Даташит ao3407 pdf ( datasheet )

KO3407 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: KO3407

Маркировка: A7

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1.4
W

Предельно допустимое напряжение сток-исток (Uds): 30
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 3
V

Максимально допустимый постоянный ток стока (Id): 4.1
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 14.3
nC

Время нарастания (tr): 5
ns

Выходная емкость (Cd): 120
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.052
Ohm

Тип корпуса: SOT-23

KO3407
Datasheet (PDF)

1.1. ko3407.pdf Size:52K _update_mosfet

SMD Type IC
SMD Type Transistors
P-Channel Enhancement Mode Field Effect Transistor
KO3407
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
3
VDS (V) = -30V
ID =-4.1 A
12
RDS(ON) 52m (VGS = -10V)
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
RDS(ON) 87m (VGS = -4.5V) 1.9-0.1
1.Base
1. Gate
2.Emitter
2. Source
3. Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symb

5.1. ko3404.pdf Size:55K _update_mosfet

SMD Type IC
SMD Type Transistors
N-Channel Enhancement Mode Field Effect Transistor
KO3404
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
3
VDS (V) = 30V
ID =5.8 A (VGS=10V)
RDS(ON) 28 m (VGS =10V)
12
+0.1
+0.05
0.95-0.1 0.1-0.01
RDS(ON) 43 m (VGS =4.5V)
+0.1
1.9-0.1
1.Base
1. Gate
2.Emitter
2. Source
3. Drain
3.collector
Absolute Maximum Ratings Ta = 25
Paramet

5.2. ko3402.pdf Size:54K _update_mosfet

SMD Type IC
SMD Type MOSFET
N-Channel Enhancement Mode
Field Effect Transistor
KO3402(AO3402)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
3
Features
VDS (V) = 30V
ID =4A
12
+0.1
+0.05
RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01
+0.1
1.9-0.1
RDS(ON) 70m (VGS =4.5V)
RDS(ON) 110m (VGS =2.5V)
1.Base
1. Gate
2.Emitter
2. Source
3. Drain
3.collector
Absolute Maximum Ratings T

 5.3. ko3403.pdf Size:56K _update_mosfet

SMD Type IC
SMD Type Transistors
P-Channel Enhancement Mode Field Effect Transistor
KO3403
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
3
Features
VDS (V) =-30V
ID =-2.6 A (VGS=-10V)
12
RDS(ON) 130 m (VGS =-10V)
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
RDS(ON) 180 m (VGS =-4.5V)
RDS(ON) 260m (VGS =-2.5V)
1.Base
1. Gate
2.Emitter
2. Source
3. Drain
3.collector
Absolute

5.4. ko3409.pdf Size:54K _update_mosfet

SMD Type MOSFET
P-Channel Enhancement Mode
Field Effect Transistor
KO3409(AO3409)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
3
VDS (V) = -30V
ID =-2.6A(VGS = -10V)
12
RDS(ON)

 5.5. ko3400-89.pdf Size:1163K _kexin

SMD Type IC
SMD Type MOSFET
N-Channel MOSFET
KO3400
SOT-89
Unit:mm
Features
1.70 0.1
VDS (V) = 30V
ID = 5.8 A (VGS = 10V)
RDS(ON) 28m (VGS = 10V)
RDS(ON) 33m (VGS = 4.5V)
RDS(ON) 52m (VGS = 2.5V)
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
D
G
S
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 12 V
Continu

5.6. ko3401.pdf Size:1515K _kexin

SMD Type MOSFET
P-Channel Enhancement MOSFET
KO3401
SOT-89
Unit:mm
■ Features
1.70 0.1
● VDS (V) =-30V
● ID =-4.2 A (VGS =-10V)
● RDS(ON) ＜ 65mΩ (VGS =-10V)
● RDS(ON) ＜ 70mΩ (VGS =-4.5V)
D
0.42 0.1
● RDS(ON) ＜ 120mΩ (VGS =-2.5V) 0.46 0.1
1.Gate
G
2.Drain
S
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source

Другие MOSFET… KMB075N75P
, KMDF2C03HD
, KML0D4N20E
, KML0D4P20E
, KN0606L
, KO3402
, KO3403
, KO3404
, 2N4416
, KO3409
, KO3413
, KO3414
, KO3416
, KO3419
, KO3423
, KO8822
, KP11N60D
.

Биполярный транзистор BC847CW — описание производителя. Основные параметры. Даташиты.

Наименование производителя: BC847CW

Маркировка: 1G_1G-_1Gp_1Gs_1Gt_1GW_K1M

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.25
W

Макcимально допустимое напряжение коллектор-база (Ucb): 50
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 0.1
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 300
MHz

Ёмкость коллекторного перехода (Cc): 6
pf

Статический коэффициент передачи тока (hfe): 520

Корпус транзистора: SOT323

BC847CW
Datasheet (PDF)

1.1. bc847aw-g bc847cw-g.pdf Size:123K _upd

Small Signal Transistor
BC846AW-G Thru. BC848CW-G (NPN)
RoHS Device
Features
-Power dissipation
PCM: 0.15W (@TA=25°C)
SOT-323
-Collector current
ICM: 0.1A
0.087 (2.20)
-Collector-base voltage
0.079 (2.00)
VCBO: BC846W=80V
3
BC847W=50V
0.053(1.35)
BC848W=30V
0.045(1.15)
-Operating and storage junction temperature
1 2
range: TJ, TSTG= -55 to +150°C
0.006 (0.15)
0.055

1.2. bc848awt1g bc847cwt1g.pdf Size:68K _upd

BC846, BC847, BC848
Series
General Purpose
Transistors
NPN Silicon
http://onsemi.com
These transistors are designed for general purpose amplifier
applications. They are housed in the SC-70/SOT-323 which is
COLLECTOR
designed for low power surface mount applications.
3
Features
1
• Pb-Free Packages are Available
BASE
2
EMITTER
MAXIMUM RATINGS
3
Rating Symbol Value Unit
SC-7

 1.3. bc847cwr.pdf Size:417K _upd

BC846W SERIES
BC847W SERIES
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR BC846W and
BC847W Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERminiTM surface mount package,
designed for general purpose switching and amplifier
applications.
MARKING CODE: SEE MARKING CODE

1.4. bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf Size:46K _update

BC846AW — BC848CW
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Ideally Suited for Automatic Insertion
SOT-323
Complementary PNP Types Available
A
(BC856W-BC858W) Dim Min Max
C
A
For Switching and AF Amplifier Applications 0.25 0.40
B
1.15 1.35
Mechanical Data
B C
C
2.00 2.20
Case: SOT-323, Molded Plastic
D
0.65 Nominal
B E
Case material — UL Flammability Rating

 1.5. sbc847cwt3g.pdf Size:109K _update

BC846, BC847, BC848
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
www.onsemi.com
applications. They are housed in the SC-70/SOT-323 which is
designed for low power surface mount applications.
COLLECTOR
Features
3
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC

1.6. sbc847cwt1g.pdf Size:109K _update

BC846, BC847, BC848
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
www.onsemi.com
applications. They are housed in the SC-70/SOT-323 which is
designed for low power surface mount applications.
COLLECTOR
Features
3
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC

1.7. bc847bw bc847cw.pdf Size:42K _st

BC847BW
BC847CW

SMALL SIGNAL NPN TRANSISTORS
PRELIMINARY DATA
Type Marking
BC847BW 1FW
BC847CW 1GW
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
MINIATURE SOT-323 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
BC847BW — THE PNP COMPLEMENTARY
TYPE IS BC857BW
SOT-323
APPLICATIONS
WELL SUITABLE FOR PORTABLE
EQUIPMENT
SMALL LOAD SWITCH TRANSISTORS
WITH HIGH

1.8. lbc847cwt1g.pdf Size:402K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
NPN Silicon
We declare that the material of product compliance with RoHS requirements. CWT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site
LBC848AWT1G,BWT1G
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
CWT1G
( – )
ORDERING INFORMATION Pb Free

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

BLM3407 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BLM3407

Маркировка: 3407

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1.4
W

Предельно допустимое напряжение сток-исток (Uds): 30
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Пороговое напряжение включения Ugs(th): 3
V

Максимально допустимый постоянный ток стока (Id): 4.1
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 14
nC

Время нарастания (tr): 5
ns

Выходная емкость (Cd): 120
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.065
Ohm

Тип корпуса: SOT-23

BLM3407
Datasheet (PDF)

1.1. blm3407a.pdf Size:215K _update-mosfet

Pb Free Product
BLM3407A
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
D
The BLM3407A uses advanced trench technology to provide
excellent R , low gate charge and operation with gate
DS(ON)
G
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
S
GENERAL FEATURES
Schematic diagram
● V = -30V,I = -4.3A
DS D
R 1.2. blm3407.pdf Size:213K _update-mosfet

Pb Free Product
BLM3407
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
D
The BLM3407 uses advanced trench technology to provide
excellent R , low gate charge and operation with gate
DS(ON)
G
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
S
GENERAL FEATURES
Schematic diagram
● V = -30V,I = -4.1A
DS D
R

 1.3. blm3407a.pdf Size:215K _belling

Pb Free Product
BLM3407A
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
D
The BLM3407A uses advanced trench technology to provide
excellent R , low gate charge and operation with gate
DS(ON)
G
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
S
GENERAL FEATURES
Schematic diagram
● V = -30V,I = -4.3A
DS D
R 1.4. blm3407.pdf Size:213K _belling

Pb Free Product
BLM3407
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
D
The BLM3407 uses advanced trench technology to provide
excellent R , low gate charge and operation with gate
DS(ON)
G
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
S
GENERAL FEATURES
Schematic diagram
● V = -30V,I = -4.1A
DS D
R

Другие MOSFET… BFD88
, BLM138K
, BLM2301
, BLM2302
, BLM2305
, BLM3400
, BLM3401
, BLM3401A
, 2N7000
, BLM3407A
, BLM3415
, BLM4435
, BLM4953
, BLM4953A
, BLM7002
, BLM7002K
, BLM8205
.

Биполярный транзистор 2SC3407 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3407

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 3.5
W

Макcимально допустимое напряжение коллектор-база (Ucb): 36
V

Макcимальный постоянный ток коллектора (Ic): 2
A

Предельная температура PN-перехода (Tj): 175
°C

Граничная частота коэффициента передачи тока (ft): 915
MHz

Статический коэффициент передачи тока (hfe): 30

Корпус транзистора: X55-1

2SC3407
Datasheet (PDF)

4.1. 2sc3405.pdf Size:209K _toshiba

2SC3405
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3405
Industrial Applications
Switching Regulator and High Voltage Switching
Unit: mm
Applications
High Speed DC-DC Converter Applications
• Excellent switching times: tr = 1.0 µs (max)
t = 1.0 µs (max), (I = 0.3 A)
f C
• High collector breakdown voltage: V = 800 V
CEO
Maximum Ratings (Ta = 25°C)
Cha

4.2. 2sc3400.pdf Size:87K _sanyo

 4.3. 2sc3402.pdf Size:88K _sanyo

4.4. 2sc3401.pdf Size:87K _sanyo

 4.5. 2sc3404.pdf Size:150K _mitsubishi

4.6. 2sc3403.pdf Size:75K _no

4.7. 2sc3409.pdf Size:145K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC3409
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maxi

4.8. 2sc3409.pdf Size:186K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC3409
DESCRIPTION
·Low Collector Saturation Voltage
·100% avalanche tested
·Good Linearity of h
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB

Другие транзисторы… 2SC340
, 2SC3400
, 2SC3401
, 2SC3402
, 2SC3403
, 2SC3404
, 2SC3405
, 2SC3406
, AC128
, 2SC3408
, 2SC3409
, 2SC341
, 2SC3410
, 2SC3411
, 2SC3412
, 2SC3413
, 2SC3414
.

AO3415A MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AO3415A

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1.5
W

Предельно допустимое напряжение сток-исток (Uds): 20
V

Предельно допустимое напряжение затвор-исток (Ugs): 8
V

Пороговое напряжение включения Ugs(th): 0.9
V

Максимально допустимый постоянный ток стока (Id): 5
A

Максимальная температура канала (Tj): 150
°C

Время нарастания (tr): 9
ns

Выходная емкость (Cd): 115
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.041
Ohm

Тип корпуса: SOT23-3

AO3415A
Datasheet (PDF)

1.1. ao3415a.pdf Size:319K _aosemi

AO3415A
20V P-Channel MOSFET
General Description Product Summary
VDS -20V
The AO3415A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
ID (at VGS=-4.5V) -5A
with gate voltages as low as 1.8V. This device is suitable
RDS(ON) (at VGS= -4.5V) 1.2. ao3415a-3.pdf Size:1694K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3415A (KO3415A)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● VDS (V) =-20V
● ID =-5 A (VGS =-4.5V)
1 2
● RDS(ON) ＜ 43mΩ (VGS =-4.5V)
+0.02
+0.1
0.15 -0.02
0.95 -0.1
+0.1
1.9 -0.2
● RDS(ON) ＜ 55mΩ (VGS =-2.5V)
● RDS(ON) ＜ 75mΩ (VGS =-1.8V)
● RDS(ON) ＜ 100mΩ (VGS =-1.5V)
1. Gate
2. Source

 1.3. ao3415a.pdf Size:1729K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3415A (KO3415A)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
■ Features
3
● VDS (V) =-20V
● ID =-5 A (VGS =-4.5V)
● RDS(ON) ＜ 43mΩ (VGS =-4.5V)
1 2
+0.1
0.95-0.1 0.1+0.05
● RDS(ON) ＜ 55mΩ (VGS =-2.5V) -0.01
+0.1
1.9-0.1
● RDS(ON) ＜ 75mΩ (VGS =-1.8V)
● RDS(ON) ＜ 100mΩ (VGS =-1.5V)
1. Gate
2. Source
D
3. Dra

1.4. ao3415as.pdf Size:1662K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3415AS (KO3415AS)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4-0.1
■ Features 3
● VDS (V) =-20V
● ID =-4A (VGS =-4.5V)
● RDS(ON) ＜ 45mΩ (VGS =-4.5V) 1 2
+0.02
+0.1
0.15 -0.02
0.95 -0.1
D
● RDS(ON) ＜ 54mΩ (VGS =-2.5V)
+0.1
1.9 -0.2
● RDS(ON) ＜ 75mΩ (VGS =-1.8V)
● ESD Rating: 3000V HBM
G
1. Gate
2. Source
3. Dra

Другие MOSFET… AO3404
, AO3404A
, AO3406
, AO3407A
, AO3409
, AO3413
, AO3414
, AO3415
, TPC8107
, AO3416
, AO3418
, AO3419
, AO3420
, AO3421
, AO3421E
, AO3422
, AO3423
.

AO3407A Datasheet (PDF)

1.1. ao3407a.pdf Size:484K _aosemi

AO3407A
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
The AO3407A uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
ID (at VGS=-10V) -4.3A
device is suitable for use as a load switch or in PWM
RDS(ON) (at VGS=-10V) 1.2. ao3407a.pdf Size:2287K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3407A (KO3407A)
SOT-23
Unit: mm
2.9+0.1
-0.1
+0.1
0.4-0.1
3
■ Features
● VDS (V) =-30V
● ID =-4.3 A (VGS =-10V)
1 2
+0.1
+0.05
0.95 -0.1
● RDS(ON) ＜ 48mΩ (VGS =-10V) 0.1 -0.01
+0.1
1.9 -0.1
● RDS(ON) ＜ 78mΩ (VGS =-4.5V)
1. Gate
2. Source
3. Drain
D
D
G
G
S
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Sy

 1.3. ao3407a-3.pdf Size:2288K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3407A (KO3407A)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● VDS (V) =-30V
● ID =-4.3 A (VGS =-10V)
1 2
● RDS(ON) ＜ 48mΩ (VGS =-10V)
+0.02
+0.1
0.15 -0.02
0.95-0.1
+0.1
1.9-0.2
● RDS(ON) ＜ 78mΩ (VGS =-4.5V)
1. Gate
2. Source
3. Drain
D
D
G
G
S
S
■ Absolute Maximum Ratings Ta = 25℃
Paramete

AO3407G MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AO3407G

Маркировка: A7G

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1.4
W

Предельно допустимое напряжение сток-исток (Uds): 30
V

Предельно допустимое напряжение затвор-исток (Ugs): 20
V

Максимально допустимый постоянный ток стока (Id): 4.1
A

Максимальная температура канала (Tj): 150
°C

Время нарастания (tr): 5
ns

Выходная емкость (Cd): 120
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.04
Ohm

Тип корпуса: SOT23

AO3407G
Datasheet (PDF)

1.1. ao3407g.pdf Size:276K _update

AO3407G P-CHANNEL MOSFET/P 沟道 MOS 晶体管
用途： 适用于作负载开关或脉宽调制应用。
Purpose:This device is suitable for use as a load switch or in PWM applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V -30 V
DS
I (T =25℃) -4.1 A
D a
I (T =70℃) -3.5 A
D a
I -20 A
DM
V ±20 V
GS
P (

4.1. ao3407.pdf Size:1986K _htsemi

AO3407
30V P-Channel Enhancement Mode MOSFET
V = -30V
DS
R , V
Ω
DS(ON) gs@-10V, I 4.1A 4.2. ao3407.pdf Size:447K _aosemi

AO3407
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
The AO3407 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is
ID (at VGS=10V) -4.1A
suitable for use as a load switch or in PWM applications.
RDS(ON) (at VGS=10V)

 4.3. ao3407a.pdf Size:484K _aosemi

AO3407A
30V P-Channel MOSFET
General Description Product Summary
VDS
-30V
The AO3407A uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
ID (at VGS=-10V) -4.3A
device is suitable for use as a load switch or in PWM
RDS(ON) (at VGS=-10V) 4.4. ao3407.pdf Size:1542K _kexin

SMD Type IC
SMD Type MOSFET
P-Channel Enhancement MOSFET
AO3407 (KO3407)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
Features
3
VDS (V) = -30V
ID = -4.1 A
1 2
RDS(ON) 52m (VGS = -10V)
D
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
RDS(ON) 87m (VGS = -4.5V) 1.9 -0.1
1.Base
1. Gate
2.Emitter
2. Source
G
3. Drain
3.collector
S
Absolute Maximum Ratings Ta = 25
Parameter Sy

 4.5. ao3407a.pdf Size:2287K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3407A (KO3407A)
SOT-23
Unit: mm
2.9+0.1
-0.1
+0.1
0.4-0.1
3
■ Features
● VDS (V) =-30V
● ID =-4.3 A (VGS =-10V)
1 2
+0.1
+0.05
0.95 -0.1
● RDS(ON) ＜ 48mΩ (VGS =-10V) 0.1 -0.01
+0.1
1.9 -0.1
● RDS(ON) ＜ 78mΩ (VGS =-4.5V)
1. Gate
2. Source
3. Drain
D
D
G
G
S
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Sy

4.6. ao3407-3.pdf Size:1572K _kexin

SMD Type IC
SMD Type MOSFET
P-Channel Enhancement MOSFET
AO3407 (KO3407)
SOT-23-3
Unit: mm
+0.2
2.9-0.1
+0.1
0.4 -0.1
3
Features
VDS (V) = -30V
ID = -4.1 A
1 2
+0.02
+0.1
0.15 -0.02
RDS(ON) 52m (VGS = -10V) 0.95 -0.1
D
1.9+0.1
-0.2
RDS(ON) 87m (VGS = -4.5V)
1. Gate
2. Source
G
3. Drain
S
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Drain-Sourc

4.7. ao3407a-3.pdf Size:2288K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3407A (KO3407A)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● VDS (V) =-30V
● ID =-4.3 A (VGS =-10V)
1 2
● RDS(ON) ＜ 48mΩ (VGS =-10V)
+0.02
+0.1
0.15 -0.02
0.95-0.1
+0.1
1.9-0.2
● RDS(ON) ＜ 78mΩ (VGS =-4.5V)
1. Gate
2. Source
3. Drain
D
D
G
G
S
S
■ Absolute Maximum Ratings Ta = 25℃
Paramete

4.8. ao3407hf.pdf Size:1559K _kexin

SMD Type IC
SMD Type MOSFET
P-Channel Enhancement MOSFET
AO3407 HF (KO3407 HF)
SOT-23-3
Unit: mm
+0.2
2.9-0.1
+0.1
0.4 -0.1
3
Features
VDS (V) = -30V
ID = -4.1 A
1 2
+0.02
+0.1
0.15 -0.02
RDS(ON) 52m (VGS = -10V) 0.95 -0.1
D
1.9+0.1
-0.2
RDS(ON) 87m (VGS = -4.5V)
1. Gate
2. Source
G
3. Drain
S
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Drain-

Другие MOSFET… SD2932
, STK1820F
, STP55NE06
, STP55NE06FP
, SUD50N024-06P
, SVF7N65T
, SVF7N65F
, AO3405
, J111
, AO3701
, AO4420A
, AO4433
, AO4456
, AO4458
, AO4474
, AO4607
, AO4614
.

Биполярный транзистор MJE340 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: MJE340

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 20
W

Макcимально допустимое напряжение коллектор-база (Ucb): 300
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 3
V

Макcимальный постоянный ток коллектора (Ic): 0.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 10
MHz

Статический коэффициент передачи тока (hfe): 30

Корпус транзистора: TO126

MJE340
Datasheet (PDF)

1.1. mje340g.pdf Size:67K _update

MJE340
Plastic Medium-Power
NPN Silicon Transistor
This device is useful for high-voltage general purpose applications.
Features
http://onsemi.com
• Suitable for Transformerless, Line-Operated Equipment
• Thermopad Construction Provides High Power Dissipation Rating
0.5 AMPERE
for High Reliability
• Pb-Free Package is Available*
POWER TRANSISTOR
NPN SILICON
300 VOLTS, 20 WATT

1.2. mje340re.pdf Size:117K _motorola

Order this document
MOTOROLA
by MJE340/D
SEMICONDUCTOR TECHNICAL DATA
MJE340
Plastic Medium Power NPN
0.5 AMPERE
Silicon Transistor
POWER TRANSISTOR
NPN SILICON
. . . useful for highvoltage general purpose applications.
300 VOLTS
Suitable for Transformerless, LineOperated Equipment
20 WATTS
Thermopad Construction Provides High Power Dissipation Rating for High
Reliability
III

 1.3. mje340-mje350.pdf Size:66K _st

MJE340
MJE350
COMPLEMETARY SILICON POWER TRANSISTORS
SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP — NPN DEVICES
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The MJE340 is a silicon epitaxial planar NPN
1
2
transistor intended for use in medium power
3
linear and switching applications.It is mounted in
SOT-32.
The complementary PNP type is MJE350. SOT-

1.4. mje340 mje350.pdf Size:501K _st

MJE340
MJE350

COMPLEMETARY SILICON POWER TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP — NPN DEVICES
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
1
2
The MJE340 is a Silicon Epitaxial Planar NPN
3
transistor intended for use in medium power
linear and switching applications. It is mounted in
SOT-32.
SOT-32
The complementary P

 1.5. mje340.pdf Size:37K _fairchild_semi

MJE340
High Voltage General Purpose Applications
• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE350
TO-126
1
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V
VEBO

1.6. mje340-d.pdf Size:67K _onsemi

MJE340
Plastic Medium-Power
NPN Silicon Transistor
This device is useful for high-voltage general purpose applications.
Features
http://onsemi.com
Suitable for Transformerless, Line-Operated Equipment
Thermopad Construction Provides High Power Dissipation Rating
0.5 AMPERE
for High Reliability
Pb-Free Package is Available*
POWER TRANSISTOR
NPN SILICON
300 VOLTS, 20 WATTS
MAXIMU

1.7. mje340.pdf Size:238K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340
TO126
Plastic Package
E
C
B
For use in High Voltage General Purpose Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector Emitter Voltage VCEO 300 V
Collector Base Voltage VCBO 300 V
VEBO
Emitter Base Voltage 3.0 V
IC
C

1.8. mje340t.pdf Size:208K _inchange_semiconductor

isc Silicon NPN Power Transistor MJE340T
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: V = 300 V(Min)
CEO(SUS)
·DC Current Gain-
: h = 100(Min) @ I = 50mA
FE C
·Low Collector Saturation Voltage-
: V = 1.0V(Max.)@ I = 50mA
CE(sat) C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage and general p

1.9. mje340.pdf Size:212K _inchange_semiconductor

isc Silicon NPN Power Transistor MJE340
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: V = 300 V(Min)
CEO(SUS)
·DC Current Gain-
: h = 100(Min) @ I = 50mA
FE C
·Low Collector Saturation Voltage-
: V = 1.0V(Max.)@ I = 50mA
CE(sat) C
·Complement to the PNP MJE350
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

AO3415A Datasheet (PDF)

1.1. ao3415a.pdf Size:319K _aosemi

AO3415A
20V P-Channel MOSFET
General Description Product Summary
VDS -20V
The AO3415A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
ID (at VGS=-4.5V) -5A
with gate voltages as low as 1.8V. This device is suitable
RDS(ON) (at VGS= -4.5V) 1.2. ao3415a-3.pdf Size:1694K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3415A (KO3415A)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● VDS (V) =-20V
● ID =-5 A (VGS =-4.5V)
1 2
● RDS(ON) ＜ 43mΩ (VGS =-4.5V)
+0.02
+0.1
0.15 -0.02
0.95 -0.1
+0.1
1.9 -0.2
● RDS(ON) ＜ 55mΩ (VGS =-2.5V)
● RDS(ON) ＜ 75mΩ (VGS =-1.8V)
● RDS(ON) ＜ 100mΩ (VGS =-1.5V)
1. Gate
2. Source

 1.3. ao3415a.pdf Size:1729K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3415A (KO3415A)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
■ Features
3
● VDS (V) =-20V
● ID =-5 A (VGS =-4.5V)
● RDS(ON) ＜ 43mΩ (VGS =-4.5V)
1 2
+0.1
0.95-0.1 0.1+0.05
● RDS(ON) ＜ 55mΩ (VGS =-2.5V) -0.01
+0.1
1.9-0.1
● RDS(ON) ＜ 75mΩ (VGS =-1.8V)
● RDS(ON) ＜ 100mΩ (VGS =-1.5V)
1. Gate
2. Source
D
3. Dra

1.4. ao3415as.pdf Size:1662K _kexin

SMD Type MOSFET
P-Channel MOSFET
AO3415AS (KO3415AS)
SOT-23-3
Unit: mm
+0.2
2.9 -0.1
+0.1
0.4-0.1
■ Features 3
● VDS (V) =-20V
● ID =-4A (VGS =-4.5V)
● RDS(ON) ＜ 45mΩ (VGS =-4.5V) 1 2
+0.02
+0.1
0.15 -0.02
0.95 -0.1
D
● RDS(ON) ＜ 54mΩ (VGS =-2.5V)
+0.1
1.9 -0.2
● RDS(ON) ＜ 75mΩ (VGS =-1.8V)
● ESD Rating: 3000V HBM
G
1. Gate
2. Source
3. Dra

KTC3875-GR Datasheet (PDF)

1.1. ktc3875-gr-y.pdf Size:785K _update

MCC
Micro Commercial Components
TM
KTC3875-Y
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
KTC3875-GR
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• High hFE and Low Noise
Epitaxial Planar
• Complementary to KTA1504
• Lead Free Finish/Rohs Compliant («P»Suffix designates
NPN Transistors
RoHS Compliant. See ordering information)
• Ha

3.1. ktc3875lt1.pdf Size:265K _update

 SEMICONDUCTOR KTC3875LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR
General purpose application Package:SOT-23
* Complement to KTA1504LT1
* Collector Current :Ic=150mA
* low noise:NF=10db(max)
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo 60 V
Collector-Emitter Voltage

3.2. ktc3875.pdf Size:590K _secos

KTC3875
0.15A , 60V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
High hFE A
L
Low noise
3
3
Complementary to KTA1504
Top View
C B
1
1 2
CLASSIFICATION OF hFE 2
K E
Product-Rank KTC3875-O KTC3875-Y KTC3875-GR KTC3875-BL
D
Range 70~140 120~240 200~400 350~700

 3.3. ktc3875s.pdf Size:94K _kec

SEMICONDUCTOR KTC3875S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L B L
FEATURES
DIM MILLIMETERS
Excellent hFE Linearity
_
+
2.93 0.20
A
B 1.30+0.20/-0.15
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
C 1.30 MAX
2
High hFE : hFE=70 700. 3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
Low Noise : NF=1dB(Typ.), 10dB(Max.).
1
G 1.90
H 0.95

3.4. ktc3875.pdf Size:781K _htsemi

 KTC3875
TRANSISTOR (NPN)
SOT-23
FEATURES
· High hFE
· Low noise
1. BASE
· Complementary to KTA1504 2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissip

 3.5. ktc3875.pdf Size:188K _lge

KTC3875
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
High hFE: hFE=70-700

Low noise : NF=1dB(Typ),10dB(Max)
Complementary to KTA1504
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltag

3.6. ktc3875.pdf Size:476K _wietron

KTC3875
COLLECTOR
Plastic-Encapsulate Transistors
3
NPN Silicon
1
BASE
2
SOT-23
EMITTER
(Ta=25 C)
MAXIMUM RATINGS
Rating Symbol Value
Unit
Collector-Emitter Voltage V
CEO 50 Vdc
Collector-Base Voltage VCBO
60 Vdc
Emitter-Base Voltage VEBO
5.0 Vdc
Collector Current -Continuous IC
mAdc
150
THERMAL CHARACTERISTICS
Characteristics Symbol Value
Unit
(1)
Total Device Dissipat

3.7. ktc3875lt1.pdf Size:265K _china

 SEMICONDUCTOR KTC3875LT1
Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR
General purpose application Package:SOT-23
* Complement to KTA1504LT1
* Collector Current :Ic=150mA
* low noise:NF=10db(max)
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic Symbol Rating Unit
Collector-Base Voltage Vcbo 60 V
Collector-Emitter Voltage

3.8. ktc3875.pdf Size:996K _kexin

SMD Type Transistors
NPN Transistors
KTC3875
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● High hFE
● Low noise
1 2
+0.1
+0.05
● Complementary to KTA1504 0.95 -0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 60
Collector — Emitter Voltage V

FTK3407 Datasheet (PDF)

1.1. ftk3407l.pdf Size:380K _first_silicon

SEMICONDUCTOR
FTK3407L
TECHNICAL DATA
P-Channel Enhancement Mode Field Effect Transistor
General Description
SOT-23-6L
The FTK3407L uses advanced trench technology to provide excellent
RDS(on) with low gate charge. This device is suitable for use as a load
switch or in PWM applications.
MARKING: R7
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit

1.2. ftk3407.pdf Size:229K _first_silicon

SEMICONDUCTOR
FTK3407
TECHNICAL DATA
D
DESCRIPTION
The FTK3407 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
G
with gate voltages as low as 4.5V. This device is suitable
for use as a load switch or in PWM applications.
S
Schematic diagram
GENERAL FEATURES
D
● VDS = -30V,ID = -4.1A
3
RDS(ON)

 4.1. ftk3404.pdf Size:305K _first_silicon

SEMICONDUCTOR
FTK3404
TECHNICAL DATA
N-Channel Enhancement Mode Field Effect Transistor
ID
V(BR)DSS RDS(on)MAX
3
30mΩ@ 10V
30V
5.8A 2
1
42mΩ@4.5V
SOT–23
1. GATE
DESCRIPTION
2. SOURCE
3. DRAIN
The FTK3404 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. This device is suit able for use as a load
switch or in PWM applications.The s

4.2. ftk3400.pdf Size:232K _first_silicon

SEMICONDUCTOR
FTK3400
TECHNICAL DATA
N-Channel Enhancement Mode Field Effect Transistor
D
FEATURE
G
High dense cell design
for extremely low R S
DS(ON)
Schematic diagram
Exceptional on-resistance and
maximum DC current capability
D
3
R0
G 1 2 S
Marking and pin Assignment
SOT-23 top view
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit

 4.3. ftk3401.pdf Size:236K _first_silicon

SEMICONDUCTOR
FTK3401
TECHNICAL DATA
D
DESCRIPTION
The FTK3401 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
G
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
S
Schematic diagram
GENERAL FEATURES
D
● VDS = -30V,ID = -4.2A
3
RDS(ON)

KO3407 Datasheet (PDF)

1.1. ko3407.pdf Size:52K _update_mosfet

SMD Type IC
SMD Type Transistors
P-Channel Enhancement Mode Field Effect Transistor
KO3407
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
3
VDS (V) = -30V
ID =-4.1 A
12
RDS(ON) 52m (VGS = -10V)
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
RDS(ON) 87m (VGS = -4.5V) 1.9-0.1
1.Base
1. Gate
2.Emitter
2. Source
3. Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symb

5.1. ko3404.pdf Size:55K _update_mosfet

SMD Type IC
SMD Type Transistors
N-Channel Enhancement Mode Field Effect Transistor
KO3404
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
3
VDS (V) = 30V
ID =5.8 A (VGS=10V)
RDS(ON) 28 m (VGS =10V)
12
+0.1
+0.05
0.95-0.1 0.1-0.01
RDS(ON) 43 m (VGS =4.5V)
+0.1
1.9-0.1
1.Base
1. Gate
2.Emitter
2. Source
3. Drain
3.collector
Absolute Maximum Ratings Ta = 25
Paramet

5.2. ko3402.pdf Size:54K _update_mosfet

SMD Type IC
SMD Type MOSFET
N-Channel Enhancement Mode
Field Effect Transistor
KO3402(AO3402)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
3
Features
VDS (V) = 30V
ID =4A
12
+0.1
+0.05
RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01
+0.1
1.9-0.1
RDS(ON) 70m (VGS =4.5V)
RDS(ON) 110m (VGS =2.5V)
1.Base
1. Gate
2.Emitter
2. Source
3. Drain
3.collector
Absolute Maximum Ratings T

 5.3. ko3403.pdf Size:56K _update_mosfet

SMD Type IC
SMD Type Transistors
P-Channel Enhancement Mode Field Effect Transistor
KO3403
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
3
Features
VDS (V) =-30V
ID =-2.6 A (VGS=-10V)
12
RDS(ON) 130 m (VGS =-10V)
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
RDS(ON) 180 m (VGS =-4.5V)
RDS(ON) 260m (VGS =-2.5V)
1.Base
1. Gate
2.Emitter
2. Source
3. Drain
3.collector
Absolute

5.4. ko3409.pdf Size:54K _update_mosfet

SMD Type MOSFET
P-Channel Enhancement Mode
Field Effect Transistor
KO3409(AO3409)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
3
VDS (V) = -30V
ID =-2.6A(VGS = -10V)
12
RDS(ON)

 5.5. ko3400-89.pdf Size:1163K _kexin

SMD Type IC
SMD Type MOSFET
N-Channel MOSFET
KO3400
SOT-89
Unit:mm
Features
1.70 0.1
VDS (V) = 30V
ID = 5.8 A (VGS = 10V)
RDS(ON) 28m (VGS = 10V)
RDS(ON) 33m (VGS = 4.5V)
RDS(ON) 52m (VGS = 2.5V)
0.42 0.1
0.46 0.1
1.Gate
2.Drain
3.Source
D
G
S
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 12 V
Continu

5.6. ko3401.pdf Size:1515K _kexin

SMD Type MOSFET
P-Channel Enhancement MOSFET
KO3401
SOT-89
Unit:mm
■ Features
1.70 0.1
● VDS (V) =-30V
● ID =-4.2 A (VGS =-10V)
● RDS(ON) ＜ 65mΩ (VGS =-10V)
● RDS(ON) ＜ 70mΩ (VGS =-4.5V)
D
0.42 0.1
● RDS(ON) ＜ 120mΩ (VGS =-2.5V) 0.46 0.1
1.Gate
G
2.Drain
S
3.Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source

2SC3405 Datasheet (PDF)

1.1. 2sc3405.pdf Size:209K _toshiba

2SC3405
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3405
Industrial Applications
Switching Regulator and High Voltage Switching
Unit: mm
Applications
High Speed DC-DC Converter Applications
• Excellent switching times: tr = 1.0 µs (max)
t = 1.0 µs (max), (I = 0.3 A)
f C
• High collector breakdown voltage: V = 800 V
CEO
Maximum Ratings (Ta = 25°C)
Cha

4.1. 2sc3400.pdf Size:87K _sanyo

4.2. 2sc3402.pdf Size:88K _sanyo

 4.3. 2sc3401.pdf Size:87K _sanyo

4.4. 2sc3404.pdf Size:150K _mitsubishi

 4.5. 2sc3403.pdf Size:75K _no

4.6. 2sc3409.pdf Size:145K _jmnic

JMnic Product Specification
Silicon NPN Power Transistors 2SC3409
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter
Absolute maxi

4.7. 2sc3409.pdf Size:186K _inchange_semiconductor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor 2SC3409
DESCRIPTION
·Low Collector Saturation Voltage
·100% avalanche tested
·Good Linearity of h
FE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMB