-
: V = 1.2 (Max)@ I = 3A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 60 V
CBO
V Collector-Emitter Voltage 60

2SD2058Y Datasheet (PDF)

1.1. 2sd2058g 2sd2058o 2sd2058y.pdf Size:290K _update_bjt

www.DataSheet4U.com
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2058
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1366
·Low collector saturation voltage:
VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A
·Collector power dissipation:
PC=25W(TC=25ı)
APPLICATIONS
·With general purpose applications
PINNING
PIN DESCRIPTION
1 Base
2 Co

3.1. 2sc3882s 2sc4368 2sc4369 2sc4371 2sc4377 2sd1351a 2sd2058a bf599 bfq31 bfs20 bu508a bu806 buv48a buv48c kta1242 kta940.pdf Size:495K _update_bjt



3.2. 2sd2058.pdf Size:194K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2058
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 60V (Min)
(BR)CEO
·Collector Power Dissipation
: P = 25 W(Max)
C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNI

2SD2375 Datasheet (PDF)

1.1. 2sd2375.pdf Size:80K _panasonic

Power Transistors
2SD2375
Silicon NPN triple diffusion planar type
Unit: mm
4.60.2
For power amplification with high forward current transfer ratio 9.90.3
2.90.2
? 3.20.1
Features
High forward current transfer ratio hFE which has satisfactory lin-
earity
Full-pack package which can be installed to the heat sink with one
screw
1.40.2
2.60.1
1.60.2
0.80.1 0.550.15
A

4.1. 2sd2374.pdf Size:45K _panasonic

Power Transistors
2SD2374, 2SD2374A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1548 and 2SB1548A
Unit: mm
Features
High forward current transfer ratio hFE which has satisfactory linearity
4.6 0.2
9.9 0.3
Low collector to emitter saturation voltage VCE(sat)
2.9 0.2
Full-pack package which can be installed to the heat sink with
one screw
?

4.2. 2sd2374a.pdf Size:199K _inchange_semiconductor

\
isc Silicon NPN Power Transistor 2SD2374A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 80V(Min)
(BR)CEO
·Collector Power Dissipation-
: P = 25 W@ T = 25℃
C C
·Low Collector Saturation Voltage-
: V = 1.2V(Max)@ (I = 3A, I = 0.375A)
CE(sat) C B
·Complement to Type 2SB1548A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLIC

 4.3. 2sd2374 2sd2374a.pdf Size:115K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD2374 2SD2374A
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1548/1548A
·Low collector saturation voltage
·High forward current transfer ratio hFE
which has satisfactory linearity
APPLICATIONS
·For power amplifications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
Fig.1 simplified

4.4. 2sd2374.pdf Size:199K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD2374
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 60V(Min)
(BR)CEO
·Collector Power Dissipation-
: P = 25 W@ T = 25℃
C C
·Low Collector Saturation Voltage-
: V = 1.2V(Max)@ (I = 3A, I = 0.375A)
CE(sat) C B
·Complement to Type 2SB1548
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION

 4.5. 2sd237.pdf Size:181K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SD237
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a

BUL6823 Datasheet (PDF)

1.1. bul6823a.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6823A
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6823A

1.2. bul6823.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6823
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6823
N

 4.1. bul6825.pdf Size:84K _jmnic

Product Specification www.jmnic.com
Silicon Power Transistors BUL6825
DESCRIPTION ·
·High voltage ,high speed
·With TO-220C package
APPLICATIONS
·Relay drivers
·Inverters
·Switching regulators
·Deflection circuits
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 emitter
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Colle

4.2. bul6825.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor BUL6825
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: V = 400V(Min.)
CEO(SUS)
·Low Collector Saturation Voltage
: V = 0.5V(Max) @ I = 1A
CE(sat) C
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in relay drivers ,inverters ,s

 4.3. bul6821.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6821
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6821
N

4.4. bul6822a.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6822A
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6822A

 4.5. bul6822.pdf Size:312K _sisemi

深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
NPN BUL / BUL SERIES TRANSISTORS BUL6822
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS BUL6822
N

Биполярный транзистор SD1446 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: SD1446

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 183
W

Макcимально допустимое напряжение коллектор-база (Ucb): 36
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 3.5
V

Макcимальный постоянный ток коллектора (Ic): 12
A

Предельная температура PN-перехода (Tj): 175
°C

Граничная частота коэффициента передачи тока (ft): 50
MHz

Ёмкость коллекторного перехода (Cc): 300
pf

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: M113

SD1446
Datasheet (PDF)

1.1. sd1446.pdf Size:276K _update

HG RF POWER TRANSISTOR
SD1446
Semiconductors
HG
ROHS Compliance,Silicon NPN POWER TRANSISTOR
D
DESCRIPTION
1.Collector
A
2.EMITTER
F
The SD1446 is a 12.5 V Class C epitaxial
3.BASE
q
C
silicon NPN planar transistor designed primarily
4.EMITTER
U1 B
5.FIN
for land mobile transmitter applications. This
device utilizes emitter ballasting and is
w2 M C
c
extremely stable and

1.2. sd1446.pdf Size:386K _st

SD1446
RF POWER BIPOLAR TRANSISTORS
UHF MOBILE APPLICATIONS
FEATURES SUMMARY Figure 1. Package
50 MHz
12.5 VOLTS
EFFICIENCY 55%
COMMON EMITTER
GOLD METALLIZATION
POUT = 70 W MIN. WITH 10 dB GAIN
DESCRIPTION
.380 4L FL (M113)
The SD1446 is a 12.5 V Class C epitaxial silicon
epoxy sealed
NPN planar transistor designed primarily for land
mobile transmitter applications

 1.3. 2sd1446.pdf Size:63K _panasonic

Power Transistors
2SD1446
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
10.0 0.2 4.2 0.2
5.5 0.2 2.7 0.2
Features
? 3.1 0.1
High foward current transfer ratio hFE
High collector to base voltage VCBO
Full-pack package which can be installed to the heat sink with
one screw
1.3 0.2
1.4 0.1
+0.2
Absolute Maximum Ratings (TC=25?C) 0.5 0.1

1.4. 2sd1446.pdf Size:202K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1446
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
· Low Collector-Emitter Saturation Voltage-
: V = 1.5V(Max) @I = 3A
CE(sat) C
·High DC Current Gain
: h = 500(Min) @ I = 2A, V = 2V
FE C CE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance

 1.5. sd1446.pdf Size:276K _hgsemi

HG RF POWER TRANSISTOR
SD1446
Semiconductors
HG
ROHS Compliance,Silicon NPN POWER TRANSISTOR
D
DESCRIPTION
1.Collector
A
2.EMITTER
F
The SD1446 is a 12.5 V Class C epitaxial
3.BASE
q
C
silicon NPN planar transistor designed primarily
4.EMITTER
U1 B
5.FIN
for land mobile transmitter applications. This
device utilizes emitter ballasting and is
w2 M C
c
extremely stable and

Другие транзисторы… SD1285
, SD1405
, SD1407
, SD1420
, SD1422
, SD1429
, SD1434
, SD1439
, BC546
, SD1448
, SD1455
, SD1458
, SD1459
, SD1460
, SD1462
, SD1480
, SD1487
.

Биполярный транзистор KTD2059 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: KTD2059

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30
W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V

Макcимальный постоянный ток коллектора (Ic): 5
A

Предельная температура PN-перехода (Tj): 175
°C

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: ISO220

KTD2059
Datasheet (PDF)

1.1. ktd2059.pdf Size:441K _kec

SEMICONDUCTOR KTD2059
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
A
C
FEATURES
DIM MILLIMETERS
S
Complementary to KTB1367.
_
A 10.0 0.3
+
_
+
B 15.0 0.3
E
C _
2.70 0.3
+
D 0.76+0.09/-0.05
_
E Φ3.2 0.2
+
_
F 3.0 0.3
+
_
12.0 0.3
G +
MAXIMUM RATING (Ta=25 )
H 0.5+0.1/-0.05
_
+
J 13.6 0.5
L L
CHARACTERISTIC SYMBOL RATING UNIT
R

1.2. ktd2059.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor KTD2059
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 100V(Min)
(BR)CEO
·Collector Power Dissipation-
: P = 30W@ T = 25℃
C C
·Low Collector Saturation Voltage-
: V = 2.0V(Max)@ (I = 4A, I = 0.4A)
CE(sat) C B
·Complement to Type KTB1367
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS

 4.1. ktd2058.pdf Size:40K _kec

SEMICONDUCTOR KTD2058
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
A
C
FEATURES
DIM MILLIMETERS
S
·Low Saturation Voltage
_
A 10.0 0.3
+
_
+
B 15.0 0.3
E
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.
C _
2.70 0.3
+
D 0.76+0.09/-0.05
·Complementary to KTB1366.
_
E Φ3.2 0.2
+
_
F 3.0 0.3
+
_
12.0 0.3
G +
H 0.5+0.1/-0.05
_
+
J 13.6 0.5

4.2. ktd2058.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor KTD2058
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 60V(Min.)
(BR)CEO
·Collector Power Dissipation
: P = 25 W@ T = 25℃
C C
·Low Collector Saturation Voltage-
: V = -1.0V(Max)@ (I = -2A, I = -0.2A)
CE(sat) C B
·Complement to Type KTB1366
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIO

 4.3. ktd2058.pdf Size:198K _lge

KTD2058(NPN)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOTR
3. EMITTER
3
2
1
Features

Low Collector Saturation Voltage
: VCE(SAT) = 1. 0V(MAX) .
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 7 V
IC C

Другие транзисторы… KTD1304
, KTD1351
, KTD1352
, KTD1413
, KTD1414
, KTD1415
, KTD1937
, KTD2058
, BC549
, KTD2060
, KTD2061
, KTD2066
, KTD2092
, KTD2424
, KTD3055
, KTD525
, KTD686
.

SD1446 Datasheet (PDF)

1.1. sd1446.pdf Size:276K _update

HG RF POWER TRANSISTOR
SD1446
Semiconductors
HG
ROHS Compliance,Silicon NPN POWER TRANSISTOR
D
DESCRIPTION
1.Collector
A
2.EMITTER
F
The SD1446 is a 12.5 V Class C epitaxial
3.BASE
q
C
silicon NPN planar transistor designed primarily
4.EMITTER
U1 B
5.FIN
for land mobile transmitter applications. This
device utilizes emitter ballasting and is
w2 M C
c
extremely stable and

1.2. sd1446.pdf Size:386K _st

SD1446
RF POWER BIPOLAR TRANSISTORS
UHF MOBILE APPLICATIONS
FEATURES SUMMARY Figure 1. Package
50 MHz
12.5 VOLTS
EFFICIENCY 55%
COMMON EMITTER
GOLD METALLIZATION
POUT = 70 W MIN. WITH 10 dB GAIN
DESCRIPTION
.380 4L FL (M113)
The SD1446 is a 12.5 V Class C epitaxial silicon
epoxy sealed
NPN planar transistor designed primarily for land
mobile transmitter applications

 1.3. 2sd1446.pdf Size:63K _panasonic

Power Transistors
2SD1446
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
10.0 0.2 4.2 0.2
5.5 0.2 2.7 0.2
Features
? 3.1 0.1
High foward current transfer ratio hFE
High collector to base voltage VCBO
Full-pack package which can be installed to the heat sink with
one screw
1.3 0.2
1.4 0.1
+0.2
Absolute Maximum Ratings (TC=25?C) 0.5 0.1

1.4. 2sd1446.pdf Size:202K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1446
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V = 400V(Min)
(BR)CEO
· Low Collector-Emitter Saturation Voltage-
: V = 1.5V(Max) @I = 3A
CE(sat) C
·High DC Current Gain
: h = 500(Min) @ I = 2A, V = 2V
FE C CE
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance

 1.5. sd1446.pdf Size:276K _hgsemi

HG RF POWER TRANSISTOR
SD1446
Semiconductors
HG
ROHS Compliance,Silicon NPN POWER TRANSISTOR
D
DESCRIPTION
1.Collector
A
2.EMITTER
F
The SD1446 is a 12.5 V Class C epitaxial
3.BASE
q
C
silicon NPN planar transistor designed primarily
4.EMITTER
U1 B
5.FIN
for land mobile transmitter applications. This
device utilizes emitter ballasting and is
w2 M C
c
extremely stable and

2SD2478 Datasheet (PDF)

1.1. 2sd2478.pdf Size:39K _rohm

2SB1616
Transistors
Transistors
2SD2478
(SPEC-B426)
(94L-1129-D426)
301

4.1. 2sd2474.pdf Size:133K _update

SMD Type Transistors
SMD Type Transistors
SMD Type Transistors
SMD Type Transistors
SMD Type Transistors
SMD Type Transistors
SMD Type Transistors
SMD Type Transistors
Product specification
2SD2474
Features
Low collector to emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga

4.2. 2sd2474 e.pdf Size:39K _panasonic

Transistor
2SD2474
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
Complementary to 2SB1612
1.5 0.1
4.5 0.1
1.6 0.2
Features
Low collector to emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment
45
and automatic insertion through the tape packing and the maga-
zine packing.
0.4 0.08
0.4 0.04
0.5 0.08

 4.3. 2sd2479.pdf Size:82K _panasonic

Power Transistors
2SD2479
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency amplification
7.50.2 4.50.2
Features
High forward current transfer ratio hFE
0.650.1 0.850.1
Allowing supply with the radial taping 0.8 C 0.8 C
1.00.1
0.70.1
0.70.1
1.150.2
Absolute Maximum Ratings Ta = 25C
1.150.2
Parameter Symbol Rating Unit
0.50.1 0.40.1
Collector-base vo

4.4. 2sd2470.pdf Size:130K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SD2470 NPN SILICON TRANSISTOR
STROBO AND DC/DC
CONVERTERS
? FEATURES
* Low saturation voltage
V= 0.25V(typ) at IC/IB= 3A/0.1A
1
* Collector current of 5A is possible
TO-92SP
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SD2470L-x-T9S-B 2SD2470G-x-T9S-B TO-92SP E C B Tape Box
2SD2470L-x-

 4.5. 2sd2470.pdf Size:229K _lge

2SD2470
TO-92S Transistor (NPN)
1. EMITTER
TO-92S
2. COLLECTOR
3. BASE
1 2 3
Features
Low saturation voltage VCE(sat):0.5V
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 15 V
VCEO Collector-Emitter Voltage 10 V
VEBO Emitter-Base Voltage 8 V
IC Collector Current –Continuous 5 A
PC Collector Power Dissipa

KTD2059 Datasheet (PDF)

1.1. ktd2059.pdf Size:441K _kec

SEMICONDUCTOR KTD2059
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
A
C
FEATURES
DIM MILLIMETERS
S
Complementary to KTB1367.
_
A 10.0 0.3
+
_
+
B 15.0 0.3
E
C _
2.70 0.3
+
D 0.76+0.09/-0.05
_
E Φ3.2 0.2
+
_
F 3.0 0.3
+
_
12.0 0.3
G +
MAXIMUM RATING (Ta=25 )
H 0.5+0.1/-0.05
_
+
J 13.6 0.5
L L
CHARACTERISTIC SYMBOL RATING UNIT
R

1.2. ktd2059.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor KTD2059
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 100V(Min)
(BR)CEO
·Collector Power Dissipation-
: P = 30W@ T = 25℃
C C
·Low Collector Saturation Voltage-
: V = 2.0V(Max)@ (I = 4A, I = 0.4A)
CE(sat) C B
·Complement to Type KTB1367
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS

 4.1. ktd2058.pdf Size:40K _kec

SEMICONDUCTOR KTD2058
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
A
C
FEATURES
DIM MILLIMETERS
S
·Low Saturation Voltage
_
A 10.0 0.3
+
_
+
B 15.0 0.3
E
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.
C _
2.70 0.3
+
D 0.76+0.09/-0.05
·Complementary to KTB1366.
_
E Φ3.2 0.2
+
_
F 3.0 0.3
+
_
12.0 0.3
G +
H 0.5+0.1/-0.05
_
+
J 13.6 0.5

4.2. ktd2058.pdf Size:215K _inchange_semiconductor

isc Silicon NPN Power Transistor KTD2058
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 60V(Min.)
(BR)CEO
·Collector Power Dissipation
: P = 25 W@ T = 25℃
C C
·Low Collector Saturation Voltage-
: V = -1.0V(Max)@ (I = -2A, I = -0.2A)
CE(sat) C B
·Complement to Type KTB1366
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIO

 4.3. ktd2058.pdf Size:198K _lge

KTD2058(NPN)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOTR
3. EMITTER
3
2
1
Features

Low Collector Saturation Voltage
: VCE(SAT) = 1. 0V(MAX) .
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 7 V
IC C