2sb772 datasheet, equivalent, cross reference search

Содержание:

B772S Datasheet (PDF)
Биполярный транзистор B772S — описание производителя. Основные параметры. Даташиты.
B772S Datasheet (PDF)
B722 Datasheet (PDF)
2SB772-Y Datasheet (PDF)
Биполярный транзистор HSB772 — описание производителя. Основные параметры. Даташиты.
HSB772 Datasheet (PDF)
2SD772 Datasheet (PDF)
2SB772L Datasheet (PDF)
B772-Y Datasheet (PDF)
B772S Datasheet (PDF)
HSB772 Datasheet (PDF)
B772-R Datasheet (PDF)
B772PC Datasheet (PDF)
H772 Datasheet (PDF)
B772M Datasheet (PDF)
Биполярный транзистор BD772-Y — описание производителя. Основные параметры. Даташиты.
BD772-Y Datasheet (PDF)

B772S Datasheet (PDF)

1.1. btb772sa3.pdf Size:352K _upd

Spec. No. : C817A3-H
Issued Date : 2003.05.31
CYStech Electronics Corp.
Revised Date:2013.03.21
Page:1/6
Low Vcesat PNP Epitaxial Planar Transistor
BTB772SA3
Features
• Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A
• Excellent current gain characteristics
• Complementary to BTD882SA3
• Pb-free lead plating and halogen-free package
Symbol Outline
BTB77

1.2. 2sb772s 3ca772s.pdf Size:256K _update

2SB772S(3CA772S) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于 3 瓦音频放大输出,电压调节器,电源转换器和继电器驱/Purpose: Output
stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver.
特点:饱和压降 V 小,线性极好,h 高/Features: Low saturation voltage, excellent h
FE
CE(sat) FE
linearity and high h .
FE
极限

1.3. b772ss.pdf Size:233K _utc

UNISONIC TECHNOLOGIES CO., LTD
B772SS PNP SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC B772SS is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to D882SS
ORDERING INFORMATION
Order Number Pin A

1.4. 2sb772s.pdf Size:251K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SB772S PNP SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772S is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SD882S
ORDERING INFORMATION
Ordering Number

1.5. b772s.pdf Size:346K _secos

B772S
-3A , -40V
PNP Plastic-Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
Low speed switching.
G H
1Emitter
1
1
1
2Collector
2
2
2
J
3Base
3
3
3
CLASSIFICATION OF hFE
A D
Millimeter
Product-Rank B772S-R B772S-O B772S-Y B772S-GR
REF.
B
Min. Max.
A 4.40 4.70

1.6. tsb772sct.pdf Size:78K _taiwansemi

TSB772S
Low Vcesat PNP Transistor
TO-92
Pin Definition:
PRODUCT SUMMARY
1. Emitter
BVCBO -50V
2. Collector
3. Base
BVCEO -30V
IC -3A
VCE(SAT) -0.5V @ IC / IB = -2A / -200mA
Features Ordering Information
● Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)
Part No. Package Packing
● Complementary part with TSD882S
TSB772SCT B0 TO-92 1Kpcs / Bulk
Structure
T

1.7. b772s.pdf Size:195K _lge

B772S
Transistor(PNP)
TO-92
1. EMITTER
2. COLLECTOR
3 BASE
Features
Low speed switching
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous -3 A
PC Collector Power Dissipat

1.8. hsb772s.pdf Size:59K _hsmc

Spec. No. : HE6549
HI-SINCERITY
Issued Date : 1992.11.25
Revised Date : 2004.08.13
MICROELECTRONICS CORP.
Page No. : 1/5
HSB772S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772S is designed for using in output stage of 0.75W amplifier, voltage
regulator, DC-DC converter and driver.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature…………………

1.9. btb772st3.pdf Size:221K _cystek

Spec. No. : C809T3
Issued Date : 2008.08.01
CYStech Electronics Corp.
Revised Date:
Page:1/5
Low Vcesat PNP Epitaxial Planar Transistor
BTB772ST3
Features
• Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A
• Excellent current gain characteristics
• Pb-free package
Symbol Outline
BTB772ST3 TO-126
B：Base
C：Collector
E：Emitter
E C B
Absolute

1.10. hb772s.pdf Size:27K _shantou-huashan

PN P S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. P
HB772S
█ AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
TO-92
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃
Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃
PC——Collector Dissipation⋯⋯

Биполярный транзистор B772S — описание производителя. Основные параметры. Даташиты.

2n2222a datasheet, equivalent, cross reference search

Наименование производителя: B772S

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.625
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 3
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 50
MHz

Статический коэффициент передачи тока (hfe): 60

Корпус транзистора: TO92

B772S
Datasheet (PDF)

Tip41 datasheet, equivalent, cross reference search

1.1. btb772sa3.pdf Size:352K _upd

1.2. 2sb772s 3ca772s.pdf Size:256K _update

1.3. b772ss.pdf Size:233K _utc

1.4. 2sb772s.pdf Size:251K _utc

1.5. b772s.pdf Size:346K _secos

1.6. tsb772sct.pdf Size:78K _taiwansemi

1.7. b772s.pdf Size:195K _lge

1.8. hsb772s.pdf Size:59K _hsmc

1.9. btb772st3.pdf Size:221K _cystek

1.10. hb772s.pdf Size:27K _shantou-huashan

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

B722 Datasheet (PDF)

8550s datasheet, equivalent, cross reference search

1.1. b722.pdf Size:207K _upd

B772(PNP)
TO-126 Transistor
TO-126
1. EMITTER
2.COLLECTOR
3.BASE
3
2
1
Features

Low speed switching
2.500
7.400
2.900
1.100
7.800 Dimensions in inches and (millimeters)
1.500
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
3.900
3.000
4.100
Symbol Parameter Value Units
3.200
10.600
0.000
VCBO Collector-Base Voltage -40 V
11.000
0.300
VCEO Collector-E

1.2. ksb722.pdf Size:93K _upd

PNP Transistor KSB772 datasheet
www.semicon-data.de
PNP Transistor KSB772 datasheet
www.semicon-data.de
PNP Transistor KSB772 datasheet
www.semicon-data.de

1.3. 2sb722.pdf Size:206K _inchange_semiconductor

isc Silicon PNP Power Transistors 2SB722
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V = -160V(Min)
(BR)CEO
·High Power Dissipation-
: P = 150W(Max)@T =25℃
C C
·High Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

1.4. b722 to-126.pdf Size:206K _lge

B772(PNP)
TO-126 Transistor
TO-126
1. EMITTER
2.COLLECTOR
3.BASE
3
2
1
Features

Low speed switching
2.500
7.400
2.900
1.100
7.800 Dimensions in inches and (millimeters)
1.500
MAXIMUM RATINGS (TA=25? unless otherwise noted)
3.900
3.000
4.100
Symbol Parameter Value Units
3.200
10.600
0.000
VCBO Collector-Base Voltage -40 V
11.000
0.300
VCEO Collector-Emitte

2SB772-Y Datasheet (PDF)

1.1. 2sb772-y.pdf Size:287K _update

2SB772-R
MCC
2SB772-O
Micro Commercial Components
TM
20736 Marilla Street Chatsworth
2SB772-Y
Micro Commercial Components
CA 91311
2SB772-GR
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Lead Free Finish/RoHS Compliant (Note1) («P» Suffix designates
PNP Silicon
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
Plastic-Encapsulat

3.1. 2sb772-r.pdf Size:287K _update

3.2. 2sb772-gr.pdf Size:287K _update

3.3. 2sb772-o.pdf Size:287K _update

3.4. 2sb772-s.pdf Size:174K _fci

3.5. 2sb772-126.pdf Size:891K _kexin

DIP Type Transistors
PNP Tr
ansistors
2SB772
TO-126
Unit:mm
8.00± 0.30 3.25± 0.20
■ Features
● PNP transistor High current output up to 3A
● Low Saturation Voltage
ø3.20± 0.10
● Complement to 2SD882
(1.00) (0.50)
0.75± 0.10
1.75± 0.20
1.60± 0.10
0.75± 0.10
1 2 3
#1
+0.10
2.28TYP 2.28TYP 0.50 –0.05

1. Base
2. Collector
3. Emitte

Биполярный транзистор HSB772 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: HSB772

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 10
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 3
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 80
MHz

Ёмкость коллекторного перехода (Cc): 55
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO-126ML

HSB772
Datasheet (PDF)

1.1. hsb772.pdf Size:51K _hsmc

Spec. No. : HE6605
HI-SINCERITY
Issued Date : 1993.05.15
Revised Date : 2005.08.18
MICROELECTRONICS CORP.
Page No. : 1/5
HSB772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772 is designed for using in output stage of 1w audio amplifier, voltage
regulator, DC-DC converter and relay driver.
TO-126ML
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures
Storage Temperat

1.2. hsb772s.pdf Size:59K _hsmc

Другие транзисторы… HPN2222A
, HPN2907A
, HSA1015
, HSA733
, HSB1109
, HSB1109S
, HSB649A
, HSB649T
, 2N222
, HSB772S
, HSB857
, HSB857D
, HSB857J
, HSC1815
, HSC945
, HSD1609
, HSD1609S
.

2SD772 Datasheet (PDF)

1.1. 2sd772.pdf Size:208K _inchange_semiconductor

isc Silicon NPN Power Transistor 2SD772
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V = 80V(Min.)
CEO(SUS)
·Collector-Emitter Saturation Voltage-
: V = 1.6V(Max.) @I = 5A
CE(sat) C
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T

1.2. 2sd772 2sd772a 2sd772b.pdf Size:81K _inchange_semiconductor

Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD772 2SD772A 2SD772B
DESCRIPTION ·
·With TO-220C package
·High breakdown voltage
·High speed switching
APPLICATIONS
·For power amplifier applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER CONDITION

5.1. 2sd777.pdf Size:231K _toshiba

This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer

5.2. 2sd773.pdf Size:166K _nec

5.3. 2sd774.pdf Size:161K _nec

2SB772L Datasheet (PDF)

1.1. 2sb772l 3ca772l.pdf Size:280K _update

2SB772L(3CA772L) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于 3 瓦音频放大输出,电压调节器,电源转换和继电器驱动。
Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay
driver.
特点:饱和压降小, h 高且线性好/Features: Low saturation voltage, excellent h linearity
FE
FE
and high h .
FE
极

1.2. 2sb772l.pdf Size:24K _utc

UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772L is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882L
TO-92L
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unl

1.3. 2sb772l.pdf Size:468K _blue-rocket-elect

2SB772L(BR3CA772L)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-92LM 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92LM Plastic Package.
特征 / Features
饱和压降小, h 高且线性好。
FE
Low saturation voltage, excellent hFE linearity and high hFE.
用途 / Applications
用于 3 瓦音频放大输出,电压调节器,电源转换和继电

B772-Y Datasheet (PDF)

1.1. b772-r b772-y.pdf Size:245K _upd

B772-R
MCC
Micro Commercial Components
TM
B772-O
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311 B772-Y
Phone: (818) 701-4933
B772-GR
Fax: (818) 701-4939
Features
• Capable of 1.25Watts of Power Dissipation. PNP Silicon
• Collector-current 3.0A
Plastic-Encapsulate
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55O

1.2. 2sb772-y.pdf Size:287K _update

5.1. b772-gr b772-o.pdf Size:245K _upd

5.2. 2sb772-r.pdf Size:287K _update

5.3. 2sb772-gr.pdf Size:287K _update

5.4. 2sb772-o.pdf Size:287K _update

5.5. 2sb772-s.pdf Size:174K _fci

5.6. 2sb772-126.pdf Size:891K _kexin

1. Base
2. Collector
3. Emitte

B772S Datasheet (PDF)

1.1. btb772sa3.pdf Size:352K _upd

1.2. 2sb772s 3ca772s.pdf Size:256K _update

1.3. b772ss.pdf Size:233K _utc

1.4. 2sb772s.pdf Size:251K _utc

1.5. b772s.pdf Size:346K _secos

1.6. tsb772sct.pdf Size:78K _taiwansemi

1.7. b772s.pdf Size:195K _lge

1.8. hsb772s.pdf Size:59K _hsmc

1.9. btb772st3.pdf Size:221K _cystek

1.10. hb772s.pdf Size:27K _shantou-huashan

HSB772 Datasheet (PDF)

1.1. hsb772.pdf Size:51K _hsmc

1.2. hsb772s.pdf Size:59K _hsmc

B772-R Datasheet (PDF)

1.1. b772-r b772-y.pdf Size:245K _upd

1.2. 2sb772-r.pdf Size:287K _update

5.1. b772-gr b772-o.pdf Size:245K _upd

5.2. 2sb772-y.pdf Size:287K _update

5.3. 2sb772-gr.pdf Size:287K _update

5.4. 2sb772-o.pdf Size:287K _update

5.5. 2sb772-s.pdf Size:174K _fci

5.6. 2sb772-126.pdf Size:891K _kexin

1. Base
2. Collector
3. Emitte

B772PC Datasheet (PDF)

1.1. b772pc.pdf Size:114K _jdsemi

R
B772PC
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si PNP
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Charger、Emergency lamp and
Electric toy control circuit
2
2．
2．
2．FEATURES
2

1.2. b772pc 2.pdf Size:114K _jdsemi

5.1. b772p.pdf Size:116K _jdsemi

R
B772P
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
深圳市晶导电子有限公司
www.jdsemi.cn Bipolar Junction Transistor
ShenZhen Jingdao Electronic Co.,Ltd.
◆Si PNP
◆RoHS COMPLIANT
1．
1．
1．APPLICATION
1．
Charger、Emergency lamp and
Electric toy control circuit
2．
2．
2．FEATURES
2．

H772 Datasheet (PDF)

1.1. ch772gp.pdf Size:102K _upd

CHENMKO ENTERPRISE CO.,LTD
CH772GP
SMALL FLAT
PNP Epitaxial Transistor
VOLTAGE 30 Volts CURRENT 3 Ampere
APPLICATION
* Power driver and Dc to DC convertor .
FEATURE
* Small flat package. (DPAK)
DPAK
* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)
* High speed switching time: tstg= 1.0uSec (typ.)
* PC= 1.5 W (mounted on ceramic substrate).
.094 (2.38)
.086 (2.19)
* High s

1.2. ksh772.pdf Size:224K _upd

KSH772
KSH772
◎ SEMIHOW REV.A2,Mar 2008
KSH772
2
KSH772
Audio Frequency Power Amplifier
Audio Frequency Power Amplifier
— Low Speed Switching
— Complement to KSH882
3 Amperes
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25℃ unless otherwise noted
1 Watts
TO-126
CHARACTERISTICS SYMBOL RATING UNIT
1. Emitter
2. Collector
3. Base
Collector-Base Voltage VCBO

1.3. h772.pdf Size:817K _shantou-huashan

P NP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H772
█ APPLICATIONS
Audio Frequency Power Amplifier , Switching Power Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-126ML
Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃
Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ 150℃
PC——Collect

1.4. ch772gp.pdf Size:102K _chenmko

B772M Datasheet (PDF)

1.1. b772m.pdf Size:643K _upd

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
TO-252-2L
B772M TRANSISTOR (PNP)
FEATURES
1. BASE
Low Speed Switching
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V

1.2. 2sb772m 3ca772m.pdf Size:220K _update

2SB772M(3CG772M) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频放大输出,电压调节器,电源转换和继电器驱动。
Purpose: Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver.
特点:饱和压降小, h 高且线性好/Features: Low saturation voltage, excellent h linearity
FE
FE
and high h .
FE
极限参数/Absolut

1.3. 2sb772m.pdf Size:341K _blue-rocket-elect

2SB772M(BR3CG772M)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
饱和压降小, hFE 高且线性好。
Low saturation voltage, excellent hFE linearity and high hFE.
用途 / Applications
用于音频放大输出,电压调节器,电源转换和继电器驱动。

Биполярный транзистор BD772-Y — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BD772-Y

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.5
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 3
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 80
MHz

Статический коэффициент передачи тока (hfe): 60

Корпус транзистора: SOT89

BD772-Y
Datasheet (PDF)

1.1. bd772-y.pdf Size:371K _update

BD772-R
MCC
Micro Commercial Components
TM
BD772-O
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311 BD772-Y
Phone: (818) 701-4933
BD772-GR
Fax: (818) 701-4939
Features
• Lead Free Finish/RoHS Compliant («P» Suffix designates PNP Silicon
RoHS Compliant. See ordering information)
Plastic-Encapsulate
• Capable of 0.5Watts of Power Dissipation.
• Collecto

4.1. bd772-gr.pdf Size:371K _update

4.2. bd772-o.pdf Size:371K _update

4.3. bd772-r.pdf Size:371K _update

Другие транзисторы… BD681G
, BD682A
, BD682G
, BD683A
, BD684A
, BD772-GR
, BD772-O
, BD772-R
, BC548B
, BD810G
, BD882-GR
, BD882-O
, BD882-R
, BD882-Y
, BDS10IG
, BDS10N1A
, BDS10N1B
.