Rjh60f5

RJH60F5BDPQ-A0 — IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: RJH60F5BDPQ-A0

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 260.4

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.37

Максимально допустимое напряжение эмиттер-затвор (Ueg): 30

Максимальный постоянный ток коллектора (Ic): 80

Максимальная температура перехода (Tj): 150

Время нарастания: 34

Емкость коллектора (Cc), pf: 122

Корпус: TO247A

RJH60F5BDPQ-A0
Datasheet (PDF)

1.1. rjh60f5bdpq-a0.pdf Size:92K _igbt

 Preliminary Datasheet
RJH60F5BDPQ-A0
R07DS0631EJ0100
600V — 40A — IGBT
Rev.1.00
High Speed Power Switching
Feb 17, 2012
Features
 Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching
tf = 68 ns typ. (at IC

3.1. rjh60f5dpk.pdf Size:219K _update_igbt

 Preliminary
www.DataSheet4U.com
RJH60F5DPK
Silicon N Channel IGBT
REJ03G1836-0100
Rev.1.00
High Speed Power Switching
Oct 13, 2009
Features
• High speed switching
• Low on-state voltage
• Fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
1. Gate
2. Collector
G
3. Emitter
4. Collector (Flange)
1
2
3
E
Absolute Max

3.2. rjh60f5dpq-a0.pdf Size:85K _igbt

 Preliminary Datasheet
RJH60F5DPQ-A0
R07DS0326EJ0200
600 V — 40 A — IGBT
Rev.2.00
High Speed Power Switching
Jul 22, 2011
Features
 Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching
tr = 85 ns typ. (at I

 3.3. rjh60f5dpk.pdf Size:82K _igbt

 Preliminary Datasheet
RJH60F5DPK
R07DS0055EJ0300
Silicon N Channel IGBT
Rev.3.00
High Speed Power Switching
Nov 24, 2010
Features
 Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching
tr = 85 ns typ. (at I

3.4. r07ds0326ej rjh60f5dpq.pdf Size:88K _renesas

Preliminary Datasheet
RJH60F5DPQ-A0
R07DS0326EJ0200
600 V — 40 A — IGBT
Rev.2.00
High Speed Power Switching
Jul 22, 2011
Features
? Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C)
? Built in fast recovery diode in one package
? Trench gate and thin wafer technology
? High speed switching
tr = 85 ns typ. (at IC = 30 A, VC

 3.5. r07ds0055ej rjh60f5dpk.pdf Size:85K _renesas

Preliminary Datasheet
RJH60F5DPK
R07DS0055EJ0300
Silicon N Channel IGBT
Rev.3.00
High Speed Power Switching
Nov 24, 2010
Features
? Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C)
? Built in fast recovery diode in one package
? Trench gate and thin wafer technology
? High speed switching
tr = 85 ns typ. (at IC = 30 A, VC

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