C5027 характеристики на русском

Содержание:

2SC5353 Datasheet (PDF)
2SC5048 Datasheet (PDF)
KSC5030F Datasheet (PDF)
KSC5027R Datasheet (PDF)
Биполярный транзистор 2SC5253 — описание производителя. Основные параметры. Даташиты.
2SC5253 Datasheet (PDF)
2SC5253 Datasheet (PDF)
2SC5587 Datasheet (PDF)
KSC5027 Datasheet (PDF)
2SC5027E Datasheet (PDF)
2SC5027R Datasheet (PDF)
2SC5003 Datasheet (PDF)
KSC5027F Datasheet (PDF)
BU5027S Datasheet (PDF)
Биполярный транзистор BU5027AF — описание производителя. Основные параметры. Даташиты.
BU5027AF Datasheet (PDF)
KSC5027 Datasheet (PDF)
Биполярный транзистор 2SC5057 — описание производителя. Основные параметры. Даташиты.
2SC5057 Datasheet (PDF)
BU5027A Datasheet (PDF)

2SC5353 Datasheet (PDF)

1.1. 2sc5353.pdf Size:207K _toshiba

1.2. 2sc5353.pdf Size:271K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC5353 NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
TRANSISTOR
1
1
TO-126 TO-126C
DESCRIPTION
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications 1
1
TO-220 TO-220F
FEATURES
* Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX)
* High collectors breakdown voltage: VCEO = 700V
1
TO-220F1

1.3. 2sc5353b.pdf Size:251K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC5353B NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
1 1
TRANSISTOR
TO-126
TO-126C
DESCRIPTION
1
1
TO-220 TO-220F
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications.
1
1
FEATURES
TO-220F1 TO-251
* Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX)
* High collectors breakdown voltage:

1.4. 2sc5353.pdf Size:208K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5353
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: V = 800V(Min.)
CEO(SUS)
·Low Collector Saturation Voltage
: V =1V(Max) @ I = 1.2A
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in lighting applications and low cost
switch-mode power

2SC5048 Datasheet (PDF)

C5353 транзистор характеристики

1.1. 2sc5048.pdf Size:209K _toshiba

1.2. 2sc5048.pdf Size:42K _jmnic

Product Specification www.jmnic.com
Silicon NPN Power Transistors 2SC5048
DESCRIPTION
·With TO-3P(H)IS package
·High speed
·High voltage
·Low saturation voltage
·Collector metal (fin) is fully covered
with mold resin
APPLICATIONS
·Horizontal deflection output for high
resolution display,colorTV
·High speed switching applications
PINNING
PIN DESCRIPTION
1 Base

1.3. 2sc5048.pdf Size:153K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5048
DESCRIPTION
·With TO-3P(H)IS package
·High speed
·High voltage
·Low saturation voltage
APPLICATIONS
·Horizontal deflection output for high
resolution display,colorTV
·High speed switching applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
Fig.1 simplified outline (TO-3P(H)IS

KSC5030F Datasheet (PDF)

E13007 транзистор характеристики аналог

1.1. ksc5030f.pdf Size:142K _fairchild_semi

KSC5030F
High Voltage Fast Switching Transistor
Features
• Fast Speed Switching
• Wide Safe Operating Area
TO-3PF
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol Parameter Value Units
VCBO Collector-Base Voltage 1100 V
VCEO Collector-Emitter Voltage 800 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current (DC) 6 A
ICP * Collector Current (Pulse) 20 A
PC Collect

1.2. ksc5030f.pdf Size:116K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSC5030F
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO Col

3.1. ksc5030pwd.pdf Size:24K _samsung

KSC5030 NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILTY
TO-3P
HIGH SPEED SWITCHING
WIDE SOA
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector- Base Voltage VCBO 1100 V
Collector- Emitter Voltage VCEO 800 V
Emitter- Base Voltage VEBO 7 V
Collector Current (DC) IC 6 A
Collector Current (Pulse) IC 20 A
Base Current IB 3 A
Collector Dissipation (TC=25 ) P

KSC5027R Datasheet (PDF)

Характеристики транзистора 2n5551

3.1. ksc5027.pdf Size:53K _fairchild_semi

KSC5027
High Voltage and High Reliability
• High Speed Switching
• Wide SOA
TO-220
1
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 1100 V
VCEO Collector-Emitter Voltage 800 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current (DC) 3 A
ICP Collector Curre

3.2. ksc5027.pdf Size:24K _samsung

KSC5027 NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY
TO-220
HIGH SPEED SWITCHING
WIDE SOA
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 1100 V
Collector-Emitter Voltage VCEO 800 V
Emitter-Base Voltage VEBO 7 V
Collector Current (DC) IC 3 A
Collector Current (Pulse) IC 10 A
Base Current IB 1.5 A
1.Base 2.Collector 3.Emitter
C

3.3. ksc5027f.pdf Size:74K _samsung

KSC5027F NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING
TO-220F
WIDE SOA
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 1100 V
Collector-Emitter Voltage V CEO 800 V
Emitter-Base Voltage VEBO 7 V
Collector Current (DC) IC 3 A
Collector Current (Pulse) IC 10 A
Base Current IB 1.5 A
Collector Dissipation (TC=25

3.4. ksc5027.pdf Size:88K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon NPN Power Transistors KSC5027
DESCRIPTION ·
·With TO-220C package
·High voltage and high reliability
·High speed switching
·Wide area of safe operation
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO

Биполярный транзистор 2SC5253 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5253

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 50
W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V

Макcимальный постоянный ток коллектора (Ic): 6
A

Граничная частота коэффициента передачи тока (ft): 8
MHz

Статический коэффициент передачи тока (hfe): 9

Корпус транзистора: TO220

2SC5253
Datasheet (PDF)

4.1. 2sc5255.pdf Size:180K _toshiba

2SC5255
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5255
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.2. 2sc5256ft.pdf Size:104K _toshiba

4.3. 2sc5257.pdf Size:126K _toshiba

4.4. 2sc5256.pdf Size:164K _toshiba

4.5. 2sc5259.pdf Size:182K _toshiba

4.6. 2sc5254.pdf Size:177K _toshiba

2SC5254
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5254
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.7. 2sc5258.pdf Size:103K _toshiba

4.8. 2sc5251.pdf Size:35K _hitachi

2SC5251
Silicon NPN Triple Diffused Planar
Preliminary
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf = 0.2 sec (typ)
Isolated package
TO-3PFM (N)
Outline
TO-3PFM (N)
1. Base
2. Collector
3. Emitter
1
2
3
2SC5251
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector

4.9. 2sc5252.pdf Size:38K _hitachi

2SC5252
Silicon NPN Triple Diffused Planar
ADE-208-391A (Z)
2nd. Edition
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf ? 0.15 sec(typ.)
Isolated package
TO3PFM
Outline
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC5252
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit

4.10. 2sc5250.pdf Size:71K _hitachi

Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freet

4.11. 2sc5252.pdf Size:216K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5252
DESCRIPTION
·High speed switching
High breakdown voltage
VCBO = 1500 V
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Character display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1500 V
CBO
V Collector-Emitter Vo

4.12. 2sc5250.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC5250
DESCRIPTION
·Silicon NPN diffused planar transistor
·High speed switching
·Built-in damper diode type
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for display horizontal deflection output
Switching regulator and general purpose
AB

4.13. 2sc5259.pdf Size:1007K _kexin

SMD Type Transistors
NPN Transistors
2SC5259
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=15mA
1 2
● Collector Emitter Voltage VCEO=7V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

4.14. 2sc5254.pdf Size:1019K _kexin

SMD Type Transistors
NPN Transistors
2SC5254
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=40mA
● Collector Emitter Voltage VCEO=7V
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

2SC5253 Datasheet (PDF)

4.1. 2sc5255.pdf Size:180K _toshiba

4.2. 2sc5256ft.pdf Size:104K _toshiba

4.3. 2sc5257.pdf Size:126K _toshiba

4.4. 2sc5256.pdf Size:164K _toshiba

4.5. 2sc5259.pdf Size:182K _toshiba

4.6. 2sc5254.pdf Size:177K _toshiba

4.7. 2sc5258.pdf Size:103K _toshiba

4.8. 2sc5251.pdf Size:35K _hitachi

4.9. 2sc5252.pdf Size:38K _hitachi

4.10. 2sc5250.pdf Size:71K _hitachi

4.11. 2sc5252.pdf Size:216K _inchange_semiconductor

4.12. 2sc5250.pdf Size:188K _inchange_semiconductor

4.13. 2sc5259.pdf Size:1007K _kexin

4.14. 2sc5254.pdf Size:1019K _kexin

2SC5587 Datasheet (PDF)

1.1. 2sc5587.pdf Size:332K _toshiba

2SC5587
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5587
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
Unit: mm
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT

4.1. 2sc5588.pdf Size:331K _toshiba

2SC5588
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5588
Unit: mm
HORIZONTAL DEFLECTION OUTPUT FOR SUPER
HIGH RESOLUTION DISPLAY
COLOR TV FOR DIGITAL TV & HDTV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1700 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTER

4.2. 2sc5589.pdf Size:298K _toshiba

2SC5589
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5589
HORIZONTAL DEFLECTION OUTPUT FOR
HIGH RESOLUTION DISPLAY, COLOR TV
Unit: mm
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Co

4.3. 2sc5585 2sc5663.pdf Size:68K _rohm

2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
External dimensions (Unit : mm)
Applications
For switching
2SC5585
For muting
(1)
(2)
(3)
0.8
Features
1.6
1) High current.
2) Low VCE(sat).
0.1Min.
(1) Emitter
R

4.4. 2sc5584.pdf Size:45K _panasonic

Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

4.5. 2sc5580.pdf Size:43K _panasonic

Transistors
2SC5580
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency oscillation / switching
0.3+0.1 0.15+0.10
0.05
0.0
3
Features
High transition frequency fT
S-mini type package, allowing downsizing of the equipment and
1 2
automatic insertion through the tape packing and the magazine
(0.65) (0.65)
packing.
1.30.1
2.00.2
10
Absolute Maximum Ratings Ta =

4.6. 2sc5583.pdf Size:46K _panasonic

Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.00.5 5.00.3
(3.0)
? 3.30.2
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
High-speed switching
Wide area of safe operation (ASO) (1.5)
2.00.3
2.70.3
3.00.3
1.00.2
Absolute Maximum Ratings TC = 25C

4.7. 2sc5585.pdf Size:198K _secos

2SC5585
0.5A , 15V
NPN Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
SOT-523
FEATURES
High Current.
Low VCE(sat). VCE(sat)?0.25V (@IC=200mA / IB=10mA)
A
Complement of 2SC4738. M
3
3
Top View C B
Application
1
1 2
General Purpose Amplification.
L 2
K
E
MARKING
D
H J

4.8. 2sc5586 2sc5830 2sc5924.pdf Size:1332K _sanken-ele

4.9. 2sc5584.pdf Size:186K _inchange_semiconductor

isc Product Specification
isc Silicon NPN Power Transistor 2SC5584
DESCRIPTION
·Silicon NPN triple diffusion mesa type
·High Switching Speed
·High Breakdown Voltage-
: V = 1500V(Min)
(BR)CBO
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.10. 2sc5585.pdf Size:204K _lge

2SC5585
SOT-523 Transistor(NPN)
1. BASE
SOT-523
2. EMITTER
3. COLLECTOR
Features

High current.

Low VCE(sat). VCE(sat)?250mV at IC = 200mA / IB = 10mA
MARKING: BX
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Vol

4.11. 2sc5585.pdf Size:192K _wietron

2SC5585
NPN TRANSISTOR
3
P b Lead(Pb)-Free
1
2
FEATURES:
SOT-523(SC-75)
* High current.
* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA
MAXIMUM RATINGS (TA=25°Cunless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current –Continuous IC 500 mA
Collector Dissipatio

KSC5027 Datasheet (PDF)

1.1. ksc5027.pdf Size:53K _fairchild_semi

KSC5027 High Voltage and High Reliability � High Speed Switching � W >1.2. ksc5027.pdf Size:24K _samsung

KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A 1.Base 2.Collector 3.Emitter C

1.3. ksc5027f.pdf Size:74K _samsung

KSC5027F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING TO-220F W >1.4. ksc5027.pdf Size:88K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5027 DESCRIPTION · ·With TO-220C package ·High voltage and high reliability ·High speed switching ·W >

2SC5027E Datasheet (PDF)

1.1. 2sc5027e.pdf Size:198K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC5027E NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH
RELIABILITY TRANSISTOR
.
FEATURES
* High Speed Switching
* Wide SOA
ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube
2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube
2SC5027EL-x-T

3.1. 2sc5027a.pdf Size:236K _update

RoHS
2SC5027 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
3A/ 800V / 50W
FEATURES
High-speed switching
High breakdown voltage and high reliability
C
Wide SOA (Safe Operation Area)
TO-220 package which can be installed to the
heat sink with one screw
B
B
C
APPLICATIONS
C
E
E
Switching regulator and general purpose
TO-2

3.2. 2sc5027af.pdf Size:236K _update

3.3. 2sc5027.pdf Size:241K _toshiba

3.4. 2sc5027.pdf Size:49K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC5027 NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH
RELIABILITY
.
1
FEATURES
TO-220
* High Voltage (VCEO = 800V)
* High Speed Switching
* Wide SOA
1
TO-220F
*Pb-free plating product number: 2SC5027L
ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
2SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-220

3.5. 2sc5027.pdf Size:213K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SC5027
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = 800V(Min)
(BR)CEO
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Collector-Base Voltage 1100 V
CBO
V Collector-Emitter Voltage 800 V
CEO
V Emitter-Base Volt

2SC5027R Datasheet (PDF)

3.1. 2sc5027a.pdf Size:236K _update

3.2. 2sc5027af.pdf Size:236K _update

3.3. 2sc5027.pdf Size:241K _toshiba

3.4. 2sc5027.pdf Size:49K _utc

3.5. 2sc5027e.pdf Size:198K _utc

3.6. 2sc5027.pdf Size:213K _inchange_semiconductor

2SC5003 Datasheet (PDF)

1.1. 2sc5003.pdf Size:228K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC5003
DESCRIPTION
·With TO-3PML package
·High voltage switching transistor
·Built-in damper diode
APPLICATIONS
·Display horizontal deflection output;
switching regulator and general purpose
PINNING
PIN DESCRIPTION
1 Base
2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter
Absolute maximum rat

1.2. 2sc5003.pdf Size:25K _sanken-ele

Equivalent C
circuit
B
Built-in Damper Diode
2SC5003
(50?)
E
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
External Dimensions FM100(TO3PF)
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)
Symbol 2SC5003 Symbol Conditions 2SC5003 Unit
U

1.3. 2sc5003.pdf Size:177K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5003
DESCRIPTION
·With TO-3PML package
·High voltage switching transistor
·Built-in damper diode
APPLICATIONS
·Display horizontal deflection output;
switching regulator and general purpose
PINNING
PIN DESCRIPTION
1 Base
2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

KSC5027F Datasheet (PDF)

1.1. ksc5027f.pdf Size:74K _samsung

3.1. ksc5027.pdf Size:53K _fairchild_semi

3.2. ksc5027.pdf Size:24K _samsung

3.3. ksc5027.pdf Size:88K _inchange_semiconductor

BU5027S Datasheet (PDF)

1.1. bu5027s.pdf Size:110K _jdsemi

R
BU5027S
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Computer aided power and
Switch-mode power supplies
2．
2．
2．FEATURES
2．
Hi

4.1. bu5027af.pdf Size:115K _jdsemi

R
BU5027AF
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Computer aided power and
Switch-mode power supplies
2．
2．
2．FEATURES
2．
H

4.2. bu5027a.pdf Size:114K _jdsemi

R
BU5027A
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si NPN
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Computer aided power and
Switch-mode power supplies
2．
2．
2．FEATURES
2．
Hi

Биполярный транзистор BU5027AF — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BU5027AF

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 20
W

Макcимально допустимое напряжение коллектор-база (Ucb): 1100
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V

Макcимальный постоянный ток коллектора (Ic): 2.7
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 4
MHz

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора: TO220F

BU5027AF
Datasheet (PDF)

1.1. bu5027af.pdf Size:115K _jdsemi

3.1. bu5027a.pdf Size:114K _jdsemi

4.1. bu5027s.pdf Size:110K _jdsemi

KSC5027 Datasheet (PDF)

1.1. ksc5027.pdf Size:53K _fairchild_semi

1.2. ksc5027.pdf Size:24K _samsung

1.3. ksc5027f.pdf Size:74K _samsung

1.4. ksc5027.pdf Size:88K _inchange_semiconductor

Биполярный транзистор 2SC5057 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5057

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 200
W

Макcимально допустимое напряжение коллектор-база (Ucb): 900
V

Макcимальный постоянный ток коллектора (Ic): 20
A

Предельная температура PN-перехода (Tj): 150
°C

Статический коэффициент передачи тока (hfe): 38

Корпус транзистора: TO3PL

2SC5057
Datasheet (PDF)

4.1. 2sc5052.pdf Size:118K _toshiba

4.2. 2sa1900 2sc5053.pdf Size:47K _rohm

2SA1900
Transistors
Transistors
2SC5053
(96-115-B352)
(96-196-D352)
297
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only.

4.3. 2sc5050.pdf Size:24K _hitachi

2SC5050
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 11 GHz Typ
• High gain, low noise figure
PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC5050
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collect

4.4. 2sc5051.pdf Size:24K _hitachi

2SC5051
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 11 GHz Typ
• High gain, low noise figure
PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC5051
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collec

4.5. 2sc5053.pdf Size:873K _kexin

SMD Type Transistors
NPN Transistors
2SC5053
SOT-89
Unit:mm
1.70 0.1
■ Features
● Collector Current Capability IC=2A
● Collector Emitter Voltage VCEO=50V
● Complementary to 2SA1900
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Collector — Emitter Voltage VCEO 50

4.6. 2sc5050.pdf Size:348K _kexin

SMD Type Transistors
NPN Transistors
2SC5050
SOT-23
Unit: mm
2.9+0.1
-0.1
+0.1
0.4-0.1
3
■ Features
● Collector Current Capability IC=50mA
1 2
● Collector Emitter Voltage VCEO=8V
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collect

4.7. 2sc5051.pdf Size:349K _kexin

SMD Type Transistors
NPN Transistors
2SC5051
■ Features
● Collector Current Capability IC=50mA
● Collector Emitter Voltage VCEO=8V
1.Base
2.Emitter
3.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collector — Emitter Voltage VCEO 8 V
Emitter — Base Voltage VEBO 1.5
Collector Current — Continuous IC 50 mA

BU5027A Datasheet (PDF)

1.1. bu5027af.pdf Size:115K _jdsemi

1.2. bu5027a.pdf Size:114K _jdsemi

4.1. bu5027s.pdf Size:110K _jdsemi

C5027 характеристики на русском

2SC5353 Datasheet (PDF)

2SC5048 Datasheet (PDF)

KSC5030F Datasheet (PDF)

KSC5027R Datasheet (PDF)

Биполярный транзистор 2SC5253 — описание производителя. Основные параметры. Даташиты.

2SC5253 Datasheet (PDF)

2SC5253 Datasheet (PDF)

2SC5587 Datasheet (PDF)

KSC5027 Datasheet (PDF)

2SC5027E Datasheet (PDF)

2SC5027R Datasheet (PDF)

2SC5003 Datasheet (PDF)

KSC5027F Datasheet (PDF)

BU5027S Datasheet (PDF)

Биполярный транзистор BU5027AF — описание производителя. Основные параметры. Даташиты.

BU5027AF Datasheet (PDF)

KSC5027 Datasheet (PDF)

Биполярный транзистор 2SC5057 — описание производителя. Основные параметры. Даташиты.

2SC5057 Datasheet (PDF)

BU5027A Datasheet (PDF)

2SC5253
Datasheet (PDF)

BU5027AF
Datasheet (PDF)

2SC5057
Datasheet (PDF)