Fga25n120
Содержание:
KGT25N120KDA — IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: KGT25N120KDA
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc): 310
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200
Напряжение насыщения коллектор-эмиттер (Ucesat): 1.95
Максимально допустимое напряжение эмиттер-затвор (Ueg): 20
Максимальный постоянный ток коллектора (Ic): 50
Максимальная температура перехода (Tj): 150
Время нарастания: 50
Емкость коллектора (Cc), pf: 100pF
Корпус: TO247
KGT25N120KDA
Datasheet (PDF)
1.1. kgt25n120nda.pdf Size:122K _igbt
SEMICONDUCTOR
KGT25N120NDA
TECHNICAL DATA
General Description
A
KEC NPT IGBTs offer low switching losses, high energy efficiency
Q B
N
O K
and high avalanche ruggedness for soft switching application such as
DIM MILLIMETERS
IH(induction heating), microwave oven, etc.
_
A +
15.60 0.20
_
B
4.80 + 0.20
_
C 19.90 + 0.20
_
D 2.00 0.20
FEATURES +
_
d +
1.00 0.20
·High speed
1.2. kgt25n120ndh.pdf Size:1478K _igbt
SEMICONDUCTOR
KGT25N120NDH
TECHNICAL DATA
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
IH(induction heating), microwave oven, etc.
FEATURES
·High speed switching
·High system efficiency
·Soft current turn-off waveforms
·Extremely enhanced avalanche capability
MAXIMUM RAT
1.3. kgt25n120kda.pdf Size:565K _igbt
SEMICONDUCTOR
KGT25N120KDA
TECHNICAL DATA
General Description
B
A
KEC NPT Trench IGBTs offer low switching losses, high energy
O
S K
efficiency and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters. DIM MILLIMETERS
_
+
A 15.90 0.30
_
B
5.00 + 0.20
_
C
20.85 + 0.30
FEATURES
_
D 3.00 + 0.2
1.4. kgt25n120nda.pdf Size:123K _kec
SEMICONDUCTOR
KGT25N120NDA
TECHNICAL DATA
General Description
A
KEC NPT IGBTs offer low switching losses, high energy efficiency
Q B
N
O K
and high avalanche ruggedness for soft switching application such as
DIM MILLIMETERS
IH(induction heating), microwave oven, etc.
_
A +
15.60 0.20
_
B
4.80 + 0.20
_
C 19.90 + 0.20
_
D 2.00 0.20
FEATURES +
_
d +
1.00 0.20
·High speed
1.5. kgt25n120ndh.pdf Size:1480K _kec
SEMICONDUCTOR
KGT25N120NDH
TECHNICAL DATA
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
IH(induction heating), microwave oven, etc.
FEATURES
·High speed switching
·High system efficiency
·Soft current turn-off waveforms
·Extremely enhanced avalanche capability
MAXIMUM RAT
1.6. kgt25n120kda.pdf Size:567K _kec
SEMICONDUCTOR
KGT25N120KDA
TECHNICAL DATA
General Description
B
A
KEC NPT Trench IGBTs offer low switching losses, high energy
O
S K
efficiency and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters. DIM MILLIMETERS
_
+
A 15.90 0.30
_
B
5.00 + 0.20
_
C
20.85 + 0.30
FEATURES
_
D 3.00 + 0.2
Другие IGBT… KGH15N120NDA
, KGH25N120NDA
, KGT12N120NDH
, KGT15N120KDA
, KGT15N120NDA
, KGT15N120NDH
, KGT15N60FDA
, KGT20N60KDA
, FGA25N120ANTD
, KGT25N120NDA
, KGT25N120NDH
, KGT25N135NDH
, KGT30N120NDA
, KGT30N120NDH
, KGT30N60KDA
, KGT40N60KDA
, KGT50N60KDA
.
FGA25N120ANTDTU Datasheet Download — Fairchild Semiconductor
| Номер произв | FGA25N120ANTDTU | |||
| Описание | IGBT | |||
| Производители | Fairchild Semiconductor | |||
| логотип | ||||
1Page
FGA25N120ANTDTU • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current @ TC = 25°C @ TC = 100°C Maximum Power Dissipation @ TC = 25°C @ TC = 100°C Storage Temperature Range RθJC(IGBT) RθJC(DIODE) RθJA Parameter ± 20 50 °C °C °C Typ. °CW °CW °CW www.fairchildsemi.com
Package Marking and Ordering Information N/A N/A 30 Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Symbol ICES IGES Collector Cut-Off Current VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Cies Coes Cres Input Capacitance td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time VCE = VCES, VGE = 0 V VGE = VGES, VCE = 0 V IC = 25 mA, VCE = VGE IC = 25 A, VGE = 15 V IC = 25 A, VGE = 15 V, TC = 125°C IC = 50 A, VGE = 15 V VCE = 30 V, VGE = 0 V, f = 1 MHz VCC = 600 V, IC = 25 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C VCC = 600 V, IC = 25 A, RG = 10Ω, VGE = 15 V, Inductive Load, TC = 125°C VCE = 600 V, IC = 25 A, VGE = 15 V — — 3 mA
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted Symbol VFM Diode Forward Voltage IF = 25 A TC = 25°C TC = 125°C trr Diode Reverse Recovery Time TC = 25°C TC = 125°C Irr Diode Peak Reverse Recovery Cur- IF = 25 A rent diF/dt = 200 A/μs TC = 25°C TC = 125°C Qrr Diode Reverse Recovery Charge TC = 25°C TC = 125°C Min. |
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| Всего страниц | 10 Pages | |||
| Скачать PDF |
