H20r1203
IHW30N120R3 — IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IHW30N120R3
Маркировка: H30R1203
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc): 349
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200
Напряжение насыщения коллектор-эмиттер (Ucesat): 1.55
Максимально допустимое напряжение эмиттер-затвор (Ueg): 20
Максимальный постоянный ток коллектора (Ic): 60
Максимальная температура перехода (Tj): 175
Емкость коллектора (Cc), pf: 68
Корпус: TO247
IHW30N120R3
Datasheet (PDF)
1.1. ihw30n120r2.pdf Size:579K _igbt_a
IHW30N120R2
Resonant Switching Series
Reverse Conducting IGBT with monolithic body diode
C
Features:
• Powerful monolithic body diode with very low forward voltage
• Body diode clamps negative voltages
TM
• TrenchStop and Fieldstop technology for 1200V applications G
E
offers :
— very tight parameter distribution
— high ruggedness, temperature stable behavior
1.2. ihw30n120r3.pdf Size:1983K _igbt_a
Resonant Switching Series
Reverse conducting IGBT with monolithic body diode
IHW30N120R3
Data sheet
Industrial Power Control
IHW30N120R3
Resonant Switching Series
Reverse conducting IGBT with monolithic body diode
C
Features:
• Powerful monolithic body diode with low forward voltage
designed for soft commutation only
• TRENCHSTOPTM technology offering:
— very tight parameter d
1.3. ihw30n120r2.pdf Size:579K _infineon
IHW30N120R2
Resonant Switching Series
Reverse Conducting IGBT with monolithic body diode
C
Features:
• Powerful monolithic body diode with very low forward voltage
• Body diode clamps negative voltages
TM
• TrenchStop and Fieldstop technology for 1200V applications G
E
offers :
— very tight parameter distribution
— high ruggedness, temperature stable behavior
1.4. ihw30n120r2 rev1 5g.pdf Size:360K _infineon
IHW30N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
C
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• TrenchStop and Fieldstop technology for 1200 V applications G
E
offers :
— very tight parameter distribution
— high ruggedness, temperature stable behavior
• NP
1.5. ihw30n120r3.pdf Size:1983K _infineon
Resonant Switching Series
Reverse conducting IGBT with monolithic body diode
IHW30N120R3
Data sheet
Industrial Power Control
IHW30N120R3
Resonant Switching Series
Reverse conducting IGBT with monolithic body diode
C
Features:
• Powerful monolithic body diode with low forward voltage
designed for soft commutation only
• TRENCHSTOPTM technology offering:
— very tight parameter d
Другие IGBT… NGTB15N120IHRWG
, NGTB20N120IH
, NGTB20N120IHWG
, MMG150H160UX6TN
, MMG75H120X6TN
, MMG75S120B6TN
, MMG75W120X6TN
, MMG75W120XB6TN
, IKW50N60H3
, IHW30N135R3
, IRG8P50N120KD
, MMG100HB060H6EN
, MMG50HB120H6UN
, KGF40N120KDA
, KGF75N60KDB
, NGTB15N135IHR
, MMG50J120U
.
